IPB160N04S2L-03 [INFINEON]
OptiMOS㈢ - T Power-Transistor; OptiMOS㈢ - T的功率三极管
| 型号： | IPB160N04S2L-03 |
| 厂家： | 
Infineon |
| 描述： | OptiMOS㈢ - T Power-Transistor |
| 文件： | 总8页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB160N04S2L-03
OptiMOS® - T Power-Transistor
Product Summary
Features
V DS
40
2.7
160
V
• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
R DS(on),max
I D
mΩ
A
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
PG-TO263-7-3
• 100% Avalanche tested
Type
Package
Ordering Code Marking
SP0002-18153 P2N04L03
IPB160N04S2L-03
PG-TO263-7-3
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T C=25 °C
Continuous drain current
160
160
A
T C=100 °C2)
T C=25 °C
Pulsed drain current2)
I D,pulse
E AS
640
I D=80 A, R GS=25 Ω
Avalanche energy, single pulse
810
mJ
V
V GS
±20
P tot
T C=25 °C
Power dissipation
300
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
Rev. 1.0
page 1
2006-03-02
IPB160N04S2L-03
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
R thJC
Thermal resistance, junction - case
SMD version, device on PCB
-
-
-
-
-
-
0.5
62
40
K/W
R thJA
minimal footprint
6 cm2 cooling area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=1 mA
Drain-source breakdown voltage
Gate threshold voltage
40
-
-
V
DS=V GS, I D=250 µA
1.2
1.6
2
V
DS=40 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
0.1
1
µA
T j=25 °C
V
DS=40 V, V GS=0 V,
-
-
-
10
1
100
T j=125 °C2)
I GSS
V
V
GS=20 V, V DS=0 V
GS=4.5 V, I D=80 A,
Gate-source leakage current
100 nA
R DS(on)
Drain-source on-state resistance
2.8
3.7
2.7
mΩ
SMD version
V
GS=10 V, I D=80 A,
R DS(on)
Drain-source on-state resistance
-
2.0
SMD version
Rev. 1.0
page 2
2006-03-02
IPB160N04S2L-03
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
6000
2200
700
20
-
-
-
-
-
-
-
pF
ns
V
GS=0 V, V DS=15 V,
C oss
Crss
t d(on)
t r
f =1 MHz
51
V
DD=20 V, V GS=10 V,
I D=160 A, R G=1.1 Ω
t d(off)
t f
Turn-off delay time
Fall time
75
30
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
20
46
28
90
230
-
nC
Q gd
V
V
DD=32 V, I D=160 A,
GS=0 to 5 V
Q g
163
3.4
V plateau
Gate plateau voltage
V
A
Reverse Diode
I S
Diode continuous forward current
Diode pulse current
-
-
-
-
160
640
T C=25 °C
I S,pulse
V
GS=0 V, I F=80 A,
V SD
Diode forward voltage
-
0.84
1.3
V
T j=25 °C
1) Current is limited by bondwire; with an R thJC = 0.5K/W the chip is able to carry 243A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
2) Defined by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2006-03-02
IPB160N04S2L-03
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
160
140
120
100
80
300
250
200
150
100
50
60
40
20
0
0
0
50
100
150
200
0
50
100
150
200
T
C [°C]
T
C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
thJC=f(t p)
Z
parameter: D =t p/T
1000
1
1 µs
limited by on-state
resistance
0.5
10 µs
100 µs
0.2
100
10
1
0.1
1 ms
0.1
0.05
0.02
0.01
0.01
single pulse
0
0
0
0
0
0
1
0.001
0.1
1
10
100
10-6
10-5
10-4
10-3
t p [s]
10-2
10-1
100
V
DS [V]
Rev. 1.0
page 4
2006-03-02
IPB160N04S2L-03
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
DS(on)=f(I D); T j=25 °C
R
parameter: V GS
parameter: V GS
200
12
10V
3.8V
4.5V
180
4.1V
10
160
140
120
100
80
3.2V
8
6
4
2
3.5V
3.2V
3.8V
3.5V
4.1V
60
4.5V
10V
40
3V
20
2.8V
0
0
0
0
1
2
3
20
40
60
80
100
V
DS [V]
I D [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
200
180
160
140
120
100
80
300
250
200
150
100
50
60
40
C °175
C °25
20
0
0
0
1
2
3
4
5
0
50
100
150
200
I
D [A]
V
GS [V]
Rev. 1.0
page 5
2006-03-02
IPB160N04S2L-03
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
GS(th)=f(T j); V GS=V DS
R
DS(on)=f(T j); I D=60 A; V GS=10 V
V
parameter: I D
4
2.5
2
1.5
1
3
1250µA
typ
250µA
2
1
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
T j [°C]
100
140
180
T j [°C]
11 Typ. capacitances
12 Typ. Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
10000
1000
Ciss
Coss
25 °C
100
10
175 °C
Crss
1000
100
1
0
5
10
15
DS [V]
20
25
30
0.0
0.5
1.0
V SD [V]
1.5
2.0
V
Rev. 1.0
page 6
2006-03-02
IPB160N04S2L-03
13 Typ. avalanche energy
AS=f(TJ)
14 Typ. gate charge
GS=f(Q gate); I D=160A pulsed
E
V
parameter: I D=80A, V DD=25V
parameter: V DD
900
12
800
700
600
500
400
300
200
100
0
8V
32V
10
8
6
4
2
0
0
25
75
125
175
40
80
Q
120
gate [nC]
160
200
T J [°C]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=1 mA
48
46
44
42
40
38
36
V GS
Q g
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.0
page 7
2006-03-02
IPB160N04S2L-03
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 2004
All Rights Reserved.
• Pb-free lead plating; RoHS compliant
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide
(see address list).
Warnings
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2006-03-02
相关型号：
IPB160N04S2L03ATMA1
Power Field-Effect Transistor, 160A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6
INFINEON
IPB160N04S4H1ATMA1
Power Field-Effect Transistor, 160A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6
INFINEON
IPB160N04S4L-H1
Power Field-Effect Transistor, 160A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263,
INFINEON
IPB160N04S4LH1ATMA1
Power Field-Effect Transistor, 160A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263,
INFINEON
IPB160N08S4-03
Power Field-Effect Transistor, 160A I(D), 80V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263,
INFINEON
IPB160N08S403ATMA1
Power Field-Effect Transistor, 160A I(D), 80V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263,
INFINEON
©2020 ICPDF网 联系我们和版权申明