IPG16N10S4L61AATMA1 [INFINEON]
MOSFET 2N-CH 8TDSON;
| 型号： | IPG16N10S4L61AATMA1 |
| 厂家： | 
Infineon |
| 描述： | MOSFET 2N-CH 8TDSON |
| 文件： | 总9页 (文件大小：272K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPG16N10S4L-61A
OptiMOS™-T2 Power-Transistor
Product Summary
VDS
100
61
V
3)
RDS(on),max
mW
A
ID
16
Features
• Dual N-channel Logic Level - Enhancement mode
PG-TDSON-8-10
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
• Feasible for automatic optical inspection (AOI)
Type
Package
Marking
IPG16N10S4L-61A
PG-TDSON-8-10
4N10L61
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
Continuous drain current
one channel active
I D
T C=25 °C, V GS=10 V
16
11
64
A
T C=100 °C,
V GS=10 V1)
Pulsed drain current1)
one channel active
I D,pulse
-
Avalanche energy, single pulse1, 3)
Avalanche current, single pulse3)
Gate source voltage
E AS
I AS
I D=8A
33
10
mJ
A
-
V GS
-
±16
V
Power dissipation
one channel active
P tot
T C=25 °C
29
W
T j, T stg
Operating and storage temperature
-
-55 ... +175
°C
Rev. 1.0
page 1
2014-06-30
IPG16N10S4L-61A
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics1, 3)
R thJC
R thJA
Thermal resistance, junction - case
SMD version, device on PCB
-
-
-
-
-
5.2
K/W
minimal footprint
100
60
-
-
6 cm2 cooling area2)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0V, I D=1mA
V GS(th) V DS=V GS, I D=9µA
Drain-source breakdown voltage
Gate threshold voltage
100
1.1
-
-
V
1.6
2.1
V DS=100V, V GS=0V,
T j=25°C
Zero gate voltage drain current3)
I DSS
-
-
0.01
1
1
µA
V DS=100V, V GS=0V,
T j=125°C2)
100
Gate-source leakage current3)
I GSS
V GS=16V, V DS=0V
-
-
-
-
100 nA
Drain-source on-state resistance3)
R DS(on) V GS=4.5V, I D=8A
V GS=10 V, I D=16 A
60
47
78
61
mW
Rev. 1.0
page 2
2014-06-30
IPG16N10S4L-61A
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics1)
Input capacitance3)
Output capacitance3)
Reverse transfer capacitance3)
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
650
165
12
2
845 pF
215
V GS=0V, V DS=25V,
f =1MHz
36
-
-
-
-
ns
1
V DD=50V, V GS=10V,
I D=16A, R G=3.5W
t d(off)
t f
Turn-off delay time
Fall time
5
4
Gate Charge Characteristics1, 3)
Gate to source charge
Gate to drain charge
Q gs
-
-
-
-
2.3
1.3
8.5
3.7
3.0
3.6
11
-
nC
Q gd
V DD=80V, I D=16A,
V GS=0 to 10V
Q g
Gate charge total
V plateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current1)
one channel active
I S
-
-
-
-
-
-
16
64
1.3
-
T C=25°C
Diode pulse current1)
one channel active
I S,pulse
V SD
t rr
-
V GS=0V, I F=16A,
T j=25°C
Diode forward voltage
1.0
50
80
V
V R=50V, I F=I S,
di F/dt =100A/µs
Reverse recovery time1)
Reverse recovery charge1, 3)
ns
nC
Q rr
-
1) Specified by design. Not subject to production test.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) Per channel
Rev. 1.0
page 3
2014-06-30
IPG16N10S4L-61A
1 Power dissipation
2 Drain current
P tot = f(T C); V GS =10 V; one channel active
I D = f(T C); V GS = 10 V; one channel active
35
30
25
20
15
10
5
20
15
10
5
0
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D=f(V DS); T C=25°C; D =0; one channel active
parameter: t p
parameter: D =t p/T
101
100
1 µs
0.5
10 µs
100
10
0.1
0.05
0.01
100 µs
10-1
1
single pulse
1 ms
10-2
0.1
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 1.0
page 4
2014-06-30
IPG16N10S4L-61A
5 Typ. output characteristics5)
I D = f(V DS); T j = 25 °C
parameter: V GS
6 Typ. drain-source on-state resistance5)
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
64
56
48
40
32
24
16
8
160
10 V
3.5 V
4 V
4.5 V
5 V
140
120
100
80
5 V
4.5 V
4 V
3.5 V
60
10 V
0
40
0
1
2
3
4
5
0
16
32
48
64
VDS [V]
ID [A]
7 Typ. transfer characteristics5)
I D = f(V GS); V DS = 6V
parameter: T j
8 Typ. drain-source on-state resistance5)
R DS(on) = f(T j); I D = 16 A; V GS = 10 V
64
56
48
40
32
24
16
8
120
100
80
-55 °C
25 °C
175 °C
60
40
0
20
1
2
3
4
5
6
-60
-20
20
60
100
140
180
VGS [V]
Tj [°C]
Rev. 1.0
page 5
2014-06-30
IPG16N10S4L-61A
10 Typ. Capacitances5)
9 Typ. gate threshold voltage
V GS(th) = f(T j); V GS = V DS
parameter: I D
C = f(V DS); V GS = 0 V; f = 1 MHz
103
2.5
Ciss
2
Coss
102
101
100
90µA
1.5
9µA
1
0.5
0
Crss
0
5
10
15
20
25
30
-60
-20
20
60
100
140
180
VDS [V]
Tj [°C]
11 Typical forward diode characteristicis5)
12 Avalanche characteristics5)
I A S= f(t AV
I F = f(VSD)
)
parameter: T j
parameter: Tj(start)
102
100
10
25 °C
100 °C
101
150 °C
1
25 °C
175 °C
100
0.1
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
10
100
1000
VSD [V]
tAV [µs]
Rev. 1.0
page 6
2014-06-30
IPG16N10S4L-61A
13 Avalanche energy5)
14 Drain-source breakdown voltage
E AS = f(T j), I D = 8A
V BR(DSS) = f(T j); I D = 1 mA
110
108
106
104
102
100
98
40
30
20
10
0
96
94
-60
-20
20
60
100
140
180
25
50
75
100
125
150
175
Tj [°C]
Tj [°C]
15 Typ. gate charge5)
16 Gate charge waveforms
V GS = f(Q gate); I D = 16 A pulsed
parameter: V DD
12
10
8
V GS
Q g
20 V
80 V
6
V gs(th)
4
2
Q g(th)
Q sw
Q gd
Q gate
Q gs
0
0
2
4
6
8
10
Qgate [nC]
Rev. 1.0
page 7
2014-06-30
IPG16N10S4L-61A
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2014
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2014-06-30
IPG16N10S4L-61A
Revision History
Version
Date
Changes
30.06.2014 Data Sheet Revision 1.0
Revision 1.0
Rev. 1.0
page 9
2014-06-30
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