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F4-45MR12W1M1_B76 [INFINEON]

PressFIT;
F4-45MR12W1M1_B76
型号： F4-45MR12W1M1_B76
厂家： Infineon    Infineon
描述：

PressFIT
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F4-45MR12W1M1_B76  
™
EasyPACK module  
Preliminary datasheet  
EasyPACK module with CoolSiC Trench MOSFET and PressFIT / NTC  
™
™
Features  
• Electrical features  
- VDSS = 1200 V  
- IDN = 25 A / IDRM = 50 A  
- High current density  
- Low inductive design  
- Low switching losses  
• Mechanical features  
- Rugged mounting due to integrated mounting clamps  
- Integrated NTC temperature sensor  
- PressFIT contact technology  
Potential applications  
• DC/DC converter  
• High Frequency Switching application  
• Welding  
• DC charger for EV  
Product validation  
• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068  
Description  
Datasheet  
www.infineon.com  
Please read the Important Notice and Warnings at the end of this document  
0.20  
2021-02-12  
F4-45MR12W1M1_B76  
™
EasyPACK module  
Table of contents  
Table of contents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1  
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Body diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5  
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10  
Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12  
1
2
3
4
5
6
7
8
Datasheet  
2
0.20  
2021-02-12  
F4-45MR12W1M1_B76  
™
EasyPACK module  
1 Package  
1
Package  
Table 1  
Insulation Coordination  
Symbol Note or test condition  
Parameter  
Values  
3.0  
Unit  
Isolation test voltage  
Internal Isolation  
Creepage distance  
Creepage distance  
Clearance  
VISOL  
RMS, f = 50 Hz, t = 1 min  
kV  
basic insulation (class 1, IEC 61140)  
Al2O3  
11.5  
6.3  
dCreep terminal to heatsink  
mm  
mm  
mm  
mm  
dCreep terminal to terminal  
dClear terminal to heatsink  
dClear terminal to terminal  
CTI  
10.0  
5.0  
Clearance  
Comparative tracking index  
RTI Elec.  
> 200  
140  
RTI  
housing  
°C  
Table 2  
Characteristic Values  
Symbol Note or test condition  
Parameter  
Values  
Min. Typ. Max.  
14  
Unit  
Stray inductance module  
Storage temperature  
Mounting force per clamp  
Weight  
LsCE  
nH  
°C  
N
Tstg  
F
-40  
20  
125  
50  
G
24  
g
Note:  
The current under continuous operation is limited to 25 A rms per connector pin.  
Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior  
of the device. The design guidelines described in Application Note AN 2018-09 must be considered to ensure  
sound operation of the device over the planned lifetime.  
2
MOSFET  
Table 3  
Maximum Rated Values  
Parameter  
Symbol Note or test condition  
Values  
1200  
25  
Unit  
Drain-source voltage  
VDSS  
IDN  
Tvj = 25 °C  
TH = 65 °C  
V
A
A
A
V
Implemented drain current  
Continuous DC drain current  
Repetitive peak drain current  
Gate-source voltage  
IDDC  
IDRM  
VGSS  
Tvj = 175 °C, VGS = 15 V  
25  
verified by design, tp limited by Tvjmax  
50  
-10/+20  
Datasheet  
3
0.20  
2021-02-12  
F4-45MR12W1M1_B76  
™
EasyPACK module  
2 MOSFET  
Table 4  
Characteristic Values  
Parameter  
Symbol Note or test condition  
Values  
Unit  
Min. Typ. Max.  
Drain-source on resistance  
RDS(on) ID = 25 A, VGS = 15 V  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
45  
59  
66  
mΩ  
Gate threshold voltage  
VGS(th) ID = 10 mA, VDS = VGS, Tvj = 25 °C, (tested afte 3.45  
4.5  
5.55  
V
1ms pulse at VGS = +20 V)  
Total gate charge  
Internal gate resistor  
Input capacitance  
QG  
RGint  
CISS  
VDS = 800 V, VGS = -5/+15 V  
Tvj = 25 °C  
0.062  
4
µC  
Ω
f = 1 MHz, VDS = 800 V,  
VGS = 0 V  
Tvj = 25 °C  
Tvj = 25 °C  
Tvj = 25 °C  
1.84  
nF  
Output capacitance  
COSS  
Crss  
f = 1 MHz, VDS = 800 V,  
VGS = 0 V  
0.11  
nF  
nF  
Reverse transfer capacitance  
f = 1 MHz, VDS = 800 V,  
VGS = 0 V  
0.014  
COSS stored energy  
EOSS  
IDSS  
IGSS  
td on  
VDS = 800 V, VGS = -5/+15 V, Tvj = 25 °C  
44  
µJ  
µA  
nA  
ns  
Drain-source leakage current  
Gate-source leakage current  
VDS = 1200 V, VGS = -5 V  
VDS = 0 V, Tvj = 25 °C  
Tvj = 25 °C  
VGS = 20 V  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
0.1  
120  
400  
Turn-on delay time  
(inductive load)  
ID = 25 A, RGon = 7.5 Ω,  
VDS = 600 V,  
19  
19  
VGS = -5/+15 V  
19  
Rise time (inductive load)  
tr  
td off  
tf  
ID = 25 A, RGon = 7.5 Ω,  
VDS = 600 V,  
9
ns  
ns  
8
VGS = -5/+15 V  
8
Tuen-off delay time  
(inductive load)  
ID = 25 A, RGoff = 3.9 Ω,  
VDS = 600 V,  
39  
42  
VGS = -5/+15 V  
43  
Fall time (inductive load)  
ID = 25 A, RGoff = 3.9 Ω,  
VDS = 600 V,  
16  
ns  
16  
VGS = -5/+15 V  
16  
Turn-on energy loss per  
pulse  
Eon  
ID = 25 A, VDS = 600 V,  
0.313  
0.368  
0.388  
mJ  
L = 35 nH,  
σ
VGS = -5/+15 V,  
RGon = 7.5 Ω, di/dt = 2.3  
kA/µs (Tvj = 150 °C)  
Datasheet  
4
0.20  
2021-02-12  
F4-45MR12W1M1_B76  
™
EasyPACK module  
3 Body diode  
Table 4  
Characteristic Values (continued)  
Symbol Note or test condition  
Parameter  
Values  
Unit  
Min. Typ. Max.  
Tuen-off energy loss per  
pulse  
Eoff  
ID = 25 A, VDS = 600 V,  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
0.07  
0.071  
0.071  
mJ  
L = 35 nH,  
σ
VGS = -5/+15 V,  
RGoff = 3.9 Ω, dv/dt = 38.2  
kV/µs (Tvj = 150 °C)  
Thermal resistance, junction  
to heatsink  
RthJH  
Tvj op  
per MOSFET  
1.82  
K/W  
°C  
Temperature under  
switching conditions  
-40  
150  
3
Body diode  
Table 5  
Maximum Rated Values  
Symbol Note or test condition  
Parameter  
Values  
Unit  
DC body diode forward  
current  
ISD  
Tvj = 175 °C, VGS = -5 V  
TH = 65 °C  
8
A
Table 6  
Characteristic Values  
Parameter  
Symbol Note or test condition  
Values  
Unit  
Min. Typ. Max.  
Forward voltage  
VSD  
ISD = 25 A, VGS = -5 V  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
4.6  
4.35  
4.3  
5.65  
V
4
NTC-Thermistor  
Table 7  
Characteristic Values  
Parameter  
Symbol Note or test condition  
Values  
Unit  
Min. Typ. Max.  
Rated resistance  
Deviation of R100  
Power dissipation  
B-value  
R25  
ΔR/R  
P25  
TNTC = 25 °C  
5
kΩ  
%
TNTC = 100 °C, R100 = 493 Ω  
TNTC = 25 °C  
-5  
5
20  
mW  
K
B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))]  
B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))]  
B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]  
3375  
3411  
3433  
B-value  
K
B-value  
K
Note:  
Specification according to the valid application note.  
Datasheet  
5
0.20  
2021-02-12  
F4-45MR12W1M1_B76  
™
EasyPACK module  
5 Characteristics diagrams  
5
Characteristics diagrams  
output characteristic (typical), MOSFET  
ID = f(VDS  
output characteristic (typical), MOSFET  
ID = f(VDS  
)
)
VGS = 15 V  
Tvj = 150 °C  
50  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
45  
40  
35  
30  
25  
20  
15  
10  
5
0
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
transfer characteristic (typical), MOSFET  
ID = f(VGS  
capacity characteristic (typical), MOSFET  
C = f(VDS  
)
)
VDS = 20 V  
f = 1 MHz, Tvj = 25 °C, VGS = 0 V  
50  
10  
45  
40  
35  
30  
25  
20  
15  
10  
5
1
0.1  
0
0.01  
4
5
6
7
8
9
10  
11  
12  
0.1  
1
10  
100  
1000  
Datasheet  
6
0.20  
2021-02-12  
F4-45MR12W1M1_B76  
™
EasyPACK module  
5 Characteristics diagrams  
switching losses (typical), MOSFET  
E = f(ID)  
switching losses (typical), MOSFET  
E = f(RG)  
RGoff = 3.9 Ω, RGon = 7.5 Ω, VDS = 600 V, VGS = -5.0/15.0 V  
VDS = 600 V, ID = 25 A, VGS = -5.0/15.0 V  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
0
5
10 15 20 25 30 35 40 45 50  
0
10  
20  
30  
40  
50  
60  
70  
80  
reverse bias safe operating area (RBSOA), MOSFET  
ID = f(VDS  
transient thermal impedance , MOSFET  
Zth = f(t)  
)
RGoff = 3.9 Ω, Tvj = 150 °C, VGS = -5/15 V  
60  
10  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
1
0.1  
0
0.01  
0
200  
400  
600  
800  
1000 1200 1400  
0.001  
0.01  
0.1  
1
10  
Datasheet  
7
0.20  
2021-02-12  
F4-45MR12W1M1_B76  
™
EasyPACK module  
5 Characteristics diagrams  
temperature characteristic (typical), NTC-Thermistor  
R = f(TNTC  
)
100000  
10000  
1000  
100  
0
25  
50  
75  
100  
125  
150  
Datasheet  
8
0.20  
2021-02-12  
F4-45MR12W1M1_B76  
™
EasyPACK module  
6 Circuit diagram  
6
Circuit diagram  
J
Figure 2  
Datasheet  
9
0.20  
2021-02-12  
F4-45MR12W1M1_B76  
™
EasyPACK module  
7 Package outlines  
7
Package outlines  
Infineon  
Figure 3  
Datasheet  
10  
0.20  
2021-02-12  
F4-45MR12W1M1_B76  
™
EasyPACK module  
8 Module label code  
8
Module label code  
Module label code  
Code format  
Encoding  
Data Matrix  
ASCII text  
Barcode Code128  
Code Set A  
23 digits  
Symbol size  
Standard  
16x16  
IEC24720 and IEC16022  
IEC8859-1  
Code content  
Content  
Digit  
1 – 5  
6 - 11  
12 - 19  
20 – 21  
22 – 23  
Example  
Module serial number  
Module material number  
Production order number  
Date code (production year)  
Date code (production week)  
71549  
142846  
55054991  
15  
30  
Example  
71549142846550549911530  
71549142846550549911530  
Figure 4  
Datasheet  
11  
0.20  
2021-02-12  
Trademarks  
All referenced product or service names and trademarks are the property of their respective owners.  
Edition 2021-02-12  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
IMPORTANT NOTICE  
Please note that this product is not qualified  
according to the AEC Q100 or AEC Q101 documents  
of the Automotive Electronics Council.  
The information given in this document shall in no  
event be regarded as a guarantee of conditions or  
characteristics (“Btschafftnhtiꢀsgaeanꢀit”).  
With respect to any examples, hints or any typical  
values stated herein and/or any information regarding  
the application of the product, Infineon Technologies  
hereby disclaims any and all warranties and liabilities  
of any kind, including without limitation warranties of  
non-infringement of intellectual property rights of any  
third party.  
In addition, any information given in this document is  
subject to customer’s compliance with its obligations  
stated in this document and any applicable legal  
requirements, norms and standards concerning  
customer’s products and any use of the product of  
Infineon Technologies in customer’s applications.  
WARNINGS  
Due to technical requirements products may contain  
dangerous substances. For information on the types  
in question please contact your nearest Infineon  
Technologies offict.  
©
2021 Infineon Technologies AG  
All Rights Reserved.  
Except as otherwise explicitly approved by Infineon  
Technologies in  
a written document signed by  
Do you have a question about any  
aspect of this document?  
Email: erratum@infineon.com  
authorized representatives of Infineon Technologies,  
Infineon Technologies’ products may not be used in  
any applications where a failure of the product or  
any consequences of the use thereof can reasonably  
be expected to result in personal injury.  
Document reference  
IFX-  
The data contained in this document is exclusively  
intended for technically trained sꢀaff. It is the  
responsibility of customer’s technical departments to  
evaluate the suitability of the product for the intended  
application and the completeness of the product  
information given in this document with respect to such  
application.  

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