IPD048N06L3GXT [INFINEON]
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| 型号： | IPD048N06L3GXT |
| 厂家： | 
Infineon |
| 描述： | 暂无描述 晶体 晶体管 功率场效应晶体管 开关 脉冲 |
| 文件： | 总9页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPD048N06L3 G
OptiMOS(TM)3 Power-Transistor
Product Summary
Features
V DS
60
4.8
90
V
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance RDS(on)
R DS(on),max
I D
mΩ
A
• N-channel, logic level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
Type
IPD048N06L3 G
Package
Marking
PG-TO-252-3
048N06L
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
T C=25 °C2)
I D
Continuous drain current
90
82
A
T C=100 °C
Pulsed drain current3)
I D,pulse
E AS
T C=25 °C
360
Avalanche energy, single pulse4)
I D=90 A, R GS=25 Ω
68
mJ
V
V GS
Gate source voltage
±20
P tot
T C=25 °C
Power dissipation
115
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
1)J-STD20 and JESD22
2) Current is limited by bondwire; with anR thJC=1.3 K/W the chip is able to carry 115 A.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Rev. 2.0
page 1
2008-12-09
IPD048N06L3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
Thermal resistance,
-
-
-
-
-
-
1.3
62
40
K/W
R thJA
minimal footprint
6 cm² cooling area5)
junction - ambient
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=1 mA
DS=V GS, I D=58 µA
Drain-source breakdown voltage
Gate threshold voltage
60
-
-
V
1.2
1.7
2.2
V
DS=60 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
-
0.1
10
1
µA
T j=25 °C
V
DS=60 V, V GS=0 V,
100
T j=125 °C
I GSS
V
V
GS=20 V, V DS=0 V
GS=10 V, I D=90 A
Gate-source leakage current
-
-
1
100 nA
R DS(on)
Drain-source on-state resistance
3.7
4.8
8.2
-
mΩ
V
GS=4.5 V, I D=45 A
-
-
5.3
1.2
R G
g fs
Gate resistance
Ω
|V DS|>2|I D|R DS(on)max
I D=90 A
,
Transconductance
63
125
-
S
2
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.0
page 2
2008-12-09
IPD048N06L3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
6300
1100
47
8400 pF
V
GS=0 V, V DS=30 V,
C oss
C rss
t d(on)
t r
1500
-
f =1 MHz
11
-
-
-
-
ns
5
V
DD=30 V, V GS=10 V,
I D=80 A, R G=3.3 Ω
t d(off)
t f
Turn-off delay time
Fall time
56
12
Gate Charge Characteristics6)
Gate to source charge
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
23
8
-
-
nC
Q gd
V
V
DD=30 V, I D=90 A,
Q sw
Q g
20
37
3.7
54
-
GS=0 to 4.5 V
Gate charge total
50
-
V plateau
Q oss
Gate plateau voltage
Output charge
V
V
DD=30 V, V GS=0 V
72
nC
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
90
A
T C=25 °C
I S,pulse
360
V
GS=0 V, I F=90 A,
V SD
Diode forward voltage
-
0.9
1.2
V
T j=25 °C
t rr
Reverse recovery time
-
-
48
60
-
-
ns
V R=30 V, I F=80A,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
nC
6) See figure 16 for gate charge parameter definition
Rev. 2.0
page 3
2008-12-09
IPD048N06L3 G
1 Power dissipation
2 Drain current
P
tot=f(T C)
I D=f(T C); V GS≥10 V
120
100
80
100
80
60
40
20
0
60
40
20
0
0
50
100
150
200
0
50
100
150
200
T
C [°C]
T
C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
thJC=f(t p)
Z
parameter: D =t p/T
103
101
limited by on-state
resistance
1 µs
10 µs
102
101
100
10-1
100 µs
1 ms
100
0.5
10 ms
DC
0.2
0.1
0.05
10-1
0.02
0.01
single pulse
10-2
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
V
DS [V]
t p [s]
Rev. 2.0
page 4
2008-12-09
IPD048N06L3 G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
DS(on)=f(I D); T j=25 °C
R
parameter: V GS
parameter: V GS
360
12
3 V
3.5 V
5 V
4 V
4.5 V
10 V
6 V
320
280
240
200
160
120
80
5 V
9
6
3
0
4.5 V
6 V
4 V
10 V
3.5 V
3 V
40
0
0
1
2
3
4
5
0
40 80 120 160 200 240 280 320 360
D [A]
V
DS [V]
I
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
320
240
160
200
160
120
80
80
40
175 °C
25 °C
0
0
0
1
2
3
4
5
0
50
100
150
200
V
GS [V]
I
D [A]
Rev. 2.0
page 5
2008-12-09
IPD048N06L3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
GS(th)=f(T j); V GS=V DS
R
DS(on)=f(T j); I D=90 A; V GS=10 V
V
parameter: I D
10
9
2.5
8
2
1.5
1
580 µA
7
6
max
58 µA
5
4
3
2
1
0
typ
0.5
0
-60
-20
20
60
T j [°C]
100
140
180
-60
-20
20
60
T j [°C]
100
140
180
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
105
103
104
Ciss
175 °C, 98%
102
175 °C
25 °C
Coss
103
25 °C, 98%
101
102
Crss
101
100
0
0
20
40
60
0.5
1
1.5
2
V
DS [V]
V SD [V]
Rev. 2.0
page 6
2008-12-09
IPD048N06L3 G
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
GS=f(Q gate); I D=90 A pulsed
V
I
parameter: T j(start)
parameter: V DD
1000
12
30 V
10
8
12 V
48 V
100
10
6
25 °C
150 °C
100 °C
4
2
1
1
0
0
10
100
1000
20
40
Q
60
gate [nC]
80
100
t
AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=1 mA
65
V GS
Q g
60
55
50
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
-60
-20
20
60
100
140
180
T j [°C]
Rev. 2.0
page 7
2008-12-09
IPD048N06L3 G
PG-TO-252-3
Rev. 2.0
page 8
2008-12-09
IPD048N06L3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.0
page 9
2008-12-09
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