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F3L400R07W3S5_B59 [INFINEON]

PressFIT;
F3L400R07W3S5_B59
型号： F3L400R07W3S5_B59
厂家： Infineon    Infineon
描述：

PressFIT
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中文：  中文翻译
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F3L400R07W3S5_B59  
™
EasyPACK module  
™
™
EasyPACK module with TRENCHSTOP 5 and Emitter Controlled 3 diode and PressFIT / NTC  
Features  
• Electrical features  
- VCES = 650 V  
- IC nom = 200 A / ICRM = 400 A  
- Low switching losses  
• Mechanical features  
- Al2O3 substrate with low thermal resistance  
- Compact design  
- PressFIT contact technology  
- Integrated NTC temperature sensor  
- High power density  
Potential applications  
• Solar applications  
• 3-level-applications  
Product validation  
• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068  
Description  
Datasheet  
www.infineon.com  
Please read the Important Notice and Warnings at the end of this document  
1.00  
2021-06-25  
F3L400R07W3S5_B59  
™
EasyPACK module  
Table of contents  
Table of contents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1  
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
IGBT, T1.1 / T1.2 / T4.1 / T4.2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
IGBT, T2 / T3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Diode, D1 / D4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6  
Diode, D2 / D3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7  
Diode, D5 / D6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8  
NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9  
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19  
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20  
Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22  
1
2
3
4
5
6
7
8
9
10  
11  
Datasheet  
2
1.00  
2021-06-25  
F3L400R07W3S5_B59  
™
EasyPACK module  
1 Package  
1
Package  
Table 1  
Insulation coordination  
Symbol Note or test condition  
Parameter  
Values  
3.2  
Unit  
Isolation test voltage  
Internal Isolation  
Creepage distance  
Creepage distance  
Clearance  
VISOL  
RMS, f = 50 Hz, t = 1 min  
kV  
basic insulation (class 1, IEC 61140)  
Al2O3  
11.2  
6.8  
dCreep terminal to heatsink  
mm  
mm  
mm  
mm  
dCreep terminal to terminal  
dClear terminal to heatsink  
dClear terminal to terminal  
CTI  
9.4  
Clearance  
5.5  
Comparative tracking index  
RTI Elec.  
> 400  
140  
RTI  
housing  
°C  
Table 2  
Characteristic values  
Symbol Note or test condition  
Parameter  
Values  
Min. Typ. Max.  
12  
Unit  
Stray inductance module  
Storage temperature  
LsCE  
nH  
°C  
Tstg  
M
-40  
1.3  
125  
1.5  
Mounting torque for modul  
mounting  
- Mounting according to M5, Screw  
valid application note  
Nm  
Weight  
G
78  
g
Note:  
The current under continuous operation is limited to 25A rms per connector pin.  
2
IGBT, T1.1 / T1.2 / T4.1 / T4.2  
Table 3  
Maximum rated values  
Parameter  
Symbol Note or test condition  
Values  
650  
Unit  
Collector-emitter voltage  
VCES  
ICN  
Tvj = 25 °C  
TH = 65 °C  
V
A
Implemented collector  
current  
200  
Continous DC collector  
current  
ICDC  
ICRM  
VGES  
Tvj max = 175 °C  
tP = 1 ms  
130  
400  
20  
A
A
V
Repetitive peak collector  
current  
Gate-emitter peak voltage  
Datasheet  
3
1.00  
2021-06-25  
F3L400R07W3S5_B59  
™
EasyPACK module  
2 IGBT, T1.1 / T1.2 / T4.1 / T4.2  
Table 4  
Characteristic values  
Parameter  
Symbol Note or test condition  
Values  
Unit  
Min. Typ. Max.  
Collector-emitter saturation  
voltage  
VCE sat IC = 100 A, VGE = 15 V  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
1.17  
1.20  
1.21  
4
1.50  
V
Gate threshold voltage  
Gate charge  
VGEth  
QG  
IC = 2 mA, VCE = VGE, Tvj = 25 °C  
3.25  
4.75  
V
VGE = 15 V, VCE = 400 V  
0.84  
0
µC  
Ω
Internal gate resistor  
Input capacitance  
RGint  
Cies  
Cres  
ICES  
Tvj = 25 °C  
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V  
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V  
14.3  
0.05  
nF  
nF  
Reverse transfer capacitance  
Collector-emitter cut-off  
current  
VCE = 650 V, VGE = 0 V  
Tvj = 25 °C  
0.019 mA  
Gate-emitter leakage current  
IGES  
tdon  
VCE = 0 V, VGE = 20 V, Tvj = 25 °C  
100  
nA  
µs  
Turn-on delay time  
(inductive load)  
IC = 100 A, VCE = 300 V,  
VGE = 15 V, RGon = 4.7 Ω  
Tvj = 25 °C  
0.022  
0.021  
0.021  
0.013  
0.015  
0.015  
0.117  
0.145  
0.158  
0.044  
0.046  
0.047  
1
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Rise time (inductive load)  
tr  
tdoff  
tf  
IC = 100 A, VCE = 300 V,  
VGE = 15 V, RGon = 4.7 Ω  
µs  
µs  
Turn-off delay time  
(inductive load)  
IC = 100 A, VCE = 300 V,  
VGE = 15 V, RGoff = 4.7 Ω  
Fall time (inductive load)  
IC = 100 A, VCE = 300 V,  
VGE = 15 V, RGoff = 4.7 Ω  
µs  
Turn-on energy loss per  
pulse  
Eon  
IC = 100 A, VCE = 300 V,  
Lσ = 35 nH, VGE = 15 V,  
RGon = 4.7 Ω, di/dt = 12.5  
kA/µs (Tvj = 150 °C)  
mJ  
mJ  
1.4  
1.49  
Turn-off energy loss per  
pulse  
Eoff  
IC = 100 A, VCE = 300 V,  
Lσ = 35 nH, VGE = 15 V,  
RGoff = 4.7 Ω, dv/dt =  
4400 V/µs (Tvj = 150 °C)  
0.78  
1.28  
1.4  
Thermal resistance, junction  
to heatsink  
RthJH  
Tvj op  
per IGBT, λgrease= 3.3 W/(m*K)  
0.478  
K/W  
°C  
Temperature under  
switching conditions  
-40  
150  
Datasheet  
4
1.00  
2021-06-25  
F3L400R07W3S5_B59  
™
EasyPACK module  
3 IGBT, T2 / T3  
3
IGBT, T2 / T3  
Table 5  
Maximum rated values  
Symbol Note or test condition  
VCES  
Parameter  
Values  
650  
Unit  
Collector-emitter voltage  
Tvj = 25 °C  
TH = 65 °C  
V
A
Implemented collector  
current  
ICN  
300  
Continous DC collector  
current  
ICDC  
ICRM  
VGES  
Tvj max = 175 °C  
tP = 1 ms  
255  
600  
20  
A
A
V
Repetitive peak collector  
current  
Gate-emitter peak voltage  
Table 6  
Characteristic values  
Parameter  
Symbol Note or test condition  
Values  
Unit  
Min. Typ. Max.  
Collector-emitter saturation  
voltage  
VCE sat IC = 100 A, VGE = 15 V  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
0.88  
0.80  
0.77  
5
1.13  
V
Gate threshold voltage  
Gate charge  
VGEth  
QG  
IC = 4 mA, VCE = 20 V, Tvj = 25 °C  
4.25  
5.75  
V
VGE = 15 V, VCE = 400 V  
3.7  
µC  
Ω
Internal gate resistor  
Input capacitance  
RGint  
Cies  
Cres  
ICES  
Tvj = 25 °C  
0
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V  
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V  
47.1  
0.168  
nF  
nF  
Reverse transfer capacitance  
Collector-emitter cut-off  
current  
VCE = 650 V, VGE = 0 V  
Tvj = 25 °C  
0.019 mA  
Gate-emitter leakage current  
IGES  
tdon  
VCE = 0 V, VGE = 20 V, Tvj = 25 °C  
100  
nA  
µs  
Turn-on delay time  
(inductive load)  
IC = 100 A, VCE = 300 V,  
VGE = 15 V, RGon = 6.8 Ω  
Tvj = 25 °C  
0.128  
0.108  
0.103  
0.025  
0.030  
0.031  
0.693  
0.821  
0.853  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Rise time (inductive load)  
tr  
IC = 100 A, VCE = 300 V,  
VGE = 15 V, RGon = 6.8 Ω  
µs  
µs  
Turn-off delay time  
(inductive load)  
tdoff  
IC = 100 A, VCE = 300 V,  
VGE = 15 V, RGoff = 6.8 Ω  
Datasheet  
5
1.00  
2021-06-25  
F3L400R07W3S5_B59  
™
EasyPACK module  
4 Diode, D1 / D4  
Table 6  
Characteristic values (continued)  
Symbol Note or test condition  
Parameter  
Values  
Unit  
Min. Typ. Max.  
Fall time (inductive load)  
tf  
IC = 100 A, VCE = 300 V,  
VGE = 15 V, RGoff = 6.8 Ω  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
0.129  
0.213  
0.234  
1.06  
µs  
Turn-on energy loss per  
pulse  
Eon  
IC = 100 A, VCE = 300 V,  
Lσ = 35 nH, VGE = 15 V,  
RGon = 6.8 Ω, di/dt =  
mJ  
mJ  
1.44  
1.54  
2700 A/µs (Tvj = 150 °C)  
Turn-off energy loss per  
pulse  
Eoff  
IC = 100 A, VCE = 300 V,  
Lσ = 35 nH, VGE = 15 V,  
RGoff = 6.8 Ω, dv/dt = 760  
V/µs (Tvj = 150 °C)  
5.24  
8.18  
8.84  
Thermal resistance, junction  
to heatsink  
RthJH  
Tvj op  
per IGBT, λgrease= 3.3 W/(m*K)  
0.300  
K/W  
°C  
Temperature under  
switching conditions  
-40  
150  
4
Diode, D1 / D4  
Table 7  
Maximum rated values  
Symbol Note or test condition  
VRRM  
Parameter  
Values  
Unit  
Repetitive peak reverse  
voltage  
Tvj = 25 °C  
650  
V
Implemented forward  
current  
IFN  
IF  
IFRM  
I2t  
225  
100  
450  
A
A
Continous DC forward  
current  
Repetitive peak forward  
current  
I2t - value  
tP = 1 ms  
A
VR = 0 V, tP = 10 ms  
Tvj = 125 °C  
Tvj = 150 °C  
3030  
2760  
A²s  
Table 8  
Characteristic values  
Symbol Note or test condition  
Parameter  
Values  
Unit  
Min. Typ. Max.  
Forward voltage  
VF  
IF = 100 A, VGE = 0 V  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
1.26  
1.16  
1.11  
1.55  
V
Datasheet  
6
1.00  
2021-06-25  
F3L400R07W3S5_B59  
™
EasyPACK module  
5 Diode, D2 / D3  
Table 8  
Characteristic values (continued)  
Symbol Note or test condition  
Parameter  
Values  
Unit  
Min. Typ. Max.  
Peak reverse recovery  
current  
IRM  
IF = 100 A, VR = 300 V,  
VGE = -15 V, -diF/dt =  
2700 A/µs (Tvj = 150 °C)  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
105  
141  
A
151  
Recovered charge  
Qr  
IF = 100 A, VR = 300 V,  
VGE = -15 V, -diF/dt =  
2700 A/µs (Tvj = 150 °C)  
5.94  
11.6  
13.5  
1.3  
µC  
Reverse recovery energy  
Erec  
IF = 100 A, VR = 300 V,  
VGE = -15 V, -diF/dt =  
2700 A/µs (Tvj = 150 °C)  
mJ  
2.58  
3.01  
0.431  
Thermal resistance, junction  
to heatsink  
RthJH  
Tvj op  
per diode, λgrease= 3.3 W/(m*K)  
K/W  
°C  
Temperature under  
switching conditions  
-40  
150  
5
Diode, D2 / D3  
Table 9  
Maximum rated values  
Symbol Note or test condition  
VRRM  
Parameter  
Values  
Unit  
Repetitive peak reverse  
voltage  
Tvj = 25 °C  
650  
V
Implemented forward  
current  
IFN  
IF  
IFRM  
I2t  
225  
100  
450  
A
A
Continous DC forward  
current  
Repetitive peak forward  
current  
I2t - value  
tP = 1 ms  
A
VR = 0 V, tP = 10 ms  
Tvj = 125 °C  
Tvj = 150 °C  
3030  
2760  
A²s  
Table 10  
Characteristic values  
Symbol Note or test condition  
Parameter  
Values  
Unit  
Min. Typ. Max.  
Forward voltage  
VF  
IF = 100 A, VGE = 0 V  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
1.26  
1.16  
1.11  
1.55  
V
Datasheet  
7
1.00  
2021-06-25  
F3L400R07W3S5_B59  
™
EasyPACK module  
6 Diode, D5 / D6  
Table 10  
Characteristic values (continued)  
Symbol Note or test condition  
Parameter  
Values  
Unit  
Min. Typ. Max.  
Peak reverse recovery  
current  
IRM  
IF = 100 A, VR = 300 V,  
VGE = -15 V, -diF/dt =  
2700 A/µs (Tvj = 150 °C)  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
105  
141  
A
151  
Recovered charge  
Qr  
IF = 100 A, VR = 300 V,  
VGE = -15 V, -diF/dt =  
2700 A/µs (Tvj = 150 °C)  
5.94  
11.6  
13.5  
1.3  
µC  
Reverse recovery energy  
Erec  
IF = 100 A, VR = 300 V,  
VGE = -15 V, -diF/dt =  
2700 A/µs (Tvj = 150 °C)  
mJ  
2.58  
3.01  
0.390  
Thermal resistance, junction  
to heatsink  
RthJH  
Tvj op  
per diode, λgrease= 3.3 W/(m*K)  
K/W  
°C  
Temperature under  
switching conditions  
-40  
150  
6
Diode, D5 / D6  
Table 11  
Maximum rated values  
Symbol Note or test condition  
VRRM  
Parameter  
Values  
Unit  
Repetitive peak reverse  
voltage  
Tvj = 25 °C  
650  
V
Implemented forward  
current  
IFN  
IF  
IFRM  
I2t  
300  
100  
600  
A
A
Continous DC forward  
current  
Repetitive peak forward  
current  
I2t - value  
tP = 1 ms  
A
VR = 0 V, tP = 10 ms  
Tvj = 125 °C  
Tvj = 150 °C  
6610  
6050  
A²s  
Table 12  
Characteristic values  
Symbol Note or test condition  
Parameter  
Values  
Unit  
Min. Typ. Max.  
Forward voltage  
VF  
IF = 100 A, VGE = 0 V  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
1.19  
1.07  
1.02  
1.47  
V
Datasheet  
8
1.00  
2021-06-25  
F3L400R07W3S5_B59  
™
EasyPACK module  
7 NTC-Thermistor  
Table 12  
Characteristic values (continued)  
Symbol Note or test condition  
Parameter  
Values  
Unit  
Min. Typ. Max.  
Peak reverse recovery  
current  
IRM  
IF = 100 A, VR = 300 V,  
VGE = -15 V, -diF/dt = 12.5  
kA/µs (Tvj = 150 °C)  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
135  
186  
A
199  
Recovered charge  
Qr  
IF = 100 A, VR = 300 V,  
VGE = -15 V, -diF/dt = 12.5  
kA/µs (Tvj = 150 °C)  
5.05  
12  
µC  
14.4  
0.931  
2.64  
3.26  
0.479  
Reverse recovery energy  
Erec  
IF = 100 A, VR = 300 V,  
VGE = -15 V, -diF/dt = 12.5  
kA/µs (Tvj = 150 °C)  
mJ  
Thermal resistance, junction  
to heatsink  
RthJH  
Tvj op  
per diode, λgrease= 3.3 W/(m*K)  
K/W  
°C  
Temperature under  
switching conditions  
-40  
150  
7
NTC-Thermistor  
Table 13  
Characteristic values  
Parameter  
Symbol Note or test condition  
Values  
Unit  
Min. Typ. Max.  
Rated resistance  
Deviation of R100  
Power dissipation  
B-value  
R25  
ΔR/R  
P25  
TNTC = 25 °C  
5
kΩ  
%
TNTC = 100 °C, R100 = 493 Ω  
TNTC = 25 °C  
-5  
5
20  
mW  
K
B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))]  
B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))]  
B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]  
3375  
3411  
3433  
B-value  
K
B-value  
K
Note:  
Specification according to the valid application note.  
Datasheet  
9
1.00  
2021-06-25  
F3L400R07W3S5_B59  
™
EasyPACK module  
8 Characteristics diagrams  
8
Characteristics diagrams  
output characteristic (typical), IGBT, T1.1 / T1.2 /  
T4.1 / T4.2  
IC = f(VCE  
output characteristic (typical), IGBT, T1.1 / T1.2 /  
T4.1 / T4.2  
IC = f(VCE)  
)
VGE = 15 V  
Tvj = 150 °C  
200  
200  
180  
160  
140  
120  
100  
80  
180  
160  
140  
120  
100  
80  
60  
60  
40  
40  
20  
20  
0
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8  
transfer characteristic (typical), IGBT, T1.1 / T1.2 /  
T4.1 / T4.2  
switching losses (typical), IGBT, T1.1 / T1.2 / T4.1 /  
T4.2  
IC = f(VGE  
)
E = f(IC)  
VCE = 20 V  
RGoff = 4.7 Ω, RGon = 4.7 Ω, VCE = 300 V, VGE = 15 V  
200  
3.00  
2.75  
2.50  
2.25  
2.00  
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
0.25  
0.00  
180  
160  
140  
120  
100  
80  
60  
40  
20  
0
3
4
5
6
7
0
20 40 60 80 100 120 140 160 180 200  
Datasheet  
10  
1.00  
2021-06-25  
F3L400R07W3S5_B59  
™
EasyPACK module  
8 Characteristics diagrams  
switching losses (typical), IGBT, T1.1 / T1.2 / T4.1 /  
T4.2  
E = f(RG)  
switching times (typical), IGBT, T1.1 / T1.2 / T4.1 / T4.2  
t = f(IC)  
RGoff = 4.7 Ω, RGon = 4.7 Ω, VCE = 300 V, VGE  
150 °C  
= 15 V, Tvj =  
IC = 100 A, VCE = 300 V, VGE  
= 15 V  
8
1
7
6
5
4
3
2
1
0
0.1  
0.01  
0.001  
0
5
10 15 20 25 30 35 40 45 50  
0
20 40 60 80 100 120 140 160 180 200  
switching times (typical), IGBT, T1.1 / T1.2 / T4.1 / T4.2 transient thermal impedance , IGBT, T1.1 / T1.2 / T4.1 /  
T4.2  
Zth = f(t)  
t = f(RG)  
IC = 100 A, VCE = 300 V, VGE  
= 15 V, Tvj = 150 °C  
1
1
0.1  
0.1  
0.01  
0.01  
0
5
10 15 20 25 30 35 40 45 50  
0.001  
0.01  
0.1  
1
10  
Datasheet  
11  
1.00  
2021-06-25  
F3L400R07W3S5_B59  
™
EasyPACK module  
8 Characteristics diagrams  
reverse bias safe operating area (RBSOA), IGBT, T1.1 / capacity characteristic (typical), IGBT, T1.1 / T1.2 /  
T1.2 / T4.1 / T4.2  
IC = f(VCE  
T4.1 / T4.2  
C = f(VCE  
)
)
RGoff = 4.7 Ω, VGE = 15 V, Tvj = 150 °C  
f = 100 kHz, VGE = 0 V, Tvj = 25 °C  
500  
100  
450  
400  
350  
300  
250  
200  
150  
100  
50  
10  
1
0.1  
0.01  
0
0
100  
200  
300  
400  
500  
600  
700  
0
10 20 30 40 50 60 70 80 90 100  
gate charge characteristic (typical), IGBT, T1.1 / T1.2 / output characteristic (typical), IGBT, T2 / T3  
T4.1 / T4.2  
VGE = f(QG)  
IC = 200 A, Tvj = 25 °C  
IC = f(VCE  
VGE = 15 V  
)
15  
10  
5
200  
180  
160  
140  
120  
100  
80  
0
-5  
60  
40  
-10  
-15  
20  
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9  
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0  
Datasheet  
12  
1.00  
2021-06-25  
F3L400R07W3S5_B59  
™
EasyPACK module  
8 Characteristics diagrams  
output characteristic (typical), IGBT, T2 / T3  
transfer characteristic (typical), IGBT, T2 / T3  
IC = f(VGE  
IC = f(VCE  
)
)
Tvj = 150 °C  
VCE = 20 V  
200  
200  
180  
160  
140  
120  
100  
80  
180  
160  
140  
120  
100  
80  
60  
60  
40  
40  
20  
20  
0
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0  
3
4
5
6
7
switching losses (typical), IGBT, T2 / T3  
E = f(IC)  
switching losses (typical), IGBT, T2 / T3  
E = f(RG)  
RGoff = 6.8 Ω, RGon = 6.8 Ω, VCE = 300 V, VGE  
=
15 V  
IC = 100 A, VCE = 300 V, VGE = 15 V  
16  
14  
12  
10  
8
12  
11  
10  
9
8
7
6
5
6
4
4
3
2
2
1
0
0
0
20 40 60 80 100 120 140 160 180 200  
0
10  
20  
30  
40  
50  
60  
70  
Datasheet  
13  
1.00  
2021-06-25  
F3L400R07W3S5_B59  
™
EasyPACK module  
8 Characteristics diagrams  
switching times (typical), IGBT, T2 / T3  
switching times (typical), IGBT, T2 / T3  
t = f(IC)  
t = f(RG)  
RGoff = 6.8 Ω, RGon = 6.8 Ω, VCE = 300 V, VGE  
150 °C  
=
15 V, Tvj =  
IC = 100 A, VCE = 300 V, VGE = 15 V, Tvj = 150 °C  
10  
10  
1
1
0.1  
0.01  
0.1  
0.01  
0
20 40 60 80 100 120 140 160 180 200  
0
10  
20  
30  
40  
50  
60  
70  
transient thermal impedance , IGBT, T2 / T3  
Zth = f(t)  
reverse bias safe operating area (RBSOA), IGBT, T2 / T3  
IC = f(VCE  
)
RGoff = 6.8 Ω, VGE = 15 V, Tvj = 150 °C  
1
700  
600  
500  
400  
300  
200  
100  
0
0.1  
0.01  
0.001  
0
100  
200  
300  
400  
500  
600  
700  
0.001  
0.01  
0.1  
1
10  
Datasheet  
14  
1.00  
2021-06-25  
F3L400R07W3S5_B59  
™
EasyPACK module  
8 Characteristics diagrams  
capacity characteristic (typical), IGBT, T2 / T3  
gate charge characteristic (typical), IGBT, T2 / T3  
VGE = f(QG)  
C = f(VCE  
)
f = 100 kHz, VGE = 0 V, Tvj = 25 °C  
IC = 200 A, Tvj = 25 °C  
1000  
15  
10  
5
100  
10  
1
0
-5  
-10  
-15  
0.1  
0
10 20 30 40 50 60 70 80 90 100  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
forward characteristic (typical), Diode, D1 / D4  
IF = f(VF)  
switching losses (typical), Diode, D1 / D4  
Erec = f(IF)  
RGon = 6.8 Ω, VCE = 300 V  
200  
180  
160  
140  
120  
100  
80  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
60  
40  
20  
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
0
20 40 60 80 100 120 140 160 180 200  
Datasheet  
15  
1.00  
2021-06-25  
F3L400R07W3S5_B59  
™
EasyPACK module  
8 Characteristics diagrams  
switching losses (typical), Diode, D1 / D4  
Erec = f(RG)  
transient thermal impedance , Diode, D1 / D4  
Zth = f(t)  
VCE = 300 V, IF = 100 A  
3.6  
3.3  
3.0  
2.7  
2.4  
2.1  
1.8  
1.5  
1.2  
0.9  
0.6  
0.3  
0.0  
1
0.1  
0.01  
0
10  
20  
30  
40  
50  
60  
70  
0.001  
0.01  
0.1  
1
10  
forward characteristic (typical), Diode, D2 / D3  
IF = f(VF)  
switching losses (typical), Diode, D2 / D3  
Erec = f(IF)  
RGon = 6.8 Ω, VCE = 300 V  
200  
180  
160  
140  
120  
100  
80  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
60  
40  
20  
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
0
20 40 60 80 100 120 140 160 180 200  
Datasheet  
16  
1.00  
2021-06-25  
F3L400R07W3S5_B59  
™
EasyPACK module  
8 Characteristics diagrams  
switching losses (typical), Diode, D2 / D3  
Erec = f(RG)  
transient thermal impedance , Diode, D2 / D3  
Zth = f(t)  
VCE = 300 V, IF = 100 A  
3.6  
3.3  
3.0  
2.7  
2.4  
2.1  
1.8  
1.5  
1.2  
0.9  
0.6  
0.3  
0.0  
1
0.1  
0.01  
0
10  
20  
30  
40  
50  
60  
70  
0.001  
0.01  
0.1  
1
10  
forward characteristic of (typical), Diode, D5 / D6  
IF = f(VF)  
switching losses (typical), Diode, D5 / D6  
Erec = f(IF)  
RGon = 4.7 Ω, VCE = 300 V  
200  
180  
160  
140  
120  
100  
80  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
60  
40  
20  
0
0.00  
0.25  
0.50  
0.75  
1.00  
1.25  
1.50  
0
20 40 60 80 100 120 140 160 180 200  
Datasheet  
17  
1.00  
2021-06-25  
F3L400R07W3S5_B59  
™
EasyPACK module  
8 Characteristics diagrams  
switching losses (typical), Diode, D5 / D6  
Erec = f(RG)  
transient thermal impedance , Diode, D5 / D6  
Zth = f(t)  
VCE = 300 V, IF = 100 A  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1
0.1  
0.01  
0
5
10 15 20 25 30 35 40 45 50  
0.001  
0.01  
0.1  
1
10  
temperature characteristic (typical), NTC-Thermistor  
R = f(TNTC  
)
100000  
10000  
1000  
100  
0
25  
50  
75  
100  
125  
150  
Datasheet  
18  
1.00  
2021-06-25  
F3L400R07W3S5_B59  
™
EasyPACK module  
9 Circuit diagram  
9
Circuit diagram  
Figure 2  
Datasheet  
19  
1.00  
2021-06-25  
F3L400R07W3S5_B59  
™
EasyPACK module  
10 Package outlines  
10  
Package outlines  
dimensioned for EJOT Delta PT WN5451 25  
choose length according to pcb thickness  
max. screw-in depth 8,5mm  
4x  
r
4x P3,5  
pcb hole pattern  
e
(P4,2)  
h
s
a
w
d
a
e
h
w
26  
24  
20,8  
17,6  
DC+DC+DC+DC+ N1  
N1 N2  
N1 N2  
N2 DC- DC-DC-DC-  
e
r
c
s
N1  
N1  
N2  
N2  
o
t
G4.2  
1
DC+DC+  
DC- DC-  
G4.1 HE4 HE4  
,
0
g
N1 N2  
n
i
B
14  
2
d
1
4
r
,
P
o
c
c
5
x
P
2
a
x
HE1 HE1  
2
5
4,8  
4
,
G1.1  
G1.2  
0
0
B
0
2
6
HE3  
G3  
4,8  
8
11,2  
NTC1  
NTC2  
14  
17,6  
20,8  
24  
)
Phase1  
Phase1  
G2  
Phase1  
Phase1  
Phase2  
Phase2  
4
Phase2  
,
3
P
(
Phase1  
HE2  
Phase1  
Phase2  
Phase2 Phase2  
26  
0
3
3
4
4
,
,
7
7
4
4
(99,3B0,1) Distance of threaded holes in heatsink  
109,9B0,45  
0
3
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
3
0
6
2
0
8
6
2
0
0
2
6
8
0
2
6
8
0
4
4
4
4
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
6
9
3
0
6
3
7
7
3
6
0
3
9
2
6
6
4
4
6
4
4
1
1
1
1
3
2
2
2
2
2
2
3
3
2
2
4
4
- Details about hole specification for contacts refer to AN2009-01 chapter 2  
- Diameters of drill P1,15mm  
1
,
0
)
- Copper thickness in hole 25~50um  
B
2
)
1
4
(
2
,
,
6
2
1
1
(
recommended design hight  
Figure 3  
11  
Module label code  
Module label code  
Code format  
Data Matrix  
ASCII text  
16x16  
Barcode Code128  
Code Set A  
23 digits  
Encoding  
Symbol size  
Standard  
IEC24720 and IEC16022  
IEC8859-1  
Code content  
Example  
Content  
Digit  
1 – 5  
6 - 11  
12 - 19  
20 – 21  
22 – 23  
Example  
71549  
142846  
55054991  
15  
Module serial number  
Module material number  
Production order number  
Date code (production year)  
Date code (production week)  
30  
71549142846550549911530  
71549142846550549911530  
Figure 4  
Datasheet  
20  
1.00  
2021-06-25  
F3L400R07W3S5_B59  
™
EasyPACK module  
Revision history  
Revision history  
Document revision  
Date of release Description of changes  
0.10  
1.00  
2021-04-28  
2021-06-25  
Target datasheet  
Final datasheet  
Datasheet  
21  
1.00  
2021-06-25  
Trademarks  
All referenced product or service names and trademarks are the property of their respective owners.  
Edition 2021-06-25  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
IMPORTANT NOTICE  
Please note that this product is not qualified  
according to the AEC Q100 or AEC Q101 documents  
of the Automotive Electronics Council.  
The information given in this document shall in no  
event be regarded as a guarantee of conditions or  
characteristics (“Beschaffenheitsgarantie”).  
With respect to any examples, hints or any typical  
values stated herein and/or any information regarding  
the application of the product, Infineon Technologies  
hereby disclaims any and all warranties and liabilities  
of any kind, including without limitation warranties of  
non-infringement of intellectual property rights of any  
third party.  
In addition, any information given in this document is  
subject to customer’s compliance with its obligations  
stated in this document and any applicable legal  
requirements, norms and standards concerning  
customer’s products and any use of the product of  
Infineon Technologies in customer’s applications.  
WARNINGS  
Due to technical requirements products may contain  
dangerous substances. For information on the types  
in question please contact your nearest Infineon  
Technologies office.  
©
2021 Infineon Technologies AG  
All Rights Reserved.  
Except as otherwise explicitly approved by Infineon  
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Document reference  
IFX-AAS474-002  
The data contained in this document is exclusively  
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