IPD65R190C7 [INFINEON]
Power Field-Effect Transistor;型号: | IPD65R190C7 |
厂家: | Infineon |
描述: | Power Field-Effect Transistor |
文件: | 总15页 (文件大小:1876K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MOSFET
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor
CoolMOS™ꢀC7
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPD65R190C7
DataꢀSheet
Rev.ꢀ2.1
Final
PowerꢀManagementꢀ&ꢀMultimarket
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPD65R190C7
DPAK
1ꢀꢀꢀꢀꢀDescription
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
tab
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.
CoolMOS™ꢀC7ꢀseriesꢀcombinesꢀtheꢀexperienceꢀofꢀtheꢀleadingꢀSJ
MOSFETꢀsupplierꢀwithꢀhighꢀclassꢀinnovation.ꢀTheꢀproductꢀportfolio
providesꢀallꢀbenefitsꢀofꢀfastꢀswitchingꢀsuperjunctionꢀMOSFETsꢀoffering
betterꢀefficiency,ꢀreducedꢀgateꢀcharge,ꢀeasyꢀimplementationꢀand
outstandingꢀreliability.
2
1
3
Features
Drain
Pin 2, tab
•ꢀIncreasedꢀMOSFETꢀdv/dtꢀruggedness
•ꢀBetterꢀefficiencyꢀdueꢀtoꢀbestꢀinꢀclassꢀFOMꢀRDS(on)*EossꢀandꢀRDS(on)*Qg
•ꢀBestꢀinꢀclassꢀRDS(on)ꢀ/package
•ꢀEasyꢀtoꢀuse/drive
Gate
Pin 1
•ꢀPb-freeꢀplating,ꢀhalogenꢀfreeꢀmoldꢀcompound
•ꢀQualifiedꢀforꢀindustrialꢀgradeꢀapplicationsꢀaccordingꢀtoꢀJEDECꢀ(J-STD20
andꢀJESD22)
Source
Pin 3
Benefits
•ꢀEnablingꢀhigherꢀsystemꢀefficiency
•ꢀEnablingꢀhigherꢀfrequencyꢀ/ꢀincreasedꢀpowerꢀdensityꢀsolutions
•ꢀSystemꢀcostꢀ/ꢀsizeꢀsavingsꢀdueꢀtoꢀreducedꢀcoolingꢀrequirements
•ꢀHigherꢀsystemꢀreliabilityꢀdueꢀtoꢀlowerꢀoperatingꢀtemperatures
Applications
PFCꢀstagesꢀandꢀhardꢀswitchingꢀPWMꢀstagesꢀforꢀe.g.ꢀComputing,ꢀServer,
Telecom,ꢀUPSꢀandꢀSolar.
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDS @ Tj,max
RDS(on),max
Qg.typ
Value
700
190
23
Unit
V
mΩ
nC
A
ID,pulse
49
Eoss@400V
Body diode di/dt
2.7
µJ
55
A/µs
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
see Appendix A
IPD65R190C7
PG-TO 252
65C7190
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2013-10-17
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPD65R190C7
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2013-10-17
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPD65R190C7
2ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
-
-
-
-
13
8
TC=25°C
TC=100°C
Continuous drain current 1)
ID
A
Pulsed drain current 2)
ID,pulse
EAS
EAR
IAS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
49
A
TC=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, single pulse
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
-
57
mJ
mJ
A
ID=5.4A; VDD=50V; see table 10
-
0.29
5.4
100
20
ID=5.4A; VDD=50V; see table 10
-
-
dv/dt
VGS
VGS
Ptot
Tstg
Tj
-
V/ns VDS=0...400V
-20
-30
-
V
static;
30
V
AC (f>1 Hz)
72
W
°C
°C
TC=25°C
Storage temperature
-55
-55
-
150
150
n.a.
13
-
-
Operating junction temperature
Mounting torque
-
Ncm -
Continuous diode forward current
Diode pulse current2)
IS
-
A
A
TC=25°C
IS,pulse
-
49
TC=25°C
VDS=0...400V,ꢀISD<=IS,ꢀTj=25°Cꢀꢀꢀꢀꢀꢀꢀ
see table 8
Reverse diode dv/dt 3)
dv/dt
-
-
1
V/ns
VDS=0...400V,ꢀISD<=IS,ꢀTj=25°Cꢀꢀꢀꢀꢀꢀꢀ
see table 8
Maximum diode commutation speed
Insulation withstand voltage
dif/dt
-
-
-
-
55
A/µs
VISO
n.a.
V
Vrms,ꢀTC=25°C,ꢀt=1min
1) Limited by Tj max
.
2) Pulse width tp limited by Tj,max
ꢀ3)ꢀIdenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀRG
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2013-10-17
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPD65R190C7
3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
1.73
62
Thermal resistance, junction - case
RthJC
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
°C/W device on PCB, minimal footprint
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
Thermal resistance, junction - ambient
for SMD version
layer, 70µm thickness) copper
area for drain connection and
cooling. PCB is vertical without air
stream cooling.
RthJA
-
-
35
-
45
°C/W
Soldering temperature, wave- & reflow
soldering allowed
Tsold
260
°C
reflow MSL1
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2013-10-17
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPD65R190C7
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
650
3
Typ.
-
Max.
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
V(GS)th
-
V
V
VGS=0V,ꢀID=1mA
3.5
4
VDS=VGS,ꢀID=0.29mA
-
-
-
10
1
-
VDS=650,ꢀVGS=0V,ꢀTj=25°C
VDS=650,ꢀVGS=0V,ꢀTj=150°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
IDSS
µA
nA
Ω
IGSS
-
-
100
VGS=20V,ꢀVDS=0V
-
-
0.168 0.190
0.404
VGS=10V,ꢀID=5.7A,ꢀTj=25°C
VGS=10V,ꢀID=5.7A,ꢀTj=150°C
RDS(on)
RG
-
-
1.1
-
Ω
f=1MHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
1150
17
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
pF
pF
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
Coss
Effective output capacitance, energy
related 1)
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
34
374
11
11
54
9
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
VGS=0V,ꢀVDS=0...400V
Effective output capacitance, time related
2)
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V
VDD=400V,ꢀVGS=13V,ꢀID=5.7A,
RG=10Ω;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
VDD=400V,ꢀVGS=13V,ꢀID=5.7A,
RG=10Ω;ꢀseeꢀtableꢀ9
VDD=400V,ꢀVGS=13V,ꢀID=5.7A,
RG=10Ω;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
td(off)
tf
VDD=400V,ꢀVGS=13ꢀV,ꢀID=5.7A,
RG=10Ω;ꢀseeꢀtableꢀ9
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
6
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=400V,ꢀID=5.7A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=5.7A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=5.7A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=5.7A,ꢀVGS=0ꢀtoꢀ10V
Qgd
7
Qg
23
Gate plateau voltage
Vplateau
5.4
ꢀ1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
ꢀ2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2013-10-17
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPD65R190C7
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
Diode forward voltage
Reverse recovery time
VSD
trr
-
0.9
-
V
VGS=0V,ꢀIF=5.7A,ꢀTj=25°C
VR=400V,ꢀIF=13A,ꢀdiF/dt=55A/µs;
see table 8
-
-
-
830
6.5
18
-
-
-
ns
VR=400V,ꢀIF=13A,ꢀdiF/dt=55A/µs;
see table 8
Reverse recovery charge
Qrr
Irrm
µC
A
VR=400V,ꢀIF=13A,ꢀdiF/dt=55A/µs;
see table 8
Peak reverse recovery current
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2013-10-17
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPD65R190C7
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
80
102
1 µs
10 µs
100 µs
1 ms
70
60
50
40
30
20
10
0
10 ms
101
100
DC
10-1
10-2
10-3
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
102
101
10 µs
1 µs
100 µs
1 ms
10 ms
101
100
DC
100
0.5
0.2
0.1
10-1
10-2
10-3
0.05
10-1
0.02
0.01
single pulse
10-2
100
101
102
103
10-5
10-4
10-3
10-2
10-1
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2013-10-17
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPD65R190C7
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
50
30
20 V
8 V
20 V
8 V
10 V
10 V
7 V
25
40
30
20
10
0
7 V
6 V
20
15
5.5 V
10
6 V
5 V
5.5 V
5 V
5
4.5 V
4.5 V
0
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
0.7
0.50
5.5 V
6 V
6.5 V
7 V
0.45
0.40
0.35
0.30
0.6
0.5
0.4
0.3
20 V
10 V
98%
0.25
0.20
0.15
0.10
typ
0
5
10
15
20
25
30
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=5.7ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2013-10-17
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPD65R190C7
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
60
12
120 V
400 V
50
40
30
20
10
0
10
8
25 °C
6
150 °C
4
2
0
0
2
4
6
8
10
12
0
5
10
15
20
25
30
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=5.7Aꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
102
60
55
50
45
40
35
30
25
20
15
10
5
101
125 °C
25 °C
100
10-1
0
0.0
0.5
1.0
1.5
25
50
75
100
125
150
VSDꢀ[V]
Tjꢀ[°C]
IF=f(VSD);ꢀparameter:ꢀTj
EAS=f(Tj);ꢀID=5.4ꢀA;ꢀVDD=50ꢀV
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2013-10-17
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPD65R190C7
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
760
105
740
720
700
680
660
640
620
600
580
104
Ciss
103
102
Coss
101
Crss
100
-60
-20
20
60
100
140
180
0
100
200
300
400
500
Tjꢀ[°C]
VDSꢀ[V]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
100
200
300
400
500
VDSꢀ[V]
Eoss=f(VDS
)
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2013-10-17
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPD65R190C7
6ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V,I
VDS
Rg1
VDS(peak)
VDS
trr
VDS
IF
tF
tS
dIF / dt
Rg 2
IF
t
10%Irrm
Q
F
Q
S
IF
dI / dt
rr
trr =tF +tS
rr
Irrm
Q =QF +Q
S
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VD
VDS
VDS
VDS
ID
Final Data Sheet
12
Rev.ꢀ2.1,ꢀꢀ2013-10-17
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPD65R190C7
7ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ252,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
13
Rev.ꢀ2.1,ꢀꢀ2013-10-17
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPD65R190C7
8ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSTMꢀC7ꢀWebpage:ꢀwww.infineon.com
• IFXꢀCoolMOSTMꢀC7ꢀapplicationꢀnote:ꢀwww.infineon.com
• IFXꢀCoolMOSTMꢀC7ꢀsimulationꢀmodel:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
14
Rev.ꢀ2.1,ꢀꢀ2013-10-17
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPD65R190C7
RevisionꢀHistory
IPD65R190C7
Revision:ꢀ2013-10-17,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
Release of final version
-
2013-10-10
2013-10-17
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Final Data Sheet
15
Rev.ꢀ2.1,ꢀꢀ2013-10-17
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