IPB230N06L3G [INFINEON]
OptiMOS?3 Power-Transistor; 的OptiMOS ™ 3功率三极管
| 型号： | IPB230N06L3G |
| 厂家： | 
Infineon |
| 描述： | OptiMOS?3 Power-Transistor |
| 文件： | 总10页 (文件大小：286K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB230N06L3 G IPP230N06L3 G
OptiMOS™3 Power-Transistor
Product Summary
Features
V DS
60
23
30
V
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
R DS(on),max
I D
mΩ
A
• N-channel, logic level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
IPB230N06L3 G
IPP230N06L3 G
Package
Marking
PG-TO263-3
230N06L
PG-TO220-3
230N06L
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
T C=25 °C2)
I D
Continuous drain current
30
21
A
T C=100 °C
Pulsed drain current2)
I D,pulse
E AS
T C=25 °C
120
Avalanche energy, single pulse3)
Gate source voltage
I D=20 A, R GS=25 Ω
13
mJ
V
V GS
±20
P tot
T C=25 °C
Power dissipation
36
W
°C
T j, T stg
Operating and storage temperature
-55 ... 175
1)J-STD20 and JESD22
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
Rev. 2.2
page 1
2010-01-22
IPB230N06L3 G IPP230N06L3 G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
Thermal resistance,
-
-
-
-
-
-
4.2
62
40
K/W
R thJA
minimal footprint
6 cm² cooling area4)
junction - ambient
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=1 mA
Drain-source breakdown voltage
Gate threshold voltage
60
-
-
V
V GS(th)
V DS=V GS, I D=11 µA
1.2
1.7
2.2
V DS=60 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
0.1
10
1
µA
V
DS=60 V, V GS=0 V,
100
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
-
-
1
100 nA
R DS(on) V GS=10 V, I D=30 A
Drain-source on-state resistance
19.0
23
mΩ
V
GS=4.5 V, I D=15 A
-
-
28.6
18.7
40.8
V GS=10 V, I D=30 A,
R DS(on)
Drain-source on-state resistance
23.0
(SMD)
V
GS=4.5 V, I D=15 A,
-
-
28.3
0.9
31
40.8
(SMD)
R G
g fs
Gate resistance
-
-
Ω
|V DS|>2|I D|R DS(on)max
I D=30 A
,
Transconductance
16
S
2
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.2
page 2
2010-01-22
IPB230N06L3 G IPP230N06L3 G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
1200
270
16
9
1600 pF
V GS=0 V, V DS=30 V,
f =1 MHz
C oss
C rss
t d(on)
t r
-
-
-
-
-
-
ns
3
V
DD=30 V, V GS=10 V,
I D=30 A, R G=3 Ω
t d(off)
t f
Turn-off delay time
Fall time
19
3
Gate Charge Characteristics5)
Gate to source charge
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
5
2
-
-
nC
Q gd
V DD=30 V, I D=30 A,
Q sw
Q g
5
-
V
GS=0 to 4.5 V
Gate charge total
7
10
-
V plateau
Q oss
Gate plateau voltage
Output charge
4.2
13
V
V DD=30 V, V GS=0 V
17
nC
Reverse Diode
I S
Diode continous forward current
-
-
-
-
30
A
T C=25 °C
I S,pulse
Diode pulse current
120
V GS=0 V, I F=30 A,
T j=25 °C
V SD
Diode forward voltage
-
1.0
1.2
V
t rr
Reverse recovery time
-
-
27
23
-
-
ns
V R=30 V, I F=30A,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
nC
5) See figure 16 for gate charge parameter definition
Rev. 2.2
page 3
2010-01-22
IPB230N06L3 G IPP230N06L3 G
1 Power dissipation
2 Drain current
P
tot=f(T C)
I D=f(T C); V GS≥10 V
40
30
25
20
15
10
5
30
20
10
0
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC=f(t p)
I D=f(V DS); T C=25 °C; D =0
parameter: t p
parameter: D =t p/T
103
101
limited by on-state
resistance
102
1 µs
0.5
10 µs
100 µs
101
100
0.2
1 ms
10 ms
DC
0.1
0.05
100
0.02
0.01
single pulse
10-1
10-1
10-1
100
101
102
V DS [V]
t p [s]
Rev. 2.2
page 4
2010-01-22
IPB230N06L3 G IPP230N06L3 G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
120
45
4.5 V
3.5 V
10 V
5 V
4 V
7 V
6 V
6 V
100
80
60
40
20
0
40
35
30
25
20
15
5 V
4.5 V
4 V
7 V
10 V
3.5 V
3 V
0
1
2
3
4
5
0
20
40
60
80
100
120
V DS [V]
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
80
60
40
20
40
30
20
10
0
175 °C
25 °C
0
0
1
2
3
4
5
6
0
10
20
30
40
50
ID [A]
V GS [V]
Rev. 2.2
page 5
2010-01-22
IPB230N06L3 G IPP230N06L3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)=f(T j); I D=30 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
44
40
36
32
3
2.5
2
110 µA
28
1.5
1
11µA
max
24
20
16
12
typ
0.5
0
-60
-20
20
60
T j [°C]
100
140
180
-60
-20
20
60
T j [°C]
100
140
180
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
104
103
Ciss
103
102
25 °C, 98%
Coss
175 °C, 98%
102
25 °C
Crss
101
175 °C
101
100
0
0
20
40
60
0.5
1
1.5
2
V DS [V]
V SD [V]
Rev. 2.2
page 6
2010-01-22
IPB230N06L3 G IPP230N06L3 G
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
GS=f(Q gate); I D=30 A pulsed
V
I
parameter: T j(start)
parameter: V DD
100
12
30 V
10
8
12 V
48 V
100 °C
150 °C
25 °C
6
10
4
2
0
1
0
2
4
6
8
10
12
14
16
18
0.1
1
10
100
1000
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=1 mA
70
V GS
Q g
65
60
55
50
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
-60
-20
20
60
100
140
180
T j [°C]
Rev. 2.2
page 7
2010-01-22
IPB230N06L3 G IPP230N06L3 G
PG-TO220-3
Rev. 2.2
page 8
2010-01-22
IPB230N06L3 G IPP230N06L3 G
PG-TO263 (D²-Pak)
Rev. 2.2
page 9
2010-01-22
IPB230N06L3 G IPP230N06L3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.2
page 10
2010-01-22
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