ESD5V3U1U [INFINEON]
Ultra-Low Capacitance TVS Diode; 超低电容TVS二极管
| 型号： | ESD5V3U1U |
| 厂家： | 
Infineon |
| 描述： | Ultra-Low Capacitance TVS Diode |
| 文件： | 总8页 (文件大小：613K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ESD5V3U1U...
Ultra-Low Capacitance TVS Diode
• ESD / transient protection of high-speed
data lines exceeding
IEC61000-4-2 (ESD): 20 kV (air / contact)
IEC61000-4-4 (EFT): 2.5 kV / 50 A (5/50 ns)
IEC61000-4-5 (surge): 3 A (8/20 µs)
• Extremely small form factor down to
0.62 x 0.32 x 0.31 mm³
• Reverse working voltage: 5.3 V max.
• Very low reverse current: < 10 nA typ.
• Extremely low capacitance: 0.4 pF typ.
• Very low clamping voltage: 12 V typ. at positive
transients, 4 V typ. at negative transients
• Very low series inductance down to 0.2 nH typ.
• Pb-free (RoHS compliant) package
Applications
• USB 2.0, 10/100/1000 Ethernet, Firewire, DVI,
HDMI, S-ATA
• Mobile communication
• Consumer products (STB, MP3, DVD, DSC...)
• LCD displays, camera
• Notebooks and desktop computers, peripherals
ESD5V3U1U-02LS
ESD5V3U1U-02LRH
2
1
Type
ESD5V3U1U-02LRH
ESD5V3U1U-02LS
Package
TSLP-2-7
TSSLP-2-1
Configuration
1 line, uni-directional
1 line, uni-directional
Marking
E5
L
2010-03-12
1
ESD5V3U1U...
Maximum Ratings at T = 25°C, unless otherwise specified
Parameter
ESD (air / contact) discharge
Peak pulse current (t = 8 / 20 µs)
Symbol
V
ESD
I
pp
Value
20
Unit
kV
A
1)
2)
3
p
°C
Operating temperature range
Storage temperature
T
T
-55...125
-65...150
op
stg
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
Characteristics
-
6
-
-
5.3
-
V
Reverse working voltage
Breakdown voltage
V
V
RWM
(BR)
I
= 1 mA, from pin 1 to 2
(BR)
-
< 10
100 nA
Reverse current
I
R
V = 5.3 V, from pin 1 to 2
R
V
13
15
Clamping voltage
V
V
CL
FC
2)
I
= 1 A, t = 8/20 µs , from pin 1 to 2
-
-
10
12
PP
p
2)
I
= 3 A, t = 8/20 µs , from pin 1 to 2
PP
p
Forward clamping voltage
2)
I
= 1 A, t = 8/20 µs , from pin 2 to 1
-
-
-
2
4
4
6
PP
p
2)
I
= 3 A, t = 8/20 µs , from pin 2 to 1
PP
p
3)
0.4
0.6 pF
Line capacitance
C
T
V = 0 V, f = 1 MHz
R
Series inductance
ESD5V3U1U-02LS
ESD5V3U1U-02LRH
L
nH
S
-
-
0.2
0.4
-
-
1V
according to IEC61000-4-2
ESD
2I according to IEC61000-4-5
pp
3Total capacitance line to ground
2010-03-12
2
ESD5V3U1U...
Clamping voltage, V = ƒ(I )
Forward clamping voltage V = ƒ(I )
FC PP
cl
pp
t = 8 / 20 µs, from pin 1 to 2
t = 8 / 20 µs, from pin 2 to 1
p
p
13
V
6
V
11
10
9
4
3
2
1
0
8
7
6
A
A
0
1
2
4
0
1
2
3
5
I
I
pp
pp
Reverse current I = ƒ (T )
Line capacitance C = ƒ (V )
R
A
T
R
V = 5.3 V, from pin 1 to 2
f = 1 MHz, from pin 1 to 2
R
10 -6
A
0.6
pF
10 -7
10 -8
0.4
0.3
0.2
0.1
0
10 -9
10 -10
10 -11
25
°C
V
50
75
100
150
0
1
2
3
5
T
V
R
A
2010-03-12
3
ESD5V3U1U...
Line capacitance C = ƒ (f)
Line capacitance C = ƒ(T )
T A
T
V = parameter, from pin 1 to 2
V = 0 V, f = 1 MHz
R
R
0.7
pF
0.6
pF
0.5
VR=0V
0.4
0.3
0.2
0.1
0
5.3 V
0.4
0.3
0.2
0.1
0
VR=5.3V
0 V
MHz
°C
0
500
1000
1500
2000
3000
-50
-25
0
25
50
100
T
f
A
2010-03-12
4
ESD5V3U1U...
Application example ESD5V3U1U...
1-channel, uni-directional
Protected line, signal level up to +VRWM
(uni-directional)
ESD sensitive
device
I/O
1
The protection diode should be placed
very close to the location where the
ESD or other transients can occur to
keep loops and inductances as small
as possible.
Pin 2 should be connected directly to a
ground plane on the board.
2
2010-03-12
5
TSLP-2-7 (mm)
ESD5V3U1U...
Package Outline
Top view
Bottom view
+±0±1
±0ꢁ9
-±0±ꢁ
±±0±ꢀ
±06
±0±ꢀ MAX0
2
2
1
1
1)
±±0±ꢁꢀ
±0ꢀ
Cathode
marking
1) Dimension applies to plated terminal
Foot Print
For board assembly information please refer to Infineon website "Packages"
±06
±04ꢀ
Copper
Solder mask
Stencil apertures
Marking Layout (Example)
BAR9±-±2LRH
Type code
Cathode marking
Laser marking
Standard Packing
Reel ø18± mm = 1ꢀ0±±± Pieces/Reel
Reel øꢁꢁ± mm = ꢀ±0±±± Pieces/Reel (optional)
±0ꢀ
4
±076
Cathode
marking
2010-03-12
6
TSSLP-2-1 (mm)
ESD5V3U1U...
2010-03-12
7
ESD5V3U1U...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2010-03-12
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