IPT65R080CFD7 [INFINEON]
Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPT65R080CFD7 in a TOLL package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50 V breakdown voltage.;
| 型号： | IPT65R080CFD7 |
| 厂家： | 
Infineon |
| 描述： | Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPT65R080CFD7 in a TOLL package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50 V breakdown voltage. |
| 文件： | 总14页 (文件大小：1415K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPT65R080CFD7
MOSFET
PG-HSOF-8
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
Theꢀlatestꢀ650ꢀVꢀCoolMOS™ꢀCFD7ꢀextendsꢀtheꢀvoltageꢀclassꢀofferingꢀof
theꢀCFD7ꢀfamilyꢀandꢀisꢀaꢀsuccessorꢀtoꢀtheꢀ650ꢀVꢀCoolMOS™ꢀCFD2.
Resultingꢀfromꢀimprovedꢀswitchingꢀperformanceꢀandꢀexcellentꢀthermal
behavior,ꢀ650ꢀVꢀCooMOS™ꢀCFD7ꢀoffersꢀhighestꢀefficiencyꢀinꢀresonant
switchingꢀtopologies,ꢀsuchꢀasꢀLLCꢀandꢀphase-shift-full-bridgeꢀ(ZVS).ꢀAs
partꢀofꢀInfineon’sꢀfastꢀbodyꢀdiodeꢀportfolio,ꢀthisꢀnewꢀproductꢀseriesꢀblends
allꢀadvantagesꢀofꢀaꢀfastꢀswitchingꢀtechnologyꢀtogetherꢀwithꢀsuperiorꢀhard
commutationꢀrobustness.ꢀTheꢀCoolMOS™ꢀCFD7ꢀtechnologyꢀmeets
highestꢀefficiencyꢀandꢀreliabilityꢀstandardsꢀandꢀfurthermoreꢀsupportsꢀhigh
powerꢀdensityꢀsolutions.
Tab
Tab
1
2
3
8
4
7
6
5
6
7
5
8
4
3
2
1
Features
Drain
Tab
•ꢀUltra-fastꢀbodyꢀdiode
•ꢀ650Vꢀbreakꢀdownꢀvoltage
•ꢀBest-in-classꢀRDS(on)
•ꢀReducedꢀswitchingꢀlosses
•ꢀLowꢀRDS(on)ꢀdependencyꢀoverꢀtemperature
*1
Gate
Pin 1
Driver
Source
Pin 2
Source
Pin 3-8
*1: Internal body diode
Benefits
•ꢀExcellentꢀhardꢀcommutationꢀruggedness
•ꢀExtraꢀsafetyꢀmarginꢀforꢀdesignsꢀwithꢀincreasedꢀbusꢀvoltage
•ꢀEnablingꢀincreasedꢀpowerꢀdensityꢀsolutions
•ꢀOutstandingꢀlightꢀloadꢀefficiencyꢀinꢀindustrialꢀSMPSꢀapplications
•ꢀImprovedꢀfullꢀloadꢀefficiencyꢀinꢀindustrialꢀSMPSꢀapplications
Potentialꢀapplications
Optimizedꢀforꢀphase-shiftꢀfull-bridgeꢀ(ZVS),ꢀLLCꢀApplicationsꢀ–ꢀServer,
Telecom,ꢀEVꢀCharging,ꢀSolar
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Pleaseꢀnote:ꢀTheꢀsourceꢀandꢀsenseꢀsourceꢀpinsꢀareꢀnotꢀexchangeable.
Theirꢀexchangeꢀmightꢀleadꢀtoꢀmalfunction.ꢀForꢀparallelingꢀ4pinꢀMOSFET
devicesꢀtheꢀplacementꢀofꢀtheꢀgateꢀresistorꢀisꢀgenerallyꢀrecommendedꢀtoꢀbe
onꢀtheꢀDriverꢀSourceꢀinsteadꢀofꢀtheꢀGate.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDS @ Tj,max
RDS(on),max
Value
700
80
Unit
V
mΩ
nC
A
Qg,typ
50
ID,pulse
107
7.8
Eoss @ 400V
Body diode diF/dt
µJ
1300
A/µs
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
65R080F7
RelatedꢀLinks
IPT65R080CFD7
PG-HSOF-8
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2022-08-03
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPT65R080CFD7
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2022-08-03
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPT65R080CFD7
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
34
21
TC=25°C
A
Continuous drain current1)
ID
TC=100°C
Pulsed drain current2)
ID,pulse
EAS
EAR
IAS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
107
125
0.63
5.0
A
TC=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, single pulse
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
-
mJ
mJ
A
ID=5.0A; VDD=50V; see table 10
-
ID=5.0A; VDD=50V; see table 10
-
-
dv/dt
VGS
VGS
Ptot
Tstg
Tj
-
120
20
V/ns VDS=0...400V
-20
-30
-
V
static;
30
V
AC (f>1 Hz)
201
150
150
n.a.
34
W
°C
°C
TC=25°C
Storage temperature
-55
-55
-
-
-
Operating junction temperature
Mounting torque
-
Ncm -
Continuous diode forward current1)
Diode pulse current2)
IS
-
A
A
TC=25°C
IS,pulse
-
107
TC=25°C
VDS=0...400V,ꢀISD<=12.5A,ꢀTj=25°Cꢀꢀ
Reverse diode dv/dt3)
dv/dt
-
-
70
V/ns
see table 8
VDS=0...400V,ꢀISD<=12.5A,ꢀTj=25°Cꢀꢀ
Maximum diode commutation speed
Insulation withstand voltage
diF/dt
-
-
-
-
1300 A/µs
n.a.
see table 8
VISO
V
Vrms,ꢀTC=25°C,ꢀt=1min
1) Limited by Tj max
.
2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch with identical RG
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2022-08-03
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPT65R080CFD7
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
0.62
62
Thermal resistance, junction - case
RthJC
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
°C/W device on PCB, minimal footprint
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
Thermal resistance, junction - ambient
for SMD version
layer, 70µm thickness) copper area
for drain connection and cooling.
PCB is vertical without air stream
cooling.
RthJA
-
-
35
-
45
°C/W
Soldering temperature, wave- & reflow
soldering allowed
Tsold
260
°C
reflow MSL1
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2022-08-03
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPT65R080CFD7
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
650
3.5
Typ.
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
V(GS)th
-
V
V
VGS=0V,ꢀID=1mA
4
4.5
VDS=VGS,ꢀID=0.63mA
-
-
-
10
1
39
VDS=650V,ꢀVGS=0V,ꢀTj=25°C
VDS=650V,ꢀVGS=0V,ꢀTj=125°C
Zero gate voltage drain current1)
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
IDSS
µA
nA
Ω
IGSS
-
-
100
VGS=20V,ꢀVDS=0V
-
-
0.067 0.080
0.15
VGS=10V,ꢀID=12.5A,ꢀTj=25°C
VGS=10V,ꢀID=12.5A,ꢀTj=150°C
RDS(on)
RG
-
-
6
-
Ω
f=1MHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
2513
40
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
pF
pF
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
Coss
Effective output capacitance, energy
related2)
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
97
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
VGS=0V,ꢀVDS=0...400V
Effective output capacitance, time
related3)
1022
25
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V
VDD=400V,ꢀVGS=13V,ꢀID=12.5A,
RG=5.3Ω;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
VDD=400V,ꢀVGS=13V,ꢀID=12.5A,
RG=5.3Ω;ꢀseeꢀtableꢀ9
10
VDD=400V,ꢀVGS=13V,ꢀID=12.5A,
RG=5.3Ω;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
td(off)
tf
105
5
VDD=400V,ꢀVGS=13V,ꢀID=12.5A,
RG=5.3Ω;ꢀseeꢀtableꢀ9
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
14
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=400V,ꢀID=12.5A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=12.5A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=12.5A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=12.5A,ꢀVGS=0ꢀtoꢀ10V
Qgd
15
Qg
50
Gate plateau voltage
Vplateau
5.7
1) Maximum specification is defined by calculated six sigma upper confidence bound
2)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
3)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2022-08-03
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPT65R080CFD7
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
1.0
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
Reverse recovery time
VSD
trr
-
-
V
VGS=0V,ꢀIF=12.5A,ꢀTj=25°C
VR=400V,ꢀIF=12.5A,ꢀdiF/dt=100A/µs;
see table 8
-
-
-
132
0.73
9.8
198
1.46
-
ns
VR=400V,ꢀIF=12.5A,ꢀdiF/dt=100A/µs;
see table 8
Reverse recovery charge
Qrr
Irrm
µC
A
VR=400V,ꢀIF=12.5A,ꢀdiF/dt=100A/µs;
see table 8
Peak reverse recovery current
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2022-08-03
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPT65R080CFD7
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
250
103
102
101
200
150
100
50
1 µs
10 µs
100
100 µs
1 ms
10-1
10-2
10-3
10 ms
DC
0
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
100
102
101
0.5
0.2
1 µs
10 µs
100
10-1
0.1
100 µs
1 ms
0.05
10-1
10-2
10-3
0.02
0.01
10 ms
DC
single pulse
10-2
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2022-08-03
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPT65R080CFD7
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
200
125
20 V
20 V
10 V
10 V
100
75
50
25
0
150
8 V
7 V
8 V
100
7 V
6 V
50
5.5 V
6 V
5 V
5.5 V
5 V
4.5 V
4.5 V
0
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
0.240
2.5
0.210
2.0
1.5
1.0
0.5
5.5 V
7 V
6 V
6.5 V
0.180
0.150
0.120
10 V
20 V
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=12.5ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2022-08-03
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPT65R080CFD7
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
200
12
25 °C
10
8
400 V
120 V
150
100
6
150 °C
4
50
2
0
0
0
2
4
6
8
10
12
0
10
20
30
40
50
60
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=12.5ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
102
150
125
100
75
50
25
0
101
25 °C
125 °C
100
10-1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25
50
75
100
125
150
VSDꢀ[V]
Tjꢀ[°C]
IF=f(VSD);ꢀparameter:ꢀTj
EAS=f(Tj);ꢀID=5.0ꢀA;ꢀVDD=50ꢀV
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2022-08-03
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPT65R080CFD7
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
730
105
700
670
640
610
580
104
Ciss
103
102
101
100
Coss
Crss
-50
-25
0
25
50
75
100
125
150
0
100
200
300
400
500
Tjꢀ[°C]
VDSꢀ[V]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
10
8
6
4
2
0
0
100
200
300
400
500
VDSꢀ[V]
Eoss=f(VDS
)
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2022-08-03
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPT65R080CFD7
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimesꢀ(ss)
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀloadꢀ(ss)
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2022-08-03
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPT65R080CFD7
6ꢀꢀꢀꢀꢀPackageꢀOutlines
PACKAGE - GROUP
NUMBER:
PG-HSOF-8-U02
MILLIMETERS
DIMENSIONS
MIN.
2.20
0.70
9.70
0.42
0.40
10.28
MAX.
2.40
0.90
9.90
0.50
0.60
10.58
A
b
b1
b2
c
D
D1
E
3.30
9.70
10.10
E1
E2
E3
e
7.50
8.50
9.46
1.20 (BSC)
H
11.48
11.88
6.95
H1
H2
H3
H4
N
6.55
7.15
3.59
3.26
8
K1
L
4.18
1.40
0.50
0.50
1.00
2.62
1.80
0.90
0.70
1.30
2.81
L1
L2
L3
L4
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-HSOF-8,ꢀdimensionsꢀinꢀmm
Final Data Sheet
12
Rev.ꢀ2.0,ꢀꢀ2022-08-03
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPT65R080CFD7
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSꢀCFD7ꢀ650VꢀWebpage:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀCFD7ꢀ650Vꢀapplicationꢀnote:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀCFD7ꢀ650Vꢀsimulationꢀmodel:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
13
Rev.ꢀ2.0,ꢀꢀ2022-08-03
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPT65R080CFD7
RevisionꢀHistory
IPT65R080CFD7
Revision:ꢀ2022-08-03,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2022-08-03
Trademarks
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intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
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Final Data Sheet
14
Rev.ꢀ2.0,ꢀꢀ2022-08-03
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