IPB025N10N3GATMA1 [INFINEON]
Power Field-Effect Transistor, 180A I(D), 100V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, GREEN, PLASTIC, TO-263, 7 PIN;型号: | IPB025N10N3GATMA1 |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 180A I(D), 100V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, GREEN, PLASTIC, TO-263, 7 PIN 开关 脉冲 晶体管 |
文件: | 总9页 (文件大小:661K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
相关型号:
IPB026N06N
New OptiMOS⢠40V and 60VWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
43
INFINEON
IPB026N06NATMA1
Power Field-Effect Transistor, 25A I(D), 60V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
0
INFINEON
IPB026N10NF2S
Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 2.6 mOhm, addressing a broad range of applications from low- to high-switching frequency.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
0
INFINEON
IPB027N10N3
3 Power-TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
0
INFINEON
IPB027N10N3 G
英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比,该系列在 R Ds(on)和 FOM(品质因数)方面均降低了30%。Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
0
INFINEON
IPB027N10N3G
OptiMOS?3 Power-TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
136
INFINEON
IPB027N10N3GATMA1
3 Power-TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
3
INFINEON
IPB027N10N3GXT
Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
3
INFINEON
IPB027N10N5
OptiMOSª 5 Power-Transistor, 100 VWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
1
INFINEON
IPB027N10N5ATMA1
Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
3
INFINEON
IPB027N10N5_16
OptiMOSª 5 Power-Transistor, 100 VWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
1
INFINEON
IPB029N06N3G
OptiMOS™3 Power-Transistor Features Ideal for high frequency switching and sync. rec.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
69
INFINEON
IPB029N06N3GATMA1
Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
0
INFINEON
IPB029N06N3GE8187ATMA1
Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
0
INFINEON
IPB029N06NF2S
Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 2.9 mOhm, addressing a broad range of applications from low- to high-switching frequency.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
0
INFINEON
IPB030N08N3 G
OptiMOS™ 系列是高效率解决方案的市场领导者,适用于发电(例如太阳能微逆变器)、电源(例如服务器和通信)以及功耗(例如电动车)领域。Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
0
INFINEON
IPB030N08N3G
OptiMOS3 Power-TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
46
INFINEON
IPB030N08N3GATMA1
Power Field-Effect Transistor, 160A I(D), 80V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, D2PAK-7Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
0
INFINEON
IPB031N08N5
Infineon’s OptiMOS™ 5 80V industrial power MOSFET IPB031N08N5 offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
0
INFINEON
IPB031NE7N3G
OptiMOSTM3 Power-TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
33
INFINEON
©2020 ICPDF网 联系我们和版权申明