FF650R17IE4V [INFINEON]
Insulated Gate Bipolar Transistor;
| 型号： | FF650R17IE4V |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor 栅 |
| 文件： | 总10页 (文件大小：1983K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
ꢀFF650R17IE4V
PrimePACK™2ꢀ模块ꢀ带有温度检测NTC
PrimePACK™2ꢀmoduleꢀandꢀNTC
初步数据ꢀ/ꢀPreliminaryꢀData
VCES = 1700V
IC nom = 650A / ICRM = 1300A
典型应用
TypicalꢀApplications
• 商业性农用车辆
• CommercialꢀAgricultureꢀVehicles
电气特性
ElectricalꢀFeatures
• ExtendedꢀOperationꢀTemperatureꢀTvjꢀop
• HighꢀDCꢀStability
• 提高工作结温ꢀTvjꢀop
• 高直流电压稳定性
• 高电流密度
• HighꢀCurrentꢀDensity
• LowꢀSwitchingꢀLosses
• LowꢀVCEsat
• 低开关损耗
• 低ꢀꢀVCEsat
• Tvjꢀopꢀ=ꢀ150°C
• Tvjꢀopꢀ=ꢀ150°C
机械特性
MechanicalꢀFeatures
• 封装的ꢀCTIꢀ>ꢀ400
• 高爬电距离和电气间隙
• 高功率循环和温度循环能力
• 高功率密度
• PackageꢀwithꢀCTIꢀ>ꢀ400
• HighꢀCreepageꢀandꢀClearanceꢀDistances
• HighꢀPowerꢀandꢀThermalꢀCyclingꢀCapability
• HighꢀPowerꢀDensity
• 铜基板
• CopperꢀBaseꢀPlate
• 标封装
• StandardꢀHousing
ModuleꢀLabelꢀCode
BarcodeꢀCodeꢀ128
ContentꢀofꢀtheꢀCode
ModuleꢀSerialꢀNumber
Digit
1ꢀ-ꢀꢀꢀ5
ModuleꢀMaterialꢀNumber
ProductionꢀOrderꢀNumber
Datecodeꢀ(ProductionꢀYear)
Datecodeꢀ(ProductionꢀWeek)
6ꢀ-ꢀ11
12ꢀ-ꢀ19
20ꢀ-ꢀ21
22ꢀ-ꢀ23
DMXꢀ-ꢀCode
preparedꢀby:ꢀTA
approvedꢀby:ꢀIB
dateꢀofꢀpublication:ꢀ2014-04-28
revision:ꢀ2.0
1
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
ꢀFF650R17IE4V
初步数据
PreliminaryꢀData
IGBT,ꢀ逆变器ꢀ/ꢀIGBT,Inverter
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues
集电极－发射极电压
Tvj = 25°C
VCES
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
1700
ꢀ
ꢀ
ꢀ
V
Collector-emitterꢀvoltage
连续集电极直流电流
ContinuousꢀDCꢀcollectorꢀcurrent
TC = 100°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC
650
930
A
A
集电极重复峰值电流
Repetitiveꢀpeakꢀcollectorꢀcurrent
tP = 1 ms
ICRM
Ptot
1300
4,15
A
总功率损耗
Totalꢀpowerꢀdissipation
TC = 25°C, Tvj max = 175°C
ꢀ kW
栅极－发射极峰值电压
Gate-emitterꢀpeakꢀvoltage
VGES
+/-20
ꢀ
V
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
集电极－发射极饱和电压
Collector-emitterꢀsaturationꢀvoltage
IC = 650 A, VGE = 15 V
IC = 650 A, VGE = 15 V
IC = 650 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
2,00 2,45
2,35 2,80
2,45
V
V
V
VCE sat
栅极阈值电压
Gateꢀthresholdꢀvoltage
IC = 24,0 mA, VCE = VGE, Tvj = 25°C
VGE = -15 V ... +15 V
VGEth
QG
5,2
5,8
7,00
2,3
6,4
V
µC
Ω
栅极电荷
Gateꢀcharge
内部栅极电阻
Internalꢀgateꢀresistor
Tvj = 25°C
RGint
Cies
Cres
ICES
IGES
td on
输入电容
Inputꢀcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
VCE = 1700 V, VGE = 0 V, Tvj = 25°C
VCE = 0 V, VGE = 20 V, Tvj = 25°C
54,0
1,70
nF
nF
反向传输电容
Reverseꢀtransferꢀcapacitance
集电极-发射极截止电流
Collector-emitterꢀcut-offꢀcurrent
5,0 mA
400 nA
栅极-发射极漏电流
Gate-emitterꢀleakageꢀcurrent
开通延迟时间(电感负载)
Turn-onꢀdelayꢀtime,ꢀinductiveꢀload
IC = 650 A, VCE = 900 V
VGE = ±15 V
RGon = 1,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,55
0,60
0,60
µs
µs
µs
上升时间(电感负载)
Riseꢀtime,ꢀinductiveꢀload
IC = 650 A, VCE = 900 V
VGE = ±15 V
RGon = 1,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,09
0,11
0,12
µs
µs
µs
tr
td off
tf
关断延迟时间(电感负载)
Turn-offꢀdelayꢀtime,ꢀinductiveꢀload
IC = 650 A, VCE = 900 V
VGE = ±15 V
RGoff = 2,7 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1,00
1,25
1,30
µs
µs
µs
下降时间(电感负载)
Fallꢀtime,ꢀinductiveꢀload
IC = 650 A, VCE = 900 V
VGE = ±15 V
RGoff = 2,7 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,29
0,49
0,57
µs
µs
µs
开通损耗能量ꢀ(每脉冲)
Turn-onꢀenergyꢀlossꢀperꢀpulse
IC = 650 A, VCE = 900 V, LS = 45 nH
VGE = ±15 V, di/dt = 5000 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 1,8 Ω
Tvj = 25°C
205
300
320
mJ
mJ
mJ
Eon
Eoff
Tvj = 150°C
关断损耗能量ꢀ(每脉冲）
Turn-offꢀenergyꢀlossꢀperꢀpulse
IC = 650 A, VCE = 900 V, LS = 45 nH
VGE = ±15 V, du/dt = 3200 V/µs (Tvj = 150°C)Tvj = 125°C
RGoff = 2,7 Ω
Tvj = 25°C
140
205
230
mJ
mJ
mJ
Tvj = 150°C
短路数据
SCꢀdata
VGE ≤ 15 V, VCC = 1000 V
VCEmax = VCES -LsCE ·di/dt
ISC
tP ≤ 10 µs, Tvj = 150°C
2700
A
结－外壳热阻
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase
每个ꢀIGBTꢀ/ꢀperꢀIGBT
每个ꢀIGBTꢀ/ꢀperꢀIGBT
RthJC
RthCH
Tvj op
36,0 K/kW
外壳－散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
14,0
K/kW
λPasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)
在开关状态下温度
Temperatureꢀunderꢀswitchingꢀconditions
-40
150
°C
preparedꢀby:ꢀTA
approvedꢀby:ꢀIB
dateꢀofꢀpublication:ꢀ2014-04-28
revision:ꢀ2.0
2
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
ꢀFF650R17IE4V
初步数据
PreliminaryꢀData
二极管,逆变器ꢀ/ꢀDiode,ꢀInverter
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues
反向重复峰值电压
Tvj = 25°C
VRRM
IF
IFRM
I²t
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
1700
650
ꢀ
ꢀ
ꢀ
V
A
A
Repetitiveꢀpeakꢀreverseꢀvoltage
连续正向直流电流
ContinuousꢀDCꢀforwardꢀcurrent
正向重复峰值电流
Repetitiveꢀpeakꢀforwardꢀcurrent
tP = 1 ms
1300
70,5
650
I2t-值
I²tꢀ-ꢀvalue
VR = 0 V, tP = 10 ms, Tvj = 125°C
Tvj = 125°C
ꢀ kA²s
ꢀ kW
最大损耗功率
Maximumꢀpowerꢀdissipation
PRQM
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
正向电压
Forwardꢀvoltage
IF = 650 A, VGE = 0 V
IF = 650 A, VGE = 0 V
IF = 650 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1,85 2,25
1,95 2,35
1,95
V
V
V
VF
IRM
Qr
反向恢复峰值电流
Peakꢀreverseꢀrecoveryꢀcurrent
IF = 650 A, - diF/dt = 5200 A/µs (Tvj=150°C) Tvj = 25°C
VR = 900 V
VGE = -15 V
695
760
805
A
A
A
Tvj = 125°C
Tvj = 150°C
恢复电荷
Recoveredꢀcharge
IF = 650 A, - diF/dt = 5200 A/µs (Tvj=150°C) Tvj = 25°C
VR = 900 V
VGE = -15 V
160
265
310
µC
µC
µC
Tvj = 125°C
Tvj = 150°C
反向恢复损耗（每脉冲）
Reverseꢀrecoveryꢀenergy
IF = 650 A, - diF/dt = 5200 A/µs (Tvj=150°C) Tvj = 25°C
76,0
135
160
mJ
mJ
mJ
VR = 900 V
VGE = -15 V
Tvj = 125°C
Tvj = 150°C
Erec
结－外壳热阻
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase
每个二极管ꢀ/ꢀperꢀdiode
RthJC
RthCH
Tvj op
71,5 K/kW
K/kW
外壳－散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
每个二极管ꢀ/ꢀperꢀdiode
λPasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)
27,0
在开关状态下温度
Temperatureꢀunderꢀswitchingꢀconditions
-40
150
°C
负温度系数热敏电阻ꢀ/ꢀNTC-Thermistor
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
5,00
额定电阻值
Ratedꢀresistance
TC = 25°C
R25
∆R/R
P25
kΩ
R100ꢀꢀ偏差
DeviationꢀofꢀR100
TC = 100°C, R100 = 493 Ω
-5
5
%
耗散功率
Powerꢀdissipation
TC = 25°C
20,0 mW
B-值
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/50
B25/80
B25/100
3375
3411
3433
K
K
K
B-值
B-value
B-值
B-value
根据应用手册标定
Specificationꢀaccordingꢀtoꢀtheꢀvalidꢀapplicationꢀnote.
preparedꢀby:ꢀTA
approvedꢀby:ꢀIB
dateꢀofꢀpublication:ꢀ2014-04-28
revision:ꢀ2.0
3
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
ꢀFF650R17IE4V
初步数据
PreliminaryꢀData
模块ꢀ/ꢀModule
绝缘测试电压
Isolationꢀtestꢀvoltage
RMS, f = 50 Hz, t = 1 min.
VISOL
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
4,0
Cu
ꢀ kV
模块基板材料
Materialꢀofꢀmoduleꢀbaseplate
ꢀ
内部绝缘
Internalꢀisolation
基本绝缘ꢀꢀ(classꢀ1,ꢀIECꢀ61140)
basicꢀinsulationꢀ(classꢀ1,ꢀIECꢀ61140)
Al2O3
ꢀ
爬电距离
Creepageꢀdistance
端子-ꢀ散热片ꢀ/ꢀterminalꢀtoꢀheatsink
端子-ꢀ端子ꢀ/ꢀterminalꢀtoꢀterminal
33,0
33,0
ꢀ mm
ꢀ mm
ꢀ
电气间隙
Clearance
端子-ꢀ散热片ꢀ/ꢀterminalꢀtoꢀheatsink
端子-ꢀ端子ꢀ/ꢀterminalꢀtoꢀterminal
19,0
19,0
相对电痕指数
Comperativeꢀtrackingꢀindex
CTI
> 400
min. typ. max.
外壳－散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
每个模块ꢀ/ꢀperꢀmodule
λPasteꢀ=ꢀ1ꢀW/(m·K)ꢀ/ꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)
RthCH
LsCE
RCC'+EE'
Tstg
4,50
18
K/kW
nH
杂散电感,模块
Strayꢀinductanceꢀmodule
模块引线电阻,端子-芯片
Moduleꢀleadꢀresistance,ꢀterminalsꢀ-ꢀchip
TCꢀ=ꢀ25°C,ꢀ每个开关ꢀ/ꢀperꢀswitch
0,30
mΩ
储存温度
Storageꢀtemperature
-40
150 °C
6,00 Nm
模块安装的安装扭距
Mountingꢀtorqueꢀforꢀmodulꢀmounting
螺丝ꢀM5ꢀ根据相应的应用手册进行安装
ScrewꢀM5ꢀꢀ-ꢀMountingꢀaccordingꢀtoꢀvalidꢀapplicationꢀnote
M
3,00
-
端子联接扭距
Terminalꢀconnectionꢀtorque
螺丝ꢀM4ꢀ根据相应的应用手册进行安装
ScrewꢀM4ꢀꢀ-ꢀMountingꢀaccordingꢀtoꢀvalidꢀapplicationꢀnote
螺丝ꢀM8ꢀ根据相应的应用手册进行安装
1,8
8,0
-
-
2,1 Nm
10 Nm
M
G
ScrewꢀM8ꢀꢀ-ꢀMountingꢀaccordingꢀtoꢀvalidꢀapplicationꢀnote
重量
Weight
825
g
preparedꢀby:ꢀTA
approvedꢀby:ꢀIB
dateꢀofꢀpublication:ꢀ2014-04-28
revision:ꢀ2.0
4
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
ꢀFF650R17IE4V
初步数据
PreliminaryꢀData
输出特性ꢀIGBT,ꢀ逆变器ꢀ（典型)
outputꢀcharacteristicꢀIGBT,Inverterꢀ(typical)
输出特性ꢀIGBT,ꢀ逆变器ꢀ（典型)
outputꢀcharacteristicꢀIGBT,Inverterꢀ(typical)
ICꢀ=ꢀfꢀ(VCE
ICꢀ=ꢀfꢀ(VCE
)
)
VGEꢀ=ꢀ15ꢀV
1300
1200
1100
1000
900
Tvjꢀ=ꢀ150°C
1300
1200
1100
1000
900
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9V
VGE = 8V
800
800
700
700
600
600
500
500
400
400
300
300
200
200
100
100
0
0
0,0
0,5
1,0
1,5
2,0
VCE [V]
2,5
3,0
3,5
4,0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
VCE [V]
传输特性ꢀIGBT,ꢀ逆变器ꢀ(典型)
transferꢀcharacteristicꢀIGBT,Inverterꢀ(typical)
ICꢀ=ꢀfꢀ(VGE
开关损耗ꢀIGBT,ꢀ逆变器ꢀ（典型)
switchingꢀlossesꢀIGBT,Inverterꢀ(typical)
Eonꢀ=ꢀfꢀ(IC),ꢀEoffꢀ=ꢀfꢀ(IC)
)
VCEꢀ=ꢀ20ꢀV
1300
1200
1100
1000
900
VGEꢀ=ꢀ±15ꢀV,ꢀRGonꢀ=ꢀ1.8ꢀΩ,ꢀRGoffꢀ=ꢀ2.7ꢀΩ,ꢀVCEꢀ=ꢀ900ꢀV
550
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Eon, Tvj = 150°C
Eon, Tvj = 125°C
Eoff, Tvj = 150°C
Eoff, Tvj = 125°C
500
450
400
350
300
250
200
150
100
50
800
700
600
500
400
300
200
100
0
5
0
6
7
8
9
10
11
12
0
200
400
600
IC [A]
800
1000
1200
VGE [V]
preparedꢀby:ꢀTA
approvedꢀby:ꢀIB
dateꢀofꢀpublication:ꢀ2014-04-28
revision:ꢀ2.0
5
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
ꢀFF650R17IE4V
初步数据
PreliminaryꢀData
开关损耗ꢀIGBT,ꢀ逆变器ꢀ（典型)
switchingꢀlossesꢀIGBT,Inverterꢀ(typical)
Eonꢀ=ꢀfꢀ(RG),ꢀEoffꢀ=ꢀfꢀ(RG)
瞬态热阻抗ꢀIGBT,ꢀ逆变器ꢀ
transientꢀthermalꢀimpedanceꢀIGBT,Inverterꢀ
ZthJCꢀ=ꢀfꢀ(t)
VGEꢀ=ꢀ±15ꢀV,ꢀICꢀ=ꢀ650ꢀA,ꢀVCEꢀ=ꢀ900ꢀV
1000
100
Eon, Tvj = 150°C
ZthJC : IGBT
Eon, Tvj = 125°C
900
Eoff, Tvj = 150°C
Eoff, Tvj = 125°C
800
700
600
500
400
300
200
100
0
10
1
i:
1
2
5,5
3
4
ri[K/kW]: 1,2
τi[s]:
25,5 3,8
0,0008 0,013 0,05 0,6
0,1
0,001
0
2
4
6
8
10
12
14
0,01
0,1
t [s]
1
10
RG [Ω]
反偏安全工作区ꢀIGBT,ꢀ逆变器ꢀ（RBSOA）
reverseꢀbiasꢀsafeꢀoperatingꢀareaꢀIGBT,Inverterꢀ(RBSOA)
ICꢀ=ꢀfꢀ(VCE
正向偏压特性ꢀ二极管,逆变器ꢀ（典型)
forwardꢀcharacteristicꢀofꢀDiode,ꢀInverterꢀ(typical)
IFꢀ=ꢀfꢀ(VF)
)
VGEꢀ=ꢀ±15ꢀV,ꢀRGoffꢀ=ꢀ2.7ꢀΩ,ꢀTvjꢀ=ꢀ150°C
1400
1300
IC, Modul
IC, Chip
Tvj = 25°C
Tvj = 125°C
1200
Tvj = 150°C
1200
1000
800
600
400
200
0
1100
1000
900
800
700
600
500
400
300
200
100
0
0
200 400 600 800 1000 1200 1400 1600 1800
0,0
0,5
1,0
1,5
VF [V]
2,0
2,5
3,0
VCE [V]
preparedꢀby:ꢀTA
approvedꢀby:ꢀIB
dateꢀofꢀpublication:ꢀ2014-04-28
revision:ꢀ2.0
6
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
ꢀFF650R17IE4V
初步数据
PreliminaryꢀData
开关损耗ꢀ二极管,逆变器ꢀ（典型)
switchingꢀlossesꢀDiode,ꢀInverterꢀ(typical)
Erecꢀ=ꢀfꢀ(IF)
开关损耗ꢀ二极管,逆变器ꢀ（典型)
switchingꢀlossesꢀDiode,ꢀInverterꢀ(typical)
Erecꢀ=ꢀfꢀ(RG)
RGonꢀ=ꢀ1.8ꢀΩ,ꢀVCEꢀ=ꢀ900ꢀV
IFꢀ=ꢀ650ꢀA,ꢀVCEꢀ=ꢀ900ꢀV
220
220
Erec, Tvj = 150°C
Erec, Tvj = 150°C
Erec, Tvj = 125°C
Erec, Tvj = 125°C
200
180
160
140
120
100
80
200
180
160
140
120
100
80
60
60
40
40
20
20
0
0
0
200
400
600
IF [A]
800
1000
1200
0
2
4
6
8
10
12
14
RG [Ω]
瞬态热阻抗ꢀ二极管,逆变器ꢀ
安全工作区ꢀ二极管,逆变器ꢀ(SOA)
transientꢀthermalꢀimpedanceꢀDiode,ꢀInverterꢀ
safeꢀoperationꢀareaꢀDiode,ꢀInverterꢀ(SOA)
ZthJCꢀ=ꢀfꢀ(t)
IRꢀ=ꢀf(VR)
Tvjꢀ=ꢀ150°C
1000
ZthJC : Diode
IR, Modul
1400
1200
1000
800
600
400
200
0
100
10
i:
1
2
17
3
45
4
5
ri[K/kW]: 4,5
τi[s]:
0,0008 0,013 0,05 0,6
1
0,001
0,01
0,1
t [s]
1
10
0
200 400 600 800 1000 1200 1400 1600 1800
VR [V]
preparedꢀby:ꢀTA
approvedꢀby:ꢀIB
dateꢀofꢀpublication:ꢀ2014-04-28
revision:ꢀ2.0
7
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
ꢀFF650R17IE4V
初步数据
PreliminaryꢀData
负温度系数热敏电阻ꢀ温度特性
NTC-Thermistor-temperatureꢀcharacteristicꢀ(typical)
Rꢀ=ꢀfꢀ(T)
100000
Rtyp
10000
1000
100
0
20
40
60
80
TC [°C]
100 120 140 160
preparedꢀby:ꢀTA
approvedꢀby:ꢀIB
dateꢀofꢀpublication:ꢀ2014-04-28
revision:ꢀ2.0
8
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
ꢀFF650R17IE4V
初步数据
PreliminaryꢀData
接线图ꢀ/ꢀcircuit_diagram_headline
封装尺寸ꢀ/ꢀpackageꢀoutlines
preparedꢀby:ꢀTA
approvedꢀby:ꢀIB
dateꢀofꢀpublication:ꢀ2014-04-28
revision:ꢀ2.0
9
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
ꢀFF650R17IE4V
初步数据
PreliminaryꢀData
使用条件和条款
ꢀ
使用条件和条款
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note,ꢀthatꢀforꢀanyꢀsuchꢀapplicationsꢀweꢀurgentlyꢀrecommend
-ꢀtoꢀperformꢀjointꢀRiskꢀandꢀQualityꢀAssessments;
-ꢀtheꢀconclusionꢀofꢀQualityꢀAgreements;
-ꢀtoꢀestablishꢀjointꢀmeasuresꢀofꢀanꢀongoingꢀproductꢀsurvey,ꢀandꢀthatꢀweꢀmayꢀmakeꢀdeliveryꢀdependedꢀon
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Ifꢀandꢀtoꢀtheꢀextentꢀnecessary,ꢀpleaseꢀforwardꢀequivalentꢀnoticesꢀtoꢀyourꢀcustomers.
Changesꢀofꢀthisꢀproductꢀdataꢀsheetꢀareꢀreserved.
preparedꢀby:ꢀTA
approvedꢀby:ꢀIB
dateꢀofꢀpublication:ꢀ2014-04-28
revision:ꢀ2.0
10
相关型号：
FF650R17IE4VBOSA1
Insulated Gate Bipolar Transistor, 930A I(C), 1700V V(BR)CES, N-Channel, MODULE-10
INFINEON
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