IPP139N08N3G [INFINEON]
OptiMOS3 Power-Transistor; OptiMOS3功率三极管
| 型号： | IPP139N08N3G |
| 厂家： | 
Infineon |
| 描述： | OptiMOS3 Power-Transistor |
| 文件： | 总11页 (文件大小：1021K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPP139N08N3 G IPI139N08N3 G
IPB136N08N3 G
"%&$!"#™3 Power-Transistor
Product Summary
Features
V 9H
0(
)+&.
,-
J
Q #451< 6? B 8978 6B5AE5>3 I CG9D3 89>7
Q ( @D9=9J54 D53 8>? <? 7I 6? B ꢀ ꢁ ꢂꢀ ꢁ 3 ? >F5BD5BC
Q ꢃ H3 5<<5>D 71D5 3 81B75 H R 9H"[Z# @B? 4E3 D ꢄ ( & ꢅ
R ꢀ ,ꢄ? >ꢅꢇ=1H ꢄ,& ꢀ ꢅ
I 9
Y"
6
Q ' ꢆ3 81>>5<ꢇ >? B=1< <5F5<
Q ꢈ ꢉ ꢉ ꢊ 1F1<1>3 85 D5CD54
Q )2 ꢆ6B55 @<1D9>7ꢋ + ? " , 3 ? =@<91>D
Q * E1<96954 13 3 ? B49>7 D? $ ꢃ ꢀ ꢃ ꢁ )# 6? B D1B75D 1@@<93 1D9? >C
Q " 1<? 75>ꢆ6B55 13 3 ? B49>7 D? #ꢃ ꢁ ꢌ ꢈ ꢍ ꢎ ꢏ ꢆꢍ ꢆꢍ ꢈ
Type
#))ꢈ ꢖ ꢏ ' ꢉ ꢕ ' ꢖ !
#)#ꢈ ꢖ ꢏ ' ꢉ ꢕ ' ꢖ !
#)ꢗ ꢈ ꢖ ꢌ ' ꢉ ꢕ ' ꢖ !
Package
Marking
E=%ID%**(%+
)+1C(0C
E=%ID%*.*%+
)+1C(0C
E=%ID%*.+%+
)+.C(0C
Maximum ratings, 1D T Vꢐ ꢍ ꢑ Tꢁ ꢇ E><5CC ? D85BG9C5 C@53 96954
Value
Parameter
Symbol Conditions
Unit
I 9
T 8ꢐ ꢍ ꢑ Tꢁ
T 8ꢐ ꢈ ꢉ ꢉ Tꢁ
T 8ꢐ ꢍ ꢑ Tꢁ
ꢁ ? >D9>E? EC 4B19> 3 EBB5>D
,-
+1
6
)E<C54 4B19> 3 EBB5>D*#
I 9$\aX_Q
E 6H
)0(
ꢒ F1<1>3 85 5>5B7Iꢇ C9>7<5 @E<C5+#
!1D5 C? EB3 5 F? <D175
I 9ꢐ ꢎ ꢑ ꢒ ꢇ R =Hꢐ ꢍ ꢑ "
-(
Y@
J
V =H
q*(
P `[`
T 8ꢐ ꢍ ꢑ Tꢁ
)? G5B 49CC9@1D9? >
/1
K
Tꢁ
T Vꢇ T _`S
( @5B1D9>7 1>4 CD? B175 D5=@5B1DEB5
#ꢃ ꢁ 3 <9=1D93 3 1D57? BIꢋ ꢀ #' #ꢃ ꢁ ꢌ ꢕ ꢆꢈ
ꢆꢑ ꢑ ꢓꢓꢓ ꢈ ꢔ ꢑ
ꢑ ꢑ ꢂꢈ ꢔ ꢑ ꢂꢑ ꢌ
)#$ ꢆ,-ꢀ ꢍ ꢉ 1>4 $ ꢃ ,ꢀ ꢍ ꢍ
*# ,55 697EB5 ꢖ 6? B =? B5 45D19<54 9>6? B=1D9? >
+# ,55 697EB5 ꢈ ꢖ 6? B =? B5 45D19<54 9>6? B=1D9? >
+ 5Fꢓ ꢍ ꢓꢑ
@175 ꢈ
ꢍ ꢉ ꢈ ꢉ ꢆꢉ ꢈ ꢆꢍ ꢍ
IPP139N08N3 G IPI139N08N3 G
IPB136N08N3 G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R `T@8
-85B=1< B5C9CD1>3 5ꢇ :E>3 D9? > ꢆ 3 1C5
-85B=1< B5C9CD1>3 5ꢇ
%
ꢆ
%
%
ꢆ
%
)&1
ꢌ ꢍ
,(
A'K
R `T@6
=9>9=1< 6? ? D@B9>D
ꢌ 3 =* 3 ? ? <9>7 1B51,#
:E>3 D9? > ꢆ 1=2 95>D
Electrical characteristics, 1D T Vꢐ ꢍ ꢑ Tꢁ ꢇ E><5CC ? D85BG9C5 C@53 96954
Static characteristics
V "7G#9HH
V =H"`T#
V
V
=Hꢐ ꢉ .ꢇ I 9ꢐ ꢈ =ꢒ
9H4V =Hꢇ I 9ꢐ ꢖ ꢖ V ꢒ
ꢀ B19>ꢆC? EB3 5 2 B51;4? G> F? <D175
!1D5 D8B5C8? <4 F? <D175
0(
*
%
%
J
*&0
+&-
V
9Hꢐ ꢕ ꢉ .ꢇ V =Hꢐ ꢉ .ꢇ
I 9HH
05B? 71D5 F? <D175 4B19> 3 EBB5>D
%
%
(&)
)(
)
r6
T Vꢐ ꢍ ꢑ Tꢁ
V
9Hꢐ ꢕ ꢉ .ꢇ V =Hꢐ ꢉ .ꢇ
)((
T Vꢐ ꢈ ꢍ ꢑ Tꢁ
I =HH
V
V
V
=Hꢐ ꢍ ꢉ .ꢇ V 9Hꢐ ꢉ .
=Hꢐ ꢈ ꢉ .ꢇ I 9ꢐ ꢎ ꢑ ꢒ
=Hꢐ ꢌ .ꢇ I 9ꢐ ꢍ ꢍ ꢓꢑ ꢒ
!1D5ꢆC? EB3 5 <51;175 3 EBB5>D
%
%
%
)
)(( Z6
R 9H"[Z#
ꢀ B19>ꢆC? EB3 5 ? >ꢆCD1D5 B5C9CD1>3 5
))&0
).&(
)+&1
*.
Y"
V =Hꢐ ꢈ ꢉ .ꢇ I 9ꢐ ꢎ ꢑ ꢒ ꢇ
"HB9#
R 9H"[Z#
ꢀ B19>ꢆC? EB3 5 ? >ꢆCD1D5 B5C9CD1>3 5
%
))&-
)+&.
V
"HB9#
=Hꢐ ꢌ .ꢇ I 9ꢐ ꢍ ꢍ ꢓꢑ ꢒ ꢇ
%
%
).&(
*
*.&(
R =
g R_
!1D5 B5C9CD1>3 5
%
%
"
gV 9Hg5*gI 9gR 9H"[Z#YMdꢇ
I 9ꢐ ꢎ ꢑ ꢒ
I^MZ_O[ZPaO`MZOQ
*,
,0
H
*
,# ꢀ 5F93 5 ? > ꢎ ꢉ == H ꢎ ꢉ == H ꢈ ꢓꢑ == 5@? HI )ꢁ ꢗ + ꢎ G9D8 ꢌ 3 = ꢄ? >5 <1I5Bꢇ ꢔ ꢉ V = D893 ;ꢅ 3 ? @@5B 1B51 6? B 4B19>
3 ? >>53 D9? >ꢓ )ꢁ ꢗ 9C F5BD93 1< 9> CD9<< 19Bꢓ
+ 5Fꢓ ꢍ ꢓꢑ
@175 ꢍ
ꢍ ꢉ ꢈ ꢉ ꢆꢉ ꢈ ꢆꢍ ꢍ
IPP139N08N3 G IPI139N08N3 G
IPB136N08N3 G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
#>@ED 3 1@13 9D1>3 5
( ED@ED 3 1@13 9D1>3 5
+ 5F5BC5 DB1>C65B 3 1@13 9D1>3 5
-EB>ꢆ? > 45<1I D9=5
+ 9C5 D9=5
C U__
%
%
%
%
%
%
%
)+((
+-+
)-
)/+( \<
V
=Hꢐ ꢉ .ꢇ V 9Hꢐ ꢎ ꢉ .ꢇ
C [__
C ^__
t P"[Z#
t ^
,.1
%
f ꢐ ꢈ & " J
)*
%
%
%
%
Z_
+-
V
99ꢐ ꢎ ꢉ .ꢇ V =Hꢐ ꢈ ꢉ .ꢇ
I 9ꢐ ꢎ ꢑ ꢒ ꢇ R =ꢐ ꢈ ꢓꢌ "
t P"[RR#
t R
-EB>ꢆ? 66 45<1I D9=5
1<< D9=5
)0
-
!1D5 ꢁ 81BS5 ꢁ 81B13 D5B9CD93 C-#
!1D5 D? C? EB3 5 3 81B75
!1D5 D? 4B19> 3 81B75
,G9D3 89>7 3 81B75
Q S_
%
%
%
%
%
%
/
,
%
%
Z8
Q SP
V
V
99ꢐ ꢎ ꢉ .ꢇ I 9ꢐ ꢎ ꢑ ꢒ ꢇ
=Hꢐ ꢉ D? ꢈ ꢉ .
Q _c
Q S
0
%
!1D5 3 81B75 D? D1<
)1
-&-
*-
*-
%
V \XM`QMa
Q [__
!1D5 @<1D51E F? <D175
( ED@ED 3 81B75
J
V
99ꢐ ꢎ ꢉ .ꢇ V =Hꢐ ꢉ .
+,
Z8
Reverse Diode
I H
ꢀ 9? 45 3 ? >D9>? EC 6? BG1B4 3 EBB5>D
ꢀ 9? 45 @E<C5 3 EBB5>D
%
%
%
%
,-
6
J
T 8ꢐ ꢍ ꢑ Tꢁ
I H$\aX_Q
)0(
V
=Hꢐ ꢉ .ꢇ I <ꢐ ꢎ ꢑ ꢒ ꢇ
V H9
ꢀ 9? 45 6? BG1B4 F? <D175
%
)&(
)&*
T Vꢐ ꢍ ꢑ Tꢁ
t ^^
+ 5F5BC5 B53 ? F5BI D9=5
%
%
-(
/,
%
%
Z_
V Gꢐ ꢎ ꢉ .ꢇ I <4I Hꢇ
Pi <'Pt ꢐ ꢈ ꢉ ꢉ ꢒ ꢂV C
Q ^^
+ 5F5BC5 B53 ? F5BI 3 81B75
Z8
-# ,55 697EB5 ꢈ ꢌ 6? B 71D5 3 81B75 @1B1=5D5B 4569>9D9? >
+ 5Fꢓ ꢍ ꢓꢑ
@175 ꢖ
ꢍ ꢉ ꢈ ꢉ ꢆꢉ ꢈ ꢆꢍ ꢍ
IPP139N08N3 G IPI139N08N3 G
IPB136N08N3 G
1 Power dissipation
2 Drain current
P
`[`4R"T 8#
I 94R"T 8ꢅꢋ V =H"ꢈ ꢉ .
80
50
40
30
20
10
0
60
40
20
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
I 94R"V 9Hꢅꢋ T 8ꢐ ꢍ ꢑ Tꢁ ꢋ D 4(
@1B1=5D5Bꢘ t \
4 Max. transient thermal impedance
`T@84R"t \#
Z
@1B1=5D5Bꢘ D 4t \'T
103
101
<9=9D54 2 I ? >ꢆCD1D5
^Q_U_`MZOQ
ꢈ V C
102
101
100
100
(&-
ꢈ ꢉ V C
(&*
(&)
ꢈ ꢉ ꢉ V C
(&(-
(&(*
ꢈ =C
10-1
(&()
ꢈ ꢉ =C
C9>7<5 @E<C5
98
10-2
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
V DS [V]
t p [s]
+ 5Fꢓ ꢍ ꢓꢑ
@175 ꢎ
ꢍ ꢉ ꢈ ꢉ ꢆꢉ ꢈ ꢆꢍ ꢍ
IPP139N08N3 G IPI139N08N3 G
IPB136N08N3 G
5 Typ. output characteristics
I 94R"V 9Hꢅꢋ T Vꢐ ꢍ ꢑ Tꢁ
6 Typ. drain-source on resistance
9H"[Z#4R"I 9ꢅꢋ T Vꢐ ꢍ ꢑ Tꢁ
R
@1B1=5D5Bꢘ V =H
@1B1=5D5Bꢘ V =H
150
30
ꢈ ꢉ .
ꢕ .
ꢔ .
ꢌ ꢓꢑ .
ꢑ .
ꢑ ꢓꢑ .
ꢌ .
100
20
ꢌ ꢓꢑ .
ꢔ .
ꢕ .
ꢌ .
ꢈ ꢉ .
50
10
ꢑ ꢓꢑ .
ꢑ .
ꢎ ꢓꢑ .
0
0
0
0
1
2
3
4
5
40
80
120
V DS [V]
I D [A]
7 Typ. transfer characteristics
I 94R"V =Hꢅꢋ KV 9Hg5*gI 9gR 9H"[Z#YMd
@1B1=5D5Bꢘ T V
8 Typ. forward transconductance
g R_4R"I 9ꢅꢋ T Vꢐ ꢍ ꢑ Tꢁ
120
80
60
40
20
0
80
40
ꢈ ꢔ ꢑ Tꢁ
ꢍ ꢑ Tꢁ
0
0
2
4
6
8
0
20
40
60
80
100
V GS [V]
I D [A]
+ 5Fꢓ ꢍ ꢓꢑ
@175 ꢑ
ꢍ ꢉ ꢈ ꢉ ꢆꢉ ꢈ ꢆꢍ ꢍ
IPP139N08N3 G IPI139N08N3 G
IPB136N08N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
=H"`T#4R"T Vꢅꢋ V =H4V 9H
R
9H"[Z#4R"T Vꢅꢋ I 9ꢐ ꢎ ꢑ ꢒ ꢋ V =Hꢐ ꢈ ꢉ .
V
@1B1=5D5Bꢘ I 9
30
25
20
4
3
2
1
ꢖ ꢖ ꢉ V ꢒ
ꢖ ꢖ V ꢒ
YMd
15
`e\
10
5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I <4R"V H9
C 4R"V 9Hꢅꢋ V =Hꢐ ꢉ .ꢋ f ꢐ ꢈ & " J
#
@1B1=5D5Bꢘ T V
104
103
8U__
103
8[__
102
ꢍ ꢑ Tꢁ
ꢈ ꢔ ꢑ Tꢁ ꢇ ꢏ ꢕ ꢊ
ꢈ ꢔ ꢑ Tꢁ
102
8^__
101
ꢍ ꢑ Tꢁ ꢇ ꢏ ꢕ ꢊ
101
100
100
0
0
20
40
60
80
0.5
1
1.5
V SD [V]
2
2.5
V DS [V]
+ 5Fꢓ ꢍ ꢓꢑ
@175 ꢌ
ꢍ ꢉ ꢈ ꢉ ꢆꢉ ꢈ ꢆꢍ ꢍ
IPP139N08N3 G IPI139N08N3 G
IPB136N08N3 G
13 Avalanche characteristics
6H4R"t 6Jꢅꢋ R =Hꢐ ꢍ ꢑ "
14 Typ. gate charge
=H4R"Q SM`Qꢅꢋ I 9ꢐ ꢎ ꢑ ꢒ @E<C54
V
I
@1B1=5D5Bꢘ T V"_`M^`#
@1B1=5D5Bꢘ V 99
100
12
ꢎ ꢉ .
10
8
ꢈ ꢌ .
ꢌ ꢎ .
ꢍ ꢑ Tꢁ
ꢈ ꢉ ꢉ Tꢁ
10
6
ꢈ ꢑ ꢉ Tꢁ
4
2
1
0
0
0.1
1
10
t AV [µs]
100
1000
5
10
15
20
Q gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
7G"9HH#4R"T Vꢅꢋ I 9ꢐ ꢈ =ꢒ
90
85
80
75
70
65
60
V =H
Q g
V S _"`T#
Q S"`T#
Q _c
Q SP
Q gate
Q S_
-60
-20
20
60
100
140
180
T j [°C]
+ 5Fꢓ ꢍ ꢓꢑ
@175 ꢔ
ꢍ ꢉ ꢈ ꢉ ꢆꢉ ꢈ ꢆꢍ ꢍ
IPP139N08N3 G IPI139N08N3 G
IPB136N08N3 G
PG-TO-263-3 (D²-Pak)
+ 5Fꢓ ꢍ ꢓꢑ
@175 ꢕ
ꢍ ꢉ ꢈ ꢉ ꢆꢉ ꢈ ꢆꢍ ꢍ
IPP139N08N3 G IPI139N08N3 G
IPB136N08N3 G
PG-TO-262-3 (I²-Pak)
+ 5Fꢓ ꢍ ꢓꢑ
@175 ꢏ
ꢍ ꢉ ꢈ ꢉ ꢆꢉ ꢈ ꢆꢍ ꢍ
IPP139N08N3 G IPI139N08N3 G
IPB136N08N3 G
PG-TO-220-3
+ 5Fꢓ ꢍ ꢓꢑ
@175 ꢈ ꢉ
ꢍ ꢉ ꢈ ꢉ ꢆꢉ ꢈ ꢆꢍ ꢍ
IPP139N08N3 G IPI139N08N3 G
IPB136N08N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
+ 5Fꢓ ꢍ ꢓꢑ
@175 ꢈ ꢈ
ꢍ ꢉ ꢈ ꢉ ꢆꢉ ꢈ ꢆꢍ ꢍ
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