HFA40HF120C [INFINEON]
Ultrafast, Soft Recovery Diode; 超快，软恢复二极管
| 型号： | HFA40HF120C |
| 厂家： | 
Infineon |
| 描述： | Ultrafast, Soft Recovery Diode |
| 文件： | 总5页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-91797
HFA40HF120C
Ultrafast, Soft Recovery Diode
VR = 1200V
PRELIMINARY
HEXFREDTM
(ISOLATED BASE)
Features
• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of Recovery Parameters
VF = 4.46V
Qrr = 370nC
• Hermetic
• Surface Mount
di(rec)M/dt = 380A/µs
ANODE COMMON ANODE
CATHODE
Description
HEXFREDTM diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems.
An extensive characterization of the recovery behavior
for different values of current, temperature and di/dt
simplifies the calculations of losses in the operating
conditions. The softness of the recovery eliminates the
need for a snubber in most applications. These devices
are ideally suited for power converters, motors drives and
other applications where switching losses are significant
portion of the total losses.
SMD-1
Absolute Maximum Ratings (per Leg)
Parameter
D.C. Reverse Voltage
Max.
1200
Units
V
VR
IF @ TC = 100°C
Continuous Forward Current
15
A
IFSM @ TC = 25°C Single Pulse Forward Current
130
PD @ TC = 25°C
Maximum Power Dissipation
Operating Junction and
63
W
TJ
-55 to +150
°C
TSTG
Storage Temperature Range
Thermal - Mechanical Characteristics
Parameter
Junction-to-Case, Single Leg Conducting
Weight
Typ.
—
Max.
2.0
Units
RθJC
°C/W
g
2.6
—
Note: D.C. = 50% rect. wave
1/2 sine wave, 60 Hz , P.W. = 8.33 ms
www.irf.com
1
8/20/98
HFA40HF120C
Electrical Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
VBR
VFM
Cathode Anode Breakdown Voltage
Max Forward Voltage
1200
—
—
—
—
—
—
—
10
2.8
—
3.3
4.4
2.8
10
V
IR = 250µA
IF = 7.0A
IF = 15A
—
V
See Fig. 1
—
IF = 7.0A, TJ = 125°C
VR = VR Rated
IRM
Max Reverse Leakage Current
—
µA
See Fig. 2
See Fig. 3
—
1.0
15
mA TJ = 125°C, VR = 480V
pF VR = 200V
CT
LS
Junction Capacitance
Series Inductance
—
—
—
nH Measured from center of bond pad to
end of anode bonding wire
Dynamic Recovery Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
trr1
Reverse Recovery Time
—
—
—
—
—
—
—
—
58 100
110 165
5.4 8.1
7.2 10.8
185 370
395 590
255 380
160 240
ns TJ = 25°C See Fig.
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C
trr2
5
IF = 7A
IRRM1
IRRM2
Qrr1
Qrr2
Peak Recovery Current
A
6
VR = 200V
Reverse Recovery Charge
nC
7
dif/dt = 200A/µs
di(rec)M/dt1 Peak Rate of Fall of Recovery Current
di(rec)M/dt2 During tb
A/µs
8
Case Outline and Dimensions — SMD-1
Lead Assignments :
2 - Common Cathode
1, 3 - Anode
IR Case Style SMD-1
Dimensionsinmillimetersand(inches)
2
www.irf.com
HFA40HF120C
1000
100
10
100
10
1
T
= 150°C
J
T
= 125°C
J
T
= 150°C
= 125°C
J
1
T
J
0.1
T
=
25°C
J
T
=
25°C
J
0.01
0.001
0
300
600
900
1200
Reverse Voltage - V
(V)
R
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
A
100
T
= 25°C
J
10
1.0
3.0
5.0
7.0
Forward Voltage Drop - V
(V)
FM
Fig. 1 - Maximum Forward Voltage Drop
1
1
10
100
1000
vs. Instantaneous Forward Current
Reverse Voltage - V (V)
R
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
10
D = 0.50
1
0.20
0.10
0.05
P
DM
0.1
0.02
0.01
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t
/ t
1 2
2. Peak T = P
x
Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
www.irf.com
3
HFA40HF120C
150
100
10
1
I
= 14A
= 7A
F
I
I
F
F
= 3.5A
120
90
60
30
0
I
= 14A
F
F
F
I
I
= 7A
= 3.5A
VR = 2 0 0 V
TJ = 1 2 5 °C
TJ = 2 5 °C
VR = 200V
TJ = 125°C
TJ = 25°C
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 5 - Typical Reverse Recovery vs. dif/dt
Fig. 6 - Typical Recovery Current vs. dif/dt
1000
10000
I
= 3.5A
F
1000
100
10
100
I
I
I
= 14A
= 7A
F
F
F
I
= 7A
F
= 3.5A
I
= 14A
F
VR = 2 0 0V
TJ = 1 2 5 °C
TJ = 2 5 °C
VR = 2 0 0 V
TJ = 1 2 5 °C
TJ = 2 5 °C
10
100
100
1000
1000
di /dt - (A/µs)
di /dt - (A/µs)
f
f
Fig. 7 - Typical Stored Charge vs. dif/dt
Fig. 8 - Typical di(rec)M/dt vs. dif/dt
4
www.irf.com
HFA40HF120C
3
t
rr
I
F
t
t
a
b
0
REVERSE RECO VERY CIRCUIT
4
Q
rr
V
= 200V
2
R
I
0.5
I
RRM
RRM
5
di(rec)M /dt
I
RRM
0.01
Ω
0.75
L = 70µH
1
di /dt
f
D .U .T.
4. Qrr - Area under curve defined by trr
1. dif/dt - Rate of change of current
through zero crossing
D
IRFP250
and IRRM
dif/dt
trr X IRRM
AD JUST
G
Qrr
=
2. IRRM - Peak reverse recovery current
2
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
S
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and
Fig. 9 - Reverse Recovery Parameter Test
Definitions
Circuit
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/98
www.irf.com
5
相关型号：
HFA40HF120PBF
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 11A, 1200V V(RRM), Silicon, HERMETIC SEALED, SMD-1, 3 PIN
VISHAY
HFA40HF60
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 22A, 600V V(RRM), Silicon, HERMETIC SEALED, SMD-1, 3 PIN
VISHAY
HFA40HF60CSCV
600V 30A Hi-Rel Ultra-Fast Common Cathode Diode in a SMD-1 package. - Screening Level TXV
INFINEON
HFA40HF60CSCX
600V 30A Hi-Rel Ultra-Fast Common Cathode Diode in a SMD-1 package. - Screening Level TX
INFINEON
HFA40HF60PBF
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 22A, 600V V(RRM), Silicon, HERMETIC SEALED, SMD-1, 3 PIN
VISHAY
HFA45HC120CDPBF
Rectifier Diode, Avalanche, 1 Phase, 2 Element, 28A, Silicon, HERMETIC SEALED PACKAGE-3
INFINEON
©2020 ICPDF网 联系我们和版权申明