IKZ50N65ES5 [INFINEON]

IGBT TRENCHSTOP™ 5;
IKZ50N65ES5
型号: IKZ50N65ES5
厂家: Infineon    Infineon
描述:

IGBT TRENCHSTOP™ 5

双极性晶体管
文件: 总16页 (文件大小:1842K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
IKZ50N65ES5  
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT  
TRENCHSTOPTMꢀ5ꢀhighꢀspeedꢀsoftꢀswitchingꢀIGBTꢀcopackedꢀwithꢀfullꢀcurrent  
ratedꢀRAPIDꢀ1ꢀfastꢀandꢀsoftꢀantiparallelꢀdiode  
FeaturesꢀandꢀBenefits:  
HighꢀspeedꢀS5ꢀtechnologyꢀoffering  
•ꢀHighꢀspeedꢀsmoothꢀswitchingꢀdeviceꢀforꢀhardꢀ&ꢀsoftꢀswitching  
•ꢀVeryꢀLowꢀVCEsat,ꢀ1.42Vꢀatꢀnominalꢀcurrent  
•ꢀPlugꢀandꢀplayꢀreplacementꢀofꢀpreviousꢀgenerationꢀIGBTs  
•ꢀ650Vꢀbreakdownꢀvoltage  
•ꢀLowꢀgateꢀchargeꢀQG  
•ꢀIGBTꢀcopackedꢀwithꢀfullꢀratedꢀRAPIDꢀ1ꢀfastꢀantiparallelꢀdiode  
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C  
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀtargetꢀapplications  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:  
http://www.infineon.com/igbt/  
Applications:  
•ꢀIndustrialꢀUPS  
•ꢀIndustrialꢀSMPS  
•ꢀEnergyꢀStorage  
•ꢀCharger  
•ꢀWelding  
ProductꢀValidation:  
Qualifiedꢀforꢀapplicationsꢀlistedꢀaboveꢀbasedꢀonꢀtheꢀtest  
conditionsꢀinꢀtheꢀrelevantꢀtestsꢀofꢀJEDEC20/22  
Packageꢀpinꢀdefinition:  
•ꢀPinꢀCꢀ&ꢀbacksideꢀ-ꢀcollector  
•ꢀPinꢀEꢀ-ꢀemitter  
•ꢀPinꢀKꢀ-ꢀKelvinꢀemitter  
•ꢀPinꢀGꢀ-ꢀgate  
Pleaseꢀnote:ꢀTheꢀemitterꢀandꢀKelvinꢀemitterꢀpinsꢀareꢀnot  
exchangeable.ꢀTheirꢀexchangeꢀmightꢀleadꢀtoꢀmalfunction.  
KeyꢀPerformanceꢀandꢀPackageꢀParameters  
Type  
VCE  
IC  
VCEsat,ꢀTvj=25°C Tvjmax  
1.35V 175°C  
Marking  
Package  
IKZ50N65ES5  
650V  
50A  
K50EES5  
PG-TO247-4  
Datasheet  
www.infineon.com  
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument  
Vꢀ2.1  
2017-04-26  
IKZ50N65ES5  
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13  
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16  
Datasheet  
2
Vꢀ2.1  
2017-04-26  
IKZ50N65ES5  
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT  
MaximumꢀRatings  
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.  
Parameter  
Symbol  
Value  
Unit  
Collector-emitterꢀvoltage,ꢀTvjꢀ25°C  
VCE  
650  
V
1)  
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax  
TCꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire  
TCꢀ=ꢀ100°C  
IC  
80.0  
60.5  
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax  
ICpuls  
200.0  
200.0  
A
A
Turn off safe operating area  
VCEꢀ650V,ꢀTvjꢀ175°C,ꢀtpꢀ=ꢀ1µs  
-
1)  
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax  
TCꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire  
TCꢀ=ꢀ100°C  
IF  
80.0  
60.5  
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax  
IFpuls  
VGE  
200.0  
A
V
Gate-emitter voltage  
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ10µs,ꢀDꢀ<ꢀ0.010)  
±20  
±30  
PowerꢀdissipationꢀTCꢀ=ꢀ25°C  
PowerꢀdissipationꢀTCꢀ=ꢀ100°C  
274.0  
137.0  
Ptot  
W
Operating junction temperature  
Storage temperature  
Tvj  
-40...+175  
-55...+150  
°C  
°C  
Tstg  
Soldering temperature,  
wave soldering 1.6mm (0.063in.) from case for 10s  
°C  
260  
0.6  
Mounting torque, M3 screw  
Maximum of mounting processes: 3  
M
Nm  
ThermalꢀResistance  
Value  
min. typ. max.  
Parameter  
Symbol Conditions  
Unit  
RthꢀCharacteristics  
IGBT thermal resistance,  
junction - case  
Rth(j-C)  
Rth(j-C)  
Rth(j-a)  
-
-
-
-
-
-
0.55 K/W  
0.63 K/W  
40 K/W  
Diode thermal resistance,  
junction - case  
Thermal resistance  
junction - ambient  
1) value limited by bondwire  
Datasheet  
3
Vꢀ2.1  
2017-04-26  
IKZ50N65ES5  
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT  
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
StaticꢀCharacteristic  
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.20mA  
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ50.0A  
Tvjꢀ=ꢀ25°C  
Collector-emitter saturation voltage VCEsat  
Tvjꢀ=ꢀ125°C  
650  
-
-
V
V
-
-
-
1.35 1.70  
1.50  
1.60  
-
-
Tvjꢀ=ꢀ175°C  
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ50.0A  
Tvjꢀ=ꢀ25°C  
Tvjꢀ=ꢀ125°C  
Tvjꢀ=ꢀ175°C  
-
-
-
1.45 1.70  
Diode forward voltage  
VF  
V
1.42  
1.39  
-
-
Gate-emitter threshold voltage  
VGE(th)  
ICꢀ=ꢀ0.50mA,ꢀVCEꢀ=ꢀVGE  
3.2  
4.0  
4.8  
V
VCEꢀ=ꢀ650V,ꢀVGEꢀ=ꢀ0V  
Tvjꢀ=ꢀ25°C  
Tvjꢀ=ꢀ175°C  
Zero gate voltage collector current ICES  
-
-
-
50  
-
µA  
2000  
Gate-emitter leakage current  
Transconductance  
IGES  
gfs  
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V  
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ50.0A  
-
-
-
100  
-
nA  
S
62.0  
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
DynamicꢀCharacteristic  
Input capacitance  
Cies  
-
-
-
3100  
88  
-
-
-
Output capacitance  
Coes  
Cres  
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz  
pF  
Reverse transfer capacitance  
12  
VCCꢀ=ꢀ520V,ꢀICꢀ=ꢀ50.0A,  
VGEꢀ=ꢀ15V  
Gate charge  
QG  
LE  
-
-
120.0  
13.0  
-
-
nC  
nH  
Internal emitter inductance  
measured 5mm (0.197 in.) from  
case  
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
36  
22  
-
-
-
-
-
-
-
ns  
ns  
Tvjꢀ=ꢀ25°C,  
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ50.0A,  
VGEꢀ=ꢀ0.0/15.0V,  
RG(on)ꢀ=ꢀ23.1,ꢀRG(off)ꢀ=ꢀ23.1,  
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF  
Lσ,ꢀCσꢀfromꢀFig.ꢀE  
Energy losses include “tail” and  
diode reverse recovery.  
Turn-off delay time  
Fall time  
294  
32  
ns  
ns  
Turn-on energy  
Eon  
Eoff  
Ets  
0.77  
0.88  
1.65  
mJ  
mJ  
mJ  
Turn-off energy  
Total switching energy  
Datasheet  
4
Vꢀ2.1  
2017-04-26  
IKZ50N65ES5  
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
33  
14  
-
-
-
-
-
-
-
ns  
ns  
Tvjꢀ=ꢀ25°C,  
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ25.0A,  
VGEꢀ=ꢀ0.0/15.0V,  
RG(on)ꢀ=ꢀ23.1,ꢀRG(off)ꢀ=ꢀ23.1,  
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF  
Lσ,ꢀCσꢀfromꢀFig.ꢀE  
Energy losses include “tail” and  
diode reverse recovery.  
Turn-off delay time  
Fall time  
304  
33  
ns  
ns  
Turn-on energy  
Turn-off energy  
Total switching energy  
Eon  
Eoff  
Ets  
0.36  
0.32  
0.68  
mJ  
mJ  
mJ  
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C  
Diode reverse recovery time  
Diode reverse recovery charge  
trr  
-
-
-
62  
-
-
-
ns  
µC  
A
Tvjꢀ=ꢀ25°C,  
VRꢀ=ꢀ400V,  
IFꢀ=ꢀ50.0A,  
diF/dtꢀ=ꢀ2500A/µs  
Qrr  
1.40  
40.0  
Diode peak reverse recovery current Irrm  
Diode peak rate of fall of reverse  
recoveryꢀcurrentꢀduringꢀtb  
dirr/dt  
-
-1100  
-
A/µs  
Diode reverse recovery time  
Diode reverse recovery charge  
trr  
-
-
-
44  
-
-
-
ns  
µC  
A
Tvjꢀ=ꢀ25°C,  
VRꢀ=ꢀ400V,  
IFꢀ=ꢀ25.0A,  
diF/dtꢀ=ꢀ2500A/µs  
Qrr  
1.00  
38.5  
Diode peak reverse recovery current Irrm  
Diode peak rate of fall of reverse  
recoveryꢀcurrentꢀduringꢀtb  
dirr/dt  
-
-2200  
-
A/µs  
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
34  
26  
-
-
-
-
-
-
-
ns  
ns  
Tvjꢀ=ꢀ150°C,  
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ50.0A,  
VGEꢀ=ꢀ0.0/15.0V,  
RG(on)ꢀ=ꢀ23.1,ꢀRG(off)ꢀ=ꢀ23.1,  
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF  
Lσ,ꢀCσꢀfromꢀFig.ꢀE  
Energy losses include “tail” and  
diode reverse recovery.  
Turn-off delay time  
Fall time  
328  
38  
ns  
ns  
Turn-on energy  
Eon  
Eoff  
Ets  
1.00  
1.20  
2.20  
mJ  
mJ  
mJ  
Turn-off energy  
Total switching energy  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
32  
16  
-
-
-
-
-
-
-
ns  
ns  
Tvjꢀ=ꢀ150°C,  
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ25.0A,  
VGEꢀ=ꢀ0.0/15.0V,  
RG(on)ꢀ=ꢀ23.1,ꢀRG(off)ꢀ=ꢀ23.1,  
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF  
Lσ,ꢀCσꢀfromꢀFig.ꢀE  
Energy losses include “tail” and  
diode reverse recovery.  
Turn-off delay time  
Fall time  
354  
44  
ns  
ns  
Turn-on energy  
Turn-off energy  
Total switching energy  
Eon  
Eoff  
Ets  
0.64  
0.56  
1.20  
mJ  
mJ  
mJ  
Datasheet  
5
Vꢀ2.1  
2017-04-26  
IKZ50N65ES5  
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT  
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C  
Diode reverse recovery time  
Diode reverse recovery charge  
trr  
-
-
-
92  
-
-
-
ns  
µC  
A
Tvjꢀ=ꢀ150°C,  
VRꢀ=ꢀ400V,  
IFꢀ=ꢀ50.0A,  
Qrr  
3.20  
63.0  
Diode peak reverse recovery current Irrm  
diF/dtꢀ=ꢀ2500A/µs  
Diode peak rate of fall of reverse  
recoveryꢀcurrentꢀduringꢀtb  
dirr/dt  
-
-1100  
-
A/µs  
Diode reverse recovery time  
Diode reverse recovery charge  
trr  
-
-
-
68  
-
-
-
ns  
µC  
A
Tvjꢀ=ꢀ150°C,  
VRꢀ=ꢀ400V,  
IFꢀ=ꢀ25.0A,  
Qrr  
2.30  
59.0  
Diode peak reverse recovery current Irrm  
diF/dtꢀ=ꢀ2500A/µs  
Diode peak rate of fall of reverse  
recoveryꢀcurrentꢀduringꢀtb  
dirr/dt  
-
-1850  
-
A/µs  
Datasheet  
6
Vꢀ2.1  
2017-04-26  
IKZ50N65ES5  
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT  
275  
250  
225  
200  
175  
150  
125  
100  
75  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
50  
25  
0
25  
50  
75  
100  
125  
150  
175  
25  
50  
75  
100  
125  
150  
175  
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]  
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]  
Figure 1. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase  
Figure 2. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase  
temperature  
temperature  
(Tvj175°C)  
(VGE15V,ꢀTvj175°C)  
150  
150  
VGE = 20V  
VGE = 20V  
135  
120  
105  
90  
75  
60  
45  
30  
15  
0
135  
120  
105  
90  
75  
60  
45  
30  
15  
0
18V  
15V  
12V  
10V  
8V  
18V  
15V  
12V  
10V  
8V  
7V  
7V  
6V  
6V  
5V  
5V  
0
1
2
3
4
5
0
1
2
3
4
5
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
Figure 3. Typicalꢀoutputꢀcharacteristic  
(Tvj=25°C)  
Figure 4. Typicalꢀoutputꢀcharacteristic  
(Tvj=175°C)  
Datasheet  
7
Vꢀ2.1  
2017-04-26  
IKZ50N65ES5  
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT  
150  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
Tvj = 25°C  
Tvj = 150°C  
IC = 25A  
IC = 50A  
IC = 100A  
135  
120  
105  
90  
75  
60  
45  
30  
15  
0
2
3
4
5
6
7
8
9
10  
25  
50  
75  
100  
125  
150  
175  
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 5. Typicalꢀtransferꢀcharacteristic  
(VCE=20V)  
Figure 6. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas  
aꢀfunctionꢀofꢀjunctionꢀtemperature  
(VGE=15V)  
1000  
100  
10  
1000  
td(off)  
tf  
td(on)  
tr  
100  
10  
1
td(off)  
tf  
td(on)  
tr  
1
0
30  
60  
90  
120  
150  
0
10  
20  
30  
40  
50  
60  
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]  
RG,ꢀGATEꢀRESISTANCEꢀ[]  
Figure 7. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  
collectorꢀcurrent  
Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate  
resistance  
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,  
VGE=0/15V,ꢀRGon=23,1,ꢀRGoff=23,1,  
dynamic test circuit in Figure E)  
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,  
VGE=0/15V,ꢀIC=75A,ꢀdynamicꢀtestꢀcircuitꢀin  
Figure E)  
Datasheet  
8
Vꢀ2.1  
2017-04-26  
IKZ50N65ES5  
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT  
1000  
100  
10  
6
5
4
3
2
1
0
typ.  
min.  
max.  
td(off)  
tf  
td(on)  
tr  
1
25  
50  
75  
100  
125  
150  
175  
25  
50  
75  
100  
125  
150  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  
junctionꢀtemperature  
Figure 10. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction  
ofꢀjunctionꢀtemperature  
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,  
IC=75A,ꢀRGon=23,1,ꢀRGoff=23,1,ꢀdynamic  
test circuit in Figure E)  
(IC=0.5mA)  
9
5
Eoff  
Eon  
Ets  
Eoff  
Eon  
Ets  
8
7
6
5
4
3
2
1
0
4
3
2
1
0
0
30  
60  
90  
120  
150  
0
10  
20  
30  
40  
50  
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]  
RG,ꢀGATEꢀRESISTANCEꢀ[]  
Figure 11. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀcollectorꢀcurrent  
Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀgateꢀresistance  
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,  
VGE=0/15V,ꢀRGon=23,1,ꢀRGoff=23,1,  
dynamic test circuit in Figure E)  
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,  
VGE=0/15V,ꢀIC=75A,ꢀdynamicꢀtestꢀcircuitꢀin  
Figure E)  
Datasheet  
9
Vꢀ2.1  
2017-04-26  
IKZ50N65ES5  
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT  
3.0  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
Eoff  
Eon  
Ets  
Eoff  
Eon  
Ets  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
25  
50  
75  
100  
125  
150  
175  
200  
250  
300  
350  
400  
450  
500  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀjunctionꢀtemperature  
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀcollectorꢀemitterꢀvoltage  
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,  
(inductiveꢀload,ꢀTvj=150°C,ꢀVGE=0/15V,  
IC=75A,ꢀRGon=23,1,ꢀRGoff=23,1,ꢀdynamic  
test circuit in Figure E)  
IC=75A,ꢀRGon=23,1,ꢀRGoff=23,1,ꢀdynamic  
test circuit in Figure E)  
16  
14  
12  
10  
8
1E+4  
1000  
100  
10  
VCCꢀ=ꢀ130V  
VCCꢀ=ꢀ520V  
6
4
Cies  
Coes  
Cres  
2
0
1
0
20  
40  
60  
80  
100  
120  
0
5
10  
15  
20  
25  
30  
QGE,ꢀGATEꢀCHARGEꢀ[nC]  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
Figure 15. Typicalꢀgateꢀcharge  
(IC=75A)  
Figure 16. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof  
collector-emitterꢀvoltage  
(VGE=0V,ꢀf=1MHz)  
Datasheet  
10  
Vꢀ2.1  
2017-04-26  
IKZ50N65ES5  
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT  
1
1
D = 0.5  
D = 0.5  
0.2  
0.1  
0.1  
0.2  
0.1  
0.1  
0.05  
0.02  
0.01  
0.05  
0.02  
0.01  
single pulse  
single pulse  
0.01  
0.01  
i:  
ri[K/W]: 0.030556 0.137971 0.162007 0.15972 0.059746  
τi[s]: 2.4E-5 3.1E-4 3.1E-3 0.024936 0.134448  
1
2
3
4
5
i:  
1
2
3
4
ri[K/W]: 0.066623 0.198269 0.201696 0.163411  
τi[s]: 2.1E-5 3.7E-4 5.5E-3 0.057467  
0.001  
0.001  
1E-7 1E-6 1E-5 1E-4 0.001 0.01  
0.1  
1
1E-7 1E-6 1E-5 1E-4 0.001 0.01  
0.1  
1
tp,ꢀPULSEꢀWIDTHꢀ[s]  
tp,ꢀPULSEꢀWIDTHꢀ[s]  
Figure 17. IGBTꢀtransientꢀthermalꢀimpedance  
(D=tp/T)  
Figure 18. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa  
functionꢀofꢀpulseꢀwidth  
(D=tp/T)  
120  
4.5  
Tvj = 25°C, IF = 50A  
Tvj = 150°C, IF = 50A  
Tvj = 25°C, IF = 50A  
Tvj = 150°C, IF = 50A  
4.0  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
2000 2500 3000 3500 4000 4500 5000 5500  
2000 2500 3000 3500 4000 4500 5000 5500  
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  
Figure 19. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction Figure 20. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa  
ofꢀdiodeꢀcurrentꢀslope  
functionꢀofꢀdiodeꢀcurrentꢀslope  
(VR=400V)  
(VR=400V)  
Datasheet  
11  
Vꢀ2.1  
2017-04-26  
IKZ50N65ES5  
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT  
110  
0
-500  
Tvj = 25°C, IF = 50A  
Tvj = 150°C, IF = 50A  
100  
Tvj = 25°C, IF = 50A  
Tvj = 150°C, IF = 50A  
90  
80  
70  
60  
50  
40  
30  
-1000  
-1500  
-2000  
-2500  
-3000  
-3500  
20  
2000 2500 3000 3500 4000 4500 5000 5500  
2000 2500 3000 3500 4000 4500 5000 5500  
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  
Figure 21. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa  
functionꢀofꢀdiodeꢀcurrentꢀslope  
(VR=400V)  
Figure 22. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse  
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode  
currentꢀslope  
(VR=400V)  
150  
2.50  
Tvj = 25°C  
Tvj = 150°C  
IF = 25A  
IF = 50A  
135  
IF = 100A  
2.25  
120  
105  
90  
75  
60  
45  
30  
15  
0
2.00  
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
25  
50  
75  
100  
125  
150  
175  
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 23. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction Figure 24. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction  
ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature  
Datasheet  
12  
Vꢀ2.1  
2017-04-26  
IKZ50N65ES5  
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT  
Package Drawing PG-TO247-4  
Datasheet  
13  
Vꢀ2.1  
2017-04-26  
IKZ50N65ES5  
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT  
Testing Conditions  
VGE(t)  
I,V  
90% VGE  
trr = ta + tb  
dIF/dt  
Qrr = Qa + Qb  
a
b
10% VGE  
t
Qa  
Qb  
IC(t)  
dI  
90% IC  
90% IC  
10% IC  
10% IC  
Figure C. Definition of diode switching  
characteristics  
t
VCE(t)  
t
t
td(off)  
tf  
td(on)  
tr  
Figure A.  
VGE(t)  
90% VGE  
Figure D.  
10% VGE  
t
IC(t)  
CC  
2% IC  
t
VCE(t)  
Figure E. Dynamic test circuit  
Parasitic inductance L ,  
parasitic capacitor C ,  
s
s
relief capacitor C ,  
(only for ZVT switching)  
r
t2  
t4  
E
=
VCE x IC x dt  
E
=
VCE x IC x dt  
off  
on  
2% VCE  
t1  
t3  
t
t1  
t2  
t3  
t4  
Figure B.  
Datasheet  
14  
Vꢀ2.1  
2017-04-26  
IKZ50N65ES5  
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT  
RevisionꢀHistory  
IKZ50N65ES5  
Revision:ꢀ2017-04-26,ꢀRev.ꢀ2.1  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
2.1  
2017-04-26 Final data sheet  
Datasheet  
15  
Vꢀ2.1  
2017-04-26  
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG  
µHVIC™,ꢀµIPM™,ꢀµPFC™,ꢀAU-ConvertIR™,ꢀAURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCIPURSE™,ꢀCoolDP™,  
CoolGaN™,ꢀCOOLiR™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀDAVE™,ꢀDI-POL™,ꢀDirectFET™,ꢀDrBlade™,ꢀEasyPIM™,  
EconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀGaNpowIR™,  
HEXFET™,ꢀHITFET™,ꢀHybridPACK™,ꢀiMOTION™,ꢀIRAM™,ꢀISOFACE™,ꢀIsoPACK™,ꢀLEDrivIR™,ꢀLITIX™,ꢀMIPAQ™,  
ModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPowIRaudio™,ꢀPowIRStage™,ꢀPrimePACK™,  
PrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀSmartLEWIS™,ꢀSOLIDꢀFLASH™,ꢀSPOC™,  
StrongIRFET™,ꢀSupIRBuck™,ꢀTEMPFET™,ꢀTRENCHSTOP™,ꢀTriCore™,ꢀUHVIC™,ꢀXHP™,ꢀXMC™  
TrademarksꢀupdatedꢀNovemberꢀ2015  
OtherꢀTrademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀInfineonꢀTechnologiesꢀAGꢀ2017.  
AllꢀRightsꢀReserved.  
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