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IPDD60R102G7 [INFINEON]

英飞凌现创新推出双 DPAK (DDPAK)，这是首款顶部冷却 SMD 封装，主要面向大功率 SMPS 应用，如 PC 电源、太阳能、服务器和电信设备等应用。现有高压技术的优点 600V CoolMOS™ G7 超级结 (SJ) MOSFET结合了顶部冷却的创新概念，为 PFC 等高电流硬开关拓扑提供了系统解决方案，为 LLC 拓扑提供了高端高效解决方案。;
IPDD60R102G7
型号： IPDD60R102G7
厂家： Infineon    Infineon
描述：

英飞凌现创新推出双 DPAK (DDPAK)，这是首款顶部冷却 SMD 封装，主要面向大功率 SMPS 应用，如 PC 电源、太阳能、服务器和电信设备等应用。现有高压技术的优点 600V CoolMOS™ G7 超级结 (SJ) MOSFET结合了顶部冷却的创新概念，为 PFC 等高电流硬开关拓扑提供了系统解决方案，为 LLC 拓扑提供了高端高效解决方案。

开关 PC 服务器 电信 高压 功率因数校正
文件： 总14页 (文件大小：972K)
中文：  中文翻译
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IPDD60R102G7  
MOSFET  
PG-HDSOP-10-1  
600VꢀCoolMOS™ꢀG7ꢀSJꢀPowerꢀDevice  
TheꢀC7ꢀGOLDꢀseriesꢀ(G7)ꢀforꢀtheꢀfirstꢀtimeꢀbringsꢀtogetherꢀtheꢀbenefitsꢀof  
theꢀC7ꢀGOLDꢀCoolMOS™ꢀtechnology,ꢀ4ꢀpinꢀKelvinꢀSourceꢀcapabilityꢀand  
theꢀimprovedꢀthermalꢀpropertiesꢀofꢀtheꢀDDPAKꢀpackageꢀtoꢀenableꢀa  
possibleꢀꢀSMDꢀsolutionꢀforꢀhighꢀcurrentꢀtopologiesꢀsuchꢀasꢀPFCꢀupꢀtoꢀ3kW.  
10  
6
tab  
Pin 1  
5
Features  
•ꢀC7ꢀGoldꢀgivesꢀbestꢀinꢀclassꢀFOMꢀRDS(on)*EossꢀandꢀRDS(on)*Qg.  
•ꢀSuitableꢀforꢀhardꢀandꢀsoftꢀswitchingꢀ(PFCꢀandꢀhighꢀperformanceꢀLLC)  
•ꢀC7ꢀGoldꢀtechnologyꢀenablesꢀbestꢀinꢀclassꢀRDS(on)ꢀinꢀsmallestꢀfootprint.  
•ꢀDDPAKꢀpackageꢀhasꢀinbuiltꢀ4thꢀpinꢀKelvinꢀSourceꢀconfigurationꢀandꢀlow  
parasiticꢀsourceꢀinductanceꢀ(~3nH).  
•ꢀDDPAKꢀpackageꢀisꢀMSL1ꢀcompliant,ꢀtotalꢀPb-freeꢀandꢀhasꢀeasyꢀvisual  
inspectionꢀleads.  
Drain  
Pin 6-10, Tab  
•ꢀDDPAKꢀSMDꢀpackageꢀcombinedꢀwithꢀleadꢀfreeꢀdieꢀattachꢀprocess  
enablesꢀimprovedꢀthermalꢀperformanceꢀ(Rth).  
*1  
Gate  
Pin 1  
Driver  
Source  
Pin 2  
Power  
Source  
Pin 3,4,5  
Benefits  
•ꢀC7ꢀGoldꢀFOMꢀRDS(on)*Qgꢀꢀisꢀ15%ꢀbetterꢀthanꢀpreviousꢀC7ꢀ600Vꢀenabling  
fasterꢀswitchingꢀleadingꢀtoꢀhigherꢀefficiency.  
*1: Internal body diode  
•ꢀPossibilityꢀtoꢀincreasseꢀeconomiesꢀofꢀscalesꢀbyꢀusageꢀinꢀPFCꢀandꢀPWM  
topologiesꢀinꢀtheꢀapplication.  
•ꢀC7ꢀGoldꢀcanꢀreachꢀ50mΩꢀinꢀDDPAKꢀ115mm2ꢀfootprint,ꢀwhereasꢀprevious  
BICꢀC7ꢀ600Vꢀwasꢀ40mΩꢀinꢀ150mm2ꢀD2PAKꢀfootprint.  
•ꢀReducingꢀparasiticꢀsourceꢀinductanceꢀbyꢀKelvinꢀSourceꢀimproves  
efficiencyꢀbyꢀfasterꢀswitchingꢀandꢀeaseꢀofꢀuseꢀdueꢀtoꢀlessꢀringing.  
•ꢀDDPAKꢀpackageꢀisꢀeasyꢀtoꢀuseꢀandꢀhasꢀtheꢀhighestꢀqualityꢀstandards.  
•ꢀImprovedꢀthermalsꢀenableꢀSMDꢀDDPAKꢀpackageꢀtoꢀbeꢀusedꢀinꢀhigher  
currentꢀdesignsꢀthanꢀhasꢀbeenꢀpreviouslyꢀpossible.  
Potentialꢀapplications  
PFCꢀstagesꢀandꢀPWMꢀstagesꢀ(TTF,ꢀLLC)ꢀforꢀhighꢀpower/performance  
SMPSꢀe.g.ꢀComputing,ꢀServer,ꢀTelecom,ꢀUPSꢀandꢀSolar.  
Productꢀvalidation  
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications  
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate  
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDS@Tj,max  
RDS(on),max  
Qg,typ  
Value  
650  
102  
34  
Unit  
V
mΩ  
nC  
A
ID,pulse  
66  
ID,continuous @ Tj<150°C 32  
A
Eoss@400V  
4
µJ  
Body diode di/dt  
740  
A/µs  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IPDD60R102G7  
PG-HDSOP-10  
60R102G7  
see Appendix A  
Final Data Sheet  
1
Rev.ꢀ2.1,ꢀꢀ2020-10-27  
600VꢀCoolMOS™ꢀG7ꢀSJꢀPowerꢀDevice  
IPDD60R102G7  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Final Data Sheet  
2
Rev.ꢀ2.1,ꢀꢀ2020-10-27  
600VꢀCoolMOS™ꢀG7ꢀSJꢀPowerꢀDevice  
IPDD60R102G7  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
23  
15  
TC=25°C  
A
Continuous drain current1)  
ID  
TC=100°C  
Pulsed drain current2)  
ID,pulse  
EAS  
EAR  
IAS  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
66  
A
TC=25°C  
Avalanche energy, single pulse  
Avalanche energy, repetitive  
Avalanche current, single pulse  
MOSFET dv/dt ruggedness  
Gate source voltage (static)  
Gate source voltage (dynamic)  
Power dissipation  
-
78  
mJ  
mJ  
A
ID=4.4A; VDD=50V; see table 10  
-
0.39  
4.4  
120  
20  
ID=4.4A; VDD=50V; see table 10  
-
-
dv/dt  
VGS  
VGS  
Ptot  
Tstg  
Tj  
-
V/ns VDS=0...400V  
-20  
-30  
-
V
static;  
30  
V
AC (f>1 Hz)  
139  
150  
150  
n.a.  
23  
W
°C  
°C  
Ncm  
A
TC=25°C  
Storage temperature  
-55  
-55  
-
-
Operating junction temperature  
Mounting torque  
-
-
-
Continuous diode forward current  
Diode pulse current2)  
IS  
-
TC=25°C  
TC=25°C  
IS,pulse  
-
66  
A
VDS=0...400V,ꢀISD<=6.7A,ꢀTj=25°Cꢀꢀꢀꢀ  
Reverse diode dv/dt3)  
dv/dt  
-
-
25  
V/ns  
see table 8  
VDS=0...400V,ꢀISD<=6.7A,ꢀTj=25°Cꢀꢀꢀꢀ  
Maximum diode commutation speed  
Insulation withstand voltage  
dif/dt  
-
-
-
-
740  
n.a.  
A/µs  
see table 8  
VISO  
V
Vrms,ꢀTC=25°C,ꢀt=1min  
1) Limited by Tj,max  
2) Pulse width tp limited by Tj,max  
3) Identical low side and high side switch  
Final Data Sheet  
3
Rev.ꢀ2.1,ꢀꢀ2020-10-27  
600VꢀCoolMOS™ꢀG7ꢀSJꢀPowerꢀDevice  
IPDD60R102G7  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
0.9  
Thermal resistance, junction - case  
RthJC  
-
-
-
-
°C/W -  
Thermal resistance, junction - ambient RthJA  
62  
°C/W device on PCB, minimal footprint  
Device on 40mm*40mm*1.5mm  
epoxy PCB FR4 with 6cm² (one  
Thermal resistance, junction - ambient  
for SMD version  
layer, 70µm thickness) copper area  
for drain connection and cooling.  
PCB is vertical without air stream  
cooling.  
RthJA  
-
-
35  
-
45  
°C/W  
Reflow soldering temperature  
Tsold  
260  
°C  
reflow MSL1  
Final Data Sheet  
4
Rev.ꢀ2.1,ꢀꢀ2020-10-27  
600VꢀCoolMOS™ꢀG7ꢀSJꢀPowerꢀDevice  
IPDD60R102G7  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
600  
3
Max.  
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
V(GS)th  
-
V
V
VGS=0V,ꢀID=1mA  
3.5  
4
VDS=VGS,ꢀID=0.39mA  
-
-
-
10  
1
-
VDS=600V,ꢀVGS=0V,ꢀTj=25°C  
VDS=600V,ꢀVGS=0V,ꢀTj=150°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
Gate resistance  
IDSS  
µA  
nA  
Ω
IGSS  
-
-
100  
VGS=20V,ꢀVDS=0V  
-
-
0.088 0.102  
0.220  
VGS=10V,ꢀID=7.8A,ꢀTj=25°C  
VGS=10V,ꢀID=7.8A,ꢀTj=150°C  
RDS(on)  
RG  
-
-
0.8  
-
Ω
f=1MHz,ꢀopenꢀdrain  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
1320  
27  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Output capacitance  
Ciss  
-
-
-
-
pF  
pF  
VGS=0V,ꢀVDS=400V,ꢀf=250kHz  
VGS=0V,ꢀVDS=400V,ꢀf=250kHz  
Coss  
Effective output capacitance, energy  
related1)  
Co(er)  
Co(tr)  
td(on)  
tr  
-
-
-
-
-
-
50  
516  
18  
5
-
-
-
-
-
-
pF  
pF  
ns  
ns  
ns  
ns  
VGS=0V,ꢀVDS=0...400V  
Effective output capacitance, time  
related2)  
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V  
VDD=400V,ꢀVGS=13V,ꢀID=7.8A,  
RG=5.3Ω;ꢀseeꢀtableꢀ9  
Turn-on delay time  
Rise time  
VDD=400V,ꢀVGS=13V,ꢀID=7.8A,  
RG=5.3Ω;ꢀseeꢀtableꢀ9  
VDD=400V,ꢀVGS=13V,ꢀID=7.8A,  
RG=5.3Ω;ꢀseeꢀtableꢀ9  
Turn-off delay time  
Fall time  
td(off)  
tf  
60  
4
VDD=400V,ꢀVGS=13V,ꢀID=7.8A,  
RG=5.3Ω;ꢀseeꢀtableꢀ9  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics  
Values  
Typ.  
7
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate to drain charge  
Gate charge total  
Qgs  
-
-
-
-
-
-
-
-
nC  
nC  
nC  
V
VDD=400V,ꢀID=7.8A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=7.8A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=7.8A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=7.8A,ꢀVGS=0ꢀtoꢀ10V  
Qgd  
12  
Qg  
34  
Gate plateau voltage  
Vplateau  
5.0  
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
Final Data Sheet  
5
Rev.ꢀ2.1,ꢀꢀ2020-10-27  
600VꢀCoolMOS™ꢀG7ꢀSJꢀPowerꢀDevice  
IPDD60R102G7  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics  
Values  
Typ.  
0.8  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Diode forward voltage  
Reverse recovery time  
VSD  
trr  
-
-
V
VGS=0V,ꢀIF=7.8A,ꢀTj=25°C  
VR=400V,ꢀIF=7.8A,ꢀdiF/dt=100A/µs;  
see table 8  
-
-
-
305  
3.1  
22  
-
-
-
ns  
VR=400V,ꢀIF=7.8A,ꢀdiF/dt=100A/µs;  
see table 8  
Reverse recovery charge  
Qrr  
Irrm  
µC  
A
VR=400V,ꢀIF=7.8A,ꢀdiF/dt=100A/µs;  
see table 8  
Peak reverse recovery current  
Final Data Sheet  
6
Rev.ꢀ2.1,ꢀꢀ2020-10-27  
600VꢀCoolMOS™ꢀG7ꢀSJꢀPowerꢀDevice  
IPDD60R102G7  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea  
150  
102  
1 µs  
1 ms  
10 µs  
100 µs  
10 ms  
120  
90  
60  
30  
0
101  
100  
DC  
10-1  
10-2  
10-3  
0
25  
50  
75  
100  
125  
150  
100  
101  
102  
103  
TCꢀ[°C]  
VDSꢀ[V]  
Ptot=f(TC)  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
102  
100  
1 ms  
1 µs  
10 µs  
100 µs  
10 ms  
0.5  
101  
100  
DC  
0.2  
0.1  
10-1  
0.05  
0.02  
0.01  
10-1  
10-2  
10-3  
single pulse  
10-2  
100  
101  
102  
103  
10-5  
10-4  
10-3  
10-2  
10-1  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
7
Rev.ꢀ2.1,ꢀꢀ2020-10-27  
600VꢀCoolMOS™ꢀG7ꢀSJꢀPowerꢀDevice  
IPDD60R102G7  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics  
120  
60  
20 V  
20 V  
10 V  
10 V  
8 V  
6 V  
7 V  
8 V  
7 V  
100  
80  
60  
40  
20  
0
50  
40  
30  
20  
10  
0
5.5 V  
6 V  
5 V  
5.5 V  
4.5 V  
5 V  
4.5 V  
0
4
8
12  
16  
20  
0
4
8
12  
16  
20  
VDSꢀ[V]  
VDSꢀ[V]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance  
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance  
0.32  
0.28  
5.5 V  
6 V  
6.5 V  
0.30  
0.28  
0.26  
0.24  
0.22  
0.20  
0.18  
0.16  
7 V  
10 V  
0.24  
0.20  
20 V  
0.16  
98%  
typ  
0.12  
0.08  
0.04  
0
10  
20  
30  
40  
50  
60  
70  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
IDꢀ[A]  
Tjꢀ[°C]  
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(Tj);ꢀID=7.8ꢀA;ꢀVGS=10ꢀV  
Final Data Sheet  
8
Rev.ꢀ2.1,ꢀꢀ2020-10-27  
600VꢀCoolMOS™ꢀG7ꢀSJꢀPowerꢀDevice  
IPDD60R102G7  
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge  
120  
12  
25 °C  
120 V  
100  
10  
8
400 V  
80  
60  
6
150 °C  
40  
4
20  
0
2
0
0
2
4
6
8
10  
12  
0
10  
20  
30  
40  
VGSꢀ[V]  
Qgateꢀ[nC]  
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj  
VGS=f(Qgate);ꢀID=7.8ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
Diagramꢀ12:ꢀAvalancheꢀenergy  
102  
80  
70  
60  
50  
40  
30  
20  
10  
0
101  
125 °C  
25 °C  
100  
10-1  
0.30  
0.50  
0.70  
0.90  
1.10  
1.30  
25  
50  
75  
100  
125  
150  
VSDꢀ[V]  
Tjꢀ[°C]  
IF=f(VSD);ꢀparameter:ꢀTj  
EAS=f(Tj);ꢀID=4.4ꢀA;ꢀVDD=50ꢀV  
Final Data Sheet  
9
Rev.ꢀ2.1,ꢀꢀ2020-10-27  
600VꢀCoolMOS™ꢀG7ꢀSJꢀPowerꢀDevice  
IPDD60R102G7  
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagramꢀ14:ꢀTyp.ꢀcapacitances  
700  
105  
680  
660  
640  
620  
600  
580  
560  
540  
104  
Ciss  
103  
102  
Coss  
101  
Crss  
100  
10-1  
-60  
-20  
20  
60  
100  
140  
180  
0
100  
200  
300  
400  
500  
Tjꢀ[°C]  
VDSꢀ[V]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz  
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy  
6
5
4
3
2
1
0
0
100  
200  
300  
400  
500  
VDSꢀ[V]  
Eoss=f(VDS  
)
Final Data Sheet  
10  
Rev.ꢀ2.1,ꢀꢀ2020-10-27  
600VꢀCoolMOS™ꢀG7ꢀSJꢀPowerꢀDevice  
IPDD60R102G7  
5ꢀꢀꢀꢀꢀTestꢀCircuits  
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics  
Test circuit for diode characteristics  
Diode recovery waveform  
Rg1  
VDS  
Rg 2  
IF  
Rg1 = Rg 2  
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes  
Switching times test circuit for inductive load  
Switching times waveform  
VDS  
90%  
10%  
VDS  
VGS  
VGS  
td(off)  
tf  
td(on)  
ton  
tr  
toff  
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload  
Unclamped inductive load test circuit  
Unclamped inductive waveform  
V(BR)DS  
ID  
VDS  
VDS  
VDS  
ID  
Final Data Sheet  
11  
Rev.ꢀ2.1,ꢀꢀ2020-10-27  
600VꢀCoolMOS™ꢀG7ꢀSJꢀPowerꢀDevice  
IPDD60R102G7  
6ꢀꢀꢀꢀꢀPackageꢀOutlines  
PG-HDSOP-10-1  
DOCUMENT NO.  
Z8B00184263  
REVISION  
MILLIMETERS  
DIMENSIONS  
01  
MIN.  
2.20  
0.00  
0.89  
0.57  
0.57  
0.46  
15.20  
10.50  
6.40  
5.20  
MAX.  
2.35  
0.15  
1.10  
0.63  
0.93  
0.58  
15.60  
10.70  
6.60  
5.50  
A
A1  
A2  
b
SCALE 5:1  
0
1
2
3
4
5mm  
b2  
c
EUROPEAN PROJECTION  
D
D1  
E
E1  
e
1.14  
10  
N
ISSUE DATE  
06.02.2017  
H
20.81  
1.20  
21.11  
1.40  
L
Figure 1 Outline PG-HDSOP-10, dimensions in mm/inches  
Final Data Sheet  
12  
Rev.ꢀ2.1,ꢀꢀ2020-10-27  
600V CoolMOS™ G7 SJ Power Device  
IPDD60R102G7  
7
Appendix A  
Table 11 Related Links  
• IFX CoolMOSTM G7 Webpage: www.infineon.com  
• IFX CoolMOSTM G7 application note: www.infineon.com  
• IFX CoolMOSTM G7 simulation model: www.infineon.com  
• IFX Design tools: www.infineon.com  
Final Data Sheet  
13  
Rev. 2.1, 2020-10-27  
600V CoolMOS™ G7 SJ Power Device  
IPDD60R102G7  
Revision History  
IPDD60R102G7  
Revision: 2020-10-27, Rev. 2.1  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
2.0  
2.1  
Release of final version  
2018-01-05  
2020-10-27  
Content update diagram 2,3,4,7,8 and format update  
Trademarks  
All referenced product or service names and trademarks are the property of their respective owners.  
We Listen to Your Comments  
Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously  
improve the quality of this document. Please send your proposal (including a reference to this document) to:  
erratum@infineon.com  
Published by  
Infineon Technologies AG  
81726 München, Germany  
© 2020 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics  
(“Beschaffenheitsgarantie”) .  
With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the  
product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation  
warranties of non-infringement of intellectual property rights of any third party.  
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this  
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product of Infineon Technologies in customer’s applications.  
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s  
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Information  
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon  
Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements, components may contain dangerous substances. For information on the types in question,  
please contact the nearest Infineon Technologies Office.  
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or  
automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a  
failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and  
aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are  
intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is  
reasonable to assume that the health of the user or other persons may be endangered.  
Final Data Sheet  
14  
Rev. 2.1, 2020-10-27  

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