IPB60R299CP [INFINEON]
CoolMOSTM Power Transistor; CoolMOSTM功率晶体管
| 型号： | IPB60R299CP |
| 厂家： | 
Infineon |
| 描述： | CoolMOSTM Power Transistor |
| 文件： | 总10页 (文件大小：291K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB60R299CP
CoolMOSTM Power Transistor
Features
Product Summary
DS @ Tj,max
R DS(on),max
Q g,typ
V
650
0.299
22
V
• Lowest figure-of-merit RONxQg
• Ultra low gate charge
Ω
nC
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
PG-TO263
• Pb-free lead plating; RoHS compliant
CoolMOS CP is designed for:
Hard switching SMPS topologies
Type
Package
Marking
IPB60R299CP
PG-TO263
6R299P
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T C=25 °C
T C=100 °C
T C=25 °C
11
7
Continuous drain current
A
Pulsed drain current2)
34
290
I D,pulse
E AS
I D=4.4 A, V DD=50 V
I D=4.4 A, V DD=50 V
Avalanche energy, single pulse
mJ
A
2),3)
2),3)
E AR
0.44
4.4
Avalanche energy, repetitive t AR
I AR
Avalanche current, repetitive t AR
V
DS=0...480 V
50
±20
MOSFET dv /dt ruggedness
dv /dt
V/ns
V
V GS
Gate source voltage
static
±30
AC (f >1 Hz)
T C=25 °C
P tot
96
Power dissipation
W
T j, T stg
-55 ... 150
60
Operating and storage temperature
Mounting torque
°C
M3 and M3.5 screws
page 1
Ncm
Rev. 2.0
2007-11-22
IPB60R299CP
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
6.6
Parameter
Symbol Conditions
Unit
I S
Continuous diode forward current
Diode pulse current2)
Reverse diode dv /dt 4)
A
T C=25 °C
I S,pulse
34
dv /dt
15
V/ns
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
1.3
62
K/W
SMD version, device
R thJA
on PCB, minimal
footprint
Thermal resistance, junction -
ambient
SMD version, device
on PCB, 6 cm2 cooling
area3)
-
-
35
-
-
Soldering temperature,
reflowsoldering
T sold
reflow MSL 1
260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=250 µA
DS=V GS, I D=0,44 mA
Drain-source breakdown voltage
Gate threshold voltage
600
2.5
-
-
V
3
3.5
V
DS=600 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
-
1
-
µA
T j=25 °C
V
DS=600 V, V GS=0 V,
-
-
-
10
-
T j=150 °C
I GSS
V
V
GS=20 V, V DS=0 V
GS=10 V, I D=6.6 A,
Gate-source leakage current
100 nA
R DS(on)
Drain-source on-state resistance
0.27
0.299
Ω
T j=25 °C
V
GS=10 V, I D=6.6 A,
-
-
0.73
1.9
T j=150 °C
R G
Gate resistance
f =1 MHz, open drain
-
Ω
Rev. 2.0
page 2
2007-11-22
IPB60R299CP
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
C iss
Input capacitance
Output capacitance
-
-
1100
60
-
-
pF
ns
V
GS=0 V, V DS=100 V,
f =1 MHz
C oss
Effective output capacitance, energy
related5)
C o(er)
-
-
46
-
-
V
GS=0 V, V DS=0 V
to 480 V
Effective output capacitance, time
related6)
C o(tr)
120
t d(on)
t r
t d(off)
t f
Turn-on delay time
Rise time
-
-
-
-
10
5
-
-
-
-
V
V
DD=400 V,
GS=10 V, I D=6.6 A,
Turn-off delay time
Fall time
40
5
R G=4.3 Ω
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
5
-
-
nC
Q gd
7.6
22
5.0
V
V
DD=400 V, I D=6.6 A,
GS=0 to 10 V
Q g
29
-
V plateau
Gate plateau voltage
V
V
Reverse Diode
V
GS=0 V, I F=6.6 A,
V SD
Diode forward voltage
-
0.9
1.2
T j=25 °C
t rr
Reverse recovery time
-
-
-
300
3.9
26
-
-
-
ns
µC
A
V R=400 V, I F=I S,
di F/dt =100 A/µs
Q rr
I rrm
Reverse recovery charge
Peak reverse recovery current
1) J-STD20 and JESD22
2) Pulse width t p limited by T j,max
3) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.
4) ISD≤ID, di/dt≤200A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.
5) C o(er) is a fixed capacitance that gives the same stored energy asC oss while V DS is rising from 0 to 80% V DSS.
6) C o(tr) is a fixed capacitance that gives the same charging time asC oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.0
page 3
2007-11-22
IPB60R299CP
1 Power dissipation
2 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
P
tot=f(T C)
102
100
limited by on-state
resistance
1 µs
75
50
25
10 µs
101
100 µs
1 ms
DC
100
10 ms
10-1
0
0
100
101
102
103
40
80
120
160
T
C [°C]
V
DS [V]
3 Max. transient thermal impedance
thJC=f(t P)
4 Typ. output characteristics
I D=f(V DS); T j=25 °C
Z
parameter: D=t p/T
parameter: V GS
101
45
30
15
0
10V
12 V
20 V
8 V
100
0.5
0.2
6 V
0.1
0.05
10-1
0.02
5.5 V
0.01
5 V
single pulse
4.5 V
10-2
10-5
10-4
10-3
10-2
10-1
100
0
5
10
15
20
t
p [s]
V
DS [V]
Rev. 2.0
page 4
2007-11-22
IPB60R299CP
6 Typ. drain-source on-state resistance
DS(on)=f(I D); T j=150 °C
5 Typ. output characteristics
I D=f(V DS); T j=150 °C
parameter: V GS
R
parameter: V GS
25
20
15
10
5
1.8
1.6
1.4
1.2
1
5 V
6 V
7 V
5.5 V
20 V
6 V
12 V
6.5 V
10 V
8 V
10 V
5.5 V
0.8
0.6
0.4
0.2
5 V
4.5 V
0
0
0
0
5
10
15
20
5
10
15
20
25
I
D [A]
V
DS [V]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
R
DS(on)=f(T j); I D=6.6 A; V GS=10 V
50
40
30
20
10
0
1
C °25
0.8
0.6
0.4
C °150
typ
98 %
0.2
0
0
2
4
6
8
10
-60
-20
20
60
T j [°C]
100
140
180
V
GS [V]
Rev. 2.0
page 5
2007-11-22
IPB60R299CP
9 Typ. gate charge
GS=f(Q gate); I D=6.6 A pulsed
10 Forward characteristics of reverse diode
I F=f(V SD
V
)
parameter: V DD
parameter: T j
102
10
9
8
7
6
5
4
3
2
1
25 °C, 98%
150 °C, 98%
101
120 V
25 °C
150 °C
400 V
100
10-1
0
0
0
0.5
1
1.5
2
5
10
Q
15
gate [nC]
20
25
V
SD [V]
11 Avalanche energy
12 Drain-source breakdown voltage
E
AS=f(T j); I D=4.4 A; V DD=50 V
V
BR(DSS)=f(T j); I D=0.25 mA
300
700
660
620
580
540
200
100
0
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
Rev. 2.0
page 6
2007-11-22
IPB60R299CP
13 Typ. capacitances
14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz
E oss= f(V DS)
105
104
8
6
4
2
Ciss
103
102
Coss
101
Crss
100
0
0
0
100
200
300
DS [V]
400
500
100
200
300
400
500
600
V
DS [V]
V
Rev. 2.0
page 7
2007-11-22
IPB60R299CP
Definition of diode switching characteristics
Rev. 2.0
page 8
2007-11-22
IPB60R299CP
PG-TO263-3-2/TO263-3-5/TO263-3-22: Outlines
Rev. 2.0
page 9
2007-11-22
IPB60R299CP
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
(www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.0
page 10
2007-11-22
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