IPB60R299CPA [INFINEON]
CoolMOS Power Transistor; 的CoolMOS功率晶体管
| 型号： | IPB60R299CPA |
| 厂家： | 
Infineon |
| 描述： | CoolMOS Power Transistor |
| 文件： | 总11页 (文件大小：350K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB60R299CPA
CoolMOSTM Power Transistor
Product Summary
V DS
600
0.299
22
V
R DS(on),max
Q g,typ
Ω
nC
Features
• Lowest figure-of-merit Ron x Qg
PG-TO263-3
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Automotive AEC Q101 qualified
• Green package (RoHS compliant)
CoolMOS CPA is specially designed for:
• DC/DC converters for Automotive Applications
Type
Package
Marking
IPB60R299CPA
PG-TO263-3
6R299A
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T C=25 °C
T C=100 °C
T C=25 °C
11
7
Continuous drain current
A
Pulsed drain current1)
34
I D,pulse
E AS
E AR
I AR
I D=4.4 A, V DD=50 V
I D=4.4 A, V DD=50 V
Avalanche energy, single pulse
290
mJ
1),2)
1),2)
0.44
4.4
Avalanche energy, repetitive t AR
A
Avalanche current, repetitive t AR
MOSFET dv /dt ruggedness
Gate source voltage
V DS=0...480 V
static
50
dv /dt
V GS
P tot
V/ns
V
±20
T C=25 °C
96
Power dissipation
W
T j
-40 ... 150
-40 ... 150
Operating temperature
Storage temperature
°C
T stg
Rev. 2.0
page 1
2009-09-09
IPB60R299CPA
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
6.6
Parameter
Symbol Conditions
Unit
I S
Continuous diode forward current
Diode pulse current1)
Reverse diode dv /dt 3)
A
T C=25 °C
I S,pulse
34
dv /dt
15
V/ns
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
1.3
62
K/W
SMD version, device
on PCB, minimal
footprint
R thJA
Thermal resistance, junction -
ambient
SMD version, device
on PCB, 6 cm2 cooling
area4)
-
-
35
-
-
Soldering temperature,
reflow soldering
T sold
MSL 1
245 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=250 µA
V GS(th) V DS=V GS, I D=0,44 mA
Drain-source breakdown voltage
Gate threshold voltage
600
2.5
-
-
V
3
3.5
V DS=600 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
-
-
-
-
-
1
µA
I GSS
V GS=20 V, V DS=0 V
100 nA
V GS=10 V, I D=6.6 A,
T j=25 °C
R DS(on)
0.27
0.299
Ω
Ω
V
GS=10 V, I D=6.6 A,
-
-
0.73
1.9
T j=150 °C
R G
Gate resistance
Rev. 2.0
f =1 MHz, open drain
-
page 2
2009-09-09
IPB60R299CPA
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
C iss
Input capacitance
Output capacitance
-
-
1100
60
-
-
pF
V
GS=0 V, V DS=100 V,
f =1 MHz
C oss
Effective output capacitance, energy
related5)
C o(er)
-
-
46
-
-
V GS=0 V, V DS=0 V
to 480 V
Effective output capacitance, time
related6)
C o(tr)
120
t d(on)
t r
t d(off)
t f
Turn-on delay time
Rise time
-
-
-
-
10
5
-
-
-
-
ns
V
V
DD=400 V,
GS=10 V, I D=6.6 A,
Turn-off delay time
Fall time
40
5
R G=4.3 Ω
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
5
-
-
nC
Q gd
7.6
22
5.0
V DD=400 V, I D=6.6 A,
V
GS=0 to 10 V
Q g
29
-
V plateau
Gate plateau voltage
V
V
Reverse Diode
V GS=0 V, I F=6.6 A,
T j=25 °C
V SD
Diode forward voltage
-
0.9
1.2
t rr
Reverse recovery time
-
-
-
300
3.9
26
-
-
-
ns
µC
A
V R=400 V, I F=I S,
di F/dt =100 A/µs
Q rr
I rrm
Reverse recovery charge
Peak reverse recovery current
1) Pulse width t p limited by T j,max
2) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
3)
I
≤I D, di /dt ≤200A/µs, V DClink=400V, V peak<V (BR)DSS, T j<T jmax, identical low side and high side switch.
SD
4) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection.
PCB is vertical without blown air.
5)
C
C
is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
o(er)
6)
o(tr)
Rev. 2.0
page 3
2009-09-09
IPB60R299CPA
1 Power dissipation
2 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
P tot=f(T C)
102
100
75
50
25
0
limited by on-state
resistance
1 µs
10 µs
101
100 µs
1 ms
DC
100
10 ms
10-1
0
40
80
120
160
100
101
102
103
T C [°C]
V DS [V]
3 Max. transient thermal impedance
Z thJC=f(t P)
4 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: D=t p/T
parameter: V GS
101
45
30
15
0
10V
12 V
20 V
8 V
100
0.5
0.2
6 V
0.1
0.05
10-1
0.02
5.5 V
0.01
5 V
single pulse
4.5 V
10-2
10-5
10-4
10-3
10-2
10-1
100
0
5
10
15
20
t p [s]
V DS [V]
Rev. 2.0
page 4
2009-09-09
IPB60R299CPA
5 Typ. output characteristics
I D=f(V DS); T j=150 °C
parameter: V GS
6 Typ. drain-source on-state resistance
R DS(on)=f(I D); T j=150 °C
parameter: V GS
25
20
15
10
5
1.8
1.6
5 V
6 V
7 V
5.5 V
20 V
6 V
12 V
1.4
1.2
1
6.5 V
10 V
8 V
10 V
5.5 V
0.8
0.6
0.4
0.2
0
5 V
4.5 V
0
0
5
10
15
20
0
5
10
15
20
25
I D [A]
V DS [V]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
R DS(on)=f(T j); I D=6.6 A; V GS=10 V
50
40
30
20
10
0
1
0.8
0.6
0.4
25 °C
150 °C
typ
98 %
0.2
0
0
2
4
6
8
10
-60
-20
20
60
T j [°C]
100
140
180
V GS [V]
Rev. 2.0
page 5
2009-09-09
IPB60R299CPA
9 Typ. gate charge
V GS=f(Q gate); I D=6.6 A pulsed
parameter: V DD
10 Forward characteristics of reverse diode
I F=f(V SD
)
parameter: T j
102
10
9
8
7
6
5
4
3
2
1
0
25 °C, 98%
150 °C, 98%
101
120 V
25 °C
150 °C
400 V
100
10-1
0
0.5
1
1.5
2
0
5
10
15
20
25
Q gate [nC]
V SD [V]
11 Avalanche energy
12 Drain-source breakdown voltage
E AS=f(T j); I D=4.4 A; V DD=50 V
V BR(DSS)=f(T j); I D=0.25 mA
300
700
660
620
580
540
200
100
0
25
75
125
175
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
Rev. 2.0
page 6
2009-09-09
IPB60R299CPA
13 Typ. capacitances
14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz
E oss= f(V DS)
105
104
8
6
4
2
Ciss
103
102
Coss
101
Crss
100
0
0
0
100
200
300
400
500
100
200
300
400
500
600
V DS [V]
V DS [V]
Rev. 2.0
page 7
2009-09-09
IPB60R299CPA
Definition of diode switching characteristics
Rev. 2.0
page 8
2009-09-09
IPB60R299CPA
PG-TO263-3: Outlines
Rev. 2.0
page 9
2009-09-09
IPB60R299CPA
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of non‑infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information
on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev. 2.0
page 10
2009-09-09
NOTIFICATION
N° 040/10
Information on N-Channel MOSFET products designed for automotive
applications
SalesName
Package
Products affected:
IPB60R099CPA
IPB60R199CPA
IPB60R299CPA
IPC60R075CPA
IPI60R099CPA
IPP60R099CPA
IPW60R045CPA
IPW60R075CPA
IPW60R099CPA
PG-TO263-3-2
PG-TO263-3-2
PG-TO263-3-2
Bare Die
PG-TO262-3-1
PG-TO220-3-1
PG-TO247-3-41
PG-TO247-3-41
PG-TO247-3-41
Dear Customer,
The devices listed for this notification are sensitive to hard commutation of the conducting body diode. This
operating condition can occur in half-bridge configurations used in ZVS phase shift and resonant switching PWM
converters. Using the device under such conditions may result in violation of the datasheet specification limits and
may lead to permanent damage of the device.
Please take care that in the context of the application described above the datasheet limits are not exceeded.
Best Regards
Michael Paulu
If you have any questions, please do not hesitate to contact your local Sales office.
2010-05-12
Page 1 of 1
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