IPS0151STRR [INFINEON]
SINGLE MOSFET DRIVER|MOS|SIP|3PIN|PLASTIC ; 单个MOSFET驱动器|马鞍山| SIP | 3PIN |塑料\n
| 型号： | IPS0151STRR |
| 厂家： | 
Infineon |
| 描述： | SINGLE MOSFET DRIVER|MOS|SIP|3PIN|PLASTIC
|
| 文件： | 总12页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet No.PD60144-K
( )
IPS0151 S
FULLY PROTECTED POWER MOSFET SWITCH
Features
Product Summary
• Over temperature shutdown
• Over current shutdown
• Active clamp
• Low current & logic level input
• E.S.D protection
R
V
25mΩ (max)
ds(on)
50V
35A
clamp
Ishutdown
Description
T T
1.5µs
on/ off
The IPS0151/IPS0151S are fully protected three terminal
SMART POWER MOSFETs that feature over-current,
over-temperature, ESD protection and drain to source
active clamp.These devices combine a HEXFET®
POWER MOSFET and a gate driver. They offer full
protection and high reliability required in harsh envi-
ronments. The driver allows short switching times
and provides efficient protection by turning OFF the
power MOSFET when the temperature exceeds 165oC
or when the drain current reaches 35A. The device
restarts once the input is cycled. The avalanche
capability is significantly enhanced by the active
clamp and covers most inductive load demagnetiza-
tions.
Packages
3-Lead D2Pak
IPS0151S
3-Lead TO-220
PS0151
Typical Connection
Load
D
S
R in series
( if needed )
IN
control
Logic signal
(Refer to lead assignment for correct pin configuration)
www.irf.com
1
IPS0151(S)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (T
print with 70 µm copper thickness.
= 25oC unless otherwise specified). PCB mounting uses the standard foot-
Ambient
Symbol Parameter
Min.
—
Max.
47
Units
Test Conditions
V
V
Maximum drain to source voltage
Maximum Input voltage
Maximum IN current
ds
V
-0.3
-10
7
in
I
I
+10
mA
in, max
sd cont.
(1)
Diode max. continuous current
rth=62oC/W IPS0151
rth=5oC/W IPS015135
rth=80oC/W IPS0151S
—
—
—
—
2.8
35
TO220 free air
TO220 with Rth=5oC/W
SMD220 Std footprint
A
2.2
45
(1)
I
Diode max. pulsed current
sd pulsed
(1)
P
d
Maximum power dissipation
(rth=62oC/W) IPS0151
(rth=80oC/W) IPS0151S
—
—
2
W
1.56
4
ESD1
ESD2
Electrostatic discharge voltage (Human Body)
Electrostatic discharge voltage (Machine Model)
Max. storage temperature
—
C=100pF, R=1500Ω,
kV
—
0.5
150
+150
300
C=200pF, R=0Ω, L=10µH
T
T
T
-55
-40
—
stor.
oC
max. Max. junction temperature
j
Lead temperature (soldering, 10 seconds)
lead
Thermal Characteristics
Symbol Parameter
Min. Typ. Max. Units Test Conditions
—
R
R
1
2
Thermal resistance free air
Thermal resistance junction to case
—
—
55
2
th
th
TO-220
th
th
th
oC/W
—
—
—
R
R
R
1
2
3
Thermal resistance with standard footprint
Thermal resistance with 1" square footprint
Thermal resistance junction to case
—
—
—
60
35
2
2
D PAK (SMD220)
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min. Max. Units
V
V
V
Continuous drain to source voltage
High level input voltage
Low level input voltage
35
6
—
4
ds (max)
IH
IL
V
0
0.5
I
Continuous drain current
(
ds
Tamb=85oC
o
o
o
TAmbient = 85 C, IN = 5V, rth = 60 C/W, Tj = 125 C) IPS0151
—
4.3
3.8
5
A
o
o
o
(
TAmbient = 85 C, IN = 5V, rth = 80 C/W, Tj = 125 C) IPS0151S
—
0.2
R
in
Recommended resistor in series with IN pin
k
Ω
µ
S
T
Max recommended rise time for IN signal (see fig. 2)
Max. frequency in short circuit condition (Vcc = 14V)
—
0
1
r-in (max)
(2)
F -I
r sc
1
kHz
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Application Notes.
2
www.irf.com
IPS0151(S)
Static Electrical Characteristics
(T = 25oC unless otherwise specified.)
j
Symbol Parameter
Min. Typ. Max. Units Test Conditions
ON state resistance T = 25oC
10
—
0
20
35
0.5
25
45
25
R
ds(on)
j
V
= 5V, I = 1A
ds
mΩ
in
T = 150oC
j
I
Drain to source leakage current
Drain to source leakage current
Drain to source clamp voltage 1
V
V
I
= 14V, T = 25oC
j
dss1
cc
o
@Tj=25 C
µA
I
0
5
50
= 40V, T = 25oC
j
dss2
cc
o
@Tj=25 C
V clamp 1
56
= 20mA (see Fig.3 & 4)
47
50
52
55
8.1
1.6
90
d
I =I
d
(see Fig.3 & 4)
V clamp 2 Drain to source clamp voltage 2
shutdown
60
9.5
2
V
I
= 1 mA
V
V
IN to source clamp voltage
IN threshold voltage
7
1
25
50
in
d
in clamp
in th
I
= 50mA, V = 14V
ds
= 5V
,
I
I
ON state IN positive current
OFF state IN positive current
200
250
V
in
V
in -on
130
µA
= 5V
in, -off
in
over-current triggered
Switching Electrical Characteristics
V
cc
= 14V, Resistive Load = 3Ω, Rinput = 50Ω, 100us pulse, T = 25oC, (unless otherwise specified).
j
Symbol Parameter
Min. Typ. Max. Units Test Conditions
T
T
T
T
T
Turn-on delay time
0.25
0.9
3.8
1.5
1.1
30
0.05
0.2
—
0.6
1.5
—
2
on
r
rf
See figure 2
Rise time
Time to (final R
1.3%)
µs
ds(on)
Turn-off delay time
Fall time
0.8
0.4
—
off
f
See figure 2
2
Q
Total gate charge
nC
V
in
= 5V
—
in
Protection Characteristics
Symbol Parameter
Min. Typ. Max. Units Test Conditions
T
Over temperature threshold
Over current threshold
IN protection reset threshold
Time to reset protection
—
20
1.5
2
165
—
50
3
oC
A
See fig. 1
sd
I
35
See fig. 1
sd
V
T
2.3
10
V
µs
µJ
reset
40
V
= 0V, Tj = 25oC
reset
in
Vcc = 14V
EOI_OT Short circuit energy (see application note)
—
400
—
www.irf.com
3
IPS0151(S)
Functional Block Diagram
All values are typical
DRAIN
47 V
200 kΩ
200 Ω
IN
S
Q
Q
8.1 V
R
I sense
T > 165°c
I > Isd
µ
80 A
SOURCE
Lead Assignments
2 (D)
2 (D)
1
3
In D S
1
2
3
In
D
S
D2PAK (SMD220)
TO-220
IPS0151
IPS0151S
Part Number
4
www.irf.com
IPS0151(S)
5 V
0 V
Vin
90 %
10 %
Vin
Ids
Tr-in
t > T reset
t < T reset
Ids
I shutdown
90 %
10 %
Isd
Td on
Td off
tf
tr
T
T shutdown
Tsd
(165 °c)
Vds
Figure 1 - Timing diagram
Figure 2 - IN rise time & switching time definitions
T clamp
Vin
Ids
L
V load
Rem : V load is negative
during demagnetization
+
14 V
-
R
D
S
Vds clamp
Vin
IN
Ids
( Vcc )
5 v
0 v
Vds
( see Appl . Notes to evaluate power dissipation )
Figure 3 - Active clamp waveforms
Figure 4 - Active clamp test circuit
www.irf.com
5
IPS0151(S)
All curves are typical values with standard footprints. Operating in the shaded area is not recommended.
60
50
40
30
20
10
0
200%
180%
160%
140%
120%
100%
80%
Tj = 150oC
Tj = 25oC
60%
40%
20%
0%
0
1
2
3
4
5
6
7
8
-50 -25
0
25 50 75 100 125 150 175
Figure 6 - Normalised Rds ON (%) Vs Tj (oC)
Figure 5 - Rds ON (mΩ) Vs Input Voltage (V)
8
8
toff delay
ton delay
rise time
7
6
5
4
3
2
1
0
7
fall time
6
5
4
3
2
1
0
130% final
rdson
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
Figure 7 - Turn-ON Delay Time, Rise Time & Time
Figure 8 - Turn-OFF Delay Time & Fall Time (us)
Vs Input Voltage (V)
to 130% final R
(us) Vs Input Voltage (V)
ds(on)
6
www.irf.com
IPS0151(S)
1 0 0
1 0
1
1 0 0
1 0
1
delay off
fall time
d e la y o n
ris e t im e
1 3 0% rd s o n
0 .1
0 .1
1 0
1 0 0
1 0 0 0
1 0 0 0 0
10
100
1000
10000
Figure 9 - Turn-ON Delay Time, Rise Time & Time
Figure 10 - Turn-OFF Delay Time & Fall Time (us)
Vs IN Resistor (Ω)
to 130% final Rds
(us) Vs IN Resistor (Ω)
(on)
50
50
45
40
35
30
25
20
15
10
5
45
40
35
30
25
20
15
10
5
Isd 25°C
Ilim 25°C
0
0
0
1
2
3
4
5
6
7
8
-50 -25
0
25 50 75 100 125 150
Figure 11 - Current Iim. & Ishutdown (A) Vs Vin (V)
www.irf.com
Figure 12 - Ishutdown (A) Vs Temperature (oC)
7
IPS0151(S)
30
100
10
1
rth = 5°C/W
rth = 15°C/W
SMD220 1'' footprint
SMD220 std. footprint
28
26
24
22
20
18
16
14
12
10
8
Current path capability
should be above this
Load characteristic should
be below this curve
6
4
2
0
T=25°C
T=100°C
-50
0
50
100
150
200
Figure 13 - Max.Cont. Ids (A) Vs Ambient
Temperature (oC)
Figure 14 - Max.Cont. Ids (A) Vs Ambient
Temperature (oC)
1 0 0
single pulse
100
10
1
100 Hz rth=60°C/W dT=25°C
1kHz rth=60°C/W dT=25°C
1 0
1
Single pulse
rth free air TO220, std
footprint SMD220
0 . 1
rth junction to case =
1.8°C/W
Vbat = 14 V
Tjini = T sd
0 . 0 1
0.1
0 .0 0 1
0 .0 1
0 .1
1
1 0
1 0 0
Figure 16 - Transient Thermal Imped. (oC/W)
Vs Time (s) - IPS0151/IPS051S
Figure 15 - Iclamp (A) Vs Inductive Load (mH)
8
www.irf.com
IPS0151(S)
200
180
160
140
120
100
80
120%
115%
110%
105%
100%
95%
60
90%
Iin,on
Iin,off
Vds clamp @ Isd
40
85%
20
Vin clamp @ 10mA
0
80%
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
Figure 17 - Input current (µA) Vs Junction (oC)
Figure 18 - Vin clamp and V clamp2 (V)
Vs Tjunction (oC)
16
14
12
10
8
Treset
rise time
fall time
6
4
2
0
-50 -25
0
25 50 75 100 125 150
Figure 19 - Turn-on, Turn-off, and Treset (µs)
Vs Tjunction (oC)
www.irf.com
9
IPS0151(S)
Case Outline
2
NOTES:
2X
01-6024 00
IRGB 01-3026 01 (TO-220AB)
3-Lead TO-220AB
10
www.irf.com
IPS0151(S)
Case Outline
01-6022 00
115-0088 10 (TO-263AB)
2
3-Lead D PAK
www.irf.com
11
IPS0151(S)
Tape & Reel - D2PAK (SMD220)
01-3072 00
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
Data and specifications subject to change without notice. 11/13/2001
12
www.irf.com
相关型号：
©2020 ICPDF网 联系我们和版权申明