IPI045N10N3G [INFINEON]
OptiMOS?3 Power-Transistor; 的OptiMOS ™ 3功率三极管
| 型号： | IPI045N10N3G |
| 厂家： | 
Infineon |
| 描述： | OptiMOS?3 Power-Transistor |
| 文件： | 总11页 (文件大小：345K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
OptiMOS™3 Power-Transistor
Product Summary
Features
V DS
100
4.2
V
• N-channel, normal level
R DS(on),max (TO 263)
I D
mΩ
A
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
100
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPB042N10N3 G
IPI045N10N3 G
IPP045N10N3 G
Package
Marking
PG-TO263-3
042N10N
PG-TO262-3
045N10N
PG-TO220-3
045N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
T C=25 °C2)
I D
Continuous drain current
100
100
A
T C=100 °C
Pulsed drain current2)
I D,pulse
E AS
T C=25 °C
400
I D=100 A, R GS=25 Ω
Avalanche energy, single pulse
Gate source voltage
340
mJ
V
V GS
±20
P tot
T C=25 °C
Power dissipation
214
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
1)J-STD20 and JESD22
2) See figure 3
Rev. 2.5
page 1
2010-01-13
IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
Thermal resistance,
-
-
-
-
-
-
0.7
62
50
K/W
R thJA
minimal footprint
6 cm2 cooling area3)
junction - ambient
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=1 mA
Drain-source breakdown voltage
Gate threshold voltage
100
2
-
-
V
V GS(th)
V DS=V GS, I D=150 µA
2.7
3.5
V DS=100 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
0.1
1
µA
V
DS=100 V, V GS=0 V,
-
-
-
10
1
100
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
100 nA
V GS=10 V, I D=100 A,
R DS(on)
Drain-source on-state resistance
3.9
4.5
4.2
7.7
mΩ
TO 220, TO 262
V GS=10 V, I D=50 A,
-
-
3.6
4.7
TO263
V
GS=6 V, I D=50 A, TO
220, TO 262
V
GS=6 V, I D=50 A,
-
-
4.4
1.4
7.4
TO263
R G
g fs
Gate resistance
-
-
Ω
|V DS|>2|I D|R DS(on)max
I D=100 A
,
Transconductance
73
145
S
2
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.5
page 2
2010-01-13
IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
6320
1210
41
8410 pF
V GS=0 V, V DS=50 V,
f =1 MHz
C oss
C rss
t d(on)
t r
1610
-
27
-
-
-
-
ns
59
V
DD=50 V, V GS=10 V,
I D=50 A, R G=1.6 Ω
t d(off)
t f
Turn-off delay time
Fall time
48
14
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
30
16
39
nC
Q gd
-
V DD=50 V, I D=100 A,
GS=0 to 10 V
Q sw
Q g
27
-
117
-
V
Gate charge total
88
V plateau
Q oss
Gate plateau voltage
Output charge
4.7
122
V
V DD=50 V, V GS=0 V
162 nC
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
100
400
A
T C=25 °C
I S,pulse
V GS=0 V, I F=100 A,
T j=25 °C
V SD
Diode forward voltage
-
1.0
1.2
V
t rr
Reverse recovery time
-
-
68
-
-
ns
V R=50 V, I F=I S,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
135
nC
4) See figure 16 for gate charge parameter definition
Rev. 2.5
page 3
2010-01-13
IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
1 Power dissipation
2 Drain current
P
tot=f(T C)
I D=f(T C); V GS≥10 V
250
120
100
80
60
40
20
0
200
150
100
50
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
103
100
limited by on-state
resistance
1 µs
10 µs
100 µs
0.5
102
101
100
10-1
1 ms
0.2
10-1
0.1
10 ms
0.05
0.02
DC
0.01
single pulse
10-2
10-1
100
101
102
103
t p [s]
V DS [V]
Rev. 2.5
page 4
2010-01-13
IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
400
10 V
7.5 V
9
6 V
4.5 V
320
240
160
80
5 V
6
3
0
5.5 V
6 V
7.5 V
10 V
5 V
4.5 V
0
0
1
2
3
4
5
0
50
100
150
V DS [V]
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
200
150
100
200
160
120
80
25 °C
50
40
175 °C
0
0
0
2
4
6
8
0
50
100
150
V GS [V]
ID [A]
Rev. 2.5
page 5
2010-01-13
IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)=f(T j); I D=100 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
10
4
3.5
3
8
1500 µA
2.5
2
6
150 µA
98 %
typ
4
1.5
1
2
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
T j [°C]
100
140
180
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
104
103
Ciss
Coss
175 °C, 98%
25 °C
175 °C
103
102
101
102
25 °C, 98%
101
Crss
100
0
0
20
40
60
80
0.5
1
1.5
2
V DS [V]
V SD [V]
Rev. 2.5
page 6
2010-01-13
IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
GS=f(Q gate); I D=100 A pulsed
V
I
parameter: T j(start)
parameter: V DD
1000
10
8
6
4
2
80 V
100
25 °C
50 V
20 V
100 °C
150 °C
10
1
1
0
0
10
100
1000
20
40
60
80
100
t AV [µs]
Q gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=1 mA
110
V GS
Q g
105
100
95
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
90
-60
-20
20
60
100
140
180
T j [°C]
Rev. 2.5
page 7
2010-01-13
IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
PG-TO220-3: Outline
Rev. 2.5
page 8
2010-01-13
IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
PG-TO262-3
Rev. 2.5
page 9
2010-01-13
IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
PG-TO-263 (D²-Pak)
Rev. 2.5
page 10
2010-01-13
IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.5
page 11
2010-01-13
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