IPP70P04P4-09 [INFINEON]
OptiMOS-P2 Power-Transistor; 的OptiMOS -P2功率三极管
| 型号： | IPP70P04P4-09 |
| 厂家： | 
Infineon |
| 描述： | OptiMOS-P2 Power-Transistor |
| 文件： | 总9页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB70P04P4-09
IPI70P04P4-09, IPP70P04P4-09
OptiMOS®-P2 Power-Transistor
Product Summary
V DS
-40
9.1
-70
V
R DS(on) (SMD Version)
mW
A
I D
Features
• P-channel - Normal Level - Enhancement mode
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
4P0409
4P0409
4P0409
IPB70P04P4-09
IPI70P04P4-09
IPP70P04P4-09
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
T C=25°C,
V GS=-10V
Continuous drain current1)
I D
-72
A
T C=100°C,
V GS=-10V
-50
Pulsed drain current2)
I D,pulse
E AS
I AS
T C=25°C
-288
24
I D=-36A
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
mJ
A
-
-72
V GS
P tot
-
±20
V
T C=25 °C
Power dissipation
75
W
°C
T j, T stg
-
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-
-
-55 ... +175
55/175/56
Rev. 1.3
page 1
2011-02-14
IPB70P04P4-09
IPI70P04P4-09, IPP70P04P4-09
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Thermal characteristics2)
R thJC
R thJA
R thJA
Thermal resistance, junction - case
-
-
-
-
-
-
2
K/W
Thermal resistance, junction -
ambient, leaded
62
SMD version, device on PCB
minimal footprint
-
-
-
-
62
40
6 cm2 cooling area2)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0V, I D= -1mA
V GS(th) V DS=V GS, I D=-120µA
Drain-source breakdown voltage
Gate threshold voltage
-40
-
-
V
-2.0
-3.0
-4.0
V DS=-32V, V GS=0V,
T j=25°C
I DSS
Zero gate voltage drain current
-
-
-0.05
-20
-1
µA
V DS=-32V, V GS=0V,
T j=125°C2)
-200
I GSS
V GS=-20V, V DS=0V
Gate-source leakage current
-
-
-
-100 nA
R DS(on) V GS=-10V, I D=-70A
Drain-source on-state resistance
6.9
9.4
9.1
mW
V GS=-10V, I D=-70A,
SMD version
-
6.6
Rev. 1.3
page 2
2011-02-14
IPB70P04P4-09
IPI70P04P4-09, IPP70P04P4-09
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
3700
1400
40
4810 pF
1820
V GS=0V, V DS=-25V,
f =1MHz
80
19
-
-
-
-
ns
V DD=-20V,
V GS=-10V, I D=-70A,
R G=3.5W
15
t d(off)
t f
Turn-off delay time
Fall time
24
31
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
20
10
26
20
70
-
nC
Q gd
V DD=-32V, I D=-70A,
V GS=0 to -10V
Q g
54
V plateau
Gate plateau voltage
-5.4
V
A
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
I S
-
-
-
-
-72
T C=25°C
I S,pulse
-288
V GS=0V, I F=-70A,
T j=25°C
V SD
Diode forward voltage
-
-1.0
-1.3
V
Reverse recovery time2)
t rr
-
-
50
50
-
-
ns
V R=-20V, I F=-50A,
di F/dt =-100A/µs
Reverse recovery charge2)
Q rr
nC
1) Defined by design. Not subject to production test.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.3
page 3
2011-02-14
IPB70P04P4-09
IPI70P04P4-09, IPP70P04P4-09
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≤ -6V
I D = f(T C); V GS ≤ -6V; SMD
80
60
40
20
0
80
60
40
20
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D = f(V DS); T C = 25 °C; D = 0; SMD
parameter: t p
parameter: D =t p/T
101
1000
1 µs
100
0.5
10 µs
100
100 µs
0.1
1 ms
0.05
10-1
0.01
10
10-2
single pulse
10-3
1
10-6
10-5
10-4
10-3
10-2
10-1
100
0.1
1
10
100
t p [s]
-V DS [V]
Rev. 1.3
page 4
2011-02-14
IPB70P04P4-09
IPI70P04P4-09, IPP70P04P4-09
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C; SMD
parameter: V GS
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C; SMD
parameter: V GS
60
300
-10V
-5V
-5.5V
50
40
30
20
10
0
-7V
200
100
0
-6.5V
-6V
-6V
-6.5V
-5.5V
-5V
-7V
-10V
0
36
-I D [A]
72
0
1
2
3
4
5
6
-V DS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = -6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = -70 A; V GS = -10 V; SMD
11
10
9
280
210
140
70
8
7
6
175 °C
25 °C
-55 °C
5
0
-60
-20
20
60
100
140
180
2
3
4
5
6
7
8
T j [°C]
-V GS [V]
Rev. 1.3
page 5
2011-02-14
IPB70P04P4-09
IPI70P04P4-09, IPP70P04P4-09
9 Typ. gate threshold voltage
V GS(th) = f(T j); V GS = V DS
parameter: I D
10 Typ. capacitances
C = f(V DS); V GS = 0 V; f = 1 MHz
104
4
3.6
3.2
Ciss
Coss
103
102
101
-1200µA
2.8
-120µA
2.4
2
Crss
1.6
1.2
0
5
10
15
20
25
30
-60
-20
20
60
T j [°C]
100
140
180
-V DS [V]
11 Typical forward diode characteristicis
IF = f(VSD
12 Drain-source breakdown voltage
)
V BR(DSS) = f(T j); I D = -1 mA
parameter: T j
103
45
44
43
42
41
40
39
38
37
36
35
102
101
100
25 °C
175 °C
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
-60
-20
20
60
100
140
180
-V SD [V]
T j [°C]
Rev. 1.3
page 6
2011-02-14
IPB70P04P4-09
IPI70P04P4-09, IPP70P04P4-09
13 Typ. gate charge
V GS = f(Q gate); I D = -70 A pulsed
parameter: V DD
14 Gate charge waveforms
10
9
8
7
6
5
4
3
2
1
0
-8V
VGS
-32V
Q g
Qgate
Qgd
Q gs
0
20
40
60
Q gate [nC]
Rev. 1.3
page 7
2011-02-14
IPB70P04P4-09
IPI70P04P4-09, IPP70P04P4-09
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2011
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.3
page 8
2011-02-14
IPB70P04P4-09
IPI70P04P4-09, IPP70P04P4-09
Revision History
Version
Date
Changes
1.1
1.2
1.2
1.2
1.2
1.3
02.09.2009 VGS(th): ID changed to 116uA
07.10.2009 VGS(th): ID changed to 120uA
07.10.2009 RDS(on): ID changed to 70A
07.10.2009 VSD: ID changed to 70A
07.10.2009 IGSS: VGS changed to 20V
04.02.2011 Final Data Sheet
Rev. 1.3
page 9
2011-02-14
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