FS50R12W1T7 [INFINEON]
Insulated Gate Bipolar Transistor,;型号: | FS50R12W1T7 |
厂家: | Infineon |
描述: | Insulated Gate Bipolar Transistor, 栅 |
文件: | 总11页 (文件大小:996K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FS50R12W1T7
EasyPACK™ꢀ模块ꢀ采用第七代沟槽栅/场终止IGBT7和第七代发射极控制二极管ꢀ带有温度检测NTC
EasyPACK™ꢀmoduleꢀwithꢀTRENCHSTOP™IGBT7ꢀandꢀEmitterꢀControlledꢀ7ꢀdiodeꢀandꢀNTC
初步数据ꢀ/ꢀPreliminaryꢀData
VCES = 1200V
IC nom = 50A / ICRM = 100A
潜在应用
PotentialꢀApplications
• UPSꢀsystems
• UPS系统
• 伺服驱动器
• 电机传动
• 空调
• Servoꢀdrives
• Motorꢀdrives
• Airꢀconditioning
• Auxiliaryꢀinverters
• 辅助逆变器
电气特性
ElectricalꢀFeatures
• LowꢀVCEsat
• 低ꢀꢀVCEsat
• 沟槽栅IGBT7
• 过载操作达175°C
• TrenchstopTMꢀIGBT7
• Overloadꢀoperationꢀupꢀtoꢀ175°C
机械特性
MechanicalꢀFeatures
• 2.5ꢀkVꢀ交流ꢀꢀ1分钟ꢀꢀꢀ绝缘
• 低热阻的三氧化二铝ꢀAl2O3ꢀ衬底
• 焊接技术
• 2.5ꢀkVꢀACꢀ1minꢀinsulation
• Al2O3ꢀsubstrateꢀwithꢀlowꢀthermalꢀresistance
• Solderꢀcontactꢀtechnology
• Compactꢀdesign
• 紧凑型设计
• 高功率密度
• Highꢀpowerꢀdensity
ModuleꢀLabelꢀCode
BarcodeꢀCodeꢀ128
ContentꢀofꢀtheꢀCode
ModuleꢀSerialꢀNumber
Digit
1ꢀ-ꢀꢀꢀ5
ModuleꢀMaterialꢀNumber
ProductionꢀOrderꢀNumber
Datecodeꢀ(ProductionꢀYear)
Datecodeꢀ(ProductionꢀWeek)
6ꢀ-ꢀ11
12ꢀ-ꢀ19
20ꢀ-ꢀ21
22ꢀ-ꢀ23
DMXꢀ-ꢀCode
Datasheet
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument
Vꢀ2.0
www.infineon.com
2020-01-29
FS50R12W1T7
初步数据
PreliminaryꢀData
IGBT,ꢀ逆变器ꢀ/ꢀIGBT,Inverter
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues
集电极-发射极电压
Tvj = 25°C
VCES
ICDC
ICRM
VGES
ꢀ
ꢀ
ꢀ
ꢀ
1200
50
ꢀ
ꢀ
ꢀ
ꢀ
V
A
A
V
Collector-emitterꢀvoltage
连续集电极直流电流
ContinuousꢀDCꢀcollectorꢀcurrent
TH = 65°C, Tvj max = 175°C
tP = 1 ms
集电极重复峰值电流
Repetitiveꢀpeakꢀcollectorꢀcurrent
100
栅极-发射极峰值电压
Gate-emitterꢀpeakꢀvoltage
+/-20
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
集电极-发射极饱和电压
Collector-emitterꢀsaturationꢀvoltage
IC = 50 A
VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
1,50 t.b.d.
1,64
1,72
V
V
V
VCE sat
栅极阈值电压
Gateꢀthresholdꢀvoltage
IC = 1,28 mA, VCE = VGE, Tvj = 25°C
VGE = -15 / 15 V, VCE = 600 V
Tvj = 25°C
VGEth
QG
5,15 5,80 6,45
V
µC
Ω
栅极电荷
Gateꢀcharge
0,92
0,0
内部栅极电阻
Internalꢀgateꢀresistor
RGint
Cies
Cres
ICES
IGES
td on
输入电容
Inputꢀcapacitance
f = 100 kHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
f = 100 kHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
11,1
0,039
nF
nF
反向传输电容
Reverseꢀtransferꢀcapacitance
集电极-发射极截止电流
Collector-emitterꢀcut-offꢀcurrent
0,0079 mA
100 nA
栅极-发射极漏电流
Gate-emitterꢀleakageꢀcurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
开通延迟时间(电感负载)
Turn-onꢀdelayꢀtime,ꢀinductiveꢀload
IC = 50 A, VCE = 600 V
VGE = -15 / 15 V
RGon = 4,3 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
0,045
0,047
0,048
µs
µs
µs
上升时间(电感负载)
Riseꢀtime,ꢀinductiveꢀload
IC = 50 A, VCE = 600 V
VGE = -15 / 15 V
RGon = 4,3 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
0,041
0,044
0,048
µs
µs
µs
tr
td off
tf
关断延迟时间(电感负载)
Turn-offꢀdelayꢀtime,ꢀinductiveꢀload
IC = 50 A, VCE = 600 V
VGE = -15 / 15 V
RGoff = 4,3 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
0,27
0,33
0,35
µs
µs
µs
下降时间(电感负载)
Fallꢀtime,ꢀinductiveꢀload
IC = 50 A, VCE = 600 V
VGE = -15 / 15 V
RGoff = 4,3 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
0,11
0,20
0,26
µs
µs
µs
开通损耗能量ꢀ(每脉冲)
Turn-onꢀenergyꢀlossꢀperꢀpulse
IC = 50 A, VCE = 600 V, Lσ = 35 nH
di/dt = 850 A/µs (Tvj = 175°C)
VGE = -15 / 15 V, RGon = 4,3 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
4,44
6,05
7,11
mJ
mJ
mJ
Eon
Eoff
关断损耗能量ꢀ(每脉冲)
Turn-offꢀenergyꢀlossꢀperꢀpulse
IC = 50 A, VCE = 600 V, Lσ = 35 nH
du/dt = 3000 V/µs (Tvj = 175°C)
VGE = -15 / 15 V, RGoff = 4,3 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
3,35
5,20
6,45
mJ
mJ
mJ
短路数据
SCꢀdata
VGE ≤ 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
tP ≤ 8 µs, Tvj = 150°C
tP ≤ 7 µs, Tvj = 175°C
190
180
A
A
ISC
结-散热器热阻
Thermalꢀresistance,ꢀjunctionꢀtoꢀheatsink
每个ꢀIGBTꢀ/ꢀperꢀIGBT
RthJH
Tvj op
1,05
K/W
在开关状态下温度
Temperatureꢀunderꢀswitchingꢀconditions
-40
175
°C
Datasheet
2
Vꢀ2.0
2020-01-29
FS50R12W1T7
初步数据
PreliminaryꢀData
二极管,逆变器ꢀ/ꢀDiode,ꢀInverter
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues
反向重复峰值电压
Tvj = 25°C
VRRM
IF
IFRM
I²t
ꢀ
ꢀ
ꢀ
ꢀ
1200
50
ꢀ
ꢀ
ꢀ
ꢀ
V
A
A
Repetitiveꢀpeakꢀreverseꢀvoltage
连续正向直流电流
ContinuousꢀDCꢀforwardꢀcurrent
正向重复峰值电流
Repetitiveꢀpeakꢀforwardꢀcurrent
tP = 1 ms
100
I2t-值
I²tꢀ-ꢀvalue
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 175°C
300
250
A²s
A²s
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
正向电压
Forwardꢀvoltage
IF = 50 A, VGE = 0 V
IF = 50 A, VGE = 0 V
IF = 50 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
1,72 t.b.d.
1,59
1,52
V
V
V
VF
IRM
Qr
反向恢复峰值电流
Peakꢀreverseꢀrecoveryꢀcurrent
IF = 50 A, - diF/dt = 850 A/µs (Tvj=175°C)
VR = 600 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
29,4
38,6
41,8
A
A
A
恢复电荷
Recoveredꢀcharge
IF = 50 A, - diF/dt = 850 A/µs (Tvj=175°C)
VR = 600 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
3,38
6,53
8,84
µC
µC
µC
反向恢复损耗(每脉冲)
Reverseꢀrecoveryꢀenergy
IF = 50 A, - diF/dt = 850 A/µs (Tvj=175°C)
VR = 600 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
1,36
2,59
3,47
mJ
mJ
mJ
Erec
结-散热器热阻
Thermalꢀresistance,ꢀjunctionꢀtoꢀheatsink
每个二极管ꢀ/ꢀperꢀdiode
RthJH
Tvj op
1,60
K/W
°C
在开关状态下温度
Temperatureꢀunderꢀswitchingꢀconditions
-40
175
负温度系数热敏电阻ꢀ/ꢀNTC-Thermistor
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
5,00
额定电阻值
Ratedꢀresistance
TNTC = 25°C
R25
∆R/R
P25
kΩ
R100ꢀꢀ偏差
DeviationꢀofꢀR100
TNTC = 100°C, R100 = 493 Ω
-5
5
%
耗散功率
Powerꢀdissipation
TNTC = 25°C
20,0 mW
B-值
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/50
B25/80
B25/100
3375
3411
3433
K
K
K
B-值
B-value
B-值
B-value
根据应用手册标定
Specificationꢀaccordingꢀtoꢀtheꢀvalidꢀapplicationꢀnote.
Datasheet
3
Vꢀ2.0
2020-01-29
FS50R12W1T7
初步数据
PreliminaryꢀData
模块ꢀ/ꢀModule
绝缘测试电压
Isolationꢀtestꢀvoltage
RMS, f = 50 Hz, t = 1 min.
VISOL
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
2,5
ꢀ kV
ꢀ
内部绝缘
Internalꢀisolation
基本绝缘ꢀꢀ(classꢀ1,ꢀIECꢀ61140)
basicꢀinsulationꢀ(classꢀ1,ꢀIECꢀ61140)
Al2O3
爬电距离
Creepageꢀdistance
端子至散热器ꢀ/ꢀterminalꢀtoꢀheatsink
端子至端子ꢀ/ꢀterminalꢀtoꢀterminal
11,5
6,3
ꢀ mm
ꢀ mm
ꢀ
电气间隙
Clearance
端子至散热器ꢀ/ꢀterminalꢀtoꢀheatsink
端子至端子ꢀ/ꢀterminalꢀtoꢀterminal
10,0
5,0
相对电痕指数
Comperativeꢀtrackingꢀindex
CTI
RTI
> 200
相对温度指数ꢀ(电)
RTIꢀElec.
住房
housing
140
ꢀ °C
min. typ. max.
杂散电感,模块
Strayꢀinductanceꢀmodule
LsCE
Tstg
F
30
nH
°C
N
储存温度
Storageꢀtemperature
-40
40
125
80
Anpresskraft für mech. Bef. pro Feder
mountig force per clamp
-
重量
Weight
G
24
g
Der Strom im Dauerbetrieb ist auf 30 A effektiv pro Anschlusspin begrenzt.
The current under continuous operation is limited to 30 A rms per connector pin.
Tvj op > 150°C ist im Überlastbetrieb zulässig. Detaillierte Angaben sind AN 2018-14 zu entnehmen.
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.
Datasheet
4
Vꢀ2.0
2020-01-29
FS50R12W1T7
初步数据
PreliminaryꢀData
输出特性ꢀIGBT,ꢀ逆变器ꢀ(典型)
outputꢀcharacteristicꢀIGBT,Inverterꢀ(typical)
输出特性ꢀIGBT,ꢀ逆变器ꢀ(典型)
outputꢀcharacteristicꢀIGBT,Inverterꢀ(typical)
ICꢀ=ꢀfꢀ(VCE
ICꢀ=ꢀfꢀ(VCE
)
)
VGEꢀ=ꢀ15ꢀV
Tvjꢀ=ꢀ175°C
100
100
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE
= 9V
75
50
25
75
50
25
0
0
0,0
0,5
1,0
1,5
VCE [V]
2,0
2,5
3,0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
VCE [V]
传输特性ꢀIGBT,ꢀ逆变器ꢀ(典型)
transferꢀcharacteristicꢀIGBT,Inverterꢀ(typical)
ICꢀ=ꢀfꢀ(VGE
开关损耗ꢀIGBT,ꢀ逆变器ꢀ(典型)
switchingꢀlossesꢀIGBT,Inverterꢀ(typical)
Eonꢀ=ꢀfꢀ(IC),ꢀEoffꢀ=ꢀfꢀ(IC)
)
VCEꢀ=ꢀ20ꢀV
VGEꢀ=ꢀ±15ꢀV,ꢀRGonꢀ=ꢀ4.3ꢀΩ,ꢀRGoffꢀ=ꢀ4.3ꢀΩ,ꢀVCEꢀ=ꢀ600ꢀV
100
30
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Eon, Tvj = 125°C
28
26
24
22
20
18
16
14
12
10
8
Eon, Tvj = 175°C
Eoff, Tvj = 125°C
Eoff, Tvj = 175°C
75
50
25
6
4
2
0
5
0
6
7
8
9
10
11
12
13
0
10 20 30 40 50 60 70 80 90 100
VGE [V]
IC [A]
Datasheet
5
Vꢀ2.0
2020-01-29
FS50R12W1T7
初步数据
PreliminaryꢀData
开关损耗ꢀIGBT,ꢀ逆变器ꢀ(典型)
switchingꢀlossesꢀIGBT,Inverterꢀ(typical)
Eonꢀ=ꢀfꢀ(RG),ꢀEoffꢀ=ꢀfꢀ(RG)
???ꢀIGBT,ꢀ逆变器ꢀ(典型)
switchingꢀtimesꢀIGBT,Inverterꢀ(typical)
tdonꢀ=ꢀfꢀ(IC),ꢀtrꢀ=ꢀfꢀ(IC),ꢀtdoffꢀ=ꢀfꢀ(IC),ꢀtfꢀ=ꢀfꢀ(IC)
VGEꢀ=ꢀ±15ꢀV,ꢀICꢀ=ꢀ50ꢀA,ꢀVCEꢀ=ꢀ600ꢀV
VGEꢀ=ꢀ±15ꢀV,ꢀRGonꢀ=ꢀ4.3ꢀΩ,ꢀRGoffꢀ=ꢀ4.3ꢀΩ,ꢀVCEꢀ=ꢀ600ꢀV,ꢀTvjꢀ=ꢀ175°C
24
10
Eon, Tvj = 125°C
Eon, Tvj = 175°C
tdon
tr
22
Eoff, Tvj = 125°C
Eoff, Tvj = 175°C
tdoff
tf
20
18
16
14
12
10
8
1
0,1
6
0,01
0,001
4
2
0
0
10
20
30
40
50
0
10 20 30 40 50 60 70 80 90 100
RG [Ω]
IC [A]
???ꢀIGBT,ꢀ逆变器ꢀ(典型)
switchingꢀtimesꢀIGBT,Inverterꢀ(typical)
tdonꢀ=ꢀfꢀ(RG),ꢀtrꢀ=ꢀfꢀ(RG),ꢀtdoffꢀ=ꢀfꢀ(RG),ꢀtfꢀ=ꢀfꢀ(RG)
VGEꢀ=ꢀ±15ꢀV,ꢀICꢀ=ꢀ50ꢀA,ꢀVCEꢀ=ꢀ600ꢀV,ꢀTvjꢀ=ꢀ175°C
dv/dtꢀIGBT,ꢀ逆变器ꢀ(典型)
dv/dtꢀIGBT,Inverterꢀ(typical)
dv/dtꢀ=ꢀf(RG)
VGEꢀ=ꢀ±15ꢀV,ꢀICꢀ=ꢀ50ꢀA,ꢀVCEꢀ=ꢀ600ꢀV,ꢀTvjꢀ=ꢀ25°C
10
12
tdon
tr
tdoff
tf
dv/dt-on at 1/10 × IC
dv/dt-off at IC
11
10
9
8
7
6
5
4
3
2
1
0
1
0,1
0,01
0
10
20
30
40
50
0
10
20
30
40
50
RG [Ω]
RG [Ω]
Datasheet
6
Vꢀ2.0
2020-01-29
FS50R12W1T7
初步数据
PreliminaryꢀData
瞬态热阻抗ꢀIGBT,ꢀ逆变器ꢀ
transientꢀthermalꢀimpedanceꢀIGBT,Inverterꢀ
ZthJHꢀ=ꢀfꢀ(t)
反偏安全工作区ꢀIGBT,ꢀ逆变器ꢀ(RBSOA)
reverseꢀbiasꢀsafeꢀoperatingꢀareaꢀIGBT,Inverterꢀ(RBSOA)
ICꢀ=ꢀfꢀ(VCE
)
VGEꢀ=ꢀ±15ꢀV,ꢀRGoffꢀ=ꢀ4.3ꢀΩ,ꢀTvjꢀ=ꢀ175°C
10
120
ZthJH : IGBT
IC, Modul
IC, Chip
100
80
60
40
20
0
1
0,1
i:
ri[K/W]: 0,03
τi[s]:
1
2
3
4
0,098 0,28
0,642
0,000607 0,01 0,0654 0,206
0,01
0,001
0,01
0,1
t [s]
1
10
0
200
400
600
800
1000 1200 1400
VCE [V]
电容特性ꢀIGBT,ꢀ逆变器ꢀ(典型)
capacityꢀcharacteristicꢀIGBT,Inverterꢀ(typical)
Cꢀ=ꢀf(VCE
栅极电荷特性ꢀIGBT,ꢀ逆变器ꢀ(典型)
gateꢀchargeꢀcharacteristicꢀIGBT,Inverterꢀ(typical)
VGEꢀ=ꢀf(QG)
)
VGEꢀ=ꢀ0ꢀV,ꢀTvjꢀ=ꢀ25°C,ꢀfꢀ=ꢀ100kHz
ICꢀ=ꢀ50ꢀA,ꢀTvjꢀ=ꢀ25°C
1000
15
Cies
Coes
Cres
VCE = 600 V
100
10
10
5
1
0
0,1
-5
0,01
0,001
-10
-15
0
10 20 30 40 50 60 70 80 90 100
0,0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 1,0
VCE [V]
QG [µC]
Datasheet
7
Vꢀ2.0
2020-01-29
FS50R12W1T7
初步数据
PreliminaryꢀData
正向偏压特性ꢀ二极管,逆变器ꢀ(典型)
forwardꢀcharacteristicꢀofꢀDiode,ꢀInverterꢀ(typical)
IFꢀ=ꢀfꢀ(VF)
开关损耗ꢀ二极管,逆变器ꢀ(典型)
switchingꢀlossesꢀDiode,ꢀInverterꢀ(typical)
Erecꢀ=ꢀfꢀ(IF)
RGonꢀ=ꢀ4.3ꢀΩ,ꢀVCEꢀ=ꢀ600ꢀV
100
4,0
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Erec, Tvj = 125°C
Erec, Tvj = 175°C
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
75
50
25
0
0,00
0,50
1,00
1,50
2,00
2,50
0
10 20 30 40 50 60 70 80 90 100
IF [A]
VF [V]
开关损耗ꢀ二极管,逆变器ꢀ(典型)
瞬态热阻抗ꢀ二极管,逆变器ꢀ
switchingꢀlossesꢀDiode,ꢀInverterꢀ(typical)
Erecꢀ=ꢀfꢀ(RG)
transientꢀthermalꢀimpedanceꢀDiode,ꢀInverterꢀ
ZthJHꢀꢀ=ꢀfꢀ(t)
IFꢀ=ꢀ50ꢀA,ꢀVCEꢀ=ꢀ600ꢀV
4,0
10
Erec, Tvj = 125°C
Erec, Tvj = 175°C
ZthJH : Diode
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
1
0,1
i:
ri[K/W]: 0,073
τi[s]:
1
2
0,24
3
4
0,797 0,49
0,00069 0,0122 0,0808 0,251
0,01
0,001
0
10
20
30
40
50
0,01
0,1
t [s]
1
10
RG [Ω]
Datasheet
8
Vꢀ2.0
2020-01-29
FS50R12W1T7
初步数据
PreliminaryꢀData
负温度系数热敏电阻ꢀ温度特性
NTC-Thermistor-temperatureꢀcharacteristicꢀ(typical)
Rꢀ=ꢀfꢀ(TNTC
)
100000
Rtyp
10000
1000
100
10
0
25
50
75
100
125
150
175
TNTC [°C]
Datasheet
9
Vꢀ2.0
2020-01-29
FS50R12W1T7
初步数据
PreliminaryꢀData
接线图ꢀ/ꢀCircuitꢀdiagram
J
封装尺寸ꢀ/ꢀPackageꢀoutlines
Infineon
Datasheet
10
Vꢀ2.0
2020-01-29
Trademarks
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.
ꢀ
ꢀ
ꢀ
Editionꢀ2020-01-29
©ꢀ2020ꢀInfineonꢀTechnologiesꢀAG.
AllꢀRightsꢀReserved.
Publishedꢀby
InfineonꢀTechnologiesꢀAG
81726ꢀMünchen,ꢀGermany
Doꢀyouꢀhaveꢀaꢀquestionꢀaboutꢀthisꢀdocument?
Email:ꢀerratum@infineon.com
ꢀ
ꢀ
重要提示
本文档所提供的任何信息绝不应当被视为针对任何条件或者品质而做出的保证(质量保证)。英飞凌对于本文档中所提及的任何事例、
提示或者任何特定数值及/或任何关于产品应用方面的信息均在此明确声明其不承担任何保证或者责任,包括但不限于其不侵犯任何
第三方知识产权的保证均在此排除。
此外,本文档所提供的任何信息均取决于客户履行本文档所载明的义务和客户遵守适用于客户产品以及与客户对于英飞凌产品的应用
所相关的任何法律要求、规范和标准。
本文档所含的数据仅供经过专业技术培训的人员使用。客户自身的技术部门有义务对于产品是否适宜于其预期的应用和针对该等应用
而言本文档中所提供的信息是否充分自行予以评估。
如需产品、技术、交付条款和条件以及价格等进一步信息,请向离您最近的英飞凌科技办公室接洽(www.infineon.com)。
警告事项
由于技术所需产品可能含有危险物质。如需了解该等物质的类型,请向离您最近的英飞凌科技办公室接洽。
除非由经英飞凌科技授权代表签署的书面文件中做出另行明确批准的情况外,英飞凌科技的产品不应当被用于任何一项一旦产品失效
或者产品使用的后果可被合理地预料到可能导致人身伤害的任何应用领域。
ꢀ
ꢀ
ꢀ
IMPORTANTꢀNOTICE
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics
(“Beschaffenheitsgarantie”).ꢀWithꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀthe
applicationꢀofꢀtheꢀproduct,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithout
limitationꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthisꢀdocumentꢀandꢀany
applicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀtheꢀproductꢀofꢀInfineonꢀTechnologies
inꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’sꢀtechnical
departmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproductꢀinformationꢀgivenꢀin
thisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Forꢀfurtherꢀinformationꢀonꢀtheꢀproduct,ꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
Technologiesꢀofficeꢀ(www.infineon.com).
WARNINGS
Dueꢀtoꢀtechnicalꢀrequirementsꢀproductsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestionꢀpleaseꢀcontactꢀyour
nearestꢀInfineonꢀTechnologiesꢀoffice.
ExceptꢀasꢀotherwiseꢀexplicitlyꢀapprovedꢀbyꢀInfineonꢀTechnologiesꢀinꢀaꢀwrittenꢀdocumentꢀsignedꢀbyꢀauthorizedꢀrepresentativesꢀofꢀInfineon
Technologies,ꢀInfineonꢀTechnologies’ꢀproductsꢀmayꢀnotꢀbeꢀusedꢀinꢀanyꢀapplicationsꢀwhereꢀaꢀfailureꢀofꢀtheꢀproductꢀorꢀanyꢀconsequencesꢀof
theꢀuseꢀthereofꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀresultꢀinꢀpersonalꢀinjury.
相关型号:
FS50R12W2T4
EasyPACK module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
INFINEON
FS50R12W2T4B11BOMA1
Insulated Gate Bipolar Transistor, 83A I(C), 1200V V(BR)CES, N-Channel, MODULE-33
INFINEON
FS50R12W2T4BOMA1
Insulated Gate Bipolar Transistor, 83A I(C), 1200V V(BR)CES, N-Channel, MODULE-33
INFINEON
FS50R12W2T4_B11
EasyPACK module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC
INFINEON
FS50R17KE3_B17
Insulated Gate Bipolar Transistor, 82A I(C), 1700V V(BR)CES, N-Channel, MODULE-19
INFINEON
©2020 ICPDF网 联系我们和版权申明