IPB100N12S3-05 [INFINEON]
Power Field-Effect Transistor;
| 型号： | IPB100N12S3-05 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总9页 (文件大小：405K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB100N12S3-05
IPI100N12S3-05, IPP100N12S3-05
OptiMOS®-T Power-Transistor
Product Summary
VDS
120
4.8
V
RDS(on),max (SMD version)
mW
A
ID
100
Features
• OptiMOS™ - power MOSFET for automotive applications
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Type
Package
Marking
IPB100N12S3-05
IPI100N12S3-05
IPP100N12S3-05
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
3PN1205
3PN1205
3PN1205
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
Continuous drain current1)
I D
T C=25 °C, VGS=10 V
100
100
A
T C=100 °C,
VGS=10 V2)
Pulsed drain current2)
I D,pulse
EAS
T C=25 °C
400
1445
100
±20
300
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
I D=50A
mJ
A
I AS
-
VGS
-
V
Ptot
T C=25 °C
Power dissipation
W
T j, T stg
Operating and storage temperature
-
-55 ... +175
°C
Rev. 1.0
page 1
2016-06-20
IPB100N12S3-05
IPI100N12S3-05, IPP100N12S3-05
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Thermal characteristics2)
R thJC
R thJA
R thJA
Thermal resistance, junction - case
-
-
-
-
-
-
0.5
62
K/W
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
minimal footprint
-
-
-
-
62
40
6 cm2 cooling area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V(BR)DSS VGS=0 V, I D= 1 mA
VGS(th) VDS=VGS, I D=240µA
Drain-source breakdown voltage
Gate threshold voltage
120
2.0
-
-
V
3.0
4.0
VDS=120 V, VGS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
0.01
1
1
µA
VDS=120 V, VGS=0 V,
T j=125 °C2)
100
I GSS
VGS=20V, VDS=0V
Gate-source leakage current
-
-
-
100 nA
R DS(on) VGS=10V, I D=100A
Drain-source on-state resistance
4.3
5.1
4.8
mW
VGS=10V, I D=100A,
SMD version
-
4.0
Rev. 1.0
page 2
2016-06-20
IPB100N12S3-05
IPI100N12S3-05, IPP100N12S3-05
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
8900
2520
220
34
11570 pF
3276
VGS=0V, VDS=25V,
f =1MHz
330
-
-
-
-
ns
17
VDD=20V, VGS=10V,
I D=80A, R G=3.5W
t d(off)
t f
Turn-off delay time
Fall time
60
20
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
46
34
61
51
185
-
nC
Q gd
VDD=96V, I D=100A,
VGS=0 to 10V
Q g
139
5.5
Vplateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
I S
-
-
-
-
100
400
T C=25°C
I S,pulse
VGS=0V, I F=100A,
T j=25°C
VSD
Diode forward voltage
0.6
1
1.2
V
VR=60V, I F=50A,
diF/dt =100A/µs
Reverse recovery time2)
Reverse recovery charge2)
t rr
-
108
-
ns
nC
Q rr
-
380
-
1) Current is limited by bondwire; with an R thJC = 0.5K/W the chip is able to carry 165A at 25°C. For detailed
information see Application Note ANPS071E
2) Defined by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2016-06-20
IPB100N12S3-05
IPI100N12S3-05, IPP100N12S3-05
1 Power dissipation
2 Drain current
Ptot = f(T C); VGS = 10 V
I D = f(T C); VGS = 10 V; SMD
300
250
200
150
100
50
100
80
60
40
20
0
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D = f(V DS); T C = 25 °C; D = 0; SMD
parameter: t p
parameter: D =t p/T
101
1000
1 µs
10 µs
100
100 µs
100
0.5
10-1
0.1
0.05
1 ms
10
0.01
10-2
single pulse
10-3
1
10-6
10-5
10-4
10-3
10-2
10-1
100
0.1
1
10
100
1000
tp [s]
VDS [V]
Rev. 1.0
page 4
2016-06-20
IPB100N12S3-05
IPI100N12S3-05, IPP100N12S3-05
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C; SMD
parameter: VGS
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C; SMD
parameter: VGS
400
9
8
7
6
5
4
3
10 V
7 V
6.5 V
360
320
280
240
200
160
120
80
5.5 V
6 V
5.5 V
6 V
6.5 V
7 V
10 V
5 V
40
0
0
1
2
3
4
5
0
20 40 60 80 100 120 140 160 180
VDS [V]
ID [A]
7 Typ. transfer characteristics
I D = f(V GS); VDS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 100 A; V GS = 10 V; SMD
350
300
250
200
150
8.5
7.5
6.5
5.5
4.5
3.5
2.5
100
175 °C
50
25 °C
-55 °C
0
3
4
5
6
7
-60
-20
20
60
100
140
180
VGS [V]
Tj [°C]
Rev. 1.0
page 5
2016-06-20
IPB100N12S3-05
IPI100N12S3-05, IPP100N12S3-05
9 Typ. gate threshold voltage
VGS(th) = f(T j); VGS = VDS
parameter: I D
10 Typ. capacitances
C = f(VDS); VGS = 0 V; f = 1 MHz
4
3.5
3
104
103
102
Ciss
1200 µA
Coss
240 µA
2.5
2
Crss
1.5
0
5
10
15
20
25
30
-60
-20
20
60
100
140
180
VDS [V]
Tj [°C]
11 Typical forward diode characteristics
12 Typ. avalanche characteristics
I A S= f(t AV
IF = f(VSD)
)
parameter: T j
parameter: Tj(start)
103
1000
102
100
25 °C
100 °C
150 °C
25 °C
175 °C
101
10
100
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.1
1
10
tAV [µs]
100
1000
VSD [V]
Rev. 1.0
page 6
2016-06-20
IPB100N12S3-05
IPI100N12S3-05, IPP100N12S3-05
13 Typical avalanche energy
EAS = f(T j)
14 Typ. drain-source breakdown voltage
VBR(DSS) = f(T j); I D = 1 mA
parameter: I D
135
3500
3000
130
125
120
115
110
25 A
2500
2000
1500
50 A
1000
100 A
500
0
-55
-15
25
65
105
145
25
75
125
175
Tj [°C]
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
VGS = f(Q gate); I D = 100 A pulsed
parameter: VDD
10
9
8
7
6
5
4
3
2
1
0
V GS
Qg
24 V
96 V
V gs(th)
Qg(th)
Qsw
Qgd
Qgate
Qgs
0
20
40
60
80
100
120
140
Qgate [nC]
Rev. 1.0
page 7
2016-06-20
IPB100N12S3-05
IPI100N12S3-05, IPP100N12S3-05
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2016
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of non‑infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information
on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev. 1.0
page 8
2016-06-20
IPB100N12S3-05
IPI100N12S3-05, IPP100N12S3-05
Revision History
Version
Date
Changes
Revision 1.0
20.06.2016 Final Data Sheet
Rev. 1.0
page 9
2016-06-20
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