IPD90N10S4L06ATMA1 [INFINEON]
Power Field-Effect Transistor,;
| 型号： | IPD90N10S4L06ATMA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总9页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPD90N10S4L-06
OptiMOSTM-T2 Power-Transistor
Product Summary
V DS
100
6.6
90
V
R DS(on),max
I D
mW
A
Features
• N-channel - Enhancement mode
PG-TO252-3-313
• AEC qualified
TAB
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
1
3
Type
Package
Marking
IPD90N10S4L-06
PG-TO252-3-313 4N10L06
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
90
Parameter
Symbol
Conditions
Unit
Continuous drain current1)
I D
T C=25°C, V GS=10V
A
T C=100°C, V GS=10V1)
69
Pulsed drain current2)
I D,pulse
E AS
I AS
T C=25°C
360
250
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
I D=45A
mJ
A
-
70
V GS
P tot
-
+/-16
V
T C=25°C
Power dissipation
136
W
°C
T j, T stg
-
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-
-
-55 ... +175
55/175/56
Rev. 1.0
page 1
2011-11-30
IPD90N10S4L-06
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
R thJC
R thJA
R thJA
Thermal resistance, junction - case
-
-
-
-
1.1
62
K/W
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
minimal footprint
-
-
-
-
62
40
6 cm2 cooling area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0V, I D= 1mA
V GS(th) V DS=V GS, I D=90µA
Drain-source breakdown voltage
Gate threshold voltage
100
1.1
-
-
-
2.1
1
V
1.6
0.01
I DSS
V DS=100V, V GS=0V
Zero gate voltage drain current
µA
V DS=100V, V GS=0V,
T j=125°C2)
-
1
100
I GSS
V GS=20V, V DS=0V
Gate-source leakage current
-
-
-
-
100 nA
R DS(on) V GS=4.5V, I D=45A
V GS=10 V, I D=90 A
Drain-source on-state resistance
6.9
5.8
8.1
6.6
mW
Rev. 1.0
page 2
2011-11-30
IPD90N10S4L-06
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
4804
1620
147
8
6250 pF
2110
V GS=0 V, V DS=25 V,
f =1 MHz
300
-
-
-
-
ns
6
V DD=50V, V GS=10V,
I D=90A, R G=3.5W
t d(off)
t f
Turn-off delay time
Fall time
42
40
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
16
17
75
3.4
21
34
98
-
nC
Q gd
V DD=80V, I D=90A,
V GS=0 to 10V
Q g
V plateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
I S
-
-
-
-
90
T C=25°C
I S,pulse
360
V GS=0V, I F=90A,
T j=25°C
V SD
Diode forward voltage
Reverse recovery time2)
Reverse recovery charge2)
-
-
-
1.0
60
1.3
V
V R=50V, I F=50A,
di F/dt =100A/µs
t rr
-
-
ns
nC
Q rr
100
1) Current is limited by bondwire; with an R thJC = 1.1K/W the chip is able to carry 98A at 25°C.
1) Defined by design. Not subject to production test.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2011-11-30
IPD90N10S4L-06
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≥ 6 V
I D = f(T C); V GS ≥ 6 V
160
140
120
100
80
100
80
60
40
20
0
60
40
20
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D = f(V DS); T C = 25 °C; D = 0
parameter: t p
parameter: D =t p/T
101
1000
100
10
1 µs
10 µs
100
0.5
100 µs
10-1
0.1
1 ms
0.05
0.01
10-2
1
single pulse
10-3
0.1
10-6
10-5
10-4
10-3
10-2
10-1
100
0.1
1
10
100
t p [s]
V DS [V]
Rev. 1.0
page 4
2011-11-30
IPD90N10S4L-06
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
360
15
10 V
5 V
3.5 V
4 V
4.5 V
320
280
240
200
160
120
80
4.5 V
13
11
9
4 V
5 V
7
3.5 V
10 V
5
40
0
3
0
1
2
3
4
0
90
180
I D [A]
270
360
V DS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 90 A; V GS = 10 V
360
270
180
14
12
10
8
6
90
175 °C
4
25 °C
-55 °C
0
2
1
2
3
4
5
-60
-20
20
60
100
140
180
V GS [V]
T j [°C]
Rev. 1.0
page 5
2011-11-30
IPD90N10S4L-06
9 Typ. gate threshold voltage
V GS(th) = f(T j); V GS = V DS
parameter: I D
10 Typ. capacitances
C = f(V DS); V GS = 0 V; f = 1 MHz
2.5
104
103
102
Ciss
2
Coss
900 µA
1.5
90 µA
1
0.5
0
Crss
101
0
5
10
15
20
25
30
-60
-20
20
60
T j [°C]
100
140
180
V DS [V]
11 Typical forward diode characteristicis
IF = f(VSD
12 Avalanche characteristics
I A S= f(t AV
)
)
parameter: T j
parameter: Tj(start)
103
100
102
25 °C
100 °C
150 °C
10
175 °C
25 °C
101
100
0
1
0.2
0.4
0.6
0.8
1
1.2
1.4
0.1
1
10
100
1000
V SD [V]
t AV [µs]
Rev. 1.0
page 6
2011-11-30
IPD90N10S4L-06
13 Avalanche energy
14 Drain-source breakdown voltage
E AS = f(T j); I D = 45A
V BR(DSS) = f(T j); I D = 1 mA
110
108
106
104
102
100
98
300
250
200
150
100
50
96
94
0
-55
-15
25
65
105
145
25
75
125
175
T j [°C]
T j [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 90 A pulsed
parameter: V DD
10
V GS
Q g
8
80 V
20 V
6
V gs(th)
4
2
Q g(th)
Q sw
Q gd
Q gate
Q gs
0
0
20
40
Q gate [nC]
60
80
Rev. 1.0
page 7
2011-11-30
IPD90N10S4L-06
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2011
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2011-11-30
IPD90N10S4L-06
Revision History
Version
Date
Changes
Final Data Sheet
Revision 1.0
29.11.2011
Rev. 1.0
page 9
2011-11-30
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