F4-150R17N3P4_B58 [INFINEON]

Solder pin;


型号：	F4-150R17N3P4_B58
厂家：	Infineon
描述：	Solder pin
文件：	总14页 (文件大小：467K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

F4-150R17N3P4_B58

™

EconoPACK 3 module

™

EconoPACK 3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diode and NTC

Features

• Electrical features

- V_CES= 1700 V

- I_{C nom}= 150 A / I_CRM= 300 A

- Low V_CEsat

- T_{vj op}= 150 °C

- Trench IGBT 4

- V_CEsatwith positive temperature coeﬀicient

• Mechanical features

- Integrated NTC temperature sensor

- Standard housing

- Solder contact technology

- Isolated base plate

Potential applications

• High power converters

• Medium voltage converters

Product validation

• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068

Description

Datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

1.00

2021-05-11

F4-150R17N3P4_B58

™

EconoPACK 3 module

Table of contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Diode, Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7

Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Datasheet

1.00

2021-05-11

F4-150R17N3P4_B58

™

EconoPACK 3 module

1 Package

Package

Table 1

Insulation coordination

Symbol Note or test condition

Parameter

Values

3.4

Unit

Isolation test voltage

V_ISOL

RMS, f = 50 Hz, t = 1 min

Material of module

baseplate

Internal Isolation

Creepage distance

Clearance

basic insulation (class 1, IEC 61140)

Al₂O₃

10.0

7.5

d_Creepterminal to heatsink

d_Clearterminal to heatsink

Comparative tracking index

RTI Elec.

CTI

> 225

140

RTI

housing

°C

Table 2

Characteristic values

Symbol Note or test condition

Parameter

Values

Unit

Min. Typ. Max.

Stray inductance module

L_sCE

Module lead resistance,

terminals - chip

R_AA'+CC'T_C=25°C, per switch

R_CC'+EE'T_C=25°C, per switch

T_stg

mΩ

Module lead resistance,

terminals - chip

mΩ

Storage temperature

-40

125

°C

Mounting torque for modul

mounting

- Mounting according to M5, Screw

valid application note

Weight

300

IGBT, Inverter

Table 3

Maximum rated values

Symbol Note or test condition

V_CES

Parameter

Values

1700

150

Unit

Collector-emitter voltage

T_vj= 25 °C

T_C= 90 °C

Implemented collector

current

I_CN

Continous DC collector

current

I_CDC

I_CRM

V_GES

T_{vj max}= 175 °C

t_P= 1 ms

150

300

Repetitive peak collector

current

Gate-emitter peak voltage

Datasheet

1.00

2021-05-11

F4-150R17N3P4_B58

™

EconoPACK 3 module

2 IGBT, Inverter

Table 4

Characteristic values

Parameter

Symbol Note or test condition

Values

Unit

Min. Typ. Max.

Collector-emitter saturation

voltage

V_{CE sat}I_C= 150 A, V_GE= 15 V

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

1.70

2.05

2.10

5.80

1.53

4.6

2.20

Gate threshold voltage

Gate charge

V_GEth

Q_G

I_C= 6 mA, V_CE= V_GE, T_vj= 25 °C

5.35

6.25

V_GE= 15 V

µC

Ω

Internal gate resistor

Input capacitance

R_Gint

C_ies

C_res

I_CES

T_vj= 25 °C

f = 1000 kHz, T_vj= 25 °C, V_CE= 25 V, V_GE= 0 V

12.3

0.4

Reverse transfer capacitance

Collector-emitter cut-oﬀ

current

V_CE= 1700 V, V_GE= 0 V

T_vj= 25 °C

Gate-emitter leakage current

I_GES

t_don

V_CE= 0 V, V_GE= 20 V, T_vj= 25 °C

100

µs

Turn-on delay time

(inductive load)

I_C= 150 A, V_CE= 900 V,

V_GE= 15 V, R_Gon= 0.91 Ω

T_vj= 25 °C

0.205

0.228

0.234

0.064

0.074

0.076

0.525

0.680

0.713

0.594

0.833

0.892

47.6

T_vj= 125 °C

T_vj= 150 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

Rise time (inductive load)

t_r

t_doﬀ

t_f

I_C= 150 A, V_CE= 900 V,

µs

V_GE= 15 V, R_Gon= 0.91 Ω

Turn-oﬀ delay time

(inductive load)

I_C= 150 A, V_CE= 900 V,

V_GE= 15 V,

R_Goﬀ= 0.91 Ω

Fall time (inductive load)

I_C= 150 A, V_CE= 900 V,

V_GE= 15 V,

R_Goﬀ= 0.91 Ω

Turn-on energy loss per

pulse

E_on

I_C= 150 A, V_CE= 900 V,

L_σ= 35 nH, V_GE= 15 V,

R_Gon= 0.91 Ω, di/dt =

1250 A/µs (T_vj= 150 °C)

63.9

68.8

Turn-oﬀ energy loss per

pulse

E_oﬀ

I_C= 150 A, V_CE= 900 V,

L_σ= 35 nH, V_GE= 15 V,

R_Goﬀ= 0.91 Ω, dv/dt =

4150 V/µs (T_vj= 150 °C)

50.8

69.3

74.2

SC data

I_SC

V_GE≤ 15 V, V_CC= 1000 V, t_P≤ 10 µs,

600

V_CEmax=V_CES-L_sCE*di/dt

T_vj= 150 °C

Thermal resistance, junction

to case

R_thJC

per IGBT

0.195 K/W

Datasheet

1.00

2021-05-11

F4-150R17N3P4_B58

™

EconoPACK 3 module

3 Diode, Inverter

Table 4

Characteristic values (continued)

Symbol Note or test condition

Parameter

Values

Min. Typ. Max.

0.0700

Unit

Thermal resistance, case to

heatsink

R_thCH

T_{vj op}

per IGBT, λ_grease= 1 W/(m*K)

K/W

°C

Temperature under

switching conditions

-40

150

Diode, Inverter

Table 5

Maximum rated values

Symbol Note or test condition

V_RRM

Parameter

Values

Unit

Repetitive peak reverse

voltage

T_vj= 25 °C

1700

Continous DC forward

current

I_F

I_FRM

I²t

150

300

Repetitive peak forward

current

I²t - value

t_P= 1 ms

t_P= 10 ms, V_R= 0 V

T_vj= 125 °C

T_vj= 150 °C

3950

3750

A²s

Table 6

Characteristic values

Symbol Note or test condition

Parameter

Values

Unit

Min. Typ. Max.

Forward voltage

V_F

I_F= 150 A, V_GE= 0 V

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

1.80

1.90

1.95

93.3

101

2.65

Peak reverse recovery

current

I_RM

V_R= 900 V, I_F= 150 A,

V_GE= -15 V, -di_F/dt =

1250 A/µs (T_vj= 150 °C)

102

Recovered charge

Q_r

V_R= 900 V, I_F= 150 A,

V_GE= -15 V, -di_F/dt =

1250 A/µs (T_vj= 150 °C)

33.9

57.9

64.7

17.3

32.8

37.1

µC

Reverse recovery energy

E_rec

V_R= 900 V, I_F= 150 A,

V_GE= -15 V, -di_F/dt =

1250 A/µs (T_vj= 150 °C)

Thermal resistance, junction

to case

R_thJC

per diode

0.365 K/W

Datasheet

1.00

2021-05-11

F4-150R17N3P4_B58

™

EconoPACK 3 module

4 Diode, Rectifier

Table 6

Characteristic values (continued)

Symbol Note or test condition

Parameter

Values

Min. Typ. Max.

0.0680

Unit

Thermal resistance, case to

heatsink

R_thCH

T_{vj op}

per diode, λ_grease= 1 W/(m*K)

K/W

°C

Temperature under

switching conditions

-40

150

Diode, Rectifier

Table 7

Maximum rated values

Symbol Note or test condition

V_RRM

Parameter

Values

Unit

Repetitive peak reverse

voltage

T_vj= 25 °C

1800

Maximum RMS forward

current per chip

I_FRMSMT_C= 95 °C

I_RMSMT_C= 95 °C

150

Maximum RMS current at

rectifier output

Surge forward current

I_FSM

I²t

t_P= 10 ms

T_vj= 25 °C

T_vj= 150 °C

T_vj= 25 °C

T_vj= 150 °C

1460

1260

10700

7940

I²t - value

A²s

Table 8

Characteristic values

Symbol Note or test condition

Parameter

Values

Unit

Min. Typ. Max.

Forward voltage

Threshold voltage

Slope resistance

Reverse current

V_F

V_(TO)

r_t

T_vj= 150 °C, I_F= 150 A

T_vj= 150 °C

1.00

0.76

1.6

T_vj= 150 °C

mΩ

I_r

T_vj= 150 °C, V_R= 1800 V

per diode

Thermal resistance, junction

to case

R_thJC

0.364 K/W

Thermal resistance, case to

heatsink

R_thCH

T_{vj, op}

per diode, λ_Paste= 1 W /(m*K) / λ_grease= 1

W/(m*K)

0.0680 K/W

Temperature under

switching conditions

-40

150

°C

Note:

The current under continuous operation is limited to 50 A rms per connector pin.

Datasheet

1.00

2021-05-11

F4-150R17N3P4_B58

™

EconoPACK 3 module

5 NTC-Thermistor

NTC-Thermistor

Table 9

Characteristic values

Symbol Note or test condition

Parameter

Values

Unit

Min. Typ. Max.

Rated resistance

Deviation of R₁₀₀

Power dissipation

B-value

R₂₅

ΔR/R

P₂₅

T_NTC= 25 °C

kΩ

T_NTC= 100 °C, R₁₀₀= 493 Ω

T_NTC= 25 °C

-5

B_25/50R₂= R₂₅exp[B_25/50(1/T₂-1/(298,15 K))]

B_25/80R₂= R₂₅exp[B_25/80(1/T₂-1/(298,15 K))]

B_25/100R₂= R₂₅exp[B_25/100(1/T₂-1/(298,15 K))]

3375

3411

3433

B-value

Note:

Specification according to the valid application note.

Datasheet

1.00

2021-05-11

F4-150R17N3P4_B58

™

EconoPACK 3 module

6 Characteristics diagrams

Characteristics diagrams

output characteristic (typical), IGBT, Inverter

I_C= f(V_CE

output characteristic (typical), IGBT, Inverter

I_C= f(V_CE

)

V_GE= 15 V

T_vj= 150 °C

300

275

250

225

200

175

150

125

100

275

250

225

200

175

150

125

100

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

transfer characteristic (typical), IGBT, Inverter

I_C= f(V_GE

switching losses (typical), IGBT, Inverter

E = f(I_C)

)

V_CE= 20 V

R_Goﬀ= 0.91 Ω, R_Gon= 0.91 Ω, V_CE= 900 V, V_GE= -15 / 15 V

300

250

225

200

175

150

125

100

275

250

225

200

175

150

125

100

150

200

250

300

Datasheet

1.00

2021-05-11

F4-150R17N3P4_B58

™

EconoPACK 3 module

6 Characteristics diagrams

switching losses (typical), IGBT, Inverter

E = f(R_G)

switching times (typical), IGBT, Inverter

t = f(I_C)

I_C= 150 A, V_CE= 900 V, V_GE= -15 / 15 V

R_Goﬀ= 0.91 Ω, R_Gon= 0.91 Ω, V_CE= 900 V, V_GE= -15 / 15 V,

T_vj= 150 °C

150

125

100

0.1

0.01

100

150

200

250

300

switching times (typical), IGBT, Inverter

transient thermal impedance , IGBT, Inverter

t = f(R_G)

Z_th= f(t)

I_C= 150 A, V_CE= 900 V, V_GE= -15 / 15 V, T_vj= 150 °C

0.1

0.01

0.001

0.01

0.1

Datasheet

1.00

2021-05-11

F4-150R17N3P4_B58

™

EconoPACK 3 module

6 Characteristics diagrams

reverse bias safe operating area (RBSOA), IGBT,

Inverter

forward characteristic (typical), Diode, Inverter

I_F= f(V_F)

I_C= f(V_CE

)

R_Goﬀ= 0.91 Ω, V_GE= 15 V, T_vj= 150 °C

400

300

275

250

225

200

175

150

125

100

350

300

250

200

150

100

200 400 600 800 1000 1200 1400 1600 1800

0.0

0.5

1.0

1.5

2.0

2.5

3.0

switching losses (typical), Diode, Inverter

E_rec= f(I_F)

switching losses (typical), Diode, Inverter

E_rec= f(R_G)

V_CE= 900 V, R_Gon= R_Gon(IGBT)

V_CE= 900 V, I_F= 150 A

100

150

200

250

300

Datasheet

1.00

2021-05-11

F4-150R17N3P4_B58

™

EconoPACK 3 module

6 Characteristics diagrams

transient thermal impedance , Diode, Inverter

Forward characteristic (typical), Diode, Rectifier

Z_th= f(t)

I_F= f(V_F)

300

250

200

150

100

0.1

0.01

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.001

0.01

0.1

Transient thermal impedance, Diode, Rectifier

Z_th= f(t)

Temperature characteristic (typical), NTC-Thermistor

R = f(T_NTC

)

100000

10000

1000

0.1

100

0.01

100

125

150

0.001

0.01

0.1

Datasheet

1.00

2021-05-11

F4-150R17N3P4_B58

™

EconoPACK 3 module

7 Circuit diagram

Circuit diagram

Figure 2

Package outlines

Infineon

Figure 3

Datasheet

1.00

2021-05-11

F4-150R17N3P4_B58

™

EconoPACK 3 module

Revision history

Document revision

Date of release Description of changes

1.00

2021-05-11

Final datasheet

Datasheet

1.00

2021-05-11

Trademarks

All referenced product or service names and trademarks are the property of their respective owners.

Edition 2021-05-11

Published by

Infineon Technologies AG

81726 Munich, Germany

IMPORTANT NOTICE

Please note that this product is not qualified

according to the AEC Q100 or AEC Q101 documents

of the Automotive Electronics Council.

The information given in this document shall in no

event be regarded as a guarantee of conditions or

characteristics (“Beschaﬀenheitsgarantie”).

With respect to any examples, hints or any typical

values stated herein and/or any information regarding

the application of the product, Infineon Technologies

hereby disclaims any and all warranties and liabilities

of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any

third party.

In addition, any information given in this document is

subject to customer’s compliance with its obligations

stated in this document and any applicable legal

requirements, norms and standards concerning

customer’s products and any use of the product of

Infineon Technologies in customer’s applications.

WARNINGS

Due to technical requirements products may contain

dangerous substances. For information on the types

in question please contact your nearest Infineon

Technologies oﬀice.

2021 Infineon Technologies AG

Except as otherwise explicitly approved by Infineon

Technologies in

a written document signed by

Do you have a question about any

aspect of this document?

Email: erratum@infineon.com

authorized representatives of Infineon Technologies,

Infineon Technologies’ products may not be used in

any applications where a failure of the product or

any consequences of the use thereof can reasonably

be expected to result in personal injury.

Document reference

IFX-AAZ508-001

The data contained in this document is exclusively

intended for technically trained staﬀ. It is the

responsibility of customer’s technical departments to

evaluate the suitability of the product for the intended

application and the completeness of the product

information given in this document with respect to such

application.

F4-150R17N3P4_B58 [INFINEON]

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