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IPT010N08NM5 [INFINEON]

IPT010N08NM5 是英飞凌同类产品中最好的 80V 功率 MOSFET，采用TO-Leadless (TOLL) 封装， 在 25˚C 和 175˚C 条件下具备业界最低的导通电阻 RDS(on)。 OptiMOS™ 5 硅技术是英飞凌最新一代的功率 MOSFET，专为电信和服务器电源的同步整流而设计。 得益于 TOLL 封装，IPT010N08NM5 适用于高电流应用（高达 425 A），如叉车、轻型电动车 (LEV)、低压驱动器和电池管理系统 (BMS)。;
IPT010N08NM5
型号： IPT010N08NM5
厂家： Infineon    Infineon
描述：

IPT010N08NM5 是英飞凌同类产品中最好的 80V 功率 MOSFET，采用TO-Leadless (TOLL) 封装， 在 25˚C 和 175˚C 条件下具备业界最低的导通电阻 RDS(on)。 OptiMOS™ 5 硅技术是英飞凌最新一代的功率 MOSFET，专为电信和服务器电源的同步整流而设计。 得益于 TOLL 封装，IPT010N08NM5 适用于高电流应用（高达 425 A），如叉车、轻型电动车 (LEV)、低压驱动器和电池管理系统 (BMS)。

电池 驱动 服务器 电信 驱动器
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中文：  中文翻译
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IPT010N08NM5  
MOSFET  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ80ꢀV  
HSOF  
Features  
Tab  
•ꢀN-channel,ꢀnormalꢀlevel  
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)  
•ꢀIdealꢀforꢀhighꢀfrequencyꢀswitchingꢀandꢀsync.ꢀrec.  
•ꢀ100%ꢀavalancheꢀtested  
1
2
3
4
5
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
6
7
8
Productꢀvalidation  
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications  
Drain  
Tab  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Gate  
Pin 1  
Parameter  
Value  
Unit  
Source  
Pin 2-8  
VDS  
80  
V
RDS(on),max  
ID  
1.05  
425  
207  
178  
mΩ  
A
Qoss  
nC  
nC  
QG  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IPT010N08NM5  
PG-HSOF-8  
010N08N5  
-
Final Data Sheet  
1
Rev.ꢀ2.0,ꢀꢀ2020-12-09  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ80ꢀV  
IPT010N08NM5  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Final Data Sheet  
2
Rev.ꢀ2.0,ꢀꢀ2020-12-09  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ80ꢀV  
IPT010N08NM5  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
VGS=10ꢀV,ꢀTC=25ꢀ°C  
VGS=10ꢀV,ꢀTC=100ꢀ°C  
-
-
-
-
-
-
425  
301  
43  
Continuous drain current1)  
ID  
A
VGS=10ꢀV,ꢀTA=25ꢀ°C,  
RTHJA=40ꢀ°C/W2)  
Pulsed drain current3)  
Avalanche energy, single pulse4)  
ID,pulse  
EAS  
-
-
-
-
1700  
817  
20  
A
TA=25ꢀ°C  
-
mJ  
V
ID=150ꢀA,ꢀRGS=25ꢀΩ  
Gate source voltage  
VGS  
-20  
-
-
-
-
-
375  
3.8  
TC=25ꢀ°C  
Power dissipation  
Ptot  
W
TA=25ꢀ°C,ꢀRTHJA=40ꢀ°C/W2)  
IEC climatic category; DIN IEC 68-1:  
55/175/56  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
175  
°C  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
0.2  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case  
RthJC  
RthJA  
-
0.4  
°C/W -  
°C/W -  
Thermal resistance, junction - ambient,  
6 cm² cooling area  
-
-
-
-
40  
62  
Thermal resistance, junction - ambient,  
minimal footprint2)  
RthJA  
°C/W -  
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature  
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual  
environmental conditions.  
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
3) See Diagram 3 for more detailed information  
4) See Diagram 13 for more detailed information  
Final Data Sheet  
3
Rev.ꢀ2.0,ꢀꢀ2020-12-09  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ80ꢀV  
IPT010N08NM5  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
80  
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
V
V
VGS=0ꢀV,ꢀID=1ꢀmA  
2.2  
3.0  
3.8  
VDS=VGS,ꢀID=280ꢀµA  
-
-
0.1  
10  
1
100  
VDS=80ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=80ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
IDSS  
µA  
nA  
IGSS  
-
10  
100  
VGS=20ꢀV,ꢀVDS=0ꢀV  
-
-
0.96  
1.2  
1.05  
1.7  
VGS=10ꢀV,ꢀID=150ꢀA  
VGS=6ꢀV,ꢀID=75ꢀA  
RDS(on)  
mΩ  
Gate resistance1)  
Transconductance  
RG  
gfs  
-
1.6  
2.4  
-
Ω
-
120  
270  
S
|VDS|≥2|ID|RDS(on)max,ꢀID=100ꢀA  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics1)ꢀ  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Ciss  
Coss  
Crss  
-
-
-
12000 16000 pF  
2000 2600 pF  
VGS=0ꢀV,ꢀVDS=40ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=40ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=40ꢀV,ꢀf=1ꢀMHz  
Output capacitance  
Reverse transfer capacitance  
86  
35  
150  
-
pF  
ns  
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=150ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=150ꢀA,  
RG,ext=1.6ꢀΩ  
31  
82  
30  
-
-
-
ns  
ns  
ns  
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=150ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-off delay time  
Fall time  
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=150ꢀA,  
RG,ext=1.6ꢀΩ  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ  
Values  
Typ.  
55  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate charge at threshold  
Gate to drain charge1)  
Switching charge  
Qgs  
-
-
-
-
-
-
-
-
-
nC  
nC  
nC  
nC  
nC  
V
VDD=40ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=40ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=40ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=40ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=40ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=40ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ10ꢀV  
Qg(th)  
Qgd  
37  
-
37  
56  
Qsw  
55  
-
Gate charge total1)  
Qg  
178  
4.4  
223  
Gate plateau voltage  
Gate charge total, sync. FET  
Output charge1)  
Vplateau  
Qg(sync)  
Qoss  
-
153  
207  
-
nC  
nC  
275  
VDS=40ꢀV,ꢀVGS=0ꢀV  
1) Defined by design. Not subject to production test.  
2) See ″Gate charge waveforms″ for parameter definition  
Final Data Sheet  
4
Rev.ꢀ2.0,ꢀꢀ2020-12-09  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ80ꢀV  
IPT010N08NM5  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
213  
1700  
1
Diode continuous forward current  
Diode pulse current  
IS  
-
-
-
-
-
A
TC=25ꢀ°C  
IS,pulse  
VSD  
trr  
-
A
TC=25ꢀ°C  
Diode forward voltage  
0.87  
106  
318  
V
VGS=0ꢀV,ꢀIF=150ꢀA,ꢀTj=25ꢀ°C  
VR=40ꢀV,ꢀIF=100ꢀA,ꢀdiF/dt=100ꢀA/µs  
VR=40ꢀV,ꢀIF=100ꢀA,ꢀdiF/dt=100ꢀA/µs  
Reverse recovery time1)  
Reverse recovery charge1)  
212  
636  
ns  
nC  
Qrr  
1) Defined by design. Not subject to production test.  
Final Data Sheet  
5
Rev.ꢀ2.0,ꢀꢀ2020-12-09  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ80ꢀV  
IPT010N08NM5  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
400  
500  
350  
300  
250  
200  
150  
100  
50  
400  
300  
200  
100  
0
0
0
25  
50  
75  
100  
125  
150  
175  
200  
0
25  
50  
75  
100  
125  
150  
175  
200  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
ID=f(TC);ꢀVGS≥10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
104  
101  
single pulse  
0.01  
0.02  
0.05  
0.1  
0.2  
1 µs  
103  
102  
101  
100  
10-1  
10-2  
10 µs  
100  
0.5  
100 µs  
10-1  
10-2  
10-3  
1 ms  
10 ms  
DC  
10-1  
100  
101  
102  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.0,ꢀꢀ2020-12-09  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ80ꢀV  
IPT010N08NM5  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
1750  
3.0  
8 V  
10 V  
7 V  
6 V  
1500  
1250  
1000  
750  
2.5  
4.5 V  
2.0  
5 V  
1.5  
1.0  
0.5  
0.0  
6 V  
7 V  
8 V  
10 V  
500  
5 V  
250  
4.5 V  
0
0
1
2
3
4
5
0
200  
400  
600  
800  
1000  
VDSꢀ[V]  
IDꢀ[A]  
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
1750  
3.0  
1500  
1250  
1000  
750  
2.5  
175 °C  
2.0  
1.5  
1.0  
500  
25 °C  
0.5  
250  
175 °C  
25 °C  
0
0.0  
0
1
2
3
4
5
6
7
3
6
9
12  
15  
VGSꢀ[V]  
VGSꢀ[V]  
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
RDS(on)=f(VGS),ꢀID=150ꢀA;ꢀparameter:ꢀTj  
Final Data Sheet  
7
Rev.ꢀ2.0,ꢀꢀ2020-12-09  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ80ꢀV  
IPT010N08NM5  
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
2.0  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1.6  
1.2  
0.8  
0.4  
0.0  
2800 µA  
280 µA  
-80  
-40  
0
40  
80  
120  
160  
200  
-80  
-40  
0
40  
80  
120  
160  
200  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj),ꢀID=150ꢀA,ꢀVGS=10ꢀV  
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
105  
104  
25 °C  
25 °C, max  
175 °C  
175 °C, max  
104  
103  
102  
101  
Ciss  
103  
102  
101  
Coss  
Crss  
0
10  
20  
30  
40  
50  
60  
70  
80  
0.00  
0.25  
0.50  
0.75  
1.00  
1.25  
1.50  
VDSꢀ[V]  
VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
8
Rev.ꢀ2.0,ꢀꢀ2020-12-09  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ80ꢀV  
IPT010N08NM5  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
103  
10  
16 V  
40 V  
64 V  
8
6
4
2
0
102  
25 °C  
100 °C  
101  
150 °C  
100  
100  
101  
102  
103  
0
25  
50  
75  
100  
125  
150  
175  
200  
tAVꢀ[µs]  
Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start  
VGS=f(Qgate),ꢀID=150ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagram Gate charge waveforms  
88  
86  
84  
82  
80  
78  
76  
-80  
-40  
0
40  
80  
120  
160  
200  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
Final Data Sheet  
9
Rev.ꢀ2.0,ꢀꢀ2020-12-09  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ80ꢀV  
IPT010N08NM5  
5ꢀꢀꢀꢀꢀPackageꢀOutlines  
1) partially covered with Mold Flash  
MILLIMETERS  
INCHES  
DIM  
MIN  
2.20  
0.70  
9.70  
0.42  
0.40  
10.28  
MAX  
2.40  
0.90  
9.90  
0.50  
0.60  
10.58  
MIN  
MAX  
0.094  
0.035  
0.390  
0.020  
0.024  
0.416  
DOCUMENT NO.  
Z8B00169619  
A
b
0.087  
0.028  
0.382  
0.017  
0.016  
0.405  
b1  
b2  
c
0
SCALE  
D
2
D2  
E
3.30  
0.130  
9.70  
10.10  
0.382  
0.398  
0
2
E1  
E4  
E5  
e
7.50  
8.50  
0.295  
0.335  
4mm  
9.46  
1.20 (BSC)  
0.372  
0.047 (BSC)  
EUROPEAN PROJECTION  
H
11.48  
6.55  
11.88  
6.75  
0.452  
0.258  
0.468  
0.266  
H1  
H2  
H3  
H4  
N
7.15  
3.59  
3.26  
8
0.281  
0.141  
0.128  
8
ISSUE DATE  
20-02-2014  
K1  
L
4.18  
0.165  
1.60  
1.00  
2.10  
1.30  
0.063  
0.039  
0.083  
0.051  
L1  
L2  
L4  
0.70  
0.60  
0.028  
0.024  
REVISION  
02  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-HSOF-8,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
10  
Rev.ꢀ2.0,ꢀꢀ2020-12-09  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ80ꢀV  
IPT010N08NM5  
RevisionꢀHistory  
IPT010N08NM5  
Revision:ꢀ2020-12-09,ꢀRev.ꢀ2.0  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
Release of final version  
2.0  
2020-12-09  
Trademarks  
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Final Data Sheet  
11  
Rev.ꢀ2.0,ꢀꢀ2020-12-09  

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