IPD230N06NG [INFINEON]
OptiMOS㈢ Power-Transistor; OptiMOS㈢功率三极管型号: | IPD230N06NG |
厂家: | Infineon |
描述: | OptiMOS㈢ Power-Transistor |
文件: | 总9页 (文件大小:390K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IPD230N06N G
OptiMOS® Power-Transistor
Product Summary
Features
VDS
60
23
30
V
• For dc/dc converters and sync. rectification
• N-channel enhancement - normal level
R DS(on),max
I D
mΩ
A
• 175 °C operating temperature
• Pb-free lead plating, RoHS compliant
• Avalanche rated
IPD230N06N G
Type
PG-TO252-3
230N06N
Package
Marking
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
TC=25 °C1)
I D
Continuous drain current
30
30
A
T C=100 °C
T C=25 °C2)
I D,pulse
Pulsed drain current
120
150
EAS
I D=30 A, R GS=25 Ω
Avalanche energy, single pulse
mJ
I D=30 A, VDS=48 V,
di/dt =200 A/µs,
Reverse diode dv /dt
dv /dt
6
kV/µs
T
j,max=175 °C
VGS
Gate source voltage
±20
V
Ptot
T C=25 °C
Power dissipation
100
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
1) Current is limited by bondwire;with an RthJC=1.5 K/W the chip is able to carry 43 A.
2) See figure 3
Rev. 1.0
page 1
2006-07-05
IPD230N06N G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
SMD version, device on PCB
-
-
-
1.5
75
50
K/W
R thJA
minimal footprint
-
-
6 cm2 cooling area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V(BR)DSS
VGS(th)
V
V
GS=0 V, I D=1 mA
DS=VGS, I D=50 µA
Drain-source breakdown voltage
Gate threshold voltage
60
-
-
V
2.1
3
4
V
DS=60 V, VGS=0 V,
I DSS
Zero gate voltage drain current
-
-
0.01
1
1
µA
T j=25 °C
V
DS=60 V, VGS=0 V,
100
T j=125 °C
I GSS
V
V
GS=20 V, VDS=0 V
GS=10 V, I D=30 A
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
-
-
-
1
100 nA
R DS(on)
R G
18
1.6
23
-
mΩ
Ω
|VDS|>2|I D|R DS(on)max
I D=30 A
,
g fs
Transconductance
17
34
-
S
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for
drain connection. PCB is vertical in still air.
Rev. 1.0
page 2
2006-07-05
IPD230N06N G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
860
240
64
1100 pF
320
V
GS=0 V, VDS=30 V,
C oss
C rss
t d(on)
t r
f =1 MHz
96
10
15
37
39
36
ns
25
V
DD=30 V, VGS=10 V,
I D=30 A, R G=12 Ω
t d(off)
t f
Turn-off delay time
Fall time
26
24
Gate Charge Characteristics4)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
-
5
6
3
nC
Q g(th)
Q gd
2.6
9.7
12
23
5.5
9
14.6
17
31
-
V
V
DD=30 V, I D=30 A,
GS=0 to 10 V
Q sw
Q g
Gate charge total
Vplateau
Q oss
Gate plateau voltage
Output charge
V
V
DD=30 V, VGS=10 V
11
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
30
A
V
T C=25 °C
I S,pulse
120
V
GS=0 V, I F=30 A,
VSD
Diode forward voltage
-
0.91
1.3
T j=25 °C
t rr
Reverse recovery time
-
-
39
48
48
60
ns
VR=30 V, I F=I S,
diF/dt =100 A/µs
Q rr
Reverse recovery charge
nC
4) See figure 16 for gate charge parameter definition
Rev. 1.0
page 3
2006-07-05
IPD230N06N G
1 Power dissipation
2 Drain current
Ptot=f(T C)
I D=f(T C); VGS≥10 V
120
100
80
60
40
20
0
30
25
20
15
10
5
0
0
50
100
150
200
0
50
100
150
200
T
C [°C]
T
C [°C]
3 Safe operating area
I D=f(VDS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
thJC=f(t p)
Z
parameter: D =t p/T
101
limited by on-state
resistance
1 µs
102
101
100
10-1
10 µs
100 µs
100
0.5
0.2
0.1
1 ms
DC
10 ms
10-1
0.05
0.02
0.01
single pulse
10-2
10-1
100
101
102
10-6
10-5
10-4
10-3
10-2
10-1
100
V
DS [V]
t p [s]
Rev. 1.0
page 4
2006-07-05
IPD230N06N G
5 Typ. output characteristics
I D=f(VDS); T j=25 °C
6 Typ. drain-source on resistance
DS(on)=f(I D); T j=25 °C
R
parameter: VGS
parameter: VGS
60
80
10 V
7 V
70
6.5 V
50
5 V
60
50
40
30
20
10
0
5.5 V
40
30
20
10
6 V
6 V
z
6.5 V
5.5 V
7 V
10 V
5 V
0
10
20
30
40
50
60
0
1
2
3
4
5
6
7
8
V
DS [V]
I
D [A]
7 Typ. transfer characteristics
I D=f(VGS); |VDS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
40
30
20
10
50
45
40
35
30
25
20
15
10
5
175 °C
25 °C
0
0
0
1
2
3
4
5
6
7
0
10
20
30
40
50
60
V
GS [V]
I
D [A]
Rev. 1.0
page 5
2006-07-05
IPD230N06N G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
GS(th)=f(T j); VGS=VDS
R
DS(on)=f(T j); I D=30 A; VGS=10 V
V
parameter: I D
70
60
50
40
4
3.5
3
490µA
49 µA
2.5
2
30
98 %
1.5
1
typ
20
10
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
T j [°C]
100
140
180
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(VSD
C =f(VDS); VGS=0 V; f =1 MHz
)
parameter: T j
104
103
102
101
100
175 °C 98%
Ciss
103
102
101
25 °C
175 °C
Coss
Crss
25 °C 98%
10-1
0
0
10
20
30
40
50
0.5
1
1.5
V SD [V]
2
2.5
V
DS [V]
Rev. 1.0
page 6
2006-07-05
IPD230N06N G
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
GS=f(Q gate); I D=30 A pulsed
V
I
parameter: T j(start)
parameter: VDD
102
12
30 V
48 V
12V
10
8
25 °C
100 °C
6
101
150 °C
4
2
0
0
5
10
15
Q gate [nC]
20
25
30
100
100
101
102
103
t
AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=1 mA
75
V GS
Q g
70
65
60
55
50
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.0
page 7
2006-07-05
IPD230N06N G
PG-TO252-3: Outline
packaging:
Rev. 1.0
page 8
2006-07-05
IPD230N06N G
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Rev. 1.0
page 9
2006-07-05
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