IKQ120N120CS7 [INFINEON]
TRENCHSTOP™ IGBT7;型号: | IKQ120N120CS7 |
厂家: | Infineon |
描述: | TRENCHSTOP™ IGBT7 双极性晶体管 |
文件: | 总17页 (文件大小:1571K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IKQ120N120CS7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology copacked with soft fast recovery Emitter
Controlled 7 diode
Features
• VCE = 1200 V
• IC = 120 A
• IGBT co-packed with full current, sof and low Qrr diode
• Low saturation voltage VCEsat = 2.0 V at Tvj = 175°C
• Optimized for hard switching topologies (2-L inverter, 3-L NPC T-type, ...)
• Short circuit ruggedness 8 µs
• Wide range of dv/dt controllability
• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/
Potential applications
• Industrial drives
• Industrial power supplies
• Solar inverters
Product validation
• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
Description
C
G
E
Type
Package
Marking
IKQ120N120CS7
PG-TO247-3-PLUS-NN3.7
K120MCS7
Datasheet
www.infineon.com
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.10
2023-01-23
IKQ120N120CS7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
2
3
4
5
6
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Datasheet
2
Revision 1.10
2023-01-23
IKQ120N120CS7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
1 Package
1
Package
Table 1
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
13
Unit
Min.
Max.
Internal emitter
inductance measured 5
mm (0.197 in.) from case
LE
nH
Storage temperature
Soldering temperature
Tstg
-55
150
260
°C
°C
Tsold
wave soldering 1.6 mm (0.063 in.) from case
for 10 s
Thermal resistance,
junction-ambient
Rth(j-a)
Rth(j-c)
Rth(j-c)
40
K/W
K/W
K/W
IGBT thermal resistance,
junction-case
0.11
0.21
0.15
0.29
Diode thermal resistance,
junction-case
2
IGBT
Table 2
Maximum rated values
Symbol Note or test condition
Parameter
Values
1200
216
Unit
Collector-emitter voltage
VCE
Tvj ≥ 25 °C
V
A
DC collector current,
limited by Tvjmax
IC
limited by bondwire
Tc = 25 °C
Tc = 100 °C
144
Pulsed collector current, tp
limited by Tvjmax
ICpulse
360
A
A
Turn-off safe operating
area
VCE ≤ 1200 V, Tvj ≤ 175 °C
tp ≤ 0.5 µs, D < 0.001
360
Gate-emitter voltage
VGE
VGE
20
25
V
V
Transient gate-emitter
voltage
Short-circuit withstand
time
tSC
VCC ≤ 600 V, VGE = 15 V, Allowed number of
short circuits < 1000, Time between short
circuits ≥ 1.0 s, Tvj = 150 °C
8
µs
W
Power dissipation
Ptot
Tvj ≤ 175 °C
Tc = 25 °C
1004
502
Tc = 100 °C
Datasheet
3
Revision 1.10
2023-01-23
IKQ120N120CS7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
2 IGBT
Table 3
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
1.65
2
Unit
Min.
Max.
Collector-emitter
saturation voltage
VCEsat IC = 120 A, VGE = 15 V
Tvj = 25 °C
2
V
Tvj = 175 °C
Gate-emitter threshold
voltage
VGEth
ICES
IC = 2.34 mA, VCE = VGE
VCE = 1200 V, VGE = 0 V
5.1
5.7
6.5
40
V
Zero gate-voltage collector
current
Tvj = 25 °C
µA
Tvj = 175 °C
10400
Gate-emitter leakage
current
IGES
VCE = 0 V, VGE = 20 V
100
nA
Transconductance
gfs
ISC
IC = 120 A, VCE = 20 V, Tvj = 175 °C
51
S
A
Short-circuit collector
current
VCC ≤ 600 V, VGE = 15 V, tSC ≤ 8 µs, Allowed
number of short circuits < 1000, Time
between short circuits ≥ 1.0 s, Tvj = 150 °C
720
Input capacitance
Output capacitance
Cies
Coes
Cres
VCE = 25 V, VGE = 0 V, f = 100 kHz
VCE = 25 V, VGE = 0 V, f = 100 kHz
VCE = 25 V, VGE = 0 V, f = 100 kHz
17.3
325
80
nF
pF
pF
Reverse transfer
capacitance
Gate charge
QG
IC = 120 A, VGE = 15 V, VCC = 960 V
710
44
nC
ns
Turn-on delay time
td(on)
VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C,
RG(on) = 1.3 Ω,
RG(off) = 1.3 Ω
IC = 120 A
Tvj = 175 °C,
IC = 120 A
42
34
Rise time (inductive load)
Turn-off delay time
tr
td(off)
tf
VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C,
ns
ns
RG(on) = 1.3 Ω,
RG(off) = 1.3 Ω
IC = 120 A
Tvj = 175 °C,
IC = 120 A
35
VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C,
215
256
106
200
10.3
12.6
RG(on) = 1.3 Ω,
RG(off) = 1.3 Ω
IC = 120 A
Tvj = 175 °C,
IC = 120 A
Fall time (inductive load)
Turn-on energy
VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C,
ns
RG(on) = 1.3 Ω,
RG(off) = 1.3 Ω
IC = 120 A
Tvj = 175 °C,
IC = 120 A
Eon
VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C,
mJ
RG(on) = 1.3 Ω,
RG(off) = 1.3 Ω
IC = 120 A
Tvj = 175 °C,
IC = 120 A
(table continues...)
Datasheet
4
Revision 1.10
2023-01-23
IKQ120N120CS7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
3 Diode
Table 3
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
Unit
Min.
Max.
Turn-off energy
Eoff
Ets
Tvj
VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C,
5.72
mJ
RG(on) = 1.3 Ω,
RG(off) = 1.3 Ω
IC = 120 A
Tvj = 175 °C,
IC = 120 A
9.5
Total switching energy
VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C,
16.1
22.1
mJ
°C
RG(on) = 1.3 Ω,
RG(off) = 1.3 Ω
IC = 120 A
Tvj = 175 °C,
IC = 120 A
Operating junction
temperature
-40
175
Note:
Electrical Characteristic, at Tvj = 25°C, unless otherwise specified.
3
Diode
Table 4
Maximum rated values
Parameter
Symbol Note or test condition
Values
192
Unit
Diode forward current,
limited by Tvjmax
IF
limited by bondwire
Tc = 25 °C
A
Tc = 100 °C
125
Diode pulsed current, tp
limited by Tvjmax
IFpulse
Ptot
360
A
Power dissipation
Tc = 25 °C
525
263
W
Tc = 100 °C
Table 5
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
1.65
1.6
Unit
V
Min.
Max.
Diode forward voltage
VF
IF = 120 A
Tvj = 25 °C
2.15
Tvj = 175 °C
Diode reverse recovery
time
trr
VR = 600 V, RG(on) = 1.3 Ω Tvj = 25 °C,
IF = 120 A
205
ns
Tvj = 175 °C,
IF = 120 A
311
8.35
14.9
Diode reverse recovery
charge
Qrr
VR = 600 V, RG(on) = 1.3 Ω Tvj = 25 °C,
IF = 120 A
µC
Tvj = 175 °C,
IF = 120 A
(table continues...)
Datasheet
5
Revision 1.10
2023-01-23
IKQ120N120CS7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
3 Diode
Table 5
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
65
Unit
Min.
Max.
Diode peak reverse
recovery current
Irrm
VR = 600 V, RG(on) = 1.3 Ω Tvj = 25 °C,
A
IF = 120 A
Tvj = 175 °C,
IF = 120 A
79
Diode peak rate of fall of
reverse recovery current
dirr/dt VR = 600 V, RG(on) = 1.3 Ω Tvj = 25 °C,
IF = 120 A
-391
-302
2.61
5.1
A/µs
mJ
°C
Tvj = 175 °C,
IF = 120 A
Reverse recovery energy
Erec
VR = 600 V, RG(on) = 1.3 Ω Tvj = 25 °C,
IF = 120 A
Tvj = 175 °C,
IF = 120 A
Operating junction
temperature
Tvj
-40
175
Note:
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of
the maximum ratings stated in this datasheet.
Dynamic test circuit, parasitic inductance L = 30 nH, C = 18 pF.
σ
σ
Datasheet
6
Revision 1.10
2023-01-23
IKQ120N120CS7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
4 Characteristics diagrams
4
Characteristics diagrams
Reverse bias safe operating area
IC = f(VCE
Typical output characteristic
IC = f(VCE
)
)
Tvj ≤ 175 °C, VCE ≤ 1200 V
Tvj = 25 °C
1000
360
300
240
180
120
60
100
10
1
0.1
0
1
10
100
1000
0
1
2
3
4
5
Typical output characteristic
IC = f(VCE
Typical transfer characteristic
IC = f(VGE
)
)
Tvj = 175 °C
VCE = 20 V
360
360
300
240
180
120
60
300
240
180
120
60
0
0
0
1
2
3
4
5
4
6
8
10
12
14
16
Datasheet
7
Revision 1.10
2023-01-23
IKQ120N120CS7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
4 Characteristics diagrams
Typical collector-emitter saturation voltage as a
function of junction temperature
VCEsat = f(Tvj)
Gate-emitter threshold voltage as a function of
junction temperature
VGEth = f(Tvj)
VGE = 15 V
IC = 2.34 mA
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
8
7
6
5
4
3
25
50
75
100
125
150
175
25
50
75
100
125
150
Typical switching times as a function of collector
current
t = f(IC)
Typical switching times as a function of gate resistor
t = f(RG)
IC = 120 A, VCC = 600 V, Tvj = 175 °C, VGE = 0/15 V
VCC = 600 V, Tvj = 175 °C, VGE = 0/15 V, RG = 1.3 Ω
10000
1000
100
10
1000
100
10
1
0
50
100
150
200
250
1
2
3
4
5
6
7
8
9
10 11
Datasheet
8
Revision 1.10
2023-01-23
IKQ120N120CS7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
4 Characteristics diagrams
Typical switching times as a function of junction
temperature
Typical switching energy losses as a function of
collector current
t = f(Tvj)
E = f(IC)
IC = 120 A, VCC = 600 V, VGE = 0/15 V, RG = 1.3 Ω
VCC = 600 V, Tvj = 175 °C, VGE = 0/15 V, RG = 1.3 Ω
1000
100
10
60
50
40
30
20
10
0
25
50
75
100
125
150
175
0
30
60
90
120 150 180 210 240
Typical switching energy losses as a function of gate
resistor
Typical switching energy losses as a function of
junction temperature
E = f(RG)
E = f(Tvj)
IC = 120 A, VCC = 600 V, Tvj = 175 °C, VGE = 0/15 V
IC = 120 A, VCC = 600 V, VGE = 0/15 V, RG = 1.3 Ω
35
30
25
20
15
10
5
25
20
15
10
5
0
0
25
50
75
100
125
150
175
1
2
3
4
5
6
7
8
9
10 11
Datasheet
9
Revision 1.10
2023-01-23
IKQ120N120CS7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
4 Characteristics diagrams
Typical switching energy losses as a function of
collector emitter voltage
Typical gate charge
VGE = f(QG)
IC = 120 A
E = f(VCE
)
IC = 120 A, Tvj = 175 °C, VGE = 0/15 V, RG = 1.3 Ω
35
16
14
12
10
8
30
25
20
15
10
5
6
4
2
0
0
0
400 450 500 550 600 650 700 750 800
100 200 300 400 500 600 700 800
Typical capacitance as a function of collector-emitter Typical short circuit collector current as a function of
voltage
C = f(VCE
gate-emitter voltage
IC(SC) = f(VGE
)
)
f = 100 kHz, VGE = 0 V
Tvj = 150 °C, VCC ≤ 600 V
800
700
600
500
400
300
200
100
10000
1000
100
10
1
0
5
10
15
20
25
30
12
13
14
15
16
17
Datasheet
10
Revision 1.10
2023-01-23
IKQ120N120CS7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
4 Characteristics diagrams
Short circuit withstand time as a function of gate-
emitter voltage
IGBT transient thermal impedance as a function of
pulse width
Zth(j-c) = f(tp)
D = tp/T
tSC = f(VGE
)
Tvj ≤ 150 °C, VCC ≤ 600 V
14
1
13
12
11
10
9
0.1
0.01
0.001
0.0001
1E-5
8
7
6
5
4
1E-6
1E-5 0.0001 0.001
0.01
0.1
1
12
13
14
15
16
17
Diode transient thermal impedance as a function of
pulse width
Typical diode forward current as a function of forward
voltage
Zth(j-c) = f(tp)
IF = f(VF)
D = tp/T
1
0.1
300
250
200
150
100
50
0.01
0.001
0.0001
0
1E-6
1E-5 0.0001 0.001
0.01
0.1
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Datasheet
11
Revision 1.10
2023-01-23
IKQ120N120CS7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
4 Characteristics diagrams
Typical diode forward voltage as a function of
junction temperature
Typical diode current slope as a function of gate
resistor
VF = f(Tvj)
diF/dt = f(RG)
VR = 600 V, IF = 120 A
3.00
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
2250
2000
1750
1500
1250
1000
750
500
25
50
75
100
125
150
175
1
2
3
4
5
6
7
8
9
10 11
Typical reverse recovery time as a function of diode
current slope
Typical reverse recovery charge as a function of diode
current slope
trr = f(diF/dt)
Qrr = f(diF/dt)
VR = 600 V, IF = 120 A
VR = 600 V, IF = 120 A
500
450
400
350
300
250
200
150
18
16
14
12
10
8
6
500
750 1000 1250 1500 1750 2000 2250
500
750
1000 1250 1500 1750 2000 2250
Datasheet
12
Revision 1.10
2023-01-23
IKQ120N120CS7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
4 Characteristics diagrams
Typical reverse recovery current as a function of diode Typical diode peak rate of fall of reverse recovery
current slope
Irrm = f(diF/dt)
current as a function of diode current slope
dirr/dt = f(diF/dt)
VR = 600 V, IF = 120 A
VR = 600 V, IF = 120 A
85
80
75
70
65
60
55
50
45
40
35
-100
-150
-200
-250
-300
-350
-400
-450
500
750
1000 1250 1500 1750 2000 2250
500
750 1000 1250 1500 1750 2000 2250
Typical reverse energy losses as a function of diode
current slope
Erec = f(diF/dt)
VR = 600 V, IF = 120 A
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
500
1000
1500
2000
2500
Datasheet
13
Revision 1.10
2023-01-23
IKQ120N120CS7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
5 Package outlines
5
Package outlines
PG-TO247-3-PLUS-NN3.7
PACKAGE - GROUP
NUMBER:
PG-TO247-3-U01
MILLIMETERS
DIMENSIONS
MIN.
4.90
2.31
1.90
1.16
---
MAX.
5.10
2.51
2.10
1.26
2.25
2.06
3.25
3.06
0.66
21.10
16.85
1.35
0.78
15.90
13.50
1.55
A
A1
A2
b
b1
b2
b3
b4
c
1.96
---
2.96
0.59
20.90
16.25
1.05
0.58
15.70
13.10
1.35
D
D1
D2
D3
E
E1
E2
e
5.44 (BSC)
N
3
L
19.80
3.90
1.90
20.10
4.30
2.10
L1
R
Figure 1
Datasheet
14
Revision 1.10
2023-01-23
IKQ120N120CS7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
6 Testing conditions
6
Testing conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCC
t1
t3
t
t1
t2
t3
t4
Figure B.
Figure 2
Datasheet
15
Revision 1.10
2023-01-23
IKQ120N120CS7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
Revision history
Revision history
Document revision
Date of release Description of changes
0.10
1.00
1.10
2022-05-04
2022-12-05
2023-01-23
Target datasheet
Final datasheet
Correction of boundary condition of diagrams IC(SC) = f(VGE) and tSC
=
f(VGE
)
Change of product outline drawing on page 14
Datasheet
16
Revision 1.10
2023-01-23
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2023-01-23
Published by
Infineon Technologies AG
81726 Munich, Germany
Important notice
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
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Document reference
IFX-ABB796-003
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