IPP13N03LBG_08 [INFINEON]
OptiMOS2 Power-Transistor; OptiMOS2功率三极管
| 型号： | IPP13N03LBG_08 |
| 厂家： | 
Infineon |
| 描述： | OptiMOS2 Power-Transistor |
| 文件： | 总9页 (文件大小：272K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPP13N03LB G
OptiMOS®2 Power-Transistor
Product Summary
Features
V DS
30
12.8
30
V
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target application
R DS(on),max
I D
mΩ
A
• N-channel - Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
PG-TO220-3-1
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated
• Pb-free lead plating; RoHS compliant
Type
Package
Marking
IPP13N03LB G
PG-TO220-3-1
13N03LB
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
T C=25 °C2)
I D
Continuous drain current
30
30
A
T C=100 °C
T C=25 °C3)
I D,pulse
Pulsed drain current
120
64
E AS
I D=30 A, R GS=25 Ω
Avalanche energy, single pulse
mJ
I D=30 A, V DS=20 V,
di /dt =200 A/µs,
Reverse diode dv /dt
dv /dt
6
kV/µs
T
j,max=175 °C
Gate source voltage4)
V GS
±20
52
V
P tot
T C=25 °C
Power dissipation
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
1) J-STD20 and JESD22
Rev. 0.95
page 1
2008-05-06
IPP13N03LB G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
SMD version, device on PCB
-
-
-
-
-
-
2.9
62
40
K/W
R thJA
minimal footprint
6 cm2 cooling area5)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=1 mA
DS=V GS, I D=20 µA
Drain-source breakdown voltage
Gate threshold voltage
30
-
-
V
1.2
1.6
2
V
DS=30 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
-
0.1
10
1
µA
T j=25 °C
V
DS=30 V, V GS=0 V,
100
T j=125 °C
I GSS
V
V
V
GS=20 V, V DS=0 V
GS=4.5 V, I D=20 A
GS=10 V, I D=30 A
Gate-source leakage current
-
-
-
-
1
100 nA
R DS(on)
Drain-source on-state resistance
15.2
10.7
1
18.9
12.8
-
mΩ
R G
g fs
Gate resistance
Ω
|V DS|>2|I D|R DS(on)max
I D=60 A
,
Transconductance
57
-
S
2) Current is limited by bondwire; with anR thJC=2.9 K/W the chip is able to carry 47 A.
3) See figure 3
4) T j,max=150 °C and duty cycle D <0.25 for V GS<-5 V
2
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
5 Diagrams are related to straight lead versions.
Rev. 0.95
page 2
2008-05-06
IPP13N03LB G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
1019
364
49
1355 pF
485
V
GS=0 V, V DS=15 V,
C oss
Crss
t d(on)
t r
f =1 MHz
74
4
7
6
ns
4
V
DD=15 V, V GS=10 V,
I D=20 A, R G=2.7 Ω
t d(off)
t f
Turn-off delay time
Fall time
16
24
4.2
2.8
Gate Charge Characteristics6)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
4.0
1.6
2.3
5
5
2.2
3.5
7
nC
Q g(th)
Q gd
V
V
DD=15 V, I D=40 A,
GS=0 to 5 V
Q sw
Q g
Gate charge total
8
10
-
V plateau
Gate plateau voltage
3.9
V
V
V
DS=0.1 V,
Q g(sync)
Q oss
Gate charge total, sync. FET
Output charge
-
-
7
8
9
nC
GS=0 to 5 V
V
DD=15 V, V GS=0 V
11
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
78
A
T C=25 °C
I S,pulse
120
V
GS=0 V, I F=80 A,
V SD
Q rr
Diode forward voltage
-
-
1.23
-
1.2
10
V
T j=25 °C
V R=15 V, I F=I S,
di F/dt =400 A/µs
Reverse recovery charge
nC
6) See figure 16 for gate charge parameter definition
Rev. 0.95
page 3
2008-05-06
IPP13N03LB G
1 Power dissipation
2 Drain current
P
tot=f(T C)
I D=f(T C); V GS≥10 V
60
50
40
30
20
10
40
30
20
10
0
0
0
50
100
150
200
0
50
100
150
200
T
C [°C]
T
C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
thJC=f(t p)
Z
parameter: D =t p/T
1000
10
0.5
1
0.2
1 µs
limited by on-state
resistance
100
0.1
10 µs
0.05
0.02
0.1
single pulse
0.01
100 µs
DC
10
1 ms
10 ms
0.01
1
0.001
10-6
10-5
10-4
10-3
10-2
10-1
100
0.1
1
10
100
0
t
p [s]
V
DS [V]
Rev. 0.95
page 4
2008-05-06
IPP13N03LB G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
DS(on)=f(I D); T j=25 °C
R
parameter: V GS
parameter: V GS
100
100
3.2 V
3 V
3.8 V
4.1 V
4.5 V
10 V
90
90
2.8 V
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
4.5 V
4.1 V
3.8 V
3.5 V
3.2 V
10 V
3 V
2.8 V
0
0
20
40
60
80
100
0
1
2
3
V
DS [V]
I
D [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
70
60
50
40
30
20
10
0
100
80
60
40
20
175 °C
25 °C
0
0
1
2
3
4
5
0
20
40
60
80
I
D [A]
V
GS [V]
Rev. 0.95
page 5
2008-05-06
IPP13N03LB G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
GS(th)=f(T j); V GS=V DS
R
DS(on)=f(T j); I D=50 A; V GS=10 V
V
parameter: I D
2.5
24
22
20
18
2
1.5
1
200 µA
16
98 %
14
12
20 µA
typ
10
8
6
0.5
4
2
0
0
-60
-20
20
60
T j [°C]
100
140
180
-60
-20
20
60
T j [°C]
100
140
180
11 Typ. Capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
10000
1000
Ciss
1000
100
10
100
10
175 °C
25 °C
175°C 98%
Coss
25°C 98%
Crss
1
0
5
10
15
20
25
30
0.0
0.5
1.0
SD [V]
1.5
2.0
V
DS [V]
V
Rev. 0.95
page 6
2008-05-06
IPP13N03LB G
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
GS=f(Q gate); I D=40 A pulsed
V
I
parameter: Tj(start)
parameter: V DD
100
12
15 V
10
8
5 V
20 V
25 °C
100 °C
150 °C
10
6
4
2
1
1
0
0
10
100
1000
10
gate [nC]
20
Q
t
AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=1 mA
38
36
34
32
30
28
26
24
22
20
V GS
Q g
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
-60
-20
20
60
100
140
180
T j [°C]
Rev. 0.95
page 7
2008-05-06
IPP13N03LB G
PG-TO220-3-1
Rev. 0.95
page 8
2008-05-06
IPP13N03LB G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 0.95
page 9
2008-05-06
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