IPB025N10N3 G [INFINEON]

英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。;


型号：	IPB025N10N3 G
厂家：	Infineon
描述：	英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。
文件：	总9页 (文件大小：665K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IPB025N10N3 G

"%&$!"#^™3 Power-Transistor

Product Summary

Features

V _9H

)((

*&-

P ' ꢀ3 81>>5<ꢁ >? A=1< <5E5<

R _9H"[Z#$YMc

I ₉

P ꢂ G3 5<<5>C 71C5 3 81A75 G R _9H"[Z#@A? 4D3 C ꢃ ( & ꢄ

P ꢂ GCA5=5<H <? F ? >ꢀA5B9BC1>3 5 R _9H"[Z#

)0(

P " 978 3 DAA5>C 3 1@12 9<9CH

P ꢅ ꢆ ꢇ Sꢈ ? @5A1C9>7 C5=@5A1CDA5

P )2 ꢀ6A55 <514 @<1C9>7ꢉ + ? " , 3 ? =@<91>C

P * D1<96954 13 3 ? A49>7 C? $ ꢂ ꢊ ꢂ ꢈ ^)#6? A C1A75C 1@@<93 1C9? >

P " 1<? 75>ꢀ6A55 13 3 ? A49>7 C? #ꢂ ꢈ ꢋ ꢅ ꢌ ꢍ ꢎ ꢀꢌ ꢀꢌ ꢅ

Type

#)ꢖ ꢐ ꢌ ꢇ ' ꢅ ꢐ ' ꢕ !

Package

Marking

E=%ID*.+%/

(*-C)(C

Maximum ratings, 1C T _Vꢏ ꢌ ꢇ Sꢈ ꢁ D><5BB ? C85AF9B5 B@53 96954

Value

Parameter

Symbol Conditions

Unit

T ₈ꢏ ꢌ ꢇ Sꢈ ^*#

I ₉

ꢈ ? >C9>D? DB 4A19> 3 DAA5>C

)0(

)./

T ₈ꢏ ꢅ ꢐ ꢐ Sꢈ

)D<B54 4A19> 3 DAA5>C^*#

I _9$\`X^Q

E _6H

T ₈ꢏ ꢌ ꢇ Sꢈ

I ₉ꢏ ꢅ ꢐ ꢐ ꢑ ꢁ R _=Hꢏ ꢌ ꢇ "

/*(

ꢑ E1<1>3 85 5>5A7Hꢁ B9>7<5 @D<B5

!1C5 B? DA3 5 E? <C175

)(((

V _=H

p*(

P _{_[_}

T ₈ꢏ ꢌ ꢇ Sꢈ

)? F5A 49BB9@1C9? >

+((

Sꢈ

T _Vꢁ T _{^_S}

( @5A1C9>7 1>4 BC? A175 C5=@5A1CDA5

#ꢂ ꢈ 3 <9=1C93 3 1C57? AHꢉ ꢊ #' #ꢂ ꢈ ꢋ ꢓ ꢀꢅ

ꢀꢇ ꢇ ꢒꢒꢒ ꢅ ꢆ ꢇ

ꢇ ꢇ ꢔꢅ ꢆ ꢇ ꢔꢇ ꢋ

^)#$ ꢀ,-ꢊ ꢌ ꢐ 1>4 $ ꢂ ,ꢊ ꢌ ꢌ

^*#,55 697DA5 ꢕ

+ 5Eꢒ ꢌ ꢒꢐ ꢕ

@175 ꢅ

ꢌ ꢐ ꢐ ꢎ ꢀꢅ ꢌ ꢀꢅ ꢅ

IPB025N10N3 G

Values

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

R _{_T@8}

-85A=1< A5B9BC1>3 5ꢁ :D>3 C9? > ꢀ 3 1B5

-85A=1< A5B9BC1>3 5ꢁ

ꢀ

(&-

ꢋ ꢌ

A'K

R _{_T@6}

=9>9=1< 6? ? C@A9>C

ꢋ 3 =^*3 ? ? <9>7 1A51^+#

:D>3 C9? > ꢀ 1=2 95>C

Electrical characteristics, 1C T _Vꢏ ꢌ ꢇ Sꢈ ꢁ D><5BB ? C85AF9B5 B@53 96954

Static characteristics

V _"7G#9HH

V _{=H"_T#}

_=Hꢏ ꢐ .ꢁ I ₉ꢏ ꢅ =ꢑ

ꢊ A19>ꢀB? DA3 5 2 A51;4? F> E? <C175

!1C5 C8A5B8? <4 E? <C175

)((

_9H4V _=Hꢁ I ₉ꢏ ꢌ ꢆ ꢇ U ꢑ

*&/

+&-

_9Hꢏ ꢅ ꢐ ꢐ .ꢁ V _=Hꢏ ꢐ .ꢁ

I _9HH

05A? 71C5 E? <C175 4A19> 3 DAA5>C

(&)

)(

)

T _Vꢏ ꢌ ꢇ Sꢈ

_9Hꢏ ꢅ ꢐ ꢐ .ꢁ V _=Hꢏ ꢐ .ꢁ

)((

T _Vꢏ ꢅ ꢌ ꢇ Sꢈ

I _=HH

_=Hꢏ ꢌ ꢐ .ꢁ V _9Hꢏ ꢐ .

_=Hꢏ ꢅ ꢐ .ꢁ I ₉ꢏ ꢅ ꢐ ꢐ ꢑ

_=Hꢏ ꢋ .ꢁ I ₉ꢏ ꢇ ꢐ ꢑ

!1C5ꢀB? DA3 5 <51;175 3 DAA5>C

)

)(( Z6

R _9H"[Z#

ꢊ A19>ꢀB? DA3 5 ? >ꢀBC1C5 A5B9BC1>3 5

*&(

*&-

)&1

*&-

,&,

R ₌

g _R^

!1C5 A5B9BC1>3 5

fV _9Hf5*fI ₉fR _9H"[Z#YMcꢁ

I ₉ꢏ ꢅ ꢐ ꢐ ꢑ

I]MZ^O[ZP`O_MZOQ

)((

*((

^+#ꢊ 5E93 5 ? > ꢍ ꢐ == G ꢍ ꢐ == G ꢅ ꢒꢇ == 5@? GH )ꢈ ꢖ + ꢍ F9C8 ꢋ 3 = ꢃ? >5 <1H5Aꢁ ꢆ ꢐ U = C893 ;ꢄ 3 ? @@5A 1A51 6? A 4A19>

3 ? >>53 C9? >ꢒ )ꢈ ꢖ 9B E5AC93 1< 9> BC9<< 19Aꢒ

+ 5Eꢒ ꢌ ꢒꢐ ꢕ

@175 ꢌ

ꢌ ꢐ ꢐ ꢎ ꢀꢅ ꢌ ꢀꢅ ꢅ

IPB025N10N3 G

Values

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

#>@DC 3 1@13 9C1>3 5

( DC@DC 3 1@13 9C1>3 5

+ 5E5AB5 CA1>B65A 3 1@13 9C1>3 5

-DA>ꢀ? > 45<1H C9=5

+ 9B5 C9=5

C _U^^

)))((

)1,(

),0(( \<

_=Hꢏ ꢐ .ꢁ V _9Hꢏ ꢇ ꢐ .ꢁ

C _[^^

C _]^^

t _P"[Z#

t _]

*-0(

f ꢏ ꢅ & " I

-0

₉₉ꢏ ꢇ ꢐ .ꢁ V _=Hꢏ ꢅ ꢐ .ꢁ

I ₉ꢏ ꢅ ꢐ ꢐ ꢑ ꢁ R ₌ꢏ ꢅ ꢒꢋ "

t _P"[RR#

t _R

-DA>ꢀ? 66 45<1H C9=5

1<< C9=5

!1C5 ꢈ 81AS5 ꢈ 81A13 C5A9BC93 B^,#

!1C5 C? B? DA3 5 3 81A75

!1C5 C? 4A19> 3 81A75

,F9C3 89>7 3 81A75

Q _S^

Q _SP

₉₉ꢏ ꢇ ꢐ .ꢁ I ₉ꢏ ꢅ ꢐ ꢐ ꢑ ꢁ

_=Hꢏ ꢐ C? ꢅ ꢐ .

Q _^b

Q _S

*(.

!1C5 3 81A75 C? C1<

)--

,&+

*(-

V _{\XM_QM`}

Q _[^^

!1C5 @<1C51D E? <C175

( DC@DC 3 81A75

₉₉ꢏ ꢇ ꢐ .ꢁ V _=Hꢏ ꢐ .

*/+ Z8

Reverse Diode

I _H

ꢊ 9? 45 3 ? >C9>? DB 6? AF1A4 3 DAA5>C

ꢊ 9? 45 @D<B5 3 DAA5>C

)0(

/*(

T ₈ꢏ ꢌ ꢇ Sꢈ

I _H$\`X^Q

_=Hꢏ ꢐ .ꢁ I _<ꢏ ꢅ ꢐ ꢐ ꢑ ꢁ

V _H9

ꢊ 9? 45 6? AF1A4 E? <C175

)

)&*

T _Vꢏ ꢌ ꢇ Sꢈ

t _]]

+ 5E5AB5 A53 ? E5AH C9=5

V _Gꢏ ꢇ ꢐ .ꢁ I _<4100A ꢁ

Pi _<'Pt ꢏ ꢅ ꢐ ꢐ ꢑ ꢔU B

Q _]]

+ 5E5AB5 A53 ? E5AH 3 81A75

*+*

^,#,55 697DA5 ꢅ ꢋ 6? A 71C5 3 81A75 @1A1=5C5A 4569>9C9? >

+ 5Eꢒ ꢌ ꢒꢐ ꢕ

@175 ꢕ

ꢌ ꢐ ꢐ ꢎ ꢀꢅ ꢌ ꢀꢅ ꢅ

IPB025N10N3 G

1 Power dissipation

2 Drain current

_{_[_}4R"T ₈#

I ₉4R"T ₈ꢄꢉ V _=H"ꢅ ꢐ .

350

300

250

200

150

100

200

180

160

140

120

100

150

200

100

150

200

T _C[°C]

3 Safe operating area

I ₉4R"V _9Hꢄꢉ T ₈ꢏ ꢌ ꢇ Sꢈ ꢉ D 4(

@1A1=5C5Aꢗ t _\

4 Max. transient thermal impedance

_{_T@8}4R"t _\#

@1A1=5C5Aꢗ D 4t _\'T

10³

10⁰

<9=9C54 2 H ? >ꢀBC1C5

]Q^U^_MZOQ

ꢅ U B

ꢅ ꢐ U B

ꢅ ꢐ ꢐ U B

10²

10¹

10⁰

10^-1

(&-

ꢅ =B

ꢅ ꢐ =B

(&*

10^-1

(&)

(&(-

(&(*

(&()

B9>7<5 @D<B5

10^-2

10^-1

10⁰

10¹

10²

10³

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

t _p[s]

V _DS[V]

+ 5Eꢒ ꢌ ꢒꢐ ꢕ

@175 ꢍ

ꢌ ꢐ ꢐ ꢎ ꢀꢅ ꢌ ꢀꢅ ꢅ

IPB025N10N3 G

5 Typ. output characteristics

I ₉4R"V _9Hꢄꢉ T _Vꢏ ꢌ ꢇ Sꢈ

6 Typ. drain-source on resistance

_9H"[Z#4R"I ₉ꢄꢉ T _Vꢏ ꢌ ꢇ Sꢈ

@1A1=5C5Aꢗ V _=H

300

ꢅ ꢐ .

ꢋ .

250

200

150

100

ꢇ ꢒꢇ .

ꢆ ꢒꢇ .

ꢇ .

ꢍ ꢒꢇ .

ꢇ .

ꢋ .

ꢆ ꢒꢇ .

ꢍ ꢒꢇ .

ꢅ ꢐ .

120

160

200

240

280

V _DS[V]

I _D[A]

7 Typ. transfer characteristics

I ₉4R"V _=Hꢄꢉ JV _9Hf5*fI ₉fR _9H"[Z#YMc

@1A1=5C5Aꢗ T _V

8 Typ. forward transconductance

g _R^4R"I ₉ꢄꢉ T _Vꢏ ꢌ ꢇ Sꢈ

300

250

200

150

100

240

200

160

120

ꢌ ꢇ Sꢈ

ꢅ ꢆ ꢇ Sꢈ

120

160

V _GS[V]

I _D[A]

+ 5Eꢒ ꢌ ꢒꢐ ꢕ

@175 ꢇ

ꢌ ꢐ ꢐ ꢎ ꢀꢅ ꢌ ꢀꢅ ꢅ

IPB025N10N3 G

9 Drain-source on-state resistance

10 Typ. gate threshold voltage

_{=H"_T#}4R"T _Vꢄꢉ V _=H4V _9H

_9H"[Z#4R"T _Vꢄꢉ I ₉ꢏ ꢅ ꢐ ꢐ ꢑ ꢉ V _=Hꢏ ꢅ ꢐ .

@1A1=5C5Aꢗ I ₉

3.5

ꢌ ꢆ ꢇ ꢐ U ꢑ

2.5

ꢌ ꢆ ꢇ U ꢑ

ꢎ ꢓ ꢘ

_d\

1.5

0.5

-60

-20

100

140

180

-60

-20

100

140

180

T _j[°C]

11 Typ. capacitances

12 Forward characteristics of reverse diode

I _<4R"V _H9

C 4R"V _9Hꢄꢉ V _=Hꢏ ꢐ .ꢉ f ꢏ ꢅ & " I

@1A1=5C5Aꢗ T _V

10⁵

10³

ꢅ ꢆ ꢇ Sꢈ ꢁ ꢎ ꢓ ꢘ

8U^^

10⁴

10³

10²

10¹

ꢌ ꢇ Sꢈ

10²

8[^^

ꢅ ꢆ ꢇ Sꢈ

10¹

8]^^

ꢌ ꢇ Sꢈ ꢁ ꢎ ꢓ ꢘ

10⁰

V _DS[V]

0.5

1.5

V _SD[V]

+ 5Eꢒ ꢌ ꢒꢐ ꢕ

@175 ꢋ

ꢌ ꢐ ꢐ ꢎ ꢀꢅ ꢌ ꢀꢅ ꢅ

IPB025N10N3 G

13 Avalanche characteristics

_6H4R"t _6Jꢄꢉ R _=Hꢏ ꢌ ꢇ "

14 Typ. gate charge

_=H4R"Q _{SM_Q}ꢄꢉ I ₉ꢏ ꢅ ꢐ ꢐ ꢑ @D<B54

@1A1=5C5Aꢗ T _{V"^_M]_#}

@1A1=5C5Aꢗ V ₉₉

1000

ꢓ ꢐ .

100

ꢇ ꢐ .

ꢌ ꢇ Sꢈ

ꢅ ꢐ ꢐ Sꢈ

ꢌ ꢐ .

ꢅ ꢇ ꢐ Sꢈ

100

1000

Q _gate[nC]

120

160

t _AV[µs]

15 Drain-source breakdown voltage

16 Gate charge waveforms

_7G"9HH#4R"T _Vꢄꢉ I ₉ꢏ ꢅ =ꢑ

110

V _=H

Q _g

105

100

V _{S ^"_T#}

Q _{S"_T#}

Q _^b

Q _SP

Q _gate

Q _S^

-60

-20

100

140

180

T _j[°C]

+ 5Eꢒ ꢌ ꢒꢐ ꢕ

@175 ꢆ

ꢌ ꢐ ꢐ ꢎ ꢀꢅ ꢌ ꢀꢅ ꢅ

IPB025N10N3 G

PG-TO263-3: Outline

+ 5Eꢒ ꢌ ꢒꢐ ꢕ

@175 ꢓ

ꢌ ꢐ ꢐ ꢎ ꢀꢅ ꢌ ꢀꢅ ꢅ

IPB025N10N3 G

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of

conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information

on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with

the express written approval of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-support device or system or to affect

the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user

or other persons may be endangered.

+ 5Eꢒ ꢌ ꢒꢐ ꢕ

@175 ꢎ

ꢌ ꢐ ꢐ ꢎ ꢀꢅ ꢌ ꢀꢅ ꢅ

IPB025N10N3 G [INFINEON]

相关型号：

IPB025N10N3G

IPB025N10N3GATMA1

IPB026N06N

IPB026N06NATMA1

IPB026N10NF2S

IPB027N10N3

IPB027N10N3 G

IPB027N10N3G

IPB027N10N3GATMA1

IPB027N10N3GXT

IPB027N10N5

IPB027N10N5ATMA1