IPB200N25N3G_10 [INFINEON]

OptiMOS3 Power-Transistor; OptiMOS3功率三极管


型号：	IPB200N25N3G_10
厂家：	Infineon
描述：	OptiMOS3 Power-Transistor OptiMOS3功率三极管
文件：	总11页 (文件大小：715K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IPB200N25N3 G IPP200N25N3 G

IPI200N25N3 G

$(*'#$%^TM3 Power-Transistor

Product Summary

Features

V_DS

250

9 ꢀ ꢁ# (!,,% *ꢂ ,-0+ !* *% 4% *

R_DS(on),max

I_D

9 ꢃ 6# % **% ,2 '!2% # (!0'% 6 R _DS(on)product (FOM)

9 % 07 *-5 -,ꢁ0% 1)12!,# % R _DS(on)

9 ꢄ ꢅ ꢆ 8ꢇ -. % 0!2),' 2% + . % 0!23 0%

9 ꢈ " ꢁ&0% % *% !$ . *!2),'ꢉ ꢊ -ꢋ ꢌ # -+ . *)!,2

9 ꢍ 3 !*)&)% $ !# # -0$ ),' 2- ꢎ ꢃ ꢏ ꢃ ꢇ ¹⁾for target application

9 ꢋ !*-'% ,ꢁ&0% % !## -0$ ),' 2- ꢐꢃ ꢇ ꢑ ꢄ ꢒ ꢓ ꢔ ꢁꢒ ꢁꢒ ꢄ

9 ꢐ$ % !* &-0 ()'(ꢁ&0% /3 % ,#7 15)2# (),' !,$ 17,# (0-,-3 1 0% # 2)&)#!2)-,

Type

IPB200N25N3 G

IPP200N25N3 G

IPI200N25N3 G

Package

Marking

PG-TO263-3

200N25N

PG-TO220-3

200N25N

PG-TO262-3

200N25N

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

Continuous drain current

Pulsed drain current²⁾

I _D,pulse

E _AS

256

I _D=47 A, R _GS=25 #

Avalanche energy, single pulse

Gate source voltage

320

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

300

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

¹⁾J-STD20 and JESD22

²⁾See figure 3

Rev. 2.3

page 1

2010-10-19

IPB200N25N3 G IPP200N25N3 G

IPI200N25N3 G

Values

typ.

Parameter

Symbol Conditions

Unit

min.

max.

Thermal characteristics

R _thJC

Thermal resistance, junction - case

0.5

K/W

R _thJA

minimal footprint

Thermal resistance, junction -

ambient

6 cm2 cooling area³⁾

Electrical characteristics, at T _j=25 °C, unless otherwise specified

Static characteristics

V _(BR)DSSV _GS=0 V, I _D=1 mA

V _GS(th)V _DS=V _GS, I _D=270 µA

Drain-source breakdown voltage

Gate threshold voltage

250

V _DS=200 V, V _GS=0 V,

T _j=25 °C

I _DSS

Zero gate voltage drain current

0.1

µA

V _DS=200 V, V _GS=0 V,

T _j=125 °C

100

I _GSS

V _GS=20 V, V _DS=0 V

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

100 nA

R _DS(on)V _GS=10 V, I _D=64 A

17.5

2.4

R _G

|V _DS|>2|I _D|R _DS(on)max

I _D=64 A

g _fs

Transconductance

122

³⁾Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm²(one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Rev. 2.3

page 2

2010-10-19

IPB200N25N3 G IPP200N25N3 G

IPI200N25N3 G

Values

typ.

Parameter

Symbol Conditions

Unit

min.

max.

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

C _iss

5340

297

7100 pF

V _GS=0 V, V _DS=100 V,

f =1 MHz

C _oss

C _rss

t _d(on)

t _r

395

V _DD=100 V,

V _GS=10 V, I _D=25 A,

R _G=1.6 #

t _d(off)

t _f

Turn-off delay time

Fall time

Gate Charge Characteristics⁴⁾

Gate to source charge

Gate to drain charge

Switching charge

Q _gs

Q _gd

V _DD=100 V, I _D=25 A,

V _GS=0 to 10 V

Q _sw

Q _g

4.2

135

Gate charge total

V _plateau

Q _oss

Gate plateau voltage

Output charge

V _DD=100 V, V _GS=0 V

179 nC

Reverse Diode

I _S

Diode continous forward current

Diode pulse current

T _C=25 °C

I _S,pulse

256

V _GS=0 V, I _F=64 A,

T _j=25 °C

V _SD

Diode forward voltage

1.2

t _rr

Reverse recovery time

170

780

V _R=100 V, I _F=25 A,

di _F/dt =100 A/µs

Q _rr

Reverse recovery charge

⁴⁾See figure 16 for gate charge parameter definition

Rev. 2.3

page 3

2010-10-19

IPB200N25N3 G IPP200N25N3 G

IPI200N25N3 G

1 Power dissipation

2 Drain current

P _tot=f(T _C)

I _D=f(T _C); V _GS: ꢄ ꢕ

320

280

240

200

160

120

100

150

200

100

150

200

T_C[°C]

3 Safe operating area

I _D=f(V _DS); T _C=25 °C; D =0

parameter: t _p

4 Max. transient thermal impedance

Z _thJC=f(t _p)

parameter: D =t _p/T

10³

10²

10¹

10⁰

10^-1

10⁰

1 µs

10 µs

100 µs

0.5

1 ms

0.2

10^-1

10 ms

0.1

0.05

0.02

0.01

single pulse

10^-2

10^-1

10⁰

10¹

10²

10³

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

V_DS[V]

t_p[s]

Rev. 2.3

page 4

2010-10-19

IPB200N25N3 G IPP200N25N3 G

IPI200N25N3 G

5 Typ. output characteristics

I _D=f(V _DS); T _j=25 °C

6 Typ. drain-source on resistance

R _DS(on)=f(I _D); T _j=25 °C

parameter: V _GS

150

10 V

7 V

125

100

4.5 V

5 V

7 V

10 V

4.5 V

100

120

140

V_DS[V]

I_D[A]

7 Typ. transfer characteristics

I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max

parameter: T _j

8 Typ. forward transconductance

g _fs=f(I _D); T _j=25 °C

140

120

100

180

160

140

120

100

175 °C

25 °C

100

125

V_GS[V]

I_D[A]

Rev. 2.3

page 5

2010-10-19

IPB200N25N3 G IPP200N25N3 G

IPI200N25N3 G

9 Drain-source on-state resistance

10 Typ. gate threshold voltage

R _DS(on)=f(T _j); I _D=64 A; V _GS=10 V

V _GS(th)=f(T _j); V _GS=V _DS

parameter: I _D

3.5

2700 µA

270 µA

2.5

98%

1.5

typ

0.5

-60

-20

100

140

180

-60

-20

100

140

180

T_j[°C]

11 Typ. capacitances

12 Forward characteristics of reverse diode

I _F=f(V _SD

C =f(V _DS); V _GS=0 V; f =1 MHz

)

parameter: T _j

10⁴

10³

Ciss

10³

Coss

10²

175 °C

25°C, 98%

10²

175°C, 98%

25 °C

10¹

Crss

10¹

10⁰

V_DS[V]

120

160

0.5

1.5

V_SD[V]

Rev. 2.3

page 6

2010-10-19

IPB200N25N3 G IPP200N25N3 G

IPI200N25N3 G

13 Avalanche characteristics

14 Typ. gate charge

V _GS=f(Q _gate); I _D=25 A pulsed

parameter: V _DD

I _AS=f(t _AV); R _GS=25 #

parameter: T _j(start)

200 V

125 V

50 V

Q_gate[nC]

15 Drain-source breakdown voltage

16 Gate charge waveforms

V _BR(DSS)=f(T _j); I _D=1 mA

290

280

270

260

250

240

230

220

-60

-20

100

140

180

T_j[°C]

IPB200N25N3 G IPP200N25N3 G

IPI200N25N3 G

PG-TO220-3: Outline

Rev. 2.3

page 8

2010-10-19

IPB200N25N3 G IPP200N25N3 G

IPI200N25N3 G

PG-TO263-3: Outline

Rev. 2.3

page 9

2010-10-19

IPB200N25N3 G IPP200N25N3 G

IPI200N25N3 G

PG-TO262-3: Outline

Rev. 2.3

page 10

2010-10-19

IPB200N25N3 G IPP200N25N3 G

IPI200N25N3 G

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Rev. 2.3

page 11

2010-10-19

IPB200N25N3G_10 [INFINEON]

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