IPB030N08N3 G [INFINEON]

OptiMOS™ 系列是高效率解决方案的市场领导者，适用于发电（例如太阳能微逆变器）、电源（例如服务器和通信）以及功耗（例如电动车）领域。;


型号：	IPB030N08N3 G
厂家：	Infineon
描述：	OptiMOS™ 系列是高效率解决方案的市场领导者，适用于发电（例如太阳能微逆变器）、电源（例如服务器和通信）以及功耗（例如电动车）领域。通信服务器
文件：	总9页 (文件大小：696K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IPB030N08N3 G

"%&$!"#^™3 Power-Transistor

Product Summary

Features

V _9H

+&(

).(

Q #451< 6? B 8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 ꢀ B53 ꢀ

Q ( @D9=9J54 D53 8>? <? 7I 6? B =? D? B 4B9F5 1@@<93 1D9? >C

Q ꢁ H3 5<<5>D 71D5 3 81B75 H R _9H"[Z#@B? 4E3 D ꢂ ( & ꢃ

Q .5BI <? G ? >ꢄB5C9CD1>3 5 + _9H"[Z#

R _9H"[Z#$YMd

I ₉

Q ,E@5B9? B D85B=1< B5C9CD1>3 5

Q ' ꢄ3 81>>5<ꢅ >? B=1< <5F5<

Q ꢆ ꢇ ꢇ ꢈ 1F1<1>3 85 D5CD54

Q )2 ꢄ6B55 @<1D9>7ꢉ + ? " , 3 ? =@<91>D

Q * E1<96954 13 3 ? B49>7 D? $ ꢁ ꢊ ꢁ ꢋ ^)#6? B D1B75D 1@@<93 1D9? >C

Q " 1<? 75>ꢄ6B55 13 3 ? B49>7 D? #ꢁ ꢋ ꢌ ꢆ ꢍ ꢎ ꢏ ꢄꢍ ꢄꢍ ꢆ

Type

#)ꢗ ꢇ ꢖ ꢇ ' ꢇ ꢔ ' ꢖ !

Package

Marking

E=%ID*.+%/

(+(C(0C

Maximum ratings, 1D T _Vꢐ ꢍ ꢑ Tꢋ ꢅ E><5CC ? D85BG9C5 C@53 96954

Value

Parameter

Symbol Conditions

Unit

T ₈ꢐ ꢍ ꢑ Tꢋ ^*#

I ₉

ꢋ ? >D9>E? EC 4B19> 3 EBB5>D

).(

)+/

T ₈ꢐ ꢆ ꢇ ꢇ Tꢋ

)E<C54 4B19> 3 EBB5>D^*#

I _{9$\aX_Q}

E _6H

T ₈ꢐ ꢍ ꢑ Tꢋ

I ₉ꢐ ꢆ ꢇ ꢇ ꢒ ꢅ R _=Hꢐ ꢍ ꢑ "

.,(

ꢒ F1<1>3 85 5>5B7Iꢅ C9>7<5 @E<C5^+#

!1D5 C? EB3 5 F? <D175

-)(

V _=H

q*(

P _`[`

T ₈ꢐ ꢍ ꢑ Tꢋ

)? G5B 49CC9@1D9? >

*),

Tꢋ

T _Vꢅ T _{_`S}

( @5B1D9>7 1>4 CD? B175 D5=@5B1DEB5

#ꢁ ꢋ 3 <9=1D93 3 1D57? BIꢉ ꢊ #' #ꢁ ꢋ ꢌ ꢔ ꢄꢆ

ꢄꢑ ꢑ ꢀꢀꢀ ꢆ ꢓ ꢑ

ꢑ ꢑ ꢕꢆ ꢓ ꢑ ꢕꢑ ꢌ

^)#$ ꢄ,-ꢊ ꢍ ꢇ 1>4 $ ꢁ ,ꢊ ꢍ ꢍ

^*#,55 697EB5 ꢖ 6? B =? B5 45D19<54 9>6? B=1D9? >

^+#,55 697EB5 ꢆ ꢖ 6? B =? B5 45D19<54 9>6? B=1D9? >

+ 5Fꢀ ꢍ ꢀꢖ

@175 ꢆ

ꢍ ꢇ ꢇ ꢏ ꢄꢆ ꢍ ꢄꢆ ꢌ

IPB030N08N3 G

Values

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

R _`T@8

-85B=1< B5C9CD1>3 5ꢅ :E>3 D9? > ꢄ 3 1C5

-85B=1< B5C9CD1>3 5ꢅ

ꢄ

(&/

ꢌ ꢍ

A'K

R _`T@6

=9>9=1< 6? ? D@B9>D

ꢌ 3 =^*3 ? ? <9>7 1B51^,#

:E>3 D9? > ꢄ 1=2 95>D

Electrical characteristics, 1D T _Vꢐ ꢍ ꢑ Tꢋ ꢅ E><5CC ? D85BG9C5 C@53 96954

Static characteristics

V _"7G#9HH

V _=H"`T#

_=Hꢐ ꢇ .ꢅ I ₉ꢐ ꢆ =ꢒ

ꢊ B19>ꢄC? EB3 5 2 B51;4? G> F? <D175

!1D5 D8B5C8? <4 F? <D175

_9H4V _=Hꢅ I ₉ꢐ ꢆ ꢑ ꢑ V ꢒ

*&0

+&-

_9Hꢐ ꢔ ꢇ .ꢅ V _=Hꢐ ꢇ .ꢅ

I _9HH

05B? 71D5 F? <D175 4B19> 3 EBB5>D

(&)

)(

)

T _Vꢐ ꢍ ꢑ Tꢋ

_9Hꢐ ꢔ ꢇ .ꢅ V _=Hꢐ ꢇ .ꢅ

)((

T _Vꢐ ꢆ ꢍ ꢑ Tꢋ

I _=HH

_=Hꢐ ꢍ ꢇ .ꢅ V _9Hꢐ ꢇ .

_=Hꢐ ꢆ ꢇ .ꢅ I ₉ꢐ ꢆ ꢇ ꢇ ꢒ

_=Hꢐ ꢌ .ꢅ I ₉ꢐ ꢑ ꢇ ꢒ

!1D5ꢄC? EB3 5 <51;175 3 EBB5>D

)

)(( Z6

R _9H"[Z#

ꢊ B19>ꢄC? EB3 5 ? >ꢄCD1D5 B5C9CD1>3 5

*&-

+&+

)&1

+&(

-&-

R ₌

g _{R_}

!1D5 B5C9CD1>3 5

gV _9Hg5*gI ₉gR _9H"[Z#YMdꢅ

I ₉ꢐ ꢆ ꢇ ꢇ ꢒ

I^MZ_O[ZPaO`MZOQ

)-/

^,#ꢊ 5F93 5 ? > ꢎ ꢇ == H ꢎ ꢇ == H ꢆ ꢀꢑ == 5@? HI )ꢋ ꢗ + ꢎ G9D8 ꢌ 3 = ꢂ? >5 <1I5Bꢅ ꢓ ꢇ V = D893 ;ꢃ 3 ? @@5B 1B51 6? B 4B19>

3 ? >>53 D9? >ꢀ )ꢋ ꢗ 9C F5BD93 1< 9> CD9<< 19Bꢀ

+ 5Fꢀ ꢍ ꢀꢖ

@175 ꢍ

ꢍ ꢇ ꢇ ꢏ ꢄꢆ ꢍ ꢄꢆ ꢌ

IPB030N08N3 G

Values

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

#>@ED 3 1@13 9D1>3 5

( ED@ED 3 1@13 9D1>3 5

+ 5F5BC5 DB1>C65B 3 1@13 9D1>3 5

-EB>ꢄ? > 45<1I D9=5

+ 9C5 D9=5

C _{U__}

.)((

).,(

-1

0))( \<

_=Hꢐ ꢇ .ꢅ V _9Hꢐ ꢎ ꢇ .ꢅ

C _{[__}

C _{^__}

t _P"[Z#

t _^

*)0(

f ꢐ ꢆ & " J

₉₉ꢐ ꢎ ꢇ .ꢅ V _=Hꢐ ꢆ ꢇ .ꢅ

I ₉ꢐ ꢆ ꢇ ꢇ ꢒ ꢅ R ₌ꢐ ꢆ ꢀꢌ "

t _P"[RR#

t _R

-EB>ꢄ? 66 45<1I D9=5

1<< D9=5

!1D5 ꢋ 81BS5 ꢋ 81B13 D5B9CD93 C^-#

!1D5 D? C? EB3 5 3 81B75

!1D5 D? 4B19> 3 81B75

,G9D3 89>7 3 81B75

Q _{S_}

Q _SP

₉₉ꢐ ꢎ ꢇ .ꢅ I ₉ꢐ ꢆ ꢇ ꢇ ꢒ ꢅ

_=Hꢐ ꢇ D? ꢆ ꢇ .

Q _{_c}

Q _S

))/

!1D5 3 81B75 D? D1<

V _\XM`QMa

Q _{[__}

!1D5 @<1D51E F? <D175

( ED@ED 3 81B75

-&(

))1

₉₉ꢐ ꢎ ꢇ .ꢅ V _=Hꢐ ꢇ .

)-0 Z8

Reverse Diode

I _H

ꢊ 9? 45 3 ? >D9>? EC 6? BG1B4 3 EBB5>D

ꢊ 9? 45 @E<C5 3 EBB5>D

).(

.,(

T ₈ꢐ ꢍ ꢑ Tꢋ

I _{H$\aX_Q}

_=Hꢐ ꢇ .ꢅ I _<ꢐ ꢆ ꢇ ꢇ ꢒ ꢅ

V _H9

ꢊ 9? 45 6? BG1B4 F? <D175

)&(

)&*

T _Vꢐ ꢍ ꢑ Tꢋ

t _^^

+ 5F5BC5 B53 ? F5BI D9=5

V _Gꢐ ꢎ ꢇ .ꢅ #_<ꢐ ꢆ ꢇ ꢇ ꢒ

Pi _<'Pt ꢐ ꢆ ꢇ ꢇ ꢒ ꢕV C

Q _^^

+ 5F5BC5 B53 ? F5BI 3 81B75

)+.

^-#,55 697EB5 ꢆ ꢌ 6? B 71D5 3 81B75 @1B1=5D5B 4569>9D9? >

+ 5Fꢀ ꢍ ꢀꢖ

@175 ꢖ

ꢍ ꢇ ꢇ ꢏ ꢄꢆ ꢍ ꢄꢆ ꢌ

IPB030N08N3 G

1 Power dissipation

2 Drain current

_`[`4R"T ₈#

I ₉4R"T ₈ꢃꢉ V _=H"ꢆ ꢇ .

250

180

160

140

120

100

200

150

100

150

200

100

150

200

T _C[°C]

3 Safe operating area

I ₉4R"V _9Hꢃꢉ T ₈ꢐ ꢍ ꢑ Tꢋ ꢉ D 4(

@1B1=5D5Bꢘ t _\

4 Max. transient thermal impedance

_`T@84R"t _\#

@1B1=5D5Bꢘ D 4t _\'T

10³

10⁰

ꢆ V C

<9=9D54 2 I ? >ꢄCD1D5

^Q_U_`MZOQ

ꢆ ꢇ V C

(&-

(&*

ꢆ ꢇ ꢇ V C

10²

10¹

10⁰

ꢆ =C

ꢆ ꢇ =C

10^-1

(&)

(&(-

(&(*

(&()

C9>7<5 @E<C5

10^-2

10^-1

10⁰

10¹

10²

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

V _DS[V]

t _p[s]

+ 5Fꢀ ꢍ ꢀꢖ

@175 ꢎ

ꢍ ꢇ ꢇ ꢏ ꢄꢆ ꢍ ꢄꢆ ꢌ

IPB030N08N3 G

5 Typ. output characteristics

I ₉4R"V _9Hꢃꢉ T _Vꢐ ꢍ ꢑ Tꢋ

6 Typ. drain-source on resistance

_9H"[Z#4R"I ₉ꢃꢉ T _Vꢐ ꢍ ꢑ Tꢋ

@1B1=5D5Bꢘ V _=H

500

ꢆ ꢇ .

ꢌ .

ꢑ .

ꢑ ꢀꢑ .

400

ꢓ .

300

ꢌ .

200

ꢓ .

ꢑ ꢀꢑ .

ꢆ ꢇ .

100

ꢑ .

ꢎ ꢀꢑ .

100

200

I _D[A]

300

400

V _DS[V]

7 Typ. transfer characteristics

I ₉4R"V _=Hꢃꢉ KV _9Hg5*gI ₉gR _9H"[Z#YMd

@1B1=5D5Bꢘ T _V

8 Typ. forward transconductance

g _{R_}4R"I ₉ꢃꢉ T _Vꢐ ꢍ ꢑ Tꢋ

300

250

200

150

100

300

200

100

ꢆ ꢓ ꢑ Tꢋ

ꢍ ꢑ Tꢋ

100

200

300

V _GS[V]

I _D[A]

+ 5Fꢀ ꢍ ꢀꢖ

@175 ꢑ

ꢍ ꢇ ꢇ ꢏ ꢄꢆ ꢍ ꢄꢆ ꢌ

IPB030N08N3 G

9 Drain-source on-state resistance

10 Typ. gate threshold voltage

_=H"`T#4R"T _Vꢃꢉ V _=H4V _9H

_9H"[Z#4R"T _Vꢃꢉ I ₉ꢐ ꢆ ꢇ ꢇ ꢒ ꢉ V _=Hꢐ ꢆ ꢇ .

@1B1=5D5Bꢘ I ₉

ꢆ ꢑ ꢑ ꢇ V ꢒ

YMd

ꢆ ꢑ ꢑ V ꢒ

`e\

-60

-20

100

140

180

-60

-20

T _j[°C]

100

140

180

T _j[°C]

11 Typ. capacitances

12 Forward characteristics of reverse diode

I _<4R"V _H9

C 4R"V _9Hꢃꢉ V _=Hꢐ ꢇ .ꢉ f ꢐ ꢆ & " J

@1B1=5D5Bꢘ T _V

10³

10000

8U__

8[__

ꢆ ꢓ ꢑ Tꢋ ꢅ ꢏ ꢔ ꢈ

ꢍ ꢑ Tꢋ

ꢆ ꢓ ꢑ Tꢋ

1000

10²

ꢍ ꢑ Tꢋ ꢅ ꢏ ꢔ ꢈ

8^__

10¹

100

10⁰

0.5

1.5

V _DS[V]

V _SD[V]

+ 5Fꢀ ꢍ ꢀꢖ

@175 ꢌ

ꢍ ꢇ ꢇ ꢏ ꢄꢆ ꢍ ꢄꢆ ꢌ

IPB030N08N3 G

13 Avalanche characteristics

_6H4R"t _6Jꢃꢉ R _=Hꢐ ꢍ ꢑ "

14 Typ. gate charge

_=H4R"Q _SM`Qꢃꢉ I ₉ꢐ ꢆ ꢇ ꢇ ꢒ @E<C54

@1B1=5D5Bꢘ T _{V"_`M^`#}

@1B1=5D5Bꢘ V ₉₉

1000

ꢎ ꢇ .

ꢍ ꢇ .

ꢌ ꢇ .

100

ꢍ ꢑ Tꢋ

ꢆ ꢇ ꢇ Tꢋ

ꢆ ꢑ ꢇ Tꢋ

0.1

100

1000

100

t _AV[µs]

Q _gate[nC]

15 Drain-source breakdown voltage

16 Gate charge waveforms

_7G"9HH#4R"T _Vꢃꢉ I ₉ꢐ ꢆ =ꢒ

V _=H

Q _g

V _{S _"`T#}

Q _S"`T#

Q _{_c}

Q _SP

Q _gate

Q _{S_}

-60

-20

100

140

180

T _j[°C]

+ 5Fꢀ ꢍ ꢀꢖ

@175 ꢓ

ꢍ ꢇ ꢇ ꢏ ꢄꢆ ꢍ ꢄꢆ ꢌ

IPB030N08N3 G

PG-TO263-7 (D²-Pak)

+ 5Fꢀ ꢍ ꢀꢖ

@175 ꢔ

ꢍ ꢇ ꢇ ꢏ ꢄꢆ ꢍ ꢄꢆ ꢌ

IPB030N08N3 G

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of

conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information

on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with

the express written approval of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-support device or system or to affect

the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user

or other persons may be endangered.

+ 5Fꢀ ꢍ ꢀꢖ

@175 ꢏ

ꢍ ꢇ ꢇ ꢏ ꢄꢆ ꢍ ꢄꢆ ꢌ

IPB030N08N3 G [INFINEON]

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