IKD06N60RA [INFINEON]
Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel;
| 型号： | IKD06N60RA |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel 栅 |
| 文件： | 总16页 (文件大小：2321K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT
IGBTꢀwithꢀintegratedꢀdiodeꢀinꢀpackagesꢀofferingꢀspaceꢀsavingꢀadvantage
IKD06N60RA
600VꢀTRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
Dataꢀsheet
IndustrialꢀPowerꢀControl
IKD06N60RA
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
IGBTꢀwithꢀintegratedꢀdiodeꢀinꢀpackagesꢀofferingꢀspaceꢀsavingꢀadvantage
ꢀ
C
E
Features:
TRENCHSTOPTMꢀReverseꢀConductingꢀ(RC)ꢀtechnologyꢀforꢀ600V
applicationsꢀoffering
•ꢀOptimisedꢀVCEsatꢀandꢀVFꢀforꢀlowꢀconductionꢀlossesꢀ
•ꢀSmoothꢀswitchingꢀperformanceꢀleadingꢀtoꢀlowꢀEMIꢀlevelsꢀ
•ꢀVeryꢀtightꢀparameterꢀdistributionꢀꢀꢀꢀꢀꢀꢀ
G
•ꢀOperatingꢀrangeꢀofꢀ1ꢀtoꢀ20kHzꢀ
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°Cꢀ
•ꢀShortꢀcircuitꢀcapabilityꢀofꢀ5µsꢀ
C
•ꢀBestꢀinꢀclassꢀcurrentꢀversusꢀpackageꢀsizeꢀperformanceꢀ
•ꢀQualifiedꢀaccordingꢀtoꢀAECQ101ꢀ
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliantꢀ(forꢀPG-TO252:ꢀsolder
temperatureꢀ260°C,ꢀMSL1)
G
CompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
http://www.infineon.com/igbt/
E
Applications:
•ꢀHIDꢀlighting
•ꢀPiezoꢀinjection
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.65V 175°C
Marking
K06R60A
Package
IKD06N60RA
600V
6A
PG-TO252-3
2
Rev.ꢀ2.1,ꢀꢀ2012-10-25
IKD06N60RA
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
3
Rev.ꢀ2.1,ꢀꢀ2012-10-25
IKD06N60RA
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
Maximumꢀratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
600
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°C
TCꢀ=ꢀ100°C
IC
12.0
6.0
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
18.0
18.0
A
A
TurnꢀoffꢀsafeꢀoperatingꢀareaꢀVCEꢀ≤ꢀ600V,ꢀTvjꢀ≤ꢀ175°C
-
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°C
TCꢀ=ꢀ100°C
IF
12.0
6.0
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
18.0
±20
A
V
Gate-emitter voltage
Short circuit withstand time
VGEꢀ=ꢀ15.0V,ꢀVCCꢀ≤ꢀ400V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvjꢀ=ꢀ150°C
tSC
µs
5
PowerꢀdissipationꢀTCꢀ=ꢀ25°C
Operating junction temperature
Storage temperature
Ptot
Tvj
100.0
W
°C
°C
-40...+175
-55...+175
Tstg
Soldering temperature,
reflow soldering (MSL1 according to JEDEC J-STA-020)
°C
260
ThermalꢀResistance
Parameter
Symbol Conditions
Max.ꢀValue
Unit
Characteristic
IGBT thermal resistance,1)
junction - case
Diode thermal resistance,2)
junction - case
Rth(j-c)
Rth(j-c)
Rth(j-a)
1.50
3.60
75
K/W
K/W
K/W
Thermal resistance, min. footprint
junction - ambient
Thermal resistance, 6cm² Cu on
PCB
Rth(j-a)
50
K/W
junction - ambient
1) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple.
2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple.
4
Rev.ꢀ2.1,ꢀꢀ2012-10-25
IKD06N60RA
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.20mA
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ6.0A
600
-
-
V
V
Collector-emitter saturation voltage VCEsat
Tvjꢀ=ꢀ25°C
-
-
1.65 2.10
1.85
Tvjꢀ=ꢀ175°C
-
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ6.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Diode forward voltage
VF
-
-
1.70 2.10
V
V
1.70
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ0.11mA,ꢀVCEꢀ=ꢀVGE
4.3
5.0
5.7
VCEꢀ=ꢀ600V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Zero gate voltage collector current ICES
-
-
-
-
40.0 µA
1000.0
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ6.0A
-
-
-
100
-
nA
S
3.4
Integrated gate resistor
rG
none
Ω
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
470
24
-
-
-
Output capacitance
Coes
Cres
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
14
VCCꢀ=ꢀ480V,ꢀICꢀ=ꢀ6.0A,ꢀ
VGEꢀ=ꢀ15V
Gate charge
QG
-
-
48.0
46
-
-
nC
A
Short circuit collector current
Max. 1000 short circuits
Time between short circuits: ≥ 1.0s
VGEꢀ=ꢀ15.0V,ꢀVCCꢀ≤ꢀ400V,ꢀ
tSCꢀ≤ꢀ5µs
Tvjꢀ=ꢀ25°C
IC(SC)
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad,ꢀatꢀTvjꢀ=ꢀ25°C
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
12
7
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ6.0A,
VGEꢀ=ꢀ0.0/15.0V,
rGꢀ=ꢀ23.0Ω,ꢀLσꢀ=ꢀ60nH,
Cσꢀ=ꢀ40pF
Turn-off delay time
Fall time
127
152
0.11
0.22
0.33
ns
ns
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Ets
mJ
mJ
mJ
5
Rev.ꢀ2.1,ꢀꢀ2012-10-25
IKD06N60RA
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
68
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ6.0A,
Qrr
0.37
12.0
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ800A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-211
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad,ꢀatꢀTvjꢀ=ꢀ175°C
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
12
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ175°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ6.0A,
VGEꢀ=ꢀ0.0/15.0V,
rGꢀ=ꢀ23.0Ω,ꢀLσꢀ=ꢀ60nH,
Cσꢀ=ꢀ40pF
10
Turn-off delay time
Fall time
164
171
0.20
0.36
0.56
ns
ns
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Ets
mJ
mJ
mJ
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
74
-
-
-
ns
µC
A
Tvjꢀ=ꢀ175°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ6.0A,
Qrr
0.80
17.0
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ800A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-237
-
A/µs
6
Rev.ꢀ2.1,ꢀꢀ2012-10-25
IKD06N60RA
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
4
3
2
1
0
10
tp=1µs
50µs
20µs
10µs
1
200µs
500µs
DC
0.1
0.1
1
10
100
1
10
100
1000
f,ꢀSWITCHINGꢀFREQUENCYꢀ[kHz]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 1. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀswitching
frequency
Figure 2. Forwardꢀbiasꢀsafeꢀoperatingꢀarea
(D=0,ꢀTC=25°C,ꢀTvj≤175°C;ꢀVGE=15V)
(Tvj≤175°C,ꢀTa=55°C,ꢀD=0.5,ꢀVCE=400V,
VGE=15/0V,ꢀrG=23Ω,ꢀPCBꢀmounting,ꢀ6cm2
Cu,ꢀPtot=2,4W)
110
100
90
80
70
60
50
40
30
20
10
0
12
10
8
6
4
2
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 3. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
Figure 4. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
temperature
(Tvj≤175°C)
(VGE≥15V,ꢀTvj≤175°C)
7
Rev.ꢀ2.1,ꢀꢀ2012-10-25
IKD06N60RA
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
18
16
14
12
10
8
18
VGE=20V
17V
15V
13V
11V
9V
VGE=20V
17V
15V
13V
11V
9V
16
14
12
10
8
7V
7V
6
6
4
4
2
2
0
0
0
1
2
3
4
0
1
2
3
4
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 5. Typicalꢀoutputꢀcharacteristic
(Tvj=25°C)
Figure 6. Typicalꢀoutputꢀcharacteristic
(Tvj=175°C)
18
3.5
Tj=25°C
Tj=175°C
IC=3A
IC=6A
IC=12A
3.0
15
12
9
2.5
2.0
1.5
1.0
0.5
0.0
6
3
0
4
6
8
10
12
14
0
25
50
75
100
125
150
175
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 7. Typicalꢀtransferꢀcharacteristic
(VCE=10V)
Figure 8. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas
aꢀfunctionꢀofꢀjunctionꢀtemperature
(VGE=15V)
8
Rev.ꢀ2.1,ꢀꢀ2012-10-25
IKD06N60RA
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
1000
100
10
1000
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
100
10
1
1
2
4
6
8
10
12
10
20
30
40
50
60
70
80
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
rG,ꢀGATEꢀRESISTORꢀ[Ω]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
collectorꢀcurrent
Figure 10. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate
resistor
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=400V,
VGE=15/0V,ꢀrG=23Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=400V,
VGE=15/0V,ꢀIC=6A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
1000
7
td(off)
tf
td(on)
tr
typ.
min.
max.
6
5
4
3
2
1
100
10
1
25
50
75
100
125
150
175
25
50
75
100
125
150
175
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 11. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
junctionꢀtemperature
Figure 12. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=15/0V,
IC=6A,ꢀrG=23Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(IC=0.11mA)
9
Rev.ꢀ2.1,ꢀꢀ2012-10-25
IKD06N60RA
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
1.0
0.8
0.6
0.4
0.2
0.0
0.8
Eoff
Eon
Ets
Eoff
Eon
Ets
0.6
0.4
0.2
0.0
0
2
4
6
8
10
12
10
20
30
40
50
60
70
80
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
rG,ꢀGATEꢀRESISTORꢀ[Ω]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀcurrent
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistor
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=400V,
VGE=15/0V,ꢀrG=23Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=400V,
VGE=15/0V,ꢀIC=6A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
0.5
0.7
Eoff
Eon
Ets
Eoff
Eon
Ets
0.6
0.4
0.3
0.2
0.1
0.0
0.5
0.4
0.3
0.2
0.1
0.0
25
50
75
100
125
150
175
300
350
400
450
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 15. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=15/0V,
IC=6A,ꢀrG=23Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Figure 16. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀTvj=175°C,ꢀVGE=15/0V,
IC=6A,ꢀrG=23Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
10
Rev.ꢀ2.1,ꢀꢀ2012-10-25
IKD06N60RA
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
16
14
12
10
8
1000
120V
480V
Ciss
Coss
Crss
100
6
4
2
0
10
0
10
20
30
40
50
0
5
10
15
20
25
30
QGE,ꢀGATEꢀCHARGEꢀ[nC]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 17. Typicalꢀgateꢀcharge
(IC=6A)
Figure 18. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
(VGE=0V,ꢀf=1MHz)
90
80
70
60
50
40
30
20
10
0
14
12
10
8
6
4
2
0
12
14
16
18
20
10
11
12
13
14
15
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 19. Typicalꢀshortꢀcircuitꢀcollectorꢀcurrentꢀasꢀa
functionꢀofꢀgate-emitterꢀvoltage
Figure 20. Shortꢀcircuitꢀwithstandꢀtimeꢀasꢀaꢀfunctionꢀof
gate-emitterꢀvoltage
(VCE≤400V,ꢀstartꢀatꢀTvj=25°C)
(VCE≤400V,ꢀstartꢀatꢀTvj≤150°C)
11
Rev.ꢀ2.1,ꢀꢀ2012-10-25
IKD06N60RA
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
1
1
D=0.5
D=0.5
0.2
0.2
0.1
0.1
0.05
0.05
0.02
0.02
0.01
0.01
0.1
single pulse
single pulse
0.1
i:
ri[K/W]: 0.1032 0.7299 0.5682 0.0638
τi[s]: 7.9E-5 4.0E-4 1.8E-3 0.0307
1
2
3
4
i:
ri[K/W]: 1.0958 1.6643 0.7461 0.0827
τi[s]: 7.9E-5 2.8E-4 1.7E-3 0.02494
1
2
3
4
0.01
0.01
1E-7 1E-6 1E-5 1E-4 0.001 0.01
0.1
1
1E-7 1E-6 1E-5 1E-4 0.001 0.01
0.1
1
tp,ꢀPULSEꢀWIDTHꢀ[s]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 21. IGBTꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidthꢀ1)ꢀ(seeꢀpageꢀ4)
(D=tp/T)
Figure 22. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidthꢀ2)ꢀ(seeꢀpageꢀ4)
(D=tp/T)
200
1.0
Tj=175°C, IF = 6A
Tj=25°C, IF = 6A
Tj=175°C, IF = 6A
Tj=25°C, IF = 6A
0.8
0.6
0.4
0.2
0.0
150
100
50
0
500
600
700
800
900
500
600
700
800
900
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 23. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction Figure 24. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
(VR=400V)
12
Rev.ꢀ2.1,ꢀꢀ2012-10-25
IKD06N60RA
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
20
18
16
14
12
10
8
0
Tj=175°C, IF = 6A
Tj=25°C, IF = 6A
Tj=175°C, IF = 6A
Tj=25°C, IF = 6A
-100
-200
-300
-400
500
600
700
800
900
500
600
700
800
900
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 25. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
Figure 26. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
(VR=400V)
18
2.5
IF=3A
IF=6A
IF=12A
16
Tj=25°C, UG=0V
Tj=175°C, UG=0V
14
12
10
8
2.0
1.5
1.0
6
4
2
0
0
1
2
3
0
25
50
75
100
125
150
175
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 27. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction Figure 28. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature
13
Rev.ꢀ2.1,ꢀꢀ2012-10-25
IKD06N60RA
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
-
-
2
2
PG
5 3
TO
14
Rev.ꢀ2.1,ꢀꢀ2012-10-25
IKD06N60RA
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
t
15
Rev.ꢀ2.1,ꢀꢀ2012-10-25
IKD06N60RA
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
RevisionꢀHistory
IKD06N60RA
Revision:ꢀ2012-10-25,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.1
2012-10-25 Final data sheet
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and/orꢀautomotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineon
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automotive,ꢀaviationꢀandꢀaerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLife
supportꢀdevicesꢀorꢀsystemsꢀareꢀintendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustain
and/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀisꢀreasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbe
endangered.
16
Rev.ꢀ2.1,ꢀꢀ2012-10-25
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