IKP20N65F5 [INFINEON]
IGBT TRENCHSTOP™ 5;
| 型号： | IKP20N65F5 |
| 厂家： | 
Infineon |
| 描述： | IGBT TRENCHSTOP™ 5 双极性晶体管 |
| 文件： | 总17页 (文件大小：2290K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT
Highꢀspeedꢀ5ꢀFASTꢀIGBTꢀinꢀTRENCHSTOPTMꢀ5ꢀtechnologyꢀcopackedꢀwithꢀRAPIDꢀ1
fastꢀandꢀsoftꢀantiꢀparallelꢀdiode
IKP20N65F5
650VꢀDuoPackꢀIGBTꢀandꢀDiode
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
Dataꢀsheet
IndustrialꢀPowerꢀControl
IKP20N65F5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
Highꢀspeedꢀ5ꢀFASTꢀIGBTꢀinꢀTRENCHSTOPTMꢀ5ꢀtechnologyꢀcopackedꢀwith
RAPIDꢀ1ꢀfastꢀandꢀsoftꢀantiꢀparallelꢀdiode
ꢀ
C
FeaturesꢀandꢀBenefits:
HighꢀspeedꢀF5ꢀtechnologyꢀoffering
•ꢀBest-in-Classꢀefficiencyꢀinꢀhardꢀswitchingꢀandꢀresonant
topologies
•ꢀ650Vꢀbreakdownꢀvoltage
•ꢀLowꢀQg
G
E
•ꢀIGBTꢀcopackedꢀwithꢀRAPIDꢀ1ꢀfastꢀandꢀsoftꢀantiparallelꢀdiode
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
http://www.infineon.com/igbt/
C
Applications:
•ꢀSolarꢀconverters
•ꢀUninterruptibleꢀpowerꢀsupplies
•ꢀWeldingꢀconverters
•ꢀMidꢀtoꢀhighꢀrangeꢀswitchingꢀfrequencyꢀconverters
G
C
E
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.6V 175°C
Marking
Package
IKP20N65F5
650V
20A
K20EF5
PG-TO220-3
2
Rev.ꢀ2.1,ꢀꢀ2014-06-11
IKP20N65F5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
3
Rev.ꢀ2.1,ꢀꢀ2014-06-11
IKP20N65F5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
650
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°C
TCꢀ=ꢀ100°C
IC
42.0
21.0
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
60.0
60.0
A
A
Turn off safe operating area
VCEꢀ≤ꢀ650V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs
-
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°C
TCꢀ=ꢀ100°C
IF
20.0
10.0
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
60.0
A
V
Gate-emitter voltage
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)
±20
±30
PowerꢀdissipationꢀTCꢀ=ꢀ25°C
PowerꢀdissipationꢀTCꢀ=ꢀ100°C
125.0
63.0
Ptot
W
Operating junction temperature
Storage temperature
Tvj
-40...+175
-55...+150
°C
°C
Tstg
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
ThermalꢀResistance
Parameter
Symbol Conditions
Max.ꢀValue
Unit
Characteristic
IGBT thermal resistance,
junction - case
Rth(j-c)
Rth(j-c)
Rth(j-a)
1.20
2.20
62
K/W
K/W
K/W
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
4
Rev.ꢀ2.1,ꢀꢀ2014-06-11
IKP20N65F5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.20mA
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ20.0A
Tvjꢀ=ꢀ25°C
Collector-emitter saturation voltage VCEsat
Tvjꢀ=ꢀ125°C
650
-
-
V
V
-
-
-
1.60 2.10
1.80
1.90
-
-
Tvjꢀ=ꢀ175°C
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ10.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ125°C
Tvjꢀ=ꢀ175°C
-
-
-
1.45 1.80
Diode forward voltage
VF
V
V
1.40
1.40
-
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ0.20mA,ꢀVCEꢀ=ꢀVGE
3.2
4.0
4.8
VCEꢀ=ꢀ650V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Zero gate voltage collector current ICES
-
-
-
-
40.0 µA
4000.0
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ20.0A
-
-
-
100
-
nA
S
24.0
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
1200
30
-
-
-
Output capacitance
Coes
Cres
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
5
VCCꢀ=ꢀ520V,ꢀICꢀ=ꢀ20.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
LE
-
-
48.0
7.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
20
11
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ10.0A,
VGEꢀ=ꢀ0.0/15.0V,
rGꢀ=ꢀ32.0Ω,ꢀLσꢀ=ꢀ30nH,
Cσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
165
17
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.16
0.06
0.22
mJ
mJ
mJ
Turn-off energy
Total switching energy
5
Rev.ꢀ2.1,ꢀꢀ2014-06-11
IKP20N65F5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
18
3
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ2.0A,
VGEꢀ=ꢀ0.0/15.0V,
rGꢀ=ꢀ32.0Ω,ꢀLσꢀ=ꢀ30nH,
Cσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
170
30
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Ets
0.04
0.02
0.06
mJ
mJ
mJ
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
53
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ10.0A,
diF/dtꢀ=ꢀ1300A/µs
Qrr
0.28
10.5
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-235
-
A/µs
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
25
0.12
8.1
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ2.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ1000A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-630
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
19
13
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ150°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ10.0A,
VGEꢀ=ꢀ0.0/15.0V,
rGꢀ=ꢀ32.0Ω,ꢀLσꢀ=ꢀ30nH,
Cσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
200
11
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.26
0.11
0.37
mJ
mJ
mJ
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
16
4
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ150°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ2.0A,
VGEꢀ=ꢀ0.0/15.0V,
rGꢀ=ꢀ32.0Ω,ꢀLσꢀ=ꢀ30nH,
Cσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
230
43
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Ets
0.07
0.02
0.09
mJ
mJ
mJ
6
Rev.ꢀ2.1,ꢀꢀ2014-06-11
IKP20N65F5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
87
-
-
-
ns
µC
A
Tvjꢀ=ꢀ150°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ10.0A,
Qrr
0.63
13.1
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ1000A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-186
-
A/µs
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
45
-
-
-
ns
µC
A
Tvjꢀ=ꢀ150°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ2.0A,
Qrr
0.29
11.3
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ800A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-440
-
A/µs
7
Rev.ꢀ2.1,ꢀꢀ2014-06-11
IKP20N65F5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
100
10
1
130
120
110
100
90
80
DC
70
60
50
40
30
20
10
0.1
0
1
10
100
1000
25
50
75
100
125
150
175
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1. Forwardꢀbiasꢀsafeꢀoperatingꢀarea
(D=0,ꢀTC=25°C,ꢀTvj≤175°C;ꢀVGE=15V.
RecommendedꢀuseꢀatꢀVGE≥7.5V)
Figure 2. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
temperature
(Tvj≤175°C)
45
40
35
30
25
20
15
10
5
60
55
50
VGE=18V
45
15V
40
12V
35
10V
30
25
20
15
10
5
8V
7V
6V
5V
0
0
25
50
75
100
125
150
175
0
1
2
3
4
5
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
Figure 4. Typicalꢀoutputꢀcharacteristic
(Tvj=25°C)
(VGE≥15V,ꢀTvj≤175°C)
8
Rev.ꢀ2.1,ꢀꢀ2014-06-11
IKP20N65F5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
60
55
50
45
40
35
30
25
20
15
10
5
60
55
50
45
40
35
30
25
20
15
10
5
Tj=25°C
Tj=150°C
VGE=18V
15V
12V
10V
8V
7V
6V
5V
4V
0
0
0
1
2
3
4
5
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 5. Typicalꢀoutputꢀcharacteristic
(Tvj=150°C)
Figure 6. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
2.00
IC=5A
IC=10A
IC=20A
1.75
1.50
1.25
1.00
0.75
0.50
100
td(off)
tf
td(on)
tr
10
1
0
25
50
75
100
125
150
175
0
5
10 15 20 25 30 35 40 45 50 55 60
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 7. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
aꢀfunctionꢀofꢀjunctionꢀtemperature
collectorꢀcurrent
(VGE=15V)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=15/0V,ꢀrG=32Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
9
Rev.ꢀ2.1,ꢀꢀ2014-06-11
IKP20N65F5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
1000
100
10
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
100
10
1
1
10 20 30 40 50 60 70 80 90 100 110 120
25
50
75
100
125
150
175
rG,ꢀGATEꢀRESISTORꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate Figure 10. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
resistor
junctionꢀtemperature
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=15/0V,ꢀIC=10A,Dynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=15/0V,
IC=10A,ꢀrG=32Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
6
5
4
3
2
1
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
typ.
min.
max.
Eoff
Eon
Ets
0
25
50
75
100
125
150
0
5
10 15 20 25 30 35 40 45 50 55 60
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 11. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
ofꢀjunctionꢀtemperature
(IC=0.2mA)
functionꢀofꢀcollectorꢀcurrent
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=15/0V,ꢀrG=32Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
10
Rev.ꢀ2.1,ꢀꢀ2014-06-11
IKP20N65F5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
Eoff
Eon
Ets
Eoff
Eon
Ets
10 20 30 40 50 60 70 80 90 100 110 120
25
50
75
100
125
150
175
rG,ꢀGATEꢀRESISTORꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistor
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=15/0V,
IC=10A,ꢀrG=32Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=15/0V,ꢀIC=10A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
0.50
16
Eoff
Eon
130V
520V
0.45
Ets
14
12
10
8
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
6
4
2
0
200
250
300
350
400
450
500
0
5
10 15 20 25 30 35 40 45 50
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
QGE,ꢀGATEꢀCHARGEꢀ[nC]
Figure 15. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀTvj=150°C,ꢀVGE=15/0V,
IC=10A,ꢀrG=32Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
Figure 16. Typicalꢀgateꢀcharge
(IC=20A)
11
Rev.ꢀ2.1,ꢀꢀ2014-06-11
IKP20N65F5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
1E+4
1000
100
10
Cies
Coes
Cres
1
D=0.5
0.2
0.1
0.05
0.1
0.02
0.01
single pulse
0.01
i:
1
2
3
4
ri[K/W]: 0.2392053 0.410959 0.4430167 0.1066175
τi[s]:
1.4E-4
1.2E-3
0.01493292 0.1213884
1
0.001
1E-7
0
5
10
15
20
25
30
1E-6
1E-5
1E-4
0.001
0.01
0.1
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 17. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
Figure 18. IGBTꢀtransientꢀthermalꢀimpedance
(D=tp/T)
(VGE=0V,ꢀf=1MHz)
130
Tj=25°C, IF = 10A
Tj=150°C, IF = 10A
120
1
110
100
90
D=0.5
0.2
0.1
0.05
0.1
0.02
0.01
80
single pulse
70
60
0.01
50
40
i:
ri[K/W]: 0.2955981 0.7867872 0.7353328 0.3659654
τi[s]: 8.9E-5 6.5E-4 5.5E-3 0.05080561
1
2
3
4
0.001
1E-7
30
300
1E-6
1E-5
1E-4
0.001
0.01
0.1
700
1100
1500
1900
2300
2700
tp,ꢀPULSEꢀWIDTHꢀ[s]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 19. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
Figure 20. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀpulseꢀwidth
(D=tp/T)
(VR=400V)
12
Rev.ꢀ2.1,ꢀꢀ2014-06-11
IKP20N65F5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
18
16
14
12
10
8
Tj=25°C, IF = 10A
Tj=150°C, IF = 10A
Tj=25°C, IF = 10A
Tj=150°C, IF = 10A
6
4
2
0
300
700
1100
1500
1900
2300
2700
300
700
1100
1500
1900
2300
2700
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
Figure 22. Typicalꢀpeakꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
0
40
Tj=25°C, IF = 10A
Tj=25°C
Tj=150°C, IF = 10A
Tj=150°C
-50
35
30
25
20
15
10
5
-100
-150
-200
-250
-300
-350
-400
-450
-500
0
300
700
1100
1500
1900
2300
2700
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Figure 23. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
Figure 24. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage
(VR=400V)
13
Rev.ꢀ2.1,ꢀꢀ2014-06-11
IKP20N65F5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
2.00
1.75
1.50
1.25
1.00
0.75
IF=10A
IF=20A
IF=40A
25
50
75
100
125
150
175
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 25. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
14
Rev.ꢀ2.1,ꢀꢀ2014-06-11
IKP20N65F5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
PG-TO220-3
15
Rev.ꢀ2.1,ꢀꢀ2014-06-11
IKP20N65F5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
vGE(t)
90% VGE
a
b
a
b
10% VGE
t
iC(t)
90% IC
10% IC
90% IC
10% IC
t
vCE(t)
t
t
td(off)
tf
td(on)
tr
vGE(t)
90% VGE
10% VGE
t
iC(t)
CC
2% IC
t
vCE(t)
t2
t4
E
=
VCE x IC x dt
E
=
on
VCE x IC x dt
off
∫
∫
2% VCE
t1
t3
t
t1
t2
t3
t4
16
Rev.ꢀ2.1,ꢀꢀ2014-06-11
IKP20N65F5
High speed switching series fifth generation
Revision History
IKP20N65F5
Revision: 2014-06-11, Rev. 2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.1
2014-06-11 Final data sheet
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© 2014 Infineon Technologies AG
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17
Rev. 2.1, 2014-06-11
相关型号：
IKP20N65F5XKSA1
Insulated Gate Bipolar Transistor, 42A I(C), 650V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN
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