IKD08N65ET6 [INFINEON]
TRENCHSTOP™ IGBT6;
| 型号： | IKD08N65ET6 |
| 厂家： | 
Infineon |
| 描述： | TRENCHSTOP™ IGBT6 双极性晶体管 |
| 文件： | 总16页 (文件大小：1644K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IKD08N65ET6
TRENCHSTOP™ꢀIGBT6
IGBTꢀinꢀtrenchꢀandꢀfield-stopꢀtechnologyꢀwithꢀsoft,ꢀfastꢀrecoveryꢀanti-parallel
Rapidꢀdiode
ꢀ
C
FeaturesꢀandꢀBenefits:
•ꢀVeryꢀlowꢀVCE(sat)ꢀ1.5Vꢀ(typ.)
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀShortꢀcircuitꢀwithstandꢀtimeꢀ3µs
Trenchꢀandꢀfield-stopꢀtechnologyꢀforꢀ650Vꢀapplicationsꢀoffersꢀ:
ꢀꢀꢀ•ꢀveryꢀtightꢀparameterꢀdistribution
ꢀꢀꢀ•ꢀhighꢀruggedness,ꢀtemperatureꢀstableꢀbehavior
ꢀꢀꢀ•ꢀlowꢀVCEsatꢀandꢀpositiveꢀtemperatureꢀcoefficient
•ꢀLowꢀgateꢀchargeꢀQG
G
E
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀVeryꢀsoft,ꢀfastꢀrecoveryꢀanti-parallelꢀRapidꢀdiode
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPLECSꢀModels:
www.infineon.com/igbt
C
PotentialꢀApplications:
G
Drives
ꢀꢀ•ꢀGPDꢀ(generalꢀpurposeꢀdrives)
Majorꢀhomeꢀappliances
ꢀꢀ•ꢀAirꢀconditioning
E
ꢀꢀ•ꢀOtherꢀmajorꢀhomeꢀappliances
Smallꢀhomeꢀappliances
ꢀꢀ•ꢀOtherꢀsmallꢀhomeꢀappliances
ProductꢀValidation:
Qualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀto
theꢀrelevantꢀtestsꢀofꢀJEDEC47/20/22
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.5V 175°C
Marking
Package
IKD08N65ET6
650V
8A
K08EET6
PG-TO252-3
Datasheet
www.infineon.com
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument
Vꢀ2.3
2020-04-20
IKD08N65ET6
TRENCHSTOP™ꢀIGBT6
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Datasheet
2
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IKD08N65ET6
TRENCHSTOP™ꢀIGBT6
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
650
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Tcꢀ=ꢀ25°C
Tcꢀ=ꢀ100°C
IC
15.0
9.0
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
25.0
25.0
A
A
TurnꢀoffꢀsafeꢀoperatingꢀareaꢀVCEꢀ≤ꢀ650V,ꢀTvjꢀ≤ꢀ175°C
-
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Tcꢀ=ꢀ25°C
Tcꢀ=ꢀ100°C
IF
15.0
10.0
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
25.0
A
V
Gate-emitter voltage
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)
±20
±30
Short circuit withstand time
VGEꢀ=ꢀ15.0V,ꢀVCCꢀ≤ꢀ360V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvjꢀ=ꢀ150°C
tSC
µs
W
3
PowerꢀdissipationꢀTcꢀ=ꢀ25°C
PowerꢀdissipationꢀTcꢀ=ꢀ100°C
47.0
23.0
Ptot
Operating junction temperature
Storage temperature
Tvj
-40...+175
-55...+150
°C
°C
Tstg
Soldering temperature,
reflow soldering (MSL1 according to JEDEC J-STA-020)
°C
260
ThermalꢀResistance
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
RthꢀCharacteristics
IGBT thermal resistance,
junction - case
Rth(j-c)
Rth(j-c)
Rth(j-a)
-
-
-
-
-
-
3.20 K/W
4.60 K/W
75 K/W
Diode thermal resistance,
junction - case
Thermal resistance, min. footprint
junction - ambient
Thermal resistance, 6cm² Cu on
PCB
Rth(j-a)
-
-
50 K/W
junction - ambient
Datasheet
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IKD08N65ET6
TRENCHSTOP™ꢀIGBT6
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ5.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ125°C
Tvjꢀ=ꢀ150°C
-
-
-
1.50 1.90
Collector-emitter saturation voltage VCEsat
V
V
1.65
1.75
-
-
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ5.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ125°C
-
-
-
1.28 1.75
Diode forward voltage
VF
1.21
1.15
-
-
Tvjꢀ=ꢀ150°C
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ0.12mA,ꢀVCEꢀ=ꢀVGE
4.8
5.6
6.4
V
VCEꢀ=ꢀ650V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ150°C
Zero gate voltage collector current ICES
-
-
-
30
-
µA
240
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ5.0A
-
-
-
100
-
nA
S
5.5
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
480
29
8
-
-
-
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V
fꢀ=ꢀ1000kHz
Output capacitance
Coes
Cres
pF
Reverse transfer capacitance
VCCꢀ=ꢀ520V,ꢀICꢀ=ꢀ5.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
-
-
17.0
-
-
nC
A
Short circuit collector current
Max. 1000 short circuits
Time between short circuits: ≥ 1.0s
VGEꢀ=ꢀ15.0V,ꢀVCCꢀ≤ꢀ360V,
tSCꢀ≤ꢀ3µs
Tvjꢀ=ꢀ150°C
IC(SC)
50
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
20
12
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ5.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ47.0Ω,ꢀRG(off)ꢀ=ꢀ47.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ150pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
59
ns
53
ns
Turn-on energy
Eon
Eoff
Ets
0.11
0.04
0.15
mJ
mJ
mJ
Turn-off energy
Total switching energy
Datasheet
4
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IKD08N65ET6
TRENCHSTOP™ꢀIGBT6
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
43
0.15
4.9
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ5.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ400A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-530
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
18
12
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ150°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ5.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ47.0Ω,ꢀRG(off)ꢀ=ꢀ47.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ150pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
69
ns
78
ns
Turn-on energy
Eon
Eoff
Ets
0.14
0.07
0.21
mJ
mJ
mJ
Turn-off energy
Total switching energy
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
65
0.32
7.2
-
-
-
ns
µC
A
Tvjꢀ=ꢀ150°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ5.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ400A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-340
-
A/µs
Datasheet
5
Vꢀ2.3
2020-04-20
IKD08N65ET6
TRENCHSTOP™ꢀIGBT6
50
40
30
20
10
0
10
tp = 1µs
1
0.1
1
10
100
1000
25
50
75
100
125
150
175
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1. Forwardꢀbiasꢀsafeꢀoperatingꢀarea
(D=0,ꢀTC=25°C,ꢀTvj≤175°C;ꢀVGE=15V.
RecommendedꢀuseꢀatꢀVGE≥15V)
Figure 2. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
temperature
(Tvj≤175°C)
18
15
12
9
25
20
18V
VGE=20V
15
15V
12V
10V
8V
10
5
6
7V
6V
3
0
0
25
50
75
100
125
150
175
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
Figure 4. Typicalꢀoutputꢀcharacteristic
(Tvj=25°C)
(VGE≥15V,ꢀTvj≤175°C)
Datasheet
6
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IKD08N65ET6
TRENCHSTOP™ꢀIGBT6
25
25
20
15
10
5
Tvj = 25°C
Tvj = 150°C
20
VGE=20V
18V
15V
15
12V
10V
8V
10
7V
6V
5
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
5
6
7
8
9
10
11
12
13
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 5. Typicalꢀoutputꢀcharacteristic
(Tvj=150°C)
Figure 6. Typicalꢀtransferꢀcharacteristic
(VCE=50V)
2.6
IC = 2.5A
IC = 5A
IC = 10A
100
2.2
1.8
1.4
1.0
10
td(off)
tf
td(on)
tr
1
0
25
50
75
100
125
150
175
2
4
6
8
10
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 7. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
aꢀfunctionꢀofꢀjunctionꢀtemperature
collectorꢀcurrent
(VGE=15V)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀrG=47Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
7
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IKD08N65ET6
TRENCHSTOP™ꢀIGBT6
100
10
1
100
10
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
1
10
20
30
40
50
60
70
80
90 100
25
50
75
100
125
150
175
rG,ꢀGATEꢀRESISTORꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate Figure 10. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
resistor
junctionꢀtemperature
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀIC=5.0A,Dynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,
IC=5A,ꢀrG=47Ω,DynamicꢀtestꢀcircuitꢀinꢀFigure
E)
6
5
4
3
2
0.4
0.3
0.2
0.1
0.0
typ.
Eoff
Eon
Ets
25
50
75
100
125
150
175
2
3
4
5
6
7
8
9
10
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 11. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
ofꢀjunctionꢀtemperature
(IC=0.12mA)
functionꢀofꢀcollectorꢀcurrent
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀrG=47Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
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IKD08N65ET6
TRENCHSTOP™ꢀIGBT6
0.30
0.25
0.20
0.15
0.10
0.05
0.00
Eoff
Eon
Ets
Eoff
Eon
Ets
0.20
0.10
0.00
10
20
30
40
50
60
70
80
90 100
25
50
75
100
125
150
175
rG,ꢀGATEꢀRESISTORꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistor
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀIC=5A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,
IC=5A,ꢀrG=47Ω,DynamicꢀtestꢀcircuitꢀinꢀFigure
E)
0.3
16
14
12
10
8
Eoff
Eon
Ets
VCCꢀ=ꢀ130V
VCCꢀ=ꢀ520V
0.2
0.1
0.0
6
4
2
0
200
250
300
350
400
450
500
0
4
8
12
16
20
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
QG,ꢀGATEꢀCHARGEꢀ[nC]
Figure 15. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
Figure 16. Typicalꢀgateꢀcharge
(IC=5A)
(inductiveꢀload,ꢀTvj=150°C,ꢀVGE=0/15V,
IC=5A,ꢀrG=47Ω,DynamicꢀtestꢀcircuitꢀinꢀFigure
E)
Datasheet
9
Vꢀ2.3
2020-04-20
IKD08N65ET6
TRENCHSTOP™ꢀIGBT6
1000
100
10
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
Cies
Coes
Cres
i:
1
2
3
4
5
6
ri[K/W]: 0.02726 0.42979 2.34397 0.36299 0.03488 1.1E-3
τi[s]:
2.0E-5
1.8E-4
8.3E-4
4.5E-3
0.1233 4.273
1
0.001
1E-6
0
5
10
15
20
25
30
1E-5
1E-4
0.001
0.01
0.1
1
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 17. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
Figure 18. IGBTꢀtransientꢀthermalꢀimpedance
(D=tp/T)
(VGE=0V,ꢀf=1MHz)
90
Tvj = 25°C, IF = 5A
Tvj = 150°C, IF = 5A
1
70
50
30
10
D = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
single pulse
0.01
i:
ri[K/W]: 0.0475 0.4473 3.4385 0.624 0.054
τi[s]:
1
2
3
4
5
6
1.5E-3
1.8E-5 1.3E-4 6.2E-4 3.5E-3 0.09017 3.99361
0.001
1E-7 1E-6 1E-5 1E-4 0.001 0.01
0.1
1
300
400
500
600
700
tp,ꢀPULSEꢀWIDTHꢀ[s]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 19. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
Figure 20. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀpulseꢀwidth
(D=tp/T)
(VR=400V)
Datasheet
10
Vꢀ2.3
2020-04-20
IKD08N65ET6
TRENCHSTOP™ꢀIGBT6
0.40
10
9
Tvj = 25°C, IF = 5A
Tvj = 150°C, IF = 5A
Tvj = 25°C, IF = 5A
Tvj = 150°C, IF = 5A
0.35
0.30
0.25
0.20
0.15
0.10
8
7
6
5
4
3
300
400
500
600
700
300
400
500
600
700
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
Figure 22. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
-200
25
Tvj = 25°C, IF = 5A
Tvj = 150°C, IF = 5A
Tvj = 25°C
Tvj = 150°C
-300
-400
-500
-600
-700
-800
20
15
10
5
0
300
400
500
600
700
0.5
1.0
1.5
2.0
2.5
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Figure 23. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
Figure 24. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage
(VR=400V)
Datasheet
11
Vꢀ2.3
2020-04-20
IKD08N65ET6
TRENCHSTOP™ꢀIGBT6
1.8
1.6
1.4
1.2
1.0
IF = 2.5A
IF = 5A
IF = 10A
0.8
25
50
75
100
125
150
175
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 25. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
Datasheet
12
Vꢀ2.3
2020-04-20
IKD08N65ET6
TRENCHSTOP™ꢀIGBT6
Package Drawing PG-TO252-3
DOCUMENT NO.
Z8B00003328
MILLIMETERS
DIM
MIN
2.16
0.00
0.64
0.65
4,95
0.46
0.40
5.97
5.02
6.35
4.32
MAX
2.41
0.15
0.89
1.15
5.50
0.61
0.98
6.22
5.84
6.73
5.21
0
A
A1
b
SCALE
2.5
b2
b3
c
0
2.5
5mm
c2
D
EUROPEAN PROJECTION
D1
E
E1
e
2.29 (BSC)
4.57 (BSC)
3
e1
N
ISSUE DATE
05-02-2016
H
9.40
1.18
0.89
0.51
10.48
L
1.78
1.27
1.02
REVISION
L3
L4
06
Datasheet
13
Vꢀ2.3
2020-04-20
IKD08N65ET6
TRENCHSTOP™ꢀIGBT6
Testing Conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
Datasheet
14
Vꢀ2.3
2020-04-20
IKD08N65ET6
TRENCHSTOP™ꢀIGBT6
RevisionꢀHistory
IKD08N65ET6
Revision:ꢀ2020-04-20,ꢀRev.ꢀ2.3
Previous Revision
Revision Date
Subjects (major changes since last revision)
2020-03-16 Preliminary Data sheet
2020-04-20 Final
1.2
2.3
Datasheet
15
Vꢀ2.3
2020-04-20
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