IPB100P03P3L-04 [INFINEON]
OptiMOS-P Trench Power-Transistor; 的OptiMOS -P沟道功率三极管
| 型号： | IPB100P03P3L-04 |
| 厂家： | 
Infineon |
| 描述： | OptiMOS-P Trench Power-Transistor |
| 文件： | 总9页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB100P03P3L-04
IPI100P03P3L-04, IPP100P03P3L-04
OptiMOS®-P Trench Power-Transistor
Product Summary
VDS
-30
4
V
Features
R
DS(on),max (SMD version)
mΩ
• P-channel - Logic Level - Enhancement mode
I D
-100
A
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
• 175°C operating temperature
• Green package (RoHS Compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
• Intended for reverse battery protection
Type
Package
Marking
3P03L04
3P03L04
3P03L04
drain
pin 2
IPB100P03P3L-04
IPI100P03P3L-04
IPP100P03P3L-04
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
gate
pin 1
source
pin 3
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
T C=25°C,
GS=-10V
Continuous drain current1)
I D
-100
A
V
T C=100°C,
GS=-10V2)
-100
-400
450
V
Pulsed drain current2)
I D,pulse
EAS
T C=25°C
I D=-80A
Avalanche energy, single pulse
mJ
VGS
Gate source voltage
-16 / +5
200
V
Ptot
T C=25°C
Power dissipation
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... +175
55/175/56
Rev. 1.1
page 1
2007-09-25
IPB100P03P3L-04
IPI100P03P3L-04, IPP100P03P3L-04
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Thermal characteristics2)
R thJC
R thJA
R thJA
Thermal resistance, junction - case
-
-
-
-
0.65 K/W
62
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
minimal footprint
-
-
-
-
62
40
6 cm2 cooling area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V(BR)DSS
VGS(th)
V
V
GS=0V, I D=-250µA
DS=VGS
Drain-source breakdown voltage
Gate threshold voltage
-30
-1
-
-
V
,
-1.5
-2.1
I D=-475µA
V
DS=-30V, VGS=0V,
I DSS
Zero gate voltage drain current
-
-
-0.1
-10
-1
µA
T j=25°C
V
DS=-30V, VGS=0V,
-100
T j=125°C2)
I GSS
V
V
GS=-16V, VDS=0V
GS=-4.5V, I D=-50A
Gate-source leakage current
-
-
-10
4.8
-100 nA
R DS(on)
Drain-source on-state resistance
7.6
7.3
4.3
4
mΩ
V
GS=-4.5V, I D=-50A,
-
-
-
4.5
3.3
3.0
SMD version
V
GS=-10V, I D=-80A
V
GS=-10V, I D=-80A,
SMD version
Rev. 1.1
page 2
2007-09-25
IPB100P03P3L-04
IPI100P03P3L-04, IPP100P03P3L-04
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics2)
C iss
C oss
Crss
t d(on)
t r
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
-
-
-
-
-
-
-
7150
2150
1650
30
9300 pF
2800
V
GS=0V, VDS=-25V,
f =1MHz
2500
-
-
-
-
ns
V
V
DD=-15V,
GS=-10V, I D=-50A,
45
t d(off)
t f
Turn-off delay time
Fall time
200
180
R G=6Ω
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
25
55
33
82.5
200
-
nC
V
DD=-24V,
Q gd
I D=-80A,
Q g
150
-3.0
V
GS=0 to -10V
Vplateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
I S
T A=25°C
T A=25°C
-
-
-
-
-100
-400
I S,pulse
VSD
VGS=0V, I F=-80A
Diode forward voltage
Reverse recovery time2)
Reverse recovery charge2)
-0.6
-1
50
55
-1.2
V
VR=-15V, I F=-50A,
diF/dt =100A/µs
t rr
-
-
ns
Q rr
-
-
nC
1) Current is limited by bondwire; with an R thJC = 0.65 K/W the chip is able to carry I D=-195A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
2) Defined by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.1
page 3
2007-09-25
IPB100P03P3L-04
IPI100P03P3L-04, IPP100P03P3L-04
1 Power dissipation
2 Drain current
Ptot=f(T C); VGS ≤ -4 V
I D=f(T C); VGS ≤ -4 V
250
200
150
100
50
120
100
80
60
40
20
0
0
0
50
100
150
200
0
50
100
150
200
T
C [°C]
T
C [°C]
3 Safe operating area
I D=f(VDS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
thJC=f(t p)
Z
parameter: D =t p/T
100
1000
1 µs
0.5
limited by on-state
resistance
10 µs
100 µs
1 ms
10-1
100
10
1
0.1
0.05
0.01
10-2
single pulse
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
0.1
1
10
100
t p [s]
-V DS [V]
Rev. 1.1
page 4
2007-09-25
IPB100P03P3L-04
IPI100P03P3L-04, IPP100P03P3L-04
5 Typ. output characteristics
I D = f(VDS); T j = 25 °C
parameter: VGS
6 Typ. drain-source on-state resistance
DS(on) = f(I D); T j = 25 °C
R
parameter: VGS
400
16
10 V
5 V
4.5 V
3 V
3.5 V
14
12
10
8
300
200
100
0
4 V
3.5 V
6
4 V
4.5 V
5 V
4
3 V
10 V
2
2.5 V
0
0
20 40 60 80 100 120 140 160 180
0
1
2
3
4
5
6
-I D [A]
-V DS [V]
7 Typ. transfer characteristics
I D = f(VGS); VDS = 4V
parameter: T j
8 Typ. drain-source on-state resistance
R
DS(on) = f(T j); I D = -80 A; VGS = 10 V
200
5
175 °C
-55 °C
25 °C
4
3
2
1
0
150
100
50
0
1
2
3
4
5
-60
-20
20
60
100
140
180
-V GS [V]
T j [°C]
Rev. 1.1
page 5
2007-09-25
IPB100P03P3L-04
IPI100P03P3L-04, IPP100P03P3L-04
9 Typ. gate threshold voltage
GS(th) = f(T j); VGS = VDS
10 Typ. capacitances
V
C = f(VDS); VGS = 0 V; f = 1 MHz
parameter: I D
105
2
1.75
1.5
4750µA
475µA
1.25
1
Ciss
104
Coss
Crss
0.75
0.5
0.25
103
0
0
5
10
15
20
25
30
-60
-20
20
60
T j [°C]
100
140
180
-V DS [V]
11 Typical forward diode characteristicis
12 Typ. avalanche characteristics
AV = f(t AV
IF = f(VSD)
I
)
parameter: T j
parameter: Tj(start)
103
1000
102
100
10
25°C
100°C
150°C
25 °C
175 °C
101
100
1
1
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
10
100
1000
-V SD [V]
t
AV [µs]
Rev. 1.1
page 6
2007-09-25
IPB100P03P3L-04
IPI100P03P3L-04, IPP100P03P3L-04
13 Typical avalanche energy
AS = f(T j)
14 Drain-source breakdown voltage
BR(DSS) = f(T j); I D = 1 mA
E
V
parameter: I D
2000
37
35
33
31
29
27
25
20 A
1800
1600
1400
1200
1000
40 A
800
600
80 A
400
200
0
25
75
125
175
225
-60
-20
20
60
T j [°C]
100
140
180
T j [°C]
15 Typ. gate charge
GS = f(Q gate); I D = 80 A pulsed
16 Gate charge waveforms
V
parameter: VDD
12
VGS
8 V
32 V
10
8
Qg
6
4
2
Qgate
Qgd
Qgs
0
0
50
100
150
200
Q
gate [nC]
Rev. 1.1
page 7
2007-09-25
IPB100P03P3L-04
IPI100P03P3L-04, IPP100P03P3L-04
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2007
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of non‑infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information
on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev. 1.1
page 8
2007-09-25
IPB100P03P3L-04
IPI100P03P3L-04, IPP100P03P3L-04
Revision History
Version
Date
Changes
Type on page 1 changed from
IP_100P06P3L-04 to IP_100P03PL
25.09.2007 04
Rev 1.1
Rev. 1.1
page 9
2007-09-25
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