ESD5V3S5USE6727 [INFINEON]

Multi-Channel TVS Diode Array; 多通道瞬态抑制二极管阵列
ESD5V3S5USE6727
型号: ESD5V3S5USE6727
厂家: Infineon    Infineon
描述:

Multi-Channel TVS Diode Array
多通道瞬态抑制二极管阵列

瞬态抑制二极管 电视
文件: 总7页 (文件大小:152K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ESD5V0SxUS  
Multi-Channel TVS Diode Array  
ESD / transient protection of  
data and power lines  
in 3.3 V / 5 V application according to:  
IEC61000-4-2 (ESD): ± 30 KV (contact)  
IEC61000-4-4 (EFT): 80 A (5/50 ns)  
IEC61000-4-5 (Surge): 10 A (8/20 µs)  
Working voltage: 5 V (5.3 V max.)  
Low clamping voltage  
Low reverse current < 5 µA  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
Applications  
Uni or bi-directional operation possible  
(see application example page 5)  
Mobile communication  
Consumer products (STB, MP3, DVD, DSC...)  
LCD displays, camera  
Notebooks and desktop computers, peripherals  
ESD5V0S4US  
ESD5V0S5US  
ESD5V0S5US E6727  
180° rotated in reel  
2
1 3  
6
5
4
6
5
4
4
5
6
1
2
3
1
2
3
Type  
ESD5V0S4US  
ESD5V0S5US  
ESD5V3S5US E6727*  
Package  
SOT363  
SOT363  
SOT363  
Configuration  
Marking  
E4s  
E5s  
4 lines, uni-directional  
5 lines, uni-directional  
5 lines, uni-directional  
on request  
* Preliminary data  
2007-12-11  
1
ESD5V0SxUS  
Maximum Ratings at T = 25°C, unless otherwise specified  
A
Parameter  
ESD contact discharge per diode  
Peak pulse current (t = 8 / 20 µs) per diode  
Symbol  
Value  
30  
10  
Unit  
kV  
A
1)  
V
ESD  
2)  
I
p
pp  
130  
W
°C  
Peak pulse power (t = 8 / 20 µs) per diode  
Operating temperature range  
Storage temperature  
P
T
T
p
pk  
-55...125  
-65...150  
op  
stg  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
typ. max.  
Unit  
V
min.  
Characteristics  
Reverse working voltage  
Breakdown voltage  
-
5
6.7  
5.3  
7.7  
V
V
RWM  
(BR)  
5.7  
I
= 1 mA  
(BR)  
µA  
V
Reverse current  
V = 3.3 V  
I
R
-
-
-
-
1
5
R
V = 5 V  
R
Clamping voltage (positive transients)  
V
V
CL  
FC  
2)  
I
= 1 A, t = 8/20 µs  
-
-
7
10.5  
9
13  
PP  
p
2)  
I
= 10 A, t = 8/20 µs  
PP  
p
Forward clamping voltage (negative transients)  
2)  
I
= 1 A, t = 8/20 µs  
-
-
1
3.5  
3
6
PP  
p
2)  
I
= 10 A, t = 8/20 µs  
PP  
p
pF  
Diode capacitance  
V = 0 V, f = 1 MHz  
C
T
-
-
70  
35  
90  
55  
R
V = 5 V, f = 1 MHz  
R
1V  
according to IEC61000-4-2  
ESD  
2I according to IEC61000-4-5  
pp  
2007-12-11  
2
ESD5V0SxUS  
Power derating curve P = ƒ (T )  
Clamping voltage, V = ƒ(I )  
cl pp  
pk  
A
t = 8 / 20 µs (positive transients)  
p
13  
V
110  
%
11  
10  
9
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
8
7
6
5
4
3
2
1
0
°C  
A
0
25  
50  
75  
100  
150  
0
1
2
3
4
5
6
7
8
10  
T
I
A
pp  
Forward clamping voltage V = ƒ (I )  
Reverse current I = ƒ(V )  
R R  
FC  
pp  
t = 8 / 20 µs (negative transients)  
T = Parameter  
p
A
10 -6  
A
13  
V
11  
10  
9
10 -7  
TA = 125°C  
85°C  
10 -8  
10 -9  
8
25°C  
7
6
5
4
3
10 -10  
2
1
10 -11  
0
A
V
0
1
2
3
4
5
6
7
8
10  
0
1
2
3
5
I
V
R
pp  
2007-12-11  
3
ESD5V0SxUS  
Normalized reverse voltage  
V (T )/V (25°C)= ƒ(T )  
Diode capacitance C = ƒ (V )  
T R  
f = 1MHz  
BR  
A
BR  
A
I = 1 mA  
R
90  
pF  
1.06  
1.04  
1.03  
1.02  
1.01  
1
70  
60  
50  
40  
30  
0.99  
0.98  
0.97  
0.96  
0.95  
20  
0
V
-50 -25  
0
25  
50  
75  
100  
150  
1
2
3
5
°C  
T
V
R
A
2007-12-11  
4
ESD5V0SxUS  
Application example ESD5V0S5US  
5 channels, uni-directional  
5 protected signal lines, level 0 ... +5.3V  
I/O  
I/O  
I/O  
I/O  
I/O  
ESD sensitive  
device  
3
4
2
5
1
6
The protection diode should be placed  
very close to the location where the  
ESD or other transients can occur to  
keep loops and inductances as small  
as possible.  
Pin 5 should be connected directly to a  
ground plane on the board.  
Application example ESD5V0S5US  
4 channels, bi-directional  
4 protected signal lines, level -5.3V ... +5.3V  
I/O  
I/O  
I/O  
I/O  
ESD sensitive  
device  
6
1
5
2
4
3
For bi-directional protection pin 2  
(or any other pin except pin 5)  
should be connected directly to a  
ground plane on the board.  
Pin 5 is not connected. Total  
clamping voltage is the sum of  
VCL + VFC (see table on page 2).  
Application example ESD5V0S4US  
4 channels, uni-directional  
4 protected signal lines, level 0 … +5.3V  
I/O  
I/O  
I/O  
I/O  
ESD sensitive  
device  
3
2
1
6
Pin 2 and pin 5 should be  
connected directly to a ground  
plane on the board.  
4
5
2007-12-11  
5
Package SOT363  
ESD5V0SxUS  
Package Outline  
±0.2  
2
±0.1  
0.9  
+0.1  
-0.05  
6x  
0.2  
0.1 MAX.  
0.1  
M
0.1  
A
6
1
5
4
3
2
Pin 1  
marking  
+0.1  
0.15  
-0.05  
0.65 0.65  
M
0.2  
A
Foot Print  
0.3  
0.65  
0.65  
Marking Layout (Example)  
Small variations in positioning of  
Date code, Type code and Manufacture are possible.  
Manufacturer  
2005, June  
Date code (Year/Month)  
Pin 1 marking  
Laser marking  
BCR108S  
Type code  
Standard Packing  
Reel ø180 mm = 3.000 Pieces/Reel  
Reel ø330 mm = 10.000 Pieces/Reel  
For symmetric types no defined Pin 1 orientation in reel.  
4
0.2  
1.1  
2.15  
Pin 1  
marking  
2007-12-11  
6
ESD5V0SxUS  
Edition 2006-02-01  
Published by  
Infineon Technologies AG  
81726 München, Germany  
© Infineon Technologies AG 2007.  
All Rights Reserved.  
Attention please!  
The information given in this dokument shall in no event be regarded as a guarantee  
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any  
examples or hints given herein, any typical values stated herein and/or any information  
regarding the application of the device, Infineon Technologies hereby disclaims any  
and all warranties and liabilities of any kind, including without limitation warranties of  
non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices  
please contact your nearest Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements components may contain dangerous substances.  
For information on the types in question please contact your nearest  
Infineon Technologies Office.  
Infineon Technologies Components may only be used in life-support devices or  
systems with the express written approval of Infineon Technologies, if a failure of  
such components can reasonably be expected to cause the failure of that  
life-support device or system, or to affect the safety or effectiveness of that  
device or system.  
Life support devices or systems are intended to be implanted in the human body,  
or to support and/or maintain and sustain and/or protect human life. If they fail,  
it is reasonable to assume that the health of the user or other persons  
may be endangered.  
2007-12-11  
7

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