IKFW50N60DH3E_技术文档

IKFW50N60DH3E

TRENCHSTOP^TMꢀAdvancedꢀIsolation

HighꢀspeedꢀswitchingꢀseriesꢀthirdꢀgenerationꢀIGBTꢀcopackedꢀwithꢀRapidꢀ1

fastꢀandꢀsoftꢀantiparallelꢀdiodeꢀinꢀfullyꢀisolatedꢀpackage

ꢀ

C

E

Features:

TRENCHSTOP™ꢀtechnologyꢀoffersꢀ:

•ꢀShortꢀcircuitꢀwithstandꢀtimeꢀ5µsꢀatꢀT_vjꢀ=ꢀ175°C

•ꢀPositiveꢀtemperatureꢀcoefficientꢀinꢀV_CE(sat)

•ꢀLowꢀEMI

G

•ꢀVeryꢀsoft,ꢀfastꢀrecoveryꢀanti-parallelꢀdiode

•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C

•ꢀ2500ꢀV_RMSꢀelectricalꢀisolation,ꢀ50/60ꢀHz,ꢀtꢀ=ꢀ1ꢀmin

•ꢀ100ꢀ%ꢀtestedꢀisolatedꢀmountingꢀsurface

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModelsꢀ:

http://www.infineon.com/igbt

PotentialꢀApplications:

•ꢀAirꢀConditioningꢀPFC

•ꢀGeneralꢀPurposeꢀDrivesꢀ(GPD)

•ꢀServoꢀDrives

Fully isolated package TO-247

ProductꢀValidation:

Qualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀtoꢀtheꢀrelevantꢀtests

ofꢀJEDECꢀ47/20/22

KeyꢀPerformanceꢀandꢀPackageꢀParameters

Type

V_CE

I_C

V_CEsat,ꢀT_vj=25°C T_vjmax

2.2V 175°C

Marking

Package

IKFW50N60DH3E

600V

40A

K50DDH3E

PG-TO247-3-AI

Datasheet

PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument

Vꢀ2.1

www.infineon.com

2017-09-21

IKFW50N60DH3E

TRENCHSTOP^TMꢀAdvancedꢀIsolation

TableꢀofꢀContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Datasheet

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TRENCHSTOP^TMꢀAdvancedꢀIsolation

MaximumꢀRatings

Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.

Parameter

Symbol

Value

Unit

Collector-emitterꢀvoltage,ꢀT_vjꢀ≥ꢀ25°C

V_CE

600

V

DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀT_vjmax

T_hꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire

T_hꢀ=ꢀ65°C

40.0

37.0

I_C

A

T_hꢀ=ꢀ65°C

60.0¹⁾

Pulsedꢀcollectorꢀcurrent,ꢀt_pꢀlimitedꢀbyꢀT_vjmax

I_Cpuls

120.0

A

Turn off safe operating area

V_CEꢀ≤ꢀ600V,ꢀT_vjꢀ≤ꢀ175°C,ꢀt_pꢀ=ꢀ1µs

-

Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀT_vjmax

T_hꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire

T_hꢀ=ꢀ65°C

I_F

40.0

29.0

A

Diodeꢀpulsedꢀcurrent,ꢀt_pꢀlimitedꢀbyꢀT_vjmax

I_Fpuls

V_GE

120.0

A

V

Gate-emitter voltage

TransientꢀGate-emitterꢀvoltageꢀ(t_pꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)

±20

±30

Short circuit withstand time

V_GEꢀ=ꢀ15.0V,ꢀV_CCꢀ≤ꢀ400V

Allowed number of short circuits < 1000

Time between short circuits: ≥ 1.0s

T_vjꢀ=ꢀ150°C

t_SC

µs

5

PowerꢀdissipationꢀT_hꢀ=ꢀ25°C

PowerꢀdissipationꢀT_hꢀ=ꢀ65°C

130.0

95.0

P_tot

W

Operating junction temperature

Storage temperature

T_vj

-40...+175

-55...+150

°C

T_stg

Soldering temperature,

wave soldering 1.6mm (0.063in.) from case for 10s

°C

260

0.6

Mounting torque, M3 screw

Maximum of mounting processes: 3

IsolationꢀvoltageꢀRMS,ꢀfꢀ=ꢀ50/60Hz,ꢀtꢀ=ꢀ1min²⁾

M

Nm

V

V_isol

2500

ThermalꢀResistance

Value

min. typ. max.

Parameter

Symbol Conditions

Unit

R_thꢀCharacteristics

IGBT thermal resistance,³⁾

junction - heatsink

Diode thermal resistance,³⁾

junction - heatsink

R_th(j-h)

R_th(j-a)

-

0.98 1.15 K/W

1.96 2.16 K/W

Thermal resistance

junction - ambient

-

65 K/W

¹⁾Equivalent current rating in TO-247-3 at T_h= 65°C using reference insulation material: 152µm, 0.9 W/mK, standard polyimide based reinforced carrier

insulator

²⁾For a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing.

³⁾At force on body F = 500N, T_a= 25ºC

Datasheet

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TRENCHSTOP^TMꢀAdvancedꢀIsolation

ElectricalꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Value

Parameter

Symbol Conditions

Unit

min. typ. max.

StaticꢀCharacteristic

Collector-emitter breakdown voltage V_(BR)CESV_GEꢀ=ꢀ0V,ꢀI_Cꢀ=ꢀ0.50mA

V_GEꢀ=ꢀ15.0V,ꢀI_Cꢀ=ꢀ40.0A

600

-

V

Collector-emitter saturation voltage V_CEsat

T_vjꢀ=ꢀ25°C

-

2.20 2.70

2.80

T_vjꢀ=ꢀ175°C

-

V_GEꢀ=ꢀ0V,ꢀI_Fꢀ=ꢀ20.0A

T_vjꢀ=ꢀ25°C

T_vjꢀ=ꢀ175°C

Diode forward voltage

V_F

-

1.50 1.90

V

1.45

-

Gate-emitter threshold voltage

V_GE(th)

I_Cꢀ=ꢀ0.43mA,ꢀV_CEꢀ=ꢀV_GE

4.1

5.1

5.7

V_CEꢀ=ꢀ600V,ꢀV_GEꢀ=ꢀ0V

T_vjꢀ=ꢀ25°C

T_vjꢀ=ꢀ175°C

Zero gate voltage collector current I_CES

-

40

-

µA

440

Gate-emitter leakage current

Transconductance

I_GES

g_fs

V_CEꢀ=ꢀ0V,ꢀV_GEꢀ=ꢀ20V

V_CEꢀ=ꢀ20V,ꢀI_Cꢀ=ꢀ40.0A

-

100

-

nA

S

15.0

ElectricalꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Value

Parameter

Symbol Conditions

Unit

min. typ. max.

DynamicꢀCharacteristic

Input capacitance

C_ies

-

1704

73

-

Output capacitance

C_oes

C_res

V_CEꢀ=ꢀ25V,ꢀV_GEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz

pF

Reverse transfer capacitance

48

V_CCꢀ=ꢀ480V,ꢀI_Cꢀ=ꢀ40.0A,

V_GEꢀ=ꢀ15V

Gate charge

Q_G

L_E

-

160.0

13.0

-

nC

nH

Internal emitter inductance

measured 5mm (0.197 in.) from

case

Short circuit collector current

Max. 1000 short circuits

Time between short circuits: ≥ 1.0s

V_GEꢀ=ꢀ15.0V,ꢀV_CCꢀ≤ꢀ400V,

t_SCꢀ≤ꢀ5µs

T_vjꢀ=ꢀ150°C

I_C(SC)

-

A

166

SwitchingꢀCharacteristic,ꢀInductiveꢀLoad

Value

Parameter

Symbol Conditions

Unit

min. typ. max.

IGBTꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ25°C

Turn-on delay time

Rise time

t_d(on)

t_r

t_d(off)

t_f

-

21

39

-

ns

T_vjꢀ=ꢀ25°C,

V_CCꢀ=ꢀ400V,ꢀI_Cꢀ=ꢀ40.0A,

V_GEꢀ=ꢀ0.0/15.0V,

R_G(on)ꢀ=ꢀ8.0Ω,ꢀR_G(off)ꢀ=ꢀ8.0Ω,

Lσꢀ=ꢀ75nH,ꢀCσꢀ=ꢀ30pF

Lσ,ꢀCσꢀfromꢀFig.ꢀE

Energy losses include “tail” and

diode reverse recovery.

Turn-off delay time

Fall time

174

18

ns

Turn-on energy

E_on

E_off

E_ts

1.28

0.56

1.84

mJ

Turn-off energy

Total switching energy

Datasheet

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IKFW50N60DH3E

TRENCHSTOP^TMꢀAdvancedꢀIsolation

Diode reverse recovery time

Diode reverse recovery charge

t_rr

-

64

-

ns

µC

A

T_vjꢀ=ꢀ25°C,

V_Rꢀ=ꢀ400V,

I_Fꢀ=ꢀ20.0A,

di_F/dtꢀ=ꢀ1000A/µs

Q_rr

0.51

11.7

Diode peak reverse recovery current I_rrm

Diode peak rate of fall of reverse

recoveryꢀcurrentꢀduringꢀt_b

di_rr/dt

-

-840

-

A/µs

SwitchingꢀCharacteristic,ꢀInductiveꢀLoad

Value

Parameter

Symbol Conditions

Unit

min. typ. max.

IGBTꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ175°C

Turn-on delay time

Rise time

t_d(on)

t_r

t_d(off)

t_f

-

21

37

-

ns

T_vjꢀ=ꢀ175°C,

V_CCꢀ=ꢀ400V,ꢀI_Cꢀ=ꢀ40.0A,

V_GEꢀ=ꢀ0.0/15.0V,

R_G(on)ꢀ=ꢀ8.0Ω,ꢀR_G(off)ꢀ=ꢀ8.0Ω,

Lσꢀ=ꢀ75nH,ꢀCσꢀ=ꢀ30pF

Lσ,ꢀCσꢀfromꢀFig.ꢀE

Energy losses include “tail” and

diode reverse recovery.

Turn-off delay time

Fall time

200

20

ns

Turn-on energy

E_on

E_off

E_ts

1.75

0.73

2.48

mJ

Turn-off energy

Total switching energy

Diode reverse recovery time

Diode reverse recovery charge

t_rr

-

103

1.24

17.2

-

ns

µC

A

T_vjꢀ=ꢀ175°C,

V_Rꢀ=ꢀ400V,

I_Fꢀ=ꢀ20.0A,

Q_rr

Diode peak reverse recovery current I_rrm

di_F/dtꢀ=ꢀ1000A/µs

Diode peak rate of fall of reverse

recoveryꢀcurrentꢀduringꢀt_b

di_rr/dt

-

-502

-

A/µs

Datasheet

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IKFW50N60DH3E

TRENCHSTOP^TMꢀAdvancedꢀIsolation

140

120

100

80

100

not for linear use

10

60

1

40

20

0.1

0

1

10

100

1000

25

50

75

100

125

150

175

V_CE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]

T_h,ꢀHEATSINKꢀTEMPERATUREꢀ[°C]

Figure 1. Forwardꢀbiasꢀsafeꢀoperatingꢀarea

Figure 2. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀheatsink

(D=0,ꢀT_h=25°C,ꢀT_j≤175°C,ꢀV_GE=15V,ꢀt_p≤1µs)

temperature

(T_j≤175°C)

45

40

35

30

25

20

15

10

5

120

TO247 Advanced Isolation

TO247 with insulator film (using same chip)

110

V_GE=20V

100

17V

90

80

70

60

50

40

30

20

10

0

15V

13V

11V

9V

7V

5V

0

25

50

75

100

125

150

175

0

1

2

3

4

5

T_h,ꢀHEATSINKꢀTEMPERATUREꢀ[°C]

V_CE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]

Figure 3. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀheatsink

temperature

Figure 4. Typicalꢀoutputꢀcharacteristic

(T_j=25°C)

(V_GE≥15V,ꢀT_j≤175°C,ꢀinsulatorꢀfilm:ꢀ152µm,

0.9W/mK)

Datasheet

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IKFW50N60DH3E

TRENCHSTOP^TMꢀAdvancedꢀIsolation

120

100

80

60

40

20

0

T_vj= 25°C

T_vj= 175°C

V_GE=20V

100

17V

15V

13V

11V

9V

80

60

40

20

0

7V

5V

0

1

2

3

4

5

6

4

6

8

10

12

14

16

V_CE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]

V_GE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]

Figure 5. Typicalꢀoutputꢀcharacteristic

(T_j=175°C)

Figure 6. Typicalꢀtransferꢀcharacteristic

(V_CE=20V)

5.0

I_C= 20A

I_C= 40A

I_C= 80A

t_d(off)

t_f

t_d(on)

t_r

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

100

10

1

25

50

75

100

125

150

175

0

10

20

30

40

50

60

70

80

T_j,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]

I_C,ꢀCOLLECTORꢀCURRENTꢀ[A]

Figure 7. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof

aꢀfunctionꢀofꢀjunctionꢀtemperature

collectorꢀcurrent

(V_GE=15V)

(ind.ꢀload,ꢀT_j=175°C,ꢀV_CE=400V,ꢀV_GE=0/15V,

R_G=8Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)

Datasheet

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IKFW50N60DH3E

TRENCHSTOP^TMꢀAdvancedꢀIsolation

1000

100

10

t_d(off)

t_f

t_d(on)

t_r

t_d(off)

t_f

t_d(on)

t_r

100

10

1

0

10

20

30

40

50

60

25

50

75

100

125

150

175

R_G,ꢀGATEꢀRESISTORꢀ[Ω]

T_j,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]

Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate Figure 10. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof

resistor

junctionꢀtemperature

(ind.ꢀload,ꢀT_j=175°C,ꢀV_CE=400V,ꢀV_GE=0/15V,

I_C=40A,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)

(ind.ꢀload,ꢀV_CE=400V,ꢀV_GE=0/15V,ꢀI_C=40A,

r_G=8Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)

6

5

4

3

2

8

7

6

5

4

3

2

1

0

typ.

min.

max.

E_off

E_on

E_ts

25

50

75

100

125

150

0

10

20

30

40

50

60

70

80

T_j,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]

I_C,ꢀCOLLECTORꢀCURRENTꢀ[A]

Figure 11. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa

ofꢀjunctionꢀtemperature

functionꢀofꢀcollectorꢀcurrent

(I_C=0.43mA)

(ind.ꢀload,ꢀT_j=175°C,ꢀV_CE=400V,ꢀV_GE=0/15V,

R_G=8Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)

Datasheet

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TRENCHSTOP^TMꢀAdvancedꢀIsolation

7

3.0

2.5

2.0

1.5

1.0

0.5

0.0

E_off

E_on

E_ts

E_off

E_on

E_ts

6

5

4

3

2

1

0

10

20

30

40

50

60

25

50

75

100

125

150

175

R_G,ꢀGATEꢀRESISTORꢀ[Ω]

T_j,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]

Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa

Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa

functionꢀofꢀjunctionꢀtemperature

functionꢀofꢀgateꢀresistor

(ind.ꢀload,ꢀT_j=175°C,ꢀV_CE=400V,ꢀV_GE=0/15V,

I_C=40A,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)

(indꢀload,ꢀV_CE=400V,ꢀV_GE=0/15V,ꢀI_C=40A,

R_G=8Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

16

E_off

E_on

E_ts

V_CCꢀ=ꢀ120V

V_CCꢀ=ꢀ480V

14

12

10

8

6

4

2

0

200

250

300

350

400

450

500

0

20

40

60

80 100 120 140 160 180

V_CE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]

Q_GE,ꢀGATEꢀCHARGEꢀ[nC]

Figure 15. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa

functionꢀofꢀcollectorꢀemitterꢀvoltage

(ind.ꢀload,ꢀT_j=175°C,ꢀV_GE=0/15V,ꢀI_C=40A,

R_G=8Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)

Figure 16. Typicalꢀgateꢀcharge

(I_C=40A)

Datasheet

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IKFW50N60DH3E

TRENCHSTOP^TMꢀAdvancedꢀIsolation

400

350

300

250

200

150

100

50

C_ies

C_oes

C_res

1E+4

1000

100

10

0

10

20

30

10

12

14

16

18

20

V_CE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]

V_GE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]

Figure 17. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof

collector-emitterꢀvoltage

Figure 18. Typicalꢀshortꢀcircuitꢀcollectorꢀcurrentꢀasꢀa

functionꢀofꢀgate-emitterꢀvoltage

(V_GE=0V,ꢀf=1MHz)

(V_CE≤400V,ꢀstartꢀatT_j=25°C)

14

12

10

8

1

D = 0.5

0.2

0.1

0.05

0.1

0.02

0.01

single pulse

6

0.01

4

i:

r_i[K/W]: 4.1E-3 0.13618 0.19283 0.21714 0.27071 0.30778 0.022418

τ_i[s]: 1.8E-5 2.6E-4 2.2E-3 0.017983 0.200473 0.9009 15.9185

1

2

3

4

5

6

7

2

0.001

1E-6 1E-5 1E-4 0.001 0.01

10

11

12

13

14

15

0.1

1

10

V_GE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]

t_p,ꢀPULSEꢀWIDTHꢀ[s]

Figure 19. Shortꢀcircuitꢀwithstandꢀtimeꢀasꢀaꢀfunctionꢀof Figure 20. IGBTꢀtransientꢀthermalꢀimpedanceꢀasꢀa

gate-emitterꢀvoltage

functionꢀofꢀpulseꢀwidth

(V_CE≤400V,ꢀstartꢀatꢀT_j≤150°C)

(D=t_p/T)

Datasheet

10

Vꢀ2.1

2017-09-21

IKFW50N60DH3E

TRENCHSTOP^TMꢀAdvancedꢀIsolation

250

200

150

100

50

T_vj= 25°C, I_F= 20A

T_vj= 175°C, I_F= 20A

1

D = 0.5

0.2

0.1

0.05

0.1

0.02

0.01

single pulse

0.01

i:

r_i[K/W]: 0.42614 0.70609 0.32538 0.32296 0.36223 0.023287

τ_i[s]: 2.3E-4 1.4E-3 0.012128 0.160012 0.781857 15.94134

1

2

3

4

5

6

0.001

0

1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1

1

10

200

400

600

800

1000

1200

t_p,ꢀPULSEꢀWIDTHꢀ[s]

di_F/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]

Figure 21. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa

Figure 22. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction

ofꢀdiodeꢀcurrentꢀslope

functionꢀofꢀpulseꢀwidth

(D=t_p/T)

(V_R=400V)

1.4

18

T_vj= 25°C, I_F= 20A

T_vj= 175°C, I_F= 20A

T_vj= 25°C, I_F= 20A

T_vj= 175°C, I_F= 20A

16

1.2

1.0

0.8

0.6

0.4

0.2

0.0

14

12

10

8

6

4

2

0

200

400

600

800

1000

1200

200

400

600

800

1000

1200

di_F/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]

Figure 23. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa

functionꢀofꢀdiodeꢀcurrentꢀslope

(V_R=400V)

Figure 24. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa

functionꢀofꢀdiodeꢀcurrentꢀslope

(V_R=400V)

Datasheet

11

Vꢀ2.1

2017-09-21

IKFW50N60DH3E

TRENCHSTOP^TMꢀAdvancedꢀIsolation

0

120

100

80

60

40

20

0

T_vj= 25°C, I_F= 20A

T_vj= 175°C, I_F= 20A

-100

T_vj= 25°C

T_vj= 175°C

-200

-300

-400

-500

-600

-700

-800

-900

200

400

600

800

1000

1200

0

1

2

3

4

di_F/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]

V_F,ꢀFORWARDꢀVOLTAGEꢀ[V]

Figure 25. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse

recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode

currentꢀslope

Figure 26. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction

ofꢀforwardꢀvoltage

(V_R=400V)

2.00

I_F= 10A

I_F= 20A

I_F= 40A

1.75

1.50

1.25

1.00

25

50

75

100

125

150

175

T_j,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]

Figure 27. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction

ofꢀjunctionꢀtemperature

Datasheet

12

Vꢀ2.1

2017-09-21

IKFW50N60DH3E

TRENCHSTOP^TMꢀAdvancedꢀIsolation

PG-TO247-3-AI (PGHSIP2473)

MILLIMETERS

DIMENSIONS

MIN.

MAX.

DOCUMENT NO.

A

A1

A2

A3

b

-

5.18

Z8B00186434

4.70

2.23

0.20

1.10

0.50

22.20

16.96

15.70

13.68

4.90

2.59

REVISION

0.28

02

1.30

SCALE 3:1

c

0.70

D

22.40

17.16

15.90

13.88

0 1

2 3 4 5 6 7 8mm

D1

E

EUROPEAN PROJECTION

E1

e

5.44

L

18.31

2.76

3.50

5.70

5.96

18.91

2.96

3.70

5.90

6.36

L1

øP

øP1

Q

ISSUE DATE

05.06.2018

Note:

For a proper handling and assembly of the advanced isolation device in the application the isolation layer must not be exposed to potential

penetration via sharp implements or mechanical impacts/shocks, which exceed levels indicated in International Standard (IEC6006826 and

IEC60068227). The advanced isolation device is intended only to be used assembled on an appropriate heatsink with recommended flatness

of <20µm per 100mm and roughness of <10µm.

Datasheet

13

Vꢀ2.1

2017-09-21

IKFW50N60DH3E

TRENCHSTOP^TMꢀAdvancedꢀIsolation

Testing Conditions

V_GE(t)

I,V

90% V_GE

t_rr= t_a+ t_b

dI_F/dt

Q_rr= Q_a+ Q_b

a

b

10% V_GE

t

Q_a

Q_b

I_C(t)

dI

90% I_C

10% I_C

Figure C. Definition of diode switching

characteristics

t

V_CE(t)

t

t_d(off)

t_f

t_d(on)

t_r

Figure A.

V_GE(t)

90% V_GE

Figure D.

10% V_GE

t

I_C(t)

CC

2% I_C

t

V_CE(t)

Figure E. Dynamic test circuit

Parasitic inductance L ,

parasitic capacitor C ,

s

relief capacitor C ,

(only for ZVT switching)

r

t₂

t₄

E

=

V_CEx I_Cx dt

E

=

V_CEx I_Cx dt

off

on

2% V_CE

t₁

t₃

t

t₁

t₂

t₃

t₄

Figure B.

Datasheet

14

Vꢀ2.1

2017-09-21

IKFW50N60DH3E

TRENCHSTOP^TMꢀAdvancedꢀIsolation

RevisionꢀHistory

IKFW50N60DH3E

Revision:ꢀ2017-09-21,ꢀRev.ꢀ2.1

Previous Revision

Revision Date

Subjects (major changes since last revision)

2.1

2017-09-21 Final data sheet

Datasheet

15

Vꢀ2.1

2017-09-21

Trademarks

Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.

ꢀ

Publishedꢀby

InfineonꢀTechnologiesꢀAG

81726ꢀMünchen,ꢀGermany

AllꢀRightsꢀReserved.

ImportantꢀNotice

Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics

(“Beschaffenheitsgarantie”).ꢀWithꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀany

informationꢀregardingꢀtheꢀapplicationꢀofꢀtheꢀproduct,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀand

liabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitationꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthird

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Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis

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InfineonꢀTechnologiesꢀofficeꢀ(www.infineon.com).

PleaseꢀnoteꢀthatꢀthisꢀproductꢀisꢀnotꢀqualifiedꢀaccordingꢀtoꢀtheꢀAECꢀQ100ꢀorꢀAECꢀQ101ꢀdocumentsꢀofꢀtheꢀAutomotive

ElectronicsꢀCouncil.

Warnings

Dueꢀtoꢀtechnicalꢀrequirementsꢀproductsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion

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型号：	IKFW50N60DH3E
厂家：	Infineon
描述：	IGBT HighSpeed 3 双极性晶体管
文件：	总16页 (文件大小：2000K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IKFW50N60DH3E [INFINEON]

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