IPD90N06S4L-06 [INFINEON]
OptiMOS-T2 Power-Transistor; 的OptiMOS -T2功率三极管
| 型号： | IPD90N06S4L-06 |
| 厂家： | 
Infineon |
| 描述： | OptiMOS-T2 Power-Transistor |
| 文件： | 总9页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPD90N06S4L-06
OptiMOS®-T2 Power-Transistor
Product Summary
VDS
60
6.3
90
V
R DS(on),max
I D
mΩ
A
Features
• N-channel - Enhancement mode
PG-TO252-3-11
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
• Ultra low RDSon
Type
Package
Marking
IPD90N06S4L-06
PG-TO252-3-11 4N06L06
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
I D
T C=25°C, VGS=10V
Continuous drain current
90
A
T C=100°C, VGS=10V2)
63
Pulsed drain current1)
I D,pulse
EAS
I AS
T C=25°C
360
67
Avalanche energy, single pulse1)
Avalanche current, single pulse
Gate source voltage
I D=45A
mJ
A
-
90
VGS
Ptot
-
±16
V
T C=25°C
Power dissipation
79
W
°C
−
T j, T stg
-
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-
-
-55 ... +175
55/175/56
Rev. 1.0
page 1
2009-03-24
IPD90N06S4L-06
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics1)
R thJC
R thJA
Thermal resistance, junction - case
SMD version, device on PCB
-
-
-
-
-
-
-
1.9
62
40
K/W
minimal footprint
6 cm2 cooling area2)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V(BR)DSS
VGS(th)
V
V
GS=0V, I D= 1mA
DS=VGS, I D=40µA
Drain-source breakdown voltage
Gate threshold voltage
60
-
-
V
1.2
1.7
2.2
V
DS=60V, VGS=0V,
I DSS
Zero gate voltage drain current
-
-
0.01
5
1
µA
T j=25°C
V
DS=60V, VGS=0V,
100
T j=125°C2)
I GSS
V
V
V
GS=16V, VDS=0V
GS=4.5V, I D=45A
GS=10V, I D=90A
Gate-source leakage current
-
-
-
-
100 nA
R DS(on)
Drain-source on-state resistance
7.4
5.0
11.0
6.3
mΩ
Rev. 1.0
page 2
2009-03-24
IPD90N06S4L-06
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
4370
980
45
10
3
5680 pF
1270
V
GS=0V, VDS=25V,
f =1MHz
90
-
-
-
-
ns
V
DD=30V, VGS=10V,
I D=90A, R G=3.5Ω
t d(off)
t f
Turn-off delay time
Fall time
50
8
Gate Charge Characteristics1)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
17
6
22
12
75
-
nC
Q gd
V
V
DD=48V, I D=90A,
GS=0 to 10V
Q g
58
4.0
Vplateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current1)
Diode pulse current1)
I S
-
-
-
-
90
T C=25°C
I S,pulse
360
V
GS=0V, I F=90A,
VSD
Diode forward voltage
Reverse recovery time1)
Reverse recovery charge1)
0.6
0.95
39
1.3
V
T j=25°C
VR=30V, I F=90A,
diF/dt =100A/µs
t rr
-
-
-
-
ns
nC
Q rr
38
1) Specified by design. Not subject to production test.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2009-03-24
IPD90N06S4L-06
1 Power dissipation
2 Drain current
P
tot = f(T C); VGS ≥ 6 V
I D = f(T C); VGS ≥ 6 V
90
80
70
60
50
40
30
20
10
0
100
80
60
40
20
0
0
50
100
150
200
0
50
100
150
200
T
C [°C]
T
C [°C]
3 Safe operating area
4 Max. transient thermal impedance
thJC = f(t p)
I D = f(VDS); T C = 25 °C; D = 0
parameter: t p
Z
parameter: D =t p/T
101
1000
100
10
1 µs
0.5
100
10 µs
0.1
100 µs
0.05
10-1
1 ms
0.01
10-2
single pulse
10-3
1
10-6
10-5
10-4
10-3
10-2
10-1
100
0.1
1
10
100
t p [s]
V
DS [V]
Rev. 1.0
page 4
2009-03-24
IPD90N06S4L-06
5 Typ. output characteristics
I D = f(VDS); T j = 25 °C
parameter: VGS
6 Typ. drain-source on-state resistance
DS(on) = f(I D); T j = 25 °C
R
parameter: VGS
360
320
280
240
200
160
120
80
20
4.5 V
5 V
10 V
4 V
18
16
14
12
10
8
6 V
5 V
4.5 V
4 V
6 V
6
10 V
40
4
0
2
0
0
1
2
3
4
5
6
90
180
270
360
V
DS [V]
I
D [A]
7 Typ. transfer characteristics
I D = f(VGS); VDS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R
DS(on) = f(T j); I D = 90 A; VGS = 10 V
360
320
280
240
200
160
120
80
10
9
-55 °C
25 °C
8
7
175 °C
6
5
4
40
3
0
2
0
1
2
3
4
5
6
-60
-20
20
60
T j [°C]
100
140
180
V
GS [V]
Rev. 1.0
page 5
2009-03-24
IPD90N06S4L-06
9 Typ. gate threshold voltage
GS(th) = f(T j); VGS = VDS
10 Typ. capacitances
V
C = f(VDS); VGS = 0 V; f = 1 MHz
parameter: I D
2.5
104
103
102
Ciss
2
1.5
1
400 µA
Coss
40 µA
0.5
Crss
101
0
0
5
10
15
20
25
30
-60
-20
20
60
T j [°C]
100
140
180
V
DS [V]
11 Typical forward diode characteristicis
IF = f(VSD
12 Avalanche characteristics
A S= f(t AV
)
I
)
parameter: T j
parameter: Tj(start)
103
100
25 °C
100 °C
150 °C
102
10
1
25 °C
175 °C
101
100
0
0.1
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
1
10
100
1000
V
SD [V]
t
AV [µs]
Rev. 1.0
page 6
2009-03-24
IPD90N06S4L-06
13 Avalanche energy
14 Drain-source breakdown voltage
E
AS = f(T j); I D = 45 A
V
BR(DSS) = f(T j); I D = 1 mA
66
80
64
62
60
58
56
60
40
20
0
-55
-15
25
65
105
145
25
75
125
175
T j [°C]
T j [°C]
15 Typ. gate charge
GS = f(Q gate); I D = 90 A pulsed
16 Gate charge waveforms
V
parameter: VDD
10
9
8
7
6
5
4
3
2
1
0
V GS
Q g
12 V
48 V
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
0
10
20
30
gate [nC]
40
50
60
Q
Rev. 1.0
page 7
2009-03-24
IPD90N06S4L-06
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2009
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2009-03-24
IPD90N06S4L-06
Revision History
Version
Date
Changes
Revision 1.0
24.03.2009 Final data sheet
Rev. 1.0
page 9
2009-03-24
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