IPB60R250CP [INFINEON]
CoolMOSTM Power Transistor; CoolMOSTM功率晶体管
| 型号： | IPB60R250CP |
| 厂家： | 
Infineon |
| 描述： | CoolMOSTM Power Transistor |
| 文件： | 总10页 (文件大小：265K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB60R250CP
CoolMOSTM Power Transistor
Features
Product Summary
DS @ Tj,max
R DS(on),max
Q g,typ
V
650
0.250
26
V
• Lowest figure-of-merit RONxQg
• Ultra low gate charge
Ω
nC
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
P-TO263-3
• Pb-free lead plating; RoHS compliant
CoolMOS is designed for:
Hard switching SMPS topologies
Type
Package
Marking
IPB60R250CP
P-TO263
6R250P
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
12
Parameter
Symbol Conditions
Unit
I D
T C=25 °C
T C=100 °C
T C=25 °C
Continuous drain current
A
8
Pulsed drain current2)
40
I D,pulse
E AS
E AR
I AR
I D=5.2 A, V DD=50 V
I D=5.2 A, V DD=50 V
Avalanche energy, single pulse
Avalanche energy, repetitive t AR
345
0.52
5.2
mJ
2),3)
2),3)
A
Avalanche current, repetitive t AR
MOSFET dv /dt ruggedness
Gate source voltage
V
DS=0...480 V
50
dv /dt
V/ns
V
V GS
±20
static
±30
AC (f >1 Hz)
T C=25 °C
P tot
104
-55 ... 150
Power dissipation
W
T j, T stg
Operating and storage temperature
°C
Rev. 2.1
page 1
2009-04-01
IPB60R250CP
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
7.8
Parameter
Symbol Conditions
Unit
I S
Continuous diode forward current
Diode pulse current2)
Reverse diode dv /dt 4)
A
T C=25 °C
I S,pulse
40
dv /dt
15
V/ns
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
1.2
62
K/W
Thermal resistance, junction -
ambient
R thJA
T sold
leaded
Soldering temperature,
wavesoldering only allowed at leads
1.6 mm (0.063 in.)
from case for 10 s
-
-
260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=250 µA
DS=V GS, I D=0,44 mA
Drain-source breakdown voltage
Gate threshold voltage
600
2.5
-
-
V
3
3.5
V
DS=600 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
-
1
-
µA
T j=25 °C
V
DS=600 V, V GS=0 V,
-
-
-
10
-
T j=150 °C
I GSS
V
V
GS=20 V, V DS=0 V
GS=10 V, I D=7.8 A,
Gate-source leakage current
100 nA
R DS(on)
Drain-source on-state resistance
0.22
0.25
Ω
T j=25 °C
V
GS=10 V, I D=7.8 A,
-
-
0.59
1.3
-
T j=150 °C
R G
Gate resistance
f =1 MHz, open drain
-
Ω
Rev. 2.1
page 2
2009-04-01
IPB60R250CP
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
C iss
Input capacitance
Output capacitance
-
-
1200
54
-
-
pF
V
GS=0 V, V DS=100 V,
f =1 MHz
C oss
Effective output capacitance, energy
related5)
C o(er)
-
-
55
-
-
V
GS=0 V, V DS=0 V
to 480 V
Effective output capacitance, time
related6)
C o(tr)
150
t d(on)
t r
t d(off)
t f
Turn-on delay time
Rise time
-
-
-
-
40
17
-
-
-
-
ns
V
V
DD=400 V,
GS=10 V, I D=7.8 A,
Turn-off delay time
Fall time
110
12
R G=23.1 Ω
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
6
9
-
-
nC
Q gd
V
V
DD=400 V, I D=7.8 A,
GS=0 to 10 V
Q g
26
5.0
35
-
V plateau
Gate plateau voltage
V
V
Reverse Diode
V
GS=0 V, I F=7.8 A,
V SD
Diode forward voltage
-
0.9
1.2
T j=25 °C
t rr
Reverse recovery time
-
-
-
330
4.5
27
-
-
-
ns
µC
A
V R=400 V, I F=I S,
di F/dt =100 A/µs
Q rr
I rrm
Reverse recovery charge
Peak reverse recovery current
1) J-STD20 and JESD22
2) Pulse width t p limited by T j,max
3) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.
4) ISD≤ID, di/dt≤200A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.
5) C o(er) is a fixed capacitance that gives the same stored energy asC oss while V DS is rising from 0 to 80% V DSS.
6) C o(tr) is a fixed capacitance that gives the same charging time asC oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.1
page 3
2009-04-01
IPB60R250CP
1 Power dissipation
2 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
P
tot=f(T C)
102
125
limited by on-state
resistance
1 µs
100
75
10 µs
101
100 µs
1 ms
DC
50
10 ms
100
25
10-1
0
0
100
101
102
103
40
80
120
160
T
C [°C]
V
DS [V]
3 Max. transient thermal impedance
thJC=f(t P)
4 Typ. output characteristics
I D=f(V DS); T j=25 °C
Z
parameter: D=t p/T
parameter: V GS
101
45
20 V
10V
100
30
8 V
0.5
6 V
0.2
0.1
5.5 V
0.05
10-1
15
0.02
0.01
5 V
single pulse
4.5 V
10-2
0
10-5
10-4
10-3
10-2
10-1
100
0
5
10
DS [V]
15
20
t
p [s]
V
Rev. 2.1
page 4
2009-04-01
IPB60R250CP
5 Typ. output characteristics
I D=f(V DS); T j=150 °C
parameter: V GS
6 Typ. drain-source on-state resistance
DS(on)=f(I D); T j=150 °C
R
parameter: V GS
25
20
15
1.8
7 V
10 V
6 V
1.6
1.4
1.2
1
5.5 V
10 V
8 V
6.5 V
5 V
4.5 V
6 V
10
0.8
0.6
5.5 V
5 V
5
0
0.4
0
0
5
10
DS [V]
15
20
10
20
D [A]
30
40
I
V
7 Drain-source on-state resistance
8 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
R
DS(on)=f(T j); I D=7.8 A; V GS=10 V
60
50
40
30
20
10
0
0.8
C °25
0.6
0.4
C °150
typ
98 %
0.2
0
0
2
4
6
8
10
-60
-20
20
60
100
140
180
T j [°C]
V
GS [V]
Rev. 2.1
page 5
2009-04-01
IPB60R250CP
9 Typ. gate charge
GS=f(Q gate); I D=7.8 A pulsed
10 Forward characteristics of reverse diode
I F=f(V SD
V
)
parameter: V DD
parameter: T j
102
10
25 °C, 98%
8
6
4
2
150 °C, 98%
101
120 V
25 °C
150 °C
400 V
100
10-1
0
0
0
0.5
1
1.5
2
5
10
15
20
25
Q
gate [nC]
V
SD [V]
11 Avalanche energy
12 Drain-source breakdown voltage
E
AS=f(T j); I D=5.2 A; V DD=50 V
V
BR(DSS)=f(T j); I D=0.25 mA
350
300
250
200
150
100
50
700
660
620
580
540
0
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
Rev. 2.1
page 6
2009-04-01
IPB60R250CP
13 Typ. capacitances
14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz
E oss= f(V DS)
104
9
8
7
6
5
4
3
2
1
Ciss
103
102
Coss
101
Crss
100
0
0
0
100
200
300
DS [V]
400
500
100
200
300
400
500
600
V
DS [V]
V
Rev. 2.1
page 7
2009-04-01
IPB60R250CP
Definition of diode switching characteristics
Rev. 2.1
page 8
2009-04-01
IPB60R250CP
PG-TO263-3-2: Outline
Dimensions in mm/inches
Rev. 2.1
page 9
2009-04-01
IPB60R250CP
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
(www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.1
page 10
2009-04-01
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