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IHW40N60RFKSA1 [INFINEON]

Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AD, GREEN, PLASTIC, TO-247, 3 PIN;
IHW40N60RFKSA1
型号： IHW40N60RFKSA1
厂家： Infineon    Infineon
描述：

Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AD, GREEN, PLASTIC, TO-247, 3 PIN

局域网 栅 功率控制 晶体管
文件： 总15页 (文件大小：2008K)
中文：  中文翻译
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IGBT  
ReverseꢀconductingꢀIGBT  
IHW40N60R  
ResonantꢀSwitchingꢀSeries  
Dataꢀsheet  
IndustrialꢀPowerꢀControl  
IHW40N60R  
ResonantꢀSwitchingꢀSeries  
ReverseꢀconductingꢀIGBT  
ꢀ
C
Features:  
•ꢀPowerfulꢀmonolithicꢀbodyꢀdiodeꢀwithꢀlowꢀforwardꢀvoltage  
designedꢀforꢀsoftꢀcommutationꢀonly  
•ꢀTRENCHSTOPTMꢀtechnologyꢀapplicationsꢀoffers:  
-ꢀveryꢀtightꢀparameterꢀdistribution  
-ꢀhighꢀruggedness,ꢀtemperatureꢀstableꢀbehavior  
-ꢀlowꢀVCEsat  
G
E
-ꢀeasyꢀparallelꢀswitchingꢀcapabilityꢀdueꢀtoꢀpositive  
temperatureꢀcoefficientꢀinꢀVCEsat  
•ꢀLowꢀEMI  
•ꢀQualifiedꢀaccordingꢀtoꢀJESD-022ꢀforꢀtargetꢀapplications  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:  
http://www.infineon.com/igbt/  
Applications:  
G
C
E
•ꢀInductiveꢀcooking  
•ꢀInverterizedꢀmicrowaveꢀovens  
•ꢀResonantꢀconverters  
•ꢀSoftꢀswitchingꢀapplications  
KeyꢀPerformanceꢀandꢀPackageꢀParameters  
Type  
VCE  
IC  
VCEsat,ꢀTvj=25°C Tvjmax  
1.65V 175°C  
Marking  
Package  
IHW40N60R  
600V  
40A  
H40R60  
PG-TO247-3  
2
Rev.ꢀ2.6,ꢀꢀ2015-01-26  
IHW40N60R  
ResonantꢀSwitchingꢀSeries  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13  
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15  
3
Rev.ꢀ2.6,ꢀꢀ2015-01-26  
IHW40N60R  
ResonantꢀSwitchingꢀSeries  
MaximumꢀRatings  
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.  
Parameter  
Symbol  
Value  
Unit  
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C  
VCE  
600  
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax  
TCꢀ=ꢀ25°C  
TCꢀ=ꢀ100°C  
IC  
80.0  
40.0  
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax  
ICpuls  
120.0  
120.0  
A
A
Turn off safe operating area  
VCEꢀ≤ꢀ600V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs  
-
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax  
TCꢀ=ꢀ25°C  
TCꢀ=ꢀ100°C  
IF  
80.0  
40.0  
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax  
IFpuls  
VGE  
120.0  
±20  
A
V
Gate-emitter voltage  
PowerꢀdissipationꢀTCꢀ=ꢀ25°C  
PowerꢀdissipationꢀTCꢀ=ꢀ100°C  
305.0  
152.5  
Ptot  
W
Operating junction temperature  
Storage temperature  
Tvj  
-40...+175  
-55...+150  
°C  
°C  
Tstg  
Soldering temperature,  
wave soldering 1.6mm (0.063in.) from case for 10s  
°C  
260  
0.6  
Mounting torque, M3 screw  
Maximum of mounting processes: 3  
M
Nm  
ThermalꢀResistance  
Parameter  
Symbol Conditions  
Max.ꢀValue  
Unit  
Characteristic  
IGBT thermal resistance,  
junction - case  
Rth(j-c)  
Rth(j-c)  
Rth(j-a)  
0.49  
0.49  
40  
K/W  
K/W  
K/W  
Diode thermal resistance,  
junction - case  
Thermal resistance  
junction - ambient  
4
Rev.ꢀ2.6,ꢀꢀ2015-01-26  
IHW40N60R  
ResonantꢀSwitchingꢀSeries  
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Value  
Unit  
min. typ. max.  
Parameter  
Symbol Conditions  
StaticꢀCharacteristic  
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.50mA  
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ40.0A  
600  
-
-
V
V
Collector-emitter saturation voltage VCEsat  
Tvjꢀ=ꢀ25°C  
-
-
1.65 2.05  
2.10  
Tvjꢀ=ꢀ175°C  
-
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ40.0A  
Tvjꢀ=ꢀ25°C  
Tvjꢀ=ꢀ175°C  
Diode forward voltage  
VF  
-
-
1.65 2.05  
V
V
1.90  
-
Gate-emitter threshold voltage  
VGE(th)  
ICꢀ=ꢀ0.58mA,ꢀVCEꢀ=ꢀVGE  
4.1  
4.9  
5.7  
VCEꢀ=ꢀ600V,ꢀVGEꢀ=ꢀ0V  
Tvjꢀ=ꢀ25°C  
Tvjꢀ=ꢀ175°C  
Zero gate voltage collector current ICES  
-
-
-
-
40.0 µA  
3000.0  
Gate-emitter leakage current  
Transconductance  
IGES  
gfs  
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V  
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ40.0A  
-
-
-
100  
-
nA  
S
19.0  
none  
Integrated gate resistor  
rG  
Ω
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
DynamicꢀCharacteristic  
Input capacitance  
Cies  
-
-
-
2370  
80  
-
-
-
Output capacitance  
Coes  
Cres  
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz  
pF  
Reverse transfer capacitance  
65  
VCCꢀ=ꢀ480V,ꢀICꢀ=ꢀ40.0A,  
VGEꢀ=ꢀ15V  
Gate charge  
QG  
LE  
-
-
223.0  
13.0  
-
-
nC  
nH  
Internal emitter inductance  
measured 5mm (0.197 in.) from  
case  
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C  
Turn-off delay time  
Fall time  
td(off)  
tf  
-
-
-
193  
24  
-
-
-
ns  
ns  
Tvjꢀ=ꢀ25°C,  
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ40.0A,  
VGEꢀ=ꢀ0.0/15.0V,  
RG(on)ꢀ=ꢀ5.6Ω,ꢀRG(off)ꢀ=ꢀ5.6Ω,  
Lσꢀ=ꢀ90nH,ꢀCσꢀ=ꢀ67pF  
Lσ,ꢀCσꢀfromꢀFig.ꢀE  
Turn-off energy  
Eoff  
0.75  
mJ  
Energy losses include “tail” and  
diode reverse recovery.  
5
Rev.ꢀ2.6,ꢀꢀ2015-01-26  
IHW40N60R  
ResonantꢀSwitchingꢀSeries  
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  
Value  
Unit  
min. typ. max.  
Parameter  
Symbol Conditions  
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C  
Turn-off delay time  
Fall time  
td(off)  
tf  
-
-
-
227  
44  
-
-
-
ns  
ns  
Tvjꢀ=ꢀ175°C,  
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ40.0A,  
VGEꢀ=ꢀ0.0/15.0V,  
RG(on)ꢀ=ꢀ5.6Ω,ꢀRG(off)ꢀ=ꢀ5.6Ω,  
Lσꢀ=ꢀ90nH,ꢀCσꢀ=ꢀ67pF  
Lσ,ꢀCσꢀfromꢀFig.ꢀE  
Turn-off energy  
Eoff  
1.22  
mJ  
Energy losses include “tail” and  
diode reverse recovery.  
6
Rev.ꢀ2.6,ꢀꢀ2015-01-26  
IHW40N60R  
ResonantꢀSwitchingꢀSeries  
140  
120  
100  
80  
100  
tp=1µs  
5µs  
TC=80°  
20µs  
TC=110°  
10  
100µs  
1ms  
60  
10ms  
DC  
1
40  
20  
0
0.1  
10  
100  
1000  
1E+4  
1E+5  
1E+6  
1
10  
100  
1000  
f,ꢀSWITCHINGꢀFREQUENCYꢀ[Hz]  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
Figure 1. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀswitching  
Figure 2. Forwardꢀbiasꢀsafeꢀoperatingꢀarea  
(D=0,ꢀTC=25°C,ꢀTj≤175°C;ꢀVGE=15V)  
frequency  
(Tj≤175°C,ꢀD=0.5,ꢀVCE=400V,ꢀVGE=0/15V,  
RG=5.6Ω)  
350  
300  
250  
200  
150  
100  
50  
80  
70  
60  
50  
40  
30  
20  
10  
0
0
25  
50  
75  
100  
125  
150  
175  
25  
50  
75  
100  
125  
150  
175  
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]  
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]  
Figure 3. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase  
Figure 4. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase  
temperature  
temperature  
(Tj≤175°C)  
(VGE≥15V,ꢀTj≤175°C)  
7
Rev.ꢀ2.6,ꢀꢀ2015-01-26  
IHW40N60R  
ResonantꢀSwitchingꢀSeries  
120  
VGE=20V  
17V  
15V  
13V  
11V  
9V  
VGE=20V  
17V  
120  
100  
80  
60  
40  
20  
0
100  
15V  
13V  
11V  
9V  
80  
60  
40  
20  
0
7V  
7V  
0
1
2
3
4
5
6
0
1
2
3
4
5
6
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
Figure 5. Typicalꢀoutputꢀcharacteristic  
(Tj=25°C)  
Figure 6. Typicalꢀoutputꢀcharacteristic  
(Tj=175°C)  
120  
3.5  
Tj=25°C  
Tj=175°C  
IC=20A  
IC=40A  
IC=80A  
100  
80  
60  
40  
20  
0
3.0  
2.5  
2.0  
1.5  
1.0  
0
2
4
6
8
10  
12  
0
25  
50  
75  
100  
125  
150  
175  
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]  
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 7. Typicalꢀtransferꢀcharacteristic  
(VCE=20V)  
Figure 8. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas  
aꢀfunctionꢀofꢀjunctionꢀtemperature  
(VGE=15V)  
8
Rev.ꢀ2.6,ꢀꢀ2015-01-26  
IHW40N60R  
ResonantꢀSwitchingꢀSeries  
1000  
100  
10  
td(off)  
tf  
td(off)  
tf  
1000  
100  
10  
0
20  
40  
60  
80  
0
10  
20  
30  
40  
50  
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]  
RG,ꢀGATEꢀRESISTANCEꢀ[Ω]  
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  
collectorꢀcurrent  
Figure 10. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate  
resistance  
(inductiveꢀload,ꢀTj=175°C,ꢀVCE=400V,  
VGE=0/15V,ꢀRG(on)=5.6Ω,ꢀRG(off)=5.6Ω,  
dynamic test circuit in Figure E)  
(inductiveꢀload,ꢀTj=175°C,ꢀVCE=400V,  
VGE=0/15V,ꢀIC=40A,ꢀdynamicꢀtestꢀcircuitꢀin  
Figure E)  
1000  
7
td(off)  
tf  
typ.  
min.  
max.  
6
5
4
3
2
1
100  
10  
25  
50  
75  
100  
125  
150  
175  
0
25  
50  
75  
100  
125  
150  
175  
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 11. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  
junctionꢀtemperature  
Figure 12. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction  
ofꢀjunctionꢀtemperature  
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,  
IC=40A,ꢀRG(on)=5.6Ω,ꢀRG(off)=5.6Ω,ꢀdynamic  
test circuit in Figure E)  
(IC=0.58mA)  
9
Rev.ꢀ2.6,ꢀꢀ2015-01-26  
IHW40N60R  
ResonantꢀSwitchingꢀSeries  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
3.00  
Eoff  
Eoff  
2.75  
2.50  
2.25  
2.00  
1.75  
1.50  
1.25  
1.00  
0
10  
20  
30  
40  
50  
60  
70  
80  
0
10  
20  
30  
40  
50  
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]  
RG,ꢀGATEꢀRESISTANCEꢀ[Ω]  
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀcollectorꢀcurrent  
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀgateꢀresistance  
(inductiveꢀload,ꢀTj=175°C,ꢀVCE=400V,  
VGE=0/15V,ꢀRG(on)=5.6Ω,ꢀRG(off)=5.6Ω,  
dynamic test circuit in Figure E)  
(inductiveꢀload,ꢀTj=175°C,ꢀVCE=400V,  
VGE=0/15V,ꢀdynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)  
1.50  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
Eoff  
Eon*  
1.25  
1.00  
0.75  
0.50  
25  
50  
75  
100  
125  
150  
175  
300  
400  
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
Figure 15. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀjunctionꢀtemperature  
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,  
IC=40A,ꢀRG(on)=5.6Ω,ꢀRG(off)=5.6Ω,ꢀdynamic  
test circuit in Figure E)  
Figure 16. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀcollectorꢀemitterꢀvoltage  
(inductiveꢀload,ꢀTj=175°C,ꢀVGE=0/15V,  
IC=40A,ꢀRG(on)=5.6Ω,ꢀRG(off)=5.6Ω,ꢀdynamic  
test circuit in Figure E)  
10  
Rev.ꢀ2.6,ꢀꢀ2015-01-26  
IHW40N60R  
ResonantꢀSwitchingꢀSeries  
16  
14  
12  
10  
8
120V  
480V  
Cies  
Coes  
Cres  
1000  
100  
10  
6
4
2
0
0
50  
100  
150  
200  
250  
0
10  
20  
30  
QGE,ꢀGATEꢀCHARGEꢀ[nC]  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
Figure 17. Typicalꢀgateꢀcharge  
(IC=40A)  
Figure 18. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof  
collector-emitterꢀvoltage  
(VGE=0V,ꢀf=1MHz)  
1
1
D=0.5  
0.2  
D=0.5  
0.2  
0.1  
0.1  
0.1  
0.1  
0.05  
0.05  
0.02  
0.02  
0.01  
0.01  
single pulse  
single pulse  
0.01  
0.01  
i:  
ri[K/W]: 0.0655 0.1301 0.1899  
τi[s]: 1.4E-4 1.0E-3 0.01054274 0.07949796  
1
2
3
4
i:  
ri[K/W]: 0.0655 0.1301 0.1899  
τi[s]:  
1
2
3
4
0.1045  
0.1045  
1.4E-4 1.0E-3 0.01054274 0.07949796  
0.001  
1E-6  
0.001  
1E-6  
1E-5  
1E-4  
0.001  
0.01  
0.1  
1
1E-5  
1E-4  
0.001  
0.01  
0.1  
1
tp,ꢀPULSEꢀWIDTHꢀ[s]  
tp,ꢀPULSEꢀWIDTHꢀ[s]  
Figure 19. IGBTꢀtransientꢀthermalꢀimpedance  
(D=tp/T)  
Figure 20. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa  
functionꢀofꢀpulseꢀwidth  
(D=tp/T)  
11  
Rev.ꢀ2.6,ꢀꢀ2015-01-26  
IHW40N60R  
ResonantꢀSwitchingꢀSeries  
120  
100  
80  
60  
40  
20  
0
3.00  
Tj=25°C  
Tj=175°C  
IF=20A  
IF=40A  
IF=80A  
2.75  
2.50  
2.25  
2.00  
1.75  
1.50  
1.25  
1.00  
0
1
2
3
4
0
25  
50  
75  
100  
125  
150  
175  
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]  
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 21. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction Figure 22. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction  
ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature  
12  
Rev.ꢀ2.6,ꢀꢀ2015-01-26  
IHW40N60R  
ResonantꢀSwitchingꢀSeries  
PG-TO247-3  
13  
Rev.ꢀ2.6,ꢀꢀ2015-01-26  
IHW40N60R  
ResonantꢀSwitchingꢀSeries  
VGE(t)  
I,V  
90% VGE  
trr = ta + tb  
Qrr = Qa + Qb  
dIF/dt  
a
b
10% VGE  
t
Qa  
Qb  
IC(t)  
dI  
90% IC  
10% IC  
90% IC  
10% IC  
Figure C. Definition of diode switching  
t
characteristics  
VCE(t)  
t
t
td(off)  
tf  
td(on)  
tr  
Figure A.  
VGE(t)  
90% VGE  
Figure D.  
10% VGE  
t
IC(t)  
CC  
2% IC  
t
VCE(t)  
Figure E. Dynamic test circuit  
Parasitic inductance L ,  
s
parasitic capacitor C ,  
s
relief capacitor C ,  
r
t2  
t4  
(only for ZVT switching)  
E
=
VCE x IC x dt  
E
=
VCE x IC x dt  
off  
on  
2% VCE  
t1  
t3  
t
t1  
t2  
t3  
t4  
Figure B.  
14  
Rev.ꢀ2.6,ꢀꢀ2015-01-26  
IHW40N60R  
Resonant Switching Series  
Revision History  
IHW40N60R  
Revision: 2015-01-26, Rev. 2.6  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
1.1  
2.2  
2.3  
2.4  
2.5  
2.6  
2007-10-26  
-
-
-
2008-07-29  
2011-08-03  
2013-12-10 New value ICES max limit at 175°C  
2014-03-12 Storage temp -55...+150°C  
2015-01-26 Minor changes  
We Listen to Your Comments  
Any information within this document that you feel is wrong, unclear or missing at all?  
Your feedback will help us to continuously improve the quality of this document.  
Please send your proposal (including a reference to this document) to: erratum@infineon.com  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
81726 München, Germany  
© 2015 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.  
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the  
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,  
including without limitation, warranties of non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon  
Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements, components may contain dangerous substances. For information on the types in  
question, please contact the nearest Infineon Technologies Office.  
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems  
and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon  
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,  
automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life  
support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain  
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be  
endangered.  
15  
Rev. 2.6, 2015-01-26  

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