IMBG120R030M1H [INFINEON]
是采用D2PAK-7L (TO-263-7)封装的1200 V, 30 mΩ CoolSiC™ SiC MOSFET，它基于先进的沟槽工艺，该工艺经过优化，兼具性能与可靠性。它采用改良版1200V SMD封装，将CoolSiC技术的低功耗特性与.XT互联技术相结合，可在电机驱动、充电模块以及工业电源等应用中实现最高效率和被动制冷。;
| 型号： | IMBG120R030M1H |
| 厂家： | 
Infineon |
| 描述： | 是采用D2PAK-7L (TO-263-7)封装的1200 V, 30 mΩ CoolSiC™ SiC MOSFET，它基于先进的沟槽工艺，该工艺经过优化，兼具性能与可靠性。它采用改良版1200V SMD封装，将CoolSiC技术的低功耗特性与.XT互联技术相结合，可在电机驱动、充电模块以及工业电源等应用中实现最高效率和被动制冷。 电机 驱动 |
| 文件： | 总17页 (文件大小：1256K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IMBG120R030M1H
IMBG120R030M1H
CoolSiC™ 1200V SiC Trench MOSFET
with .XT interconnection technology
Features
Very low switching losses
Drain
TAB
Short circuit withstand time 3 µs
Fully controllable dV/dt
Gate
pin 1
Benchmark gate threshold voltage, VGS(th) = 4.5V
Robust against parasitic turn on, 0V turn-off gate voltage can be applied
Robust body diode for hard commutation
.XT interconnection technology for best-in-class thermal performance
Package creepage and clearance distance > 6.1mm
Sense pin for optimized switching performance
Sense
pin 2
Source
pin 3...7
Benefits
Efficiency improvement
Enabling higher frequency
Increased power density
Cooling effort reduction
Reduction of system complexity and cost
Potential applications
Drives
Infrastructure – Charger
Energy generation - Solar string inverter and solar optimizer
Industrial power supplies - Industrial UPS
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22
Note:
the source and sense pins are not exchangeable, their exchange might lead to malfunction
Table 1
Type
Key Performance and Package Parameters
VDS
ID
RDS(on
Tvj = 25°C, ID = 25A, VGS = 18V
Tvj,max
Marking
Package
PG-TO263-7
TC = 25°C, Rth(j-c,max)
IMBG120R030M1H 1200V
56A
30mΩ
175°C
12M1H030
Final Datasheet
Please read the Important Notice and Warnings at the end of this document
page 1 of 17
2.2
2020-12-11
www.infineon.com
IMBG120R030M1H
CoolSiC™ 1200V SiC Trench MOSFET
Table of contents
Table of contents
Features ........................................................................................................................................ 1
Benefits......................................................................................................................................... 1
Potential applications..................................................................................................................... 1
Product validation.......................................................................................................................... 1
Table of contents............................................................................................................................ 2
1
2
Maximum ratings ................................................................................................................... 3
Thermal resistances ............................................................................................................... 4
3
Electrical Characteristics ........................................................................................................ 5
Static characteristics...............................................................................................................................5
Dynamic characteristics..........................................................................................................................6
Switching characteristics........................................................................................................................7
3.1
3.2
3.3
4
5
6
Electrical characteristic diagrams ............................................................................................ 8
Package drawing...................................................................................................................14
Test conditions .....................................................................................................................15
Revision history.............................................................................................................................16
Final Datasheet
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IMBG120R030M1H
CoolSiC™ 1200V SiC Trench MOSFET
Maximum ratings
1
Maximum ratings
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the
maximum ratings stated in this datasheet.
Table 2
Maximum ratings
Parameter
Symbol
Value
Unit
V
Drain-source voltage, Tvj ≥ 25°C
VDSS
1200
DC drain current for Rth(j-c,max), limited by Tvjmax, VGS = 18V,
TC = 25°C
TC = 100°C
ID
56
47
A
A
1
Pulsed drain current, tp limited by Tvjmax, VGS = 18V
ID,pulse
169
DC body diode forward current for Rth(j-c,max)
,
limited by Tvjmax, VGS = 0V
TC = 25°C
TC = 100°C
ISD
A
A
V
56
36
1
Pulsed body diode current, tp limited by Tvjmax
Gate-source voltage2
ISD,pulse
169
Max transient voltage, < 1% duty cycle
Recommended turn-on gate voltage
Recommended turn-off gate voltage
Short-circuit withstand time
VDD = 800V, VDS,peak < 1200V, VGS,on = 15V, Tj,start = 25°C
Power dissipation, limited by Tvjmax
TC = 25°C
VGS
VGS,on
VGS,off
-7… 23
15… 18
0
µs
W
tSC
3
Ptot
300
150
TC = 100°C
°C
°C
Virtual junction temperature
Storage temperature
Tvj
-55… 175
-55… 150
Tstg
Soldering temperature
Reflow soldering (MSL1 according to JEDEC J-STD-020)
Tsold
260
°C
1 verified by design
2 Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior
of the device. The design guidelines described in Application Note AN2018-09 must be considered to ensure
sound operation of the device over the planned lifetime.
Final Datasheet
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IMBG120R030M1H
CoolSiC™ 1200V SiC Trench MOSFET
Thermal resistances
2
Thermal resistances
Table 3
Parameter
Value
Unit
Symbol Conditions
min.
typ.
0.38
max.
0.5
MOSFET/body diode
thermal resistance,
junction – case
Rth(j-c)
-
-
K/W
K/W
Thermal resistance,
junction – ambient
Rth(j-a)
leaded
-
62
Final Datasheet
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IMBG120R030M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical Characteristics
3
Electrical Characteristics
3.1
Static characteristics
Table 4
Static characteristics (at Tvj = 25°C, unless otherwise specified)
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
Drain-source on-state
resistance
RDS(on)
VGS = 18V, ID = 25A,
Tvj = 25°C
Tvj = 100°C
Tvj = 175°C
-
-
-
30
38
57
41
-
-
mΩ
VGS = 15V, ID = 25A,
Tvj = 25°C
-
39
52
Body diode forward
voltage
VSD
VGS = 0V, ISD = 25A
Tvj = 25°C
Tvj = 100°C
-
-
-
4.1
4.0
3.9
5.2
-
-
V
Tvj = 175°C
Gate-source threshold
voltage
VGS(th)
(tested after 1 ms pulse at
VGS = 20V)
ID = 11.5mA, VDS = VGS
Tvj = 25°C
Tvj =175°C
V
3.5
-
4.5
3.6
5.7
-
Zero gate voltage drain
current
IDSS
VGS = 0V, VDS = 1200V
Tvj = 25°C
Tvj = 175°C
-
-
-
-
-
-
1.1
3.4
-
200
-
µA
Gate-source leakage
current
IGSS
VGS = 23V, VDS = 0V
VGS = -7V, VDS = 0V
VDS = 20V, ID = 25A
f = 1MHz, VAC = 25mV
120
nA
nA
S
-
-120
Transconductance
gfs
14
3
-
-
Internal gate resistance
RG,int
Ω
Final Datasheet
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IMBG120R030M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical Characteristics
3.2
Dynamic characteristics
Table 5
Parameter
Dynamic characteristics (at Tvj = 25°C, unless otherwise specified)
Value
Symbol Conditions
Unit
min.
typ.
2290
105
11
max.
Input capacitance
Output capacitance
Reverse capacitance
Coss stored energy
Ciss
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Coss
Crss
Eoss
QG
pF
µJ
nC
VDD = 800V, VGS = 0V,
f = 1MHz, VAC = 25mV
44
63
Total gate charge
VDD = 800V, ID = 25A,
VGS = 0/18V, turn-on pulse
18
15
Gate to source charge
Gate to drain charge
QGS,pl
QGD
Final Datasheet
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IMBG120R030M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical Characteristics
3.3
Switching characteristics
Table 6
Switching characteristics, Inductive load 3
Symbol Conditions
Parameter
Value
Unit
min.
typ.
max.
MOSFET Characteristics, Tvj = 25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
VDD = 800V, ID = 25A,
VGS = 0/18V, RG,ext = 2Ω,
Lσ = 40nH,
diode:
body diode at VGS = 0V
see Fig. E
-
-
-
-
-
-
-
11
-
-
-
-
-
-
-
14
ns
µJ
Turn-off delay time
Fall time
25
11
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Etot
268
69
337
Body Diode Characteristics, Tvj = 25°C
Diode reverse recovery
charge
Qrr
VDD = 800V, ISD = 25A,
VGS at diode = 0V,
dif/dt= 1000A/µs,
Qrr includes also QC ,
see Fig. C
nC
A
-
-
300
5.8
-
-
Diode peak reverse
recovery current
Irrm
MOSFET Characteristics, Tvj = 175°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
VDD = 800V, ID = 25A,
VGS = 0/18V, RG,ext = 2Ω,
Lσ = 40nH,
diode:
body diode at VGS = 0V
see Fig. E
-
-
-
-
-
-
-
11
-
-
-
-
-
-
-
33
ns
µJ
Turn-off delay time
Fall time
25
11
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Etot
411
80
491
Body Diode Characteristics, Tvj = 175°C
Diode reverse recovery
charge
Qrr
VDD = 800V, ISD = 25A,
VGS at diode = 0V,
dif/dt= 1000A/µs,
Qrr includes also QC ,
see Fig. C
nC
A
-
-
375
8
-
-
Diode peak reverse
recovery current
Irrm
3 The chip technology was characterized up to 200 kV/µs. The measured dV/dt was limited by measurement test
setup and package.
Final Datasheet
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IMBG120R030M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
4
Electrical characteristic diagrams
180
150
120
90
350
300
250
200
150
100
50
not for linear use
60
30
0
0
0
25 50 75 100 125 150 175
0
400
800
1200
TC [ C]
VDS [V]
Figure 1
Safe operating area (SOA)
(VGS = 0/18V, Tc = 25°C, Tj ≤ 175°C)
Figure 2
Power dissipation as a function of case
temperature limited by bond wire
(Ptot = f(TC))
60
60
50
40
30
20
10
0
50
40
30
20
10
0
0
25 50 75 100 125 150 175
0
25 50 75 100 125 150 175
TC [ C]
TC [ C]
Figure 4
Maximum source to drain current as a
function of case temperature limited by
bond wire (ISD = f(TC), VGS = 0V)
Figure 3
Maximum DC drain to source current as
a function of case temperature limited
by bond wire (IDS = f(TC))
Final Datasheet
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IMBG120R030M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
350
6
5
4
3
2
1
0
Tvj=25°C
300
Tvj=175°C
250
200
150
100
50
0
0
5
10
15
20
-50
0
50
100
150
VGS [V]
Tvj [ C]
Figure 5
Typical transfer characteristic
(IDS = f(VGS), VDS = 20V, tP = 20µs)
Figure 6
Typical gate-source threshold voltage
as a function of junction temperature
(VGS(th) = f(Tvj), IDS = 11.5mA, VGS = VDS)
350
240
20V
18V
16V
15V
14V
12V
10V
8V
20V
18V
16V
15V
14V
12V
10V
8V
310
270
230
190
150
110
70
200
160
120
80
6V
6V
40
30
0
-10
0
4
8
12
16
20
0
4
8
12
16
20
VDS [V]
VDS [V]
Figure 7
Typical output characteristic, VGS as
parameter
Figure 8
Typical output characteristic, VGS as
parameter
(IDS = f(VDS), Tvj=25°C, tP = 20µs)
(IDS = f(VDS), Tvj=175°C, tP = 20µs)
Final Datasheet
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IMBG120R030M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
18
16
14
12
10
8
80
VGS = 18V
70
VGS = 15V
60
50
40
30
20
10
0
6
4
2
0
-2
0 10 20 30 40 50 60 70 80
QG [nC]
-40
10
60
110
160
Tvj [ C]
Figure 9
Typical on-resistance as a function of
junction temperature
(RDS(on) = f(Tvj), IDS = 25A)
Figure 10 Typical gate charge
(VGS = f(QG), IDS = 25A, VDS = 800V, turn-on
pulse)
6
5
4
3
2
1
0
10000
1000
100
10
Ciss
Coss
Crss
1
1
10
100
1000
-50
0
50
100
150
VDS[V]
Tvj [ C]
Figure 11 Typical capacitance as a function of
drain-source voltage
Figure 12 Typical body diode forward voltage as
function of junction temperature
(VSD=f(Tvj), VGS=0V, ISD=25A)
(C = f(VDS), VGS = 0V, f = 1MHz)
Final Datasheet
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IMBG120R030M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
180
150
120
90
180
VGS=18V
VGS=18V
VGS=15V
150
120
90
60
30
0
VGS=15V
VGS=0V
60
VGS=0V
VGS=-2V
VGS=-2V
30
0
0
2
4
6
8
10
0
2
4
6
8
10
VSD [V]
VSD [V]
Figure 14 Typical body diode forward current as
function of forward voltage, VGS as
parameter
Figure 13 Typical body diode forward current as
function of forward voltage, VGS as
parameter
(ISD = f(VSD), Tvj = 175°C, tP = 20µs)
(ISD = f(VSD), Tvj = 25°C, tP = 20µs)
600
1000
Etot
Etot
Eon
Eon
Eoff
500
400
300
200
100
0
800
Eoff
600
400
200
0
25 50 75 100 125 150 175
0
10
20
30
40
50
Tvj [ C]
ID [A]
Figure 15 Typical switching energy losses as a
function of junction temperature
Figure 16 Typical switching energy losses as a
function of drain-source current
(E = f(IDS), VDD = 800V, VGS = 0V/18V,
RG,ext = 2Ω, Tvj = 175°C, ind. load, test
circuit in Fig. E, diode: body diode at VGS
0V)
(E = f(Tvj), VDD = 800V, VGS = 0V/18V,
RG,ext = 2Ω, ID = 25A, ind. load, test circuit
in Fig. E, diode: body diode at VGS = 0V)
=
Final Datasheet
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IMBG120R030M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
4000
160
120
80
td(on)
tr
Etot
Eon
Eoff
td(off)
tf
3000
2000
1000
0
40
0
0
20
40
60
0
20
40
60
RG [Ohm]
RG [Ohm]
Figure 17 Typical switching energy losses as a
function of gate resistance
Figure 18 Typical switching times as a function of
gate resistor
(E = f(RG,ext), VDD = 800V, VGS = 0V/18V,
ID = 25A, Tvj = 175°C, ind. load, test circuit
in Fig. E, diode: body diode at VGS = 0V)
(t = f(RG,ext), VDD = 800V, VGS = 0V/18V,
ID = 25A, Tvj = 175°C, ind. load, test circuit
in Fig. E, diode: body diode at VGS = 0V)
50
0.7
0.6
0.5
0.4
0.3
0.2
T = 175°C
T = 25°C
40
30
20
10
0
T = 175°C
0.1
T = 25°C
0.0
0
2000
4000
6000
0
2000
4000
6000
diF /dt[A/µs]
diF /dt[A/µs]
Figure 20 Typical reverse recovery current as a
function of diode current slope
Figure 19 Typical reverse recovery charge as a
function of diode current slope
(Irrm = f(dif/dt), VDD = 800V, VGS = 0V/18V,
ID = 25A, ind. load, test circuit in Fig.E,
body diode at VGS = 0V)
(Qrr = f(dif/dt), VDD = 800V, VGS = 0V/18V,
ID = 25A, ind. load, test circuit in Fig.E,
body diode at VGS = 0V)
Final Datasheet
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IMBG120R030M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
1E0
1E-1
1E-2
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
i:
1
2
3
4
ri: [K/W] 3.0E-01 6.4E-02 1.1E-01 2.1E-02
ti: [s] 1.1E-02 1.9E-04 1.7E-03 1.2E-05
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E0
tp [s]
Figure 21 Max. transient thermal resistance (MOSFET/diode)
(Zth(j-c,max) = f(tP), parameter D = tp/T, thermal equivalent circuit in Fig. D)
Final Datasheet
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IMBG120R030M1H
CoolSiC™ 1200V SiC Trench MOSFET
Package drawing
5
Package drawing
Figure 22
Package drawing
Final Datasheet
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IMBG120R030M1H
CoolSiC™ 1200V SiC Trench MOSFET
Test conditions
6
Test conditions
Figure 23
Test conditions
Final Datasheet
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IMBG120R030M1H
1200V SiC Trench MOSFET
Revision history
Revision history
Document
version
Date of release
Description of changes
2.1
2.2
2020-09-01
2020-12-11
Final Datasheet
Correction of circuit symbol on page 1
Final Datasheet
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2020-12-11
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2020.
All Rights Reserved.
Important notice
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive
Electronics Council.
Warnings
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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CoolSiC™ MOSFET 技术通过最大限度发挥碳化硅强大的物理特性，从而增强了器件性能、稳健性和易用性等独特优势。IMBG65R022M1H CoolSiC™ MOSFET 650 VSiC MOSFET 采用紧凑型 7 引脚 SMD 封装，基于先进的英飞凌碳化硅沟槽技术，适于大功率应用。 该器件旨在提高系统性能，缩减尺寸，增强可靠性。
INFINEON
IMBG65R030M1H
CoolSiC™ MOSFET 技术通过最大限度发挥碳化硅强大的物理特性，从而增强了器件性能、稳健性和易用性等独特优势。IMBG65R030M1H CoolSiC™ MOSFET 650 VSiC MOSFET 采用紧凑型 7 引脚 SMD 封装，基于先进的英飞凌碳化硅沟槽技术，适于大功率应用。 该器件旨在提高系统性能，缩减尺寸，增强可靠性。
INFINEON
IMBG65R057M1H
CoolSiC™ MOSFET 技术通过最大限度发挥碳化硅强大的物理特性，从而增强了器件性能、稳健性和易用性等独特优势。IMBG65R057M1H CoolSiC™ MOSFET 650 VSiC MOSFET 采用紧凑型 7 引脚 SMD 封装，基于先进的英飞凌碳化硅沟槽技术，适于大功率应用。 该器件旨在提高系统性能，缩减尺寸，增强可靠性。
INFINEON
IMBG65R083M1H
CoolSiC™ MOSFET 技术通过最大限度发挥碳化硅强大的物理特性，从而增强了器件性能、稳健性和易用性等独特优势。IMBG65R083M1H CoolSiC™ MOSFET 650 VSiC MOSFET 采用紧凑型 7 引脚 SMD 封装，基于先进的英飞凌碳化硅沟槽技术，适于大功率应用。 该器件旨在提高系统性能，缩减尺寸，增强可靠性。
INFINEON
IMBG65R163M1H
CoolSiC™ MOSFET 技术通过最大限度发挥碳化硅强大的物理特性，从而增强了器件性能、稳健性和易用性等独特优势。IMBG65R163M1H CoolSiC™ MOSFET 650 VSiC MOSFET 采用紧凑型 7 引脚 SMD 封装，基于先进的英飞凌碳化硅沟槽技术，适于大功率应用。 该器件旨在提高系统性能，缩减尺寸，增强可靠性。
INFINEON
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