IMW120R020M1H [INFINEON]
采用TO247-3封装的1200V 20mΩ CoolSiCTM 碳化硅MOSFET基于先进的沟槽工艺，该工艺经过优化兼具性能与可靠性。与IGBT和MOSFET等传统的硅（Si）基器件相比，SiC MOSFET具有诸多优势，例如1200 V开关器件中最低的栅极电荷和器件电容、体二极管没有反向恢复损耗、关断损耗受温度影响小以及没有拐点电压的导通特性。因此，CoolSiC™碳化硅 MOSFET非常适用于硬开关和谐振开关拓扑结构，如功率因素校正（PFC）电路、双向拓扑以及DC-DC转换器或DC-AC逆变器。;
| 型号： | IMW120R020M1H |
| 厂家： | 
Infineon |
| 描述： | 采用TO247-3封装的1200V 20mΩ CoolSiCTM 碳化硅MOSFET基于先进的沟槽工艺，该工艺经过优化兼具性能与可靠性。与IGBT和MOSFET等传统的硅（Si）基器件相比，SiC MOSFET具有诸多优势，例如1200 V开关器件中最低的栅极电荷和器件电容、体二极管没有反向恢复损耗、关断损耗受温度影响小以及没有拐点电压的导通特性。因此，CoolSiC™碳化硅 MOSFET非常适用于硬开关和谐振开关拓扑结构，如功率因素校正（PFC）电路、双向拓扑以及DC-DC转换器或DC-AC逆变器。 开关 栅 DC-DC转换器 双极性晶体管 功率因数校正 二极管 栅极 |
| 文件： | 总16页 (文件大小：1225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IMW120R020M1H
™
CoolSiC 1200 V SiC Trench MOSFET
™
CoolSiC 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET
Features
• VDSS = 1200 V at Tvj = 25°C
• IDDC = 98 A at Tc = 25°C
• RDS(on) = 19 mΩ at VGS = 18 V, Tvj = 25°C
• Very low switching losses
• Short circuit withstand time 3 µs
• Benchmark gate threshold voltage, VGS(th) = 4.2 V
• Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
• Robust body diode for hard commutation
• .XT interconnection technology for best-in-class thermal performance
Potential applications
• General purpose drives (GPD)
• EV-Charging
• Online UPS/Industrial UPS
• String inverter
• Solar power optimizer
Product validation
• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
• Please also note the application note AN2019-05 for power and thermal cycling
Description
1 – gate
2 – drain
3 – source
Type
Package
Marking
IMW120R020M1H
PG-TO247-3-STD-NN2.5
12M1H020
Datasheet
www.infineon.com
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.30
2023-05-08
IMW120R020M1H
™
CoolSiC 1200 V SiC Trench MOSFET
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Body diode (MOSFET) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
1
2
3
4
5
6
Datasheet
2
Revision 1.30
2023-05-08
IMW120R020M1H
™
CoolSiC 1200 V SiC Trench MOSFET
1 Package
1
Package
Table 1
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
Unit
Min.
Max.
150
Storage temperature
Soldering temperature
Tstg
-55
°C
°C
Tsold
wave soldering 1.6 mm (0.063 in.) from case
for 10 s
260
Mounting torque
M
M3 screw, Maximum of mounting processes:
3
0.6
62
Nm
K/W
K/W
Thermal resistance,
junction-ambient
Rth(j-a)
Rth(j-c)
MOSFET/body diode
thermal resistance,
junction-case
0.31
0.40
2
MOSFET
Table 2
Maximum rated values
Symbol Note or test condition
Parameter
Values
1200
98
Unit
Drain-source voltage
VDSS
IDDC
Tvj ≥ 25 °C
VGS = 18 V
V
A
Continuous DC drain
current for Rth(j-c,max)
limited by Tvj(max)
Tc = 25 °C
,
Tc = 100 °C
71
Peak drain current, tp
limited by Tvj(max)
IDM
VGS
VGS
EAS
EAR
tSC
VGS = 18 V
213
-10/23
-7/20
721
A
V
Gate-source voltage, max.
transient voltage1)
tp ≤ 0.5 µs, D < 0.001
Gate-source voltage, max.
static voltage
V
Avalanche energy, single
pulse
ID = 40.1 A, VDD = 50 V, L = 0.9 mH
ID = 40.1 A, VDD = 50 V, L = 4.5 µH
mJ
mJ
µs
Avalanche energy,
repetitive
3.58
3
Short-circuit withstand
time
VDD ≤ 800 V, VDS,peak < 1200 V, VGS(on) = 15 V,
Tvj(start) = 25 °C
MOSFET dv/dt robustness
dv/dt
Ptot
VDS = 0...800 V
Tc = 25 °C
150
375
188
V/ns
W
Power dissipation, limited
by Tvj(max)
Tc = 100 °C
1)
Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior of the device. The design
guidelines described in Application Note AN2018-09 must be considered to ensure sound operation of the device over the planned
lifetime.
Datasheet
3
Revision 1.30
2023-05-08
IMW120R020M1H
™
CoolSiC 1200 V SiC Trench MOSFET
2 MOSFET
Table 3
Recommended values
Symbol Note or test condition
VGS(on)
Parameter
Values
Unit
Recommended turn-on
gate voltage
15...18
V
Recommended turn-off
gate voltage
VGS(off)
-5...0
V
Table 4
Characteristic values
Parameter
Symbol Note or test condition
Values
Typ.
19
Unit
Min.
Max.
Drain-source on-state
resistance
RDS(on) ID = 41 A
Tvj = 25 °C,
VGS(on) = 18 V
26.9
mΩ
Tvj = 100 °C,
VGS(on) = 18 V
25
36
Tvj = 175 °C,
VGS(on) = 18 V
Tvj = 25 °C,
VGS(on) = 15 V
23.7
30
Gate-source threshold
voltage
VGS(th) ID = 17.6 mA, VDS = VGS
(tested afꢀr 1 ms pulse
at VGS = 20 V)
Tvj = 25 °C
3.5
4.2
3.6
5.2
V
Tvj = 175 °C
Zero gate-voltage drain
current
IDSS
VDS = 1200 V, VGS = 0 V
Tvj = 25 °C
Tvj = 175 °C
VGS = 23 V
VGS = -10 V
320
µA
nA
5.4
Gate leakage current
IGSS
VDS = 0 V
100
-100
Forward transconductance
Internal gate resistance
Input capacitance
gfs
RG,int
Ciss
ID = 41 A, VDS = 20 V
27.4
1.8
S
f = 1 MHz, VAC = 25 mV
Ω
VDD = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV
VDD = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV
VDD = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV
3460
159
23
pF
pF
pF
Output capacitance
Coss
Crss
Reverse transfer
capacitance
Coss stored energy
Total gate charge
Eoss
QG
VDD = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV
65
µJ
nC
VDD = 800 V, ID = 41 A, VGS = 0/18 V, turn-on
pulse
109
Plateau gate charge
QGS(pl) VDD = 800 V, ID = 41 A, VGS = 0/18 V, turn-on
27.1
21.8
nC
nC
pulse
Gate-to-drain charge
QGD
VDD = 800 V, ID = 41 A, VGS = 0/18 V, turn-on
pulse
(table continues...)
Datasheet
4
Revision 1.30
2023-05-08
IMW120R020M1H
™
CoolSiC 1200 V SiC Trench MOSFET
2 MOSFET
Table 4
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
23
Unit
Min.
Max.
Turn-on delay time
td(on)
VDD = 800 V, ID = 41 A,
VGS = 0/18 V,
Tvj = 25 °C
ns
Tvj = 175 °C
21
RGS(on) = 2 Ω,
RGS(off) = 2 Ω, L = 15 nH,
σ
diode: body diode at
VGS = 0 V
Rise time
tr
VDD = 800 V, ID = 41 A,
VGS = 0/18 V,
Tvj = 25 °C
21.9
28.2
ns
ns
ns
µJ
µJ
µJ
°C
Tvj = 175 °C
RGS(on) = 2 Ω,
RGS(off) = 2 Ω, L = 15 nH,
σ
diode: body diode at
VGS = 0 V
Turn-off delay time
td(off)
VDD = 800 V, ID = 41 A,
VGS = 0/18 V,
Tvj = 25 °C
29
32
Tvj = 175 °C
RGS(on) = 2 Ω,
RGS(off) = 2 Ω, L = 15 nH,
σ
diode: body diode at
VGS = 0 V
Fall time
tf
VDD = 800 V, ID = 41 A,
VGS = 0/18 V,
Tvj = 25 °C
16.5
16.4
Tvj = 175 °C
RGS(on) = 2 Ω,
RGS(off) = 2 Ω, L = 15 nH,
σ
diode: body diode at
VGS = 0 V
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Etot
Tvj
VDD = 800 V, ID = 41 A,
VGS = 0/18 V,
Tvj = 25 °C
1050
1273
Tvj = 175 °C
RGS(on) = 2 Ω,
RGS(off) = 2 Ω, L = 15 nH,
σ
diode: body diode at
VGS = 0 V
VDD = 800 V, ID = 41 A,
VGS = 0/18 V,
Tvj = 25 °C
400
444
Tvj = 175 °C
RGS(on) = 2 Ω,
RGS(off) = 2 Ω, L = 15 nH,
σ
diode: body diode at
VGS = 0 V
VDD = 800 V, ID = 41 A,
VGS = 0/18 V,
Tvj = 25 °C
1627
2194
Tvj = 175 °C
RGS(on) = 2 Ω,
RGS(off) = 2 Ω, L = 15 nH,
σ
diode: body diode at
VGS = 0 V
Virtual junction
temperature
-55
175
Datasheet
5
Revision 1.30
2023-05-08
IMW120R020M1H
™
CoolSiC 1200 V SiC Trench MOSFET
3 Body diode (MOSFET)
Note:
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of
the maximum ratings stated in this datasheet.
The chip technology was characterized up to 200 kV/µs. The measured dV/dt was limited by measurement
test setup and package.
Dynamic test circuit see Fig. F.
3
Body diode (MOSFET)
Table 5
Maximum rated values
Parameter
Symbol Note or test condition
Values
1200
94
Unit
Drain-source voltage
VDSS
ISDC
Tvj ≥ 25 °C
VGS = 0 V
V
A
Continuous reverse drain
current for Rth(j-c,max)
limited by Tvj(max)
Tc = 25 °C
,
Tc = 100 °C
58
Peak reverse drain current,
tp limited by Tvj(max)
ISM
VGS = 0 V
213
A
Table 6
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
3.8
Unit
Min.
Max.
Drain-source reverse
voltage
VSD
Qfr
Ifrm
Efr
ISD = 41 A, VGS = 0 V
Tvj = 25 °C
Tvj = 100 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 175 °C
5
V
3.7
3.6
MOSFET forward recovery
charge
VDD = 800 V,
340
nC
A
ISD = 41 A, VGS = 0 V,
diSD/dt = 3000 A/µs, Qfr
includes also QC
622
MOSFET peak forward
recovery current
VDD = 800 V,
Tvj = 25 °C
17
21
ISD = 41 A, VGS = 0 V,
diSD/dt = 3000 A/µs, Qfr
includes also QC
Tvj = 175 °C
MOSFET forward recovery
energy
VDD = 800 V,
Tvj = 25 °C
177
477
µJ
°C
ISD = 41 A, VGS = 0 V,
diSD/dt = 3000 A/µs, Qfr
includes also QC
Tvj = 175 °C
Virtual junction
temperature
Tvj
-55
175
Datasheet
6
Revision 1.30
2023-05-08
IMW120R020M1H
™
CoolSiC 1200 V SiC Trench MOSFET
4 Characteristics diagrams
4
Characteristics diagrams
Reverse bias safe operating area (RBSOA)
IDS = f(VDS
Tvj ≤ 175 °C, VGS = 0/18 V, Tc = 25 °C
Power dissipation as a function of case temperature
limited by bond wire
Ptot = f(Tc)
)
250
450
400
350
300
250
200
150
100
50
200
150
100
50
0
0
0
200
400
600
800 1000 1200 1400
0
25
50
75
100
125
150
175
Maximum DC drain to source current as a function of Maximum source to drain current as a function of case
case temperature limited by bond wire
temperature limited by bond wire
IDS = f(Tc)
ISD = f(Tc)
VGS = 0 V
120
100
80
60
40
20
0
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
Datasheet
7
Revision 1.30
2023-05-08
IMW120R020M1H
™
CoolSiC 1200 V SiC Trench MOSFET
4 Characteristics diagrams
Typical transfer characteristic
Typical gate-source threshold voltage as a function of
junction temperature
VGS(th) = f(Tvj)
IDS = f(VGS
)
VDS = 20 V, tp = 20 µs
ID = 17.6 mA
700
6.0
5.0
4.0
3.0
2.0
1.0
0.0
600
500
400
300
200
100
0
-50 -25
0
25
50
75 100 125 150 175
0
4
8
12
16
20
Typical output characteristic, VGS as parameter
IDS = f(VDS
Typical output characteristic,VGS as parameter
IDS = f(VDS
)
)
Tvj = 25 °C, tp = 20 µs
Tvj = 175 °C, tp = 20 µs
700
400
350
300
250
200
150
100
50
600
500
400
300
200
100
0
0
0
4
8
12
16
20
0
4
8
12
16
20
Datasheet
8
Revision 1.30
2023-05-08
IMW120R020M1H
™
CoolSiC 1200 V SiC Trench MOSFET
4 Characteristics diagrams
Typical on-state resistance as a function of junction
temperature
RDS(on) = f(Tvj)
Typical gate charge
VGS = f(QG)
ID = 41 A, VDS = 800 V
ID = 41 A
60
50
40
30
20
10
0
18
16
14
12
10
8
6
4
2
0
-50 -25
0
25
50
75 100 125 150 175
0
30
60
90
120
Typical capacitance as a function of drain-source
voltage
Typical reverse drain voltage as function of junction
temperature
C = f(VDS
)
VSD = f(Tvj)
f = 100 kHz, VGS = 0 V
ISD = 41 A, VGS = 0 V
5
4
3
2
1
0
10000
1000
100
10
1
1
-50 -25
0
25
50
75 100 125 150 175
10
100
1000
Datasheet
9
Revision 1.30
2023-05-08
IMW120R020M1H
™
CoolSiC 1200 V SiC Trench MOSFET
4 Characteristics diagrams
Typical reverse drain current as function of reverse
drain voltage, VGS as parameter
Typical reverse drain current as function of reverse
drain voltage, VGS as parameter
ISD = f(VSD
)
ISD = f(VSD)
Tvj = 175 °C, tp = 20 µs
Tvj = 25 °C, tp = 20 µs
200
200
180
160
140
120
100
80
180
160
140
120
100
80
60
60
40
40
20
20
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Typical switching energy as a function of junction
temperature, test circuit in Fig. F, 2nd device own
body diode: VGS = 0 V
Typical switching energy as a function of drain
current, test circuit in Fig. F, 2nd device own body
diode: VGS = 0 V
E = f(Tvj)
E = f(ID)
VGS = 0/18 V, ID = 41 A, RG,ext = 2 Ω, VDD = 800 V
VGS = 0/18 V, Tvj = 175 °C, RG,ext = 2 Ω, VDD = 800 V
3000
2500
2000
1500
1000
500
6000
5000
4000
3000
2000
1000
0
0
25
50
75
100
125
150
175
20
30
40
50
60
70
80
Datasheet
10
Revision 1.30
2023-05-08
IMW120R020M1H
™
CoolSiC 1200 V SiC Trench MOSFET
4 Characteristics diagrams
Typical switching energy losses as a function of gate
Typical switching times as a function of gate
resistance, test circuit in Fig. F, 2nd device own body resistance, test circuit in Fig. F, 2nd device own body
diode: VGS = 0 V
E = f(RG,ext
diode: VGS = 0 V
t = f(RG,ext
)
)
VGS = 0/18 V, ID = 41 A, Tvj = °C, VDD = 800 V
VGS = 0/18 V, ID = 41 A, Tvj = 175 °C, VDD = 800 V
9000
400
350
300
250
200
150
100
50
6000
3000
0
0
0
10
20
30
40
50
0
10
20
30
40
50
Typical reverse recovery charge as a function of
Typical reverse recovery current as a function of
revere drain current slope, test circuit in Fig. F, 2nd
device own body diode: VGS = 0 V
reverse drain current slope, test circuit in Fig. F, 2nd
device own body diode: VGS = 0 V
Qfr = f(diSD/dt )
Ifrm = f(diSD/dt )
VGS = 0/18 V, ISD = 41 A, VDD = 800 V
VGS = 0/18 V, ISD = 41 A, VDD = 800 V
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
30
25
20
15
10
5
0
0
1000
2000
3000
4000
5000
6000
0
1000
2000
3000
4000
5000
Datasheet
11
Revision 1.30
2023-05-08
IMW120R020M1H
™
CoolSiC 1200 V SiC Trench MOSFET
4 Characteristics diagrams
Typical switching energy losses as a function of dead Max. transient thermal impedance (MOSFET/diode)
time / blanking time, test circuit in Fig. F, 2nd device
own body diode: VGS = -5 V
Zth(j-c),max = f(tp)
D = tp/T
E = f(tdead
)
VGS = -5/18 V, ID = 41 A, Tvj = 175 °C, VDD = 800 V
1400
1
0.1
1200
1000
800
600
400
200
0
0.01
0.001
0.0001
1E-6
1E-5 0.0001 0.001
0.01
0.1
1
50
250
450
650
850
1050
Datasheet
12
Revision 1.30
2023-05-08
IMW120R020M1H
™
CoolSiC 1200 V SiC Trench MOSFET
5 Package outlines
5
Package outlines
PG-TO247-3-STD-NN2.5
PACKAGE - GROUP
NUMBER:
PG-TO247-3-U06
MILLIMETERS
DIMENSIONS
MIN.
4.83
2.27
1.85
1.07
1.90
2.87
0.55
20.80
16.25
0.95
15.70
13.10
3.68
1.00
MAX.
5.21
2.54
2.16
1.33
2.41
3.38
0.68
21.10
17.65
1.35
16.13
14.15
5.10
2.60
A
A1
A2
b
b1
b2
c
D
D1
D2
E
E1
E2
E3
e
5.44
3
N
L
19.80
4.10
3.50
5.49
6.04
20.32
4.47
3.70
6.00
6.30
L1
øP
Q
S
Figure 1
Datasheet
13
Revision 1.30
2023-05-08
IMW120R020M1H
™
CoolSiC 1200 V SiC Trench MOSFET
6 Testing conditions
6
Testing conditions
I,V
VDS
90%
diSD/dt
tfr = ta + tb
Qfr = Qa + Qb
ISD
tfr
ta
tb
10%
t
VGS
Qa
Qb
10% Ifrm
td(on)
td(off)
Ifrm
tr
ton
tf
toff
VSD
Figure A. Definition of switching times
VGS(t)
90% VGS
Figure B. Definition of body diode
switching characteristics
VGS,VDS
Q
97% VDS
VGS = 18 V
10% VGS
t
ID(t)
1% ID
t
VDS
VDS(t)
t, Q
QGS,pl
QG,tot
QGD
Figure D. Definition of QGD
½Lσ
Eon
ʃ VDS*ID*dt
=
Eoff
ʃ VDS*ID*dt
=
t4
t2
second
device
t3
t1
3% VDS
t
L
Cσ
t1
t2
t3
t4
VGS(off)
Figure C. Definition of switching losses
VDD
τ1/r1
τ2/r2
τn/rn
RG
DUT
Tj(t)
p(t)
r1
r2
r3
½Lσ
M
TC
=
Figure F. Dynamic test circuit
Parasitic inductance Lσ,
Parasitic capacitor Cσ,
=
Figure E. Thermal equivalent circuit
Figure 2
Datasheet
14
Revision 1.30
2023-05-08
IMW120R020M1H
™
CoolSiC 1200 V SiC Trench MOSFET
Revision history
Revision history
Document revision
Date of release Description of changes
1.00
1.10
2022-02-02
2022-08-12
Final datasheet
Change of test condition of dynamic capacitances in Table 4,
“Characteristic values” (Ciss, Coss, Crss): VDD= 25 V to VDD= 800 V
Correction of unit of “Input capacitance” Ciss from nF to pF
Change of VGS “Gate-source voltage, max. static voltage” in Table 2,
“Maximum rated values” from -5/20 V to -7/20 V
Editorial changes in “Features” on page 1
Editorial changes in “Package” on page 1
Correction of unit of x-axis at diagram “Max. transient thermal
impedance (MOSFET/diode)” from µs to s, on page 13
Correction of diagram “Typical reverse drain current as a function of
reverse drain voltage, VGS as parameter”, on page 11
1.20
1.30
2023-02-20
2023-05-08
Correction of IDSS in table 4 on page 4
Editorial changes
Correction of gate charge values in Table 4
Datasheet
15
Revision 1.30
2023-05-08
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Edition 2023-05-08
Published by
Infineon Technologies AG
81726 Munich, Germany
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