IPD046N08N5 [INFINEON]
OptiMOS™ 5 80V 英飞凌新一代功率MOSFET，它针对通信和服务器电源中的同步整流而设计。此外，这些器件还可以在其他工业应用中使用，例如太阳能、低压驱动器和适配器。OptiMOS™ 5 80V MOSFET 采用八个种不同封装，提供了行业内较低 R DS(on)。;
| 型号： | IPD046N08N5 |
| 厂家： | 
Infineon |
| 描述： | OptiMOS™ 5 80V 英飞凌新一代功率MOSFET，它针对通信和服务器电源中的同步整流而设计。此外，这些器件还可以在其他工业应用中使用，例如太阳能、低压驱动器和适配器。OptiMOS™ 5 80V MOSFET 采用八个种不同封装，提供了行业内较低 R DS(on)。 通信 驱动 服务器 驱动器 |
| 文件： | 总11页 (文件大小：848K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPD046N08N5
MOSFET
OptiMOSTM5ꢀPower-Transistor,ꢀ80ꢀV
D-PAK
Features
tab
•ꢀN-channel,ꢀnormalꢀlevel
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)
•ꢀ175ꢀ°Cꢀoperatingꢀtemperature
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplication
•ꢀIdealꢀforꢀhigh-frequencyꢀswitchingꢀandꢀsynchronousꢀrectification
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
1
3
Drain
Pin 2, Tab
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
Unit
VDS
80
V
Gate
Pin 1
RDS(on),max
ID
4.6
mΩ
A
Source
Pin 3
90
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPD046N08N5
PG-TO252-3
046N08N
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.ꢀ2.1,ꢀꢀ2020-03-10
OptiMOSTM5ꢀPower-Transistor,ꢀ80ꢀV
IPD046N08N5
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2020-03-10
OptiMOSTM5ꢀPower-Transistor,ꢀ80ꢀV
IPD046N08N5
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
90
82
TC=25ꢀ°C1)
TC=100ꢀ°C
Continuous drain current
ID
A
Pulsed drain current1)
Avalanche energy, single pulse2)
Gate source voltage
ID,pulse
EAS
-
-
-
-
-
360
75
A
TC=25ꢀ°C
-
mJ
V
ID=90ꢀA,ꢀRGS=25ꢀΩ
VGS
Ptot
-20
-
20
-
Power dissipation
125
W
TC=25ꢀ°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
0.7
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
RthJA
-
1.2
K/W
K/W
-
-
Thermal resistance, junction - ambient,
minimal footprint
-
-
-
-
-
-
75
Thermal resistance, junction - ambient,
6 cm2 cooling area3)
RthJA
Tsold
50
K/W
°C
-
Soldering temperature, wave and
reflow soldering allowed
260
reflow MSL1
1) See Diagram 3 for more detailed information
2) See Diagram 13 for more detailed information
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2020-03-10
OptiMOSTM5ꢀPower-Transistor,ꢀ80ꢀV
IPD046N08N5
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
80
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
VDS=VGS,ꢀID=65ꢀµA
2.2
3.0
3.8
-
-
0.1
10
1
100
VDS=80ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=80ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
1
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
4.0
5.4
4.6
6.3
VGS=10ꢀV,ꢀID=45ꢀA
VGS=6ꢀV,ꢀID=23ꢀA
RDS(on)
mΩ
Gate resistance1)
Transconductance
RG
gfs
-
1.1
82
1.7
-
Ω
-
41
S
|VDS|>2|ID|RDS(on)max,ꢀID=45ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics1)ꢀ
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Ciss
Coss
Crss
-
-
-
2930 3800 pF
VGS=0ꢀV,ꢀVDS=40ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=40ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=40ꢀV,ꢀf=1ꢀMHz
Output capacitance
488
23
630
40
pF
pF
Reverse transfer capacitance
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=45ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
11
6
-
-
-
-
ns
ns
ns
ns
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=45ꢀA,
RG,ext=1.6ꢀΩ
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=45ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
21
6
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=45ꢀA,
RG,ext=1.6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
14
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge1)
Switching charge
Gate charge total1)
Gate plateau voltage
Output charge1)
Qgs
-
-
-
-
-
-
-
nC
nC
nC
nC
V
VDD=40ꢀV,ꢀID=45ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=40ꢀV,ꢀID=45ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=40ꢀV,ꢀID=45ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=40ꢀV,ꢀID=45ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=40ꢀV,ꢀID=45ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=40ꢀV,ꢀVGS=0ꢀV
Qgd
9
14
-
Qsw
Qg
14
42
53
-
Vplateau
Qoss
4.8
51
68
nC
1) Defined by design. Not subject to production test
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2020-03-10
OptiMOSTM5ꢀPower-Transistor,ꢀ80ꢀV
IPD046N08N5
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
-
Max.
90
Diode continous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
360
1.2
82
A
TC=25ꢀ°C
Diode forward voltage
0.9
41
46
V
VGS=0ꢀV,ꢀIF=45ꢀA,ꢀTj=25ꢀ°C
VR=40ꢀV,ꢀIF=45,ꢀdiF/dt=100ꢀA/µs
VR=40ꢀV,ꢀIF=45,ꢀdiF/dt=100ꢀA/µs
Reverse recovery time1)
Reverse recovery charge1)
ns
nC
Qrr
92
1) Defined by design. Not subject to production test
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2020-03-10
OptiMOSTM5ꢀPower-Transistor,ꢀ80ꢀV
IPD046N08N5
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
150
100
125
100
75
50
25
0
80
60
40
20
0
0
50
100
150
200
0
50
100
150
200
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
1 µs
10 µs
102
101
100
100
0.5
100 µs
0.2
0.1
0.05
10-1
0.02
1 ms
0.01
10 ms
single pulse
DC
10-2
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2020-03-10
OptiMOSTM5ꢀPower-Transistor,ꢀ80ꢀV
IPD046N08N5
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
360
10
8 V
4.5 V
7 V
10 V
320
280
240
200
160
120
80
5.5 V
8
6.5 V
6 V
6.5 V
7 V
8 V
6
6 V
10 V
4
2
0
5.5 V
5 V
40
4.5 V
0
0
1
2
3
4
5
0
40
80
120
160
200
240
280
320
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
150
160
120
90
120
80
40
0
60
175 °C
25 °C
30
0
0
2
4
6
8
0
40
80
120
160
VGSꢀ[V]
IDꢀ[A]
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
gfs=f(ID);ꢀTj=25ꢀ°C
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2020-03-10
OptiMOSTM5ꢀPower-Transistor,ꢀ80ꢀV
IPD046N08N5
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
10
4
8
650 µA
3
2
1
0
65 µA
6
max
typ
4
2
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj);ꢀID=45ꢀA;ꢀVGS=10ꢀV
VGS(th)=f(Tj);ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
175 °C
25 °C max
175 °C max
Ciss
Coss
103
102
101
100
102
Crss
101
0
20
40
60
80
0.0
0.5
1.0
1.5
2.0
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2020-03-10
OptiMOSTM5ꢀPower-Transistor,ꢀ80ꢀV
IPD046N08N5
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
10
40 V
8
6
4
2
0
25 °C
16 V
64 V
100 °C
101
150 °C
100
10-1
100
101
102
103
0
10
20
30
40
50
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)
VGS=f(Qgate);ꢀID=45ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
90
85
80
75
70
-60
-20
20
60
100
140
180
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2020-03-10
OptiMOSTM5ꢀPower-Transistor,ꢀ80ꢀV
IPD046N08N5
5ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO252-3,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2020-03-10
OptiMOSTM5ꢀPower-Transistor,ꢀ80ꢀV
IPD046N08N5
RevisionꢀHistory
IPD046N08N5
Revision:ꢀ2020-03-10,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
Release of final version
Update "Marking"
2016-09-12
2020-03-10
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failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2020-03-10
相关型号：
IPD048N06L3 G
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