IPW80R280P7 [INFINEON]
800V CoolMOS™ P7超结MOSFET系列完全适合低功率SMPS应用，可完全满足性能，易用性和性价比等市场需求。它主要侧重于反激式应用，包括适配器和充电器，LED驱动器，音频SMPS，辅助和工业电源。;
| 型号： | IPW80R280P7 |
| 厂家： | 
Infineon |
| 描述： | 800V CoolMOS™ P7超结MOSFET系列完全适合低功率SMPS应用，可完全满足性能，易用性和性价比等市场需求。它主要侧重于反激式应用，包括适配器和充电器，LED驱动器，音频SMPS，辅助和工业电源。 驱动 驱动器 |
| 文件： | 总13页 (文件大小：930K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPW80R280P7
MOSFET
PG-TOꢀ247-3
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
Theꢀlatestꢀ800VꢀCoolMOS™ꢀP7ꢀseriesꢀsetsꢀaꢀnewꢀbenchmarkꢀinꢀ800V
superꢀjunctionꢀtechnologiesꢀandꢀcombinesꢀbest-in-classꢀperformanceꢀwith
stateꢀofꢀtheꢀartꢀease-of-use,ꢀresultingꢀfromꢀInfineon’sꢀoverꢀ18ꢀyears
pioneeringꢀsuperꢀjunctionꢀtechnologyꢀinnovation.
Features
•ꢀBest-in-classꢀFOMꢀRDS(on)ꢀ*ꢀEoss;ꢀreducedꢀQg,ꢀCiss,ꢀandꢀCoss
•ꢀBest-in-classꢀDPAKꢀRDS(on)
•ꢀBest-in-classꢀV(GS)thꢀofꢀ3VꢀandꢀsmallestꢀꢀV(GS)thꢀvariationꢀofꢀ±0.5V
•ꢀIntegratedꢀZenerꢀDiodeꢀESDꢀprotection
•ꢀFullyꢀqualifiedꢀacc.ꢀJEDECꢀforꢀIndustrialꢀApplications
•ꢀFullyꢀoptimizedꢀportfolio
Drain
Pin 2, Tab
Benefits
•ꢀBest-in-classꢀperformance
Gate
Pin 1
•ꢀEnablingꢀhigherꢀpowerꢀdensityꢀdesigns,ꢀBOMꢀsavingsꢀandꢀlower
assemblyꢀcosts
•ꢀEasyꢀtoꢀdriveꢀandꢀtoꢀparallel
Source
Pin 3
•ꢀBetterꢀproductionꢀyieldꢀbyꢀreducingꢀESDꢀrelatedꢀfailures
•ꢀLessꢀproductionꢀissuesꢀandꢀreducedꢀfieldꢀreturns
•ꢀEasyꢀtoꢀselectꢀrightꢀpartsꢀforꢀfineꢀtuningꢀofꢀdesigns
Potentialꢀapplications
RecommendedꢀforꢀhardꢀandꢀsoftꢀswitchingꢀflybackꢀtopologiesꢀforꢀLED
Lighting,ꢀlowꢀpowerꢀChargersꢀandꢀAdapters,ꢀAudio,ꢀAUXꢀpowerꢀand
Industrialꢀpower.ꢀAlsoꢀsuitableꢀforꢀPFCꢀstageꢀinꢀConsumerꢀapplications
andꢀSolar.
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseperateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDS @ Tj=25°C
RDS(on),max
Qg,typ
Value
800
0.28
36
Unit
V
Ω
nC
A
ID
17
Eoss @ 500V
VGS(th),typ
4
µJ
V
3
ESD class (HBM)
2
-
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPW80R280P7
PG-TO 247-3
80R280P7
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.1,ꢀꢀ2018-02-12
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPW80R280P7
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2018-02-12
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPW80R280P7
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
17
10.6
TC=25°C
A
Continuous drain current1)
ID
TC=100°C
Pulsed drain current2)
ID,pulse
EAS
-
-
-
-
-
-
-
-
-
-
45
A
TC=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
43
mJ
mJ
A
ID=2.2A; VDD=50V
ID=2.2A; VDD=50V
-
EAR
0.36
2.2
100
IAR
dv/dt
V/ns VDS=0ꢀtoꢀ400V
-20
-30
-
-
20
30
static;
V
Gate source voltage
VGS
AC (f>1 Hz)
Power dissipation
Ptot
-
-
-
-
-
-
-
-
101
150
60
12
45
1
W
TC=25°C
Operating and storage temperature
Mounting torque
Tj,ꢀTstg
-
-55
°C
-
-
-
-
-
-
Ncm M3 and M3.5 screws
Continuous diode forward current
Diode pulse current2)
Reverse diode dv/dt3)
IS
A
A
TC=25°C
IS,pulse
dv/dt
TC=25°C
V/ns VDS=0ꢀtoꢀ400V,ꢀISD<=3.6A,ꢀTj=25°C
A/µs VDS=0ꢀtoꢀ400V,ꢀISD<=3.6A,ꢀTj=25°C
Maximum diode commutation speed3) dif/dt
50
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
1.2
Thermal resistance, junction - case
RthJC
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
62
°C/W leaded
Thermal resistance, junction - ambient
for SMD version
RthJA
-
-
-
-
-
°C/W n.a.
Soldering temperature, wavesoldering
only allowed at leads
Tsold
260
°C
1.6 mm (0.063 in.) from case for 10s
1) Limited by Tj max. Maximum duty cycle D=0.5
2) Pulse width tp limited by Tj,max
3)ꢀVDClink=400V;ꢀVDS,peak<V(BR)DSS;ꢀidenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀRG;ꢀꢀtcond<2µs
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2018-02-12
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPW80R280P7
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
800
2.5
Typ.
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
-
V
V
VGS=0V,ꢀID=1mA
3
3.5
VDS=VGS,ꢀID=0.36mA
-
-
-
10
1
-
VDS=800V,ꢀVGS=0V,ꢀTj=25°C
VDS=800V,ꢀVGS=0V,ꢀTj=150°C
Zero gate voltage drain current
IDSS
µA
Gate-source leakage curent incl. zener
diode
IGSS
RDS(on)
RG
-
-
1
µA
VGS=20V,ꢀVDS=0V
-
-
0.24
0.62
0.28
-
VGS=10V,ꢀID=7.2A,ꢀTj=25°C
VGS=10V,ꢀID=7.2A,ꢀTj=150°C
Drain-source on-state resistance
Gate resistance
Ω
Ω
-
1
-
f=250kHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
1200
20
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
pF
pF
VGS=0V,ꢀVDS=500V,ꢀf=250kHz
VGS=0V,ꢀVDS=500V,ꢀf=250kHz
Coss
Effective output capacitance, energy
related1)
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
38
490
10
6
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
VGS=0V,ꢀVDS=0ꢀtoꢀ500V
Effective output capacitance, time
related2)
ID=constant,ꢀVGS=0V,ꢀVDS=0ꢀtoꢀ500V
VDD=400V,ꢀVGS=13V,ꢀID=7.2A,
RG=4.7Ω
Turn-on delay time
Rise time
VDD=400V,ꢀVGS=13V,ꢀID=7.2A,
RG=4.7Ω
VDD=400V,ꢀVGS=13V,ꢀID=7.2A,
RG=4.7Ω
Turn-off delay time
Fall time
td(off)
tf
40
5
VDD=400V,ꢀVGS=13V,ꢀID=7.2A,
RG=4.7Ω
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
5
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=640V,ꢀID=7.2A,ꢀVGS=0ꢀtoꢀ10V
VDD=640V,ꢀID=7.2A,ꢀVGS=0ꢀtoꢀ10V
VDD=640V,ꢀID=7.2A,ꢀVGS=0ꢀtoꢀ10V
VDD=640V,ꢀID=7.2A,ꢀVGS=0ꢀtoꢀ10V
Qgd
15
Qg
36
Gate plateau voltage
Vplateau
4.5
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ500V
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ500V
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2018-02-12
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPW80R280P7
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
0.9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
VSD
trr
-
-
-
-
-
-
-
-
V
VGS=0V,ꢀIF=7.2A,ꢀTf=25°C
Reverse recovery time
1200
15
ns
µC
A
VR=400V,ꢀIF=3.6A,ꢀdiF/dt=50A/µs
VR=400V,ꢀIF=3.6A,ꢀdiF/dt=50A/µs
VR=400V,ꢀIF=3.6A,ꢀdiF/dt=50A/µs
Reverse recovery charge
Peak reverse recovery current
Qrr
Irrm
24
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2018-02-12
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPW80R280P7
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
120
102
10 µs
100 µs
1 ms
1 µs
10 ms
100
80
60
40
20
0
101
100
DC
10-1
10-2
10-3
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
102
101
10 µs
100 µs
1 ms
1 µs
10 ms
101
DC
100
0.5
100
0.2
0.1
0.05
0.02
10-1
10-2
10-3
10-1
0.01
single pulse
10-2
100
101
102
103
10-5
10-4
10-3
10-2
10-1
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2018-02-12
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPW80R280P7
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
60
35
20 V
20 V
10 V
8 V
10 V
8 V
30
25
20
15
10
5
50
40
30
20
10
0
7 V
6 V
7 V
6 V
5.5 V
5 V
5.5 V
4.5 V
5 V
4.5 V
0
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
1.00
0.80
5.5 V
5 V
0.70
0.60
0.50
0.90
0.80
0.70
0.60
0.50
0.40
6 V
6.5 V
7 V
10 V
98%
0.40
typ
0.30
0.20
0.10
0
10
20
30
40
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=7.2ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2018-02-12
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPW80R280P7
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
50
10
25 °C
45
9
8
7
40
35
30
120 V
640 V
6
5
4
3
2
1
0
25
150 °C
20
15
10
5
0
0
2
4
6
8
10
12
0
10
20
30
40
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=7.2ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
102
50
25 °C
125 °C
45
40
35
30
25
20
15
10
5
101
100
10-1
0
0.0
0.5
1.0
1.5
2.0
25
50
75
100
125
150
VSDꢀ[V]
Tjꢀ[°C]
IF=f(VSD);ꢀparameter:ꢀTj
EAS=f(Tj);ꢀID=2.2ꢀA;ꢀVDD=50ꢀV
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2018-02-12
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPW80R280P7
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
950
104
Ciss
900
850
800
750
700
103
102
Coss
101
Crss
100
10-1
-75 -50 -25
0
25
50
75 100 125 150 175
0
100
200
300
400
500
Tjꢀ[°C]
VDSꢀ[V]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
8
7
6
5
4
3
2
1
0
0
100
200
300
400
500
600
700
800
VDSꢀ[V]
Eoss=f(VDS
)
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2018-02-12
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPW80R280P7
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2018-02-12
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPW80R280P7
6ꢀꢀꢀꢀꢀPackageꢀOutlines
MILLIMETERS
DIM
INCHES
MIN
4.83
2.27
1.85
1.07
1.90
1.90
2.87
2.87
0.55
20.80
16.25
0.95
15.70
13.10
3.68
1.00
MAX
5.21
2.54
2.16
1.33
2.41
2.16
3.38
3.13
0.68
21.10
17.65
1.35
16.13
14.15
5.10
2.60
MIN
MAX
A
A1
A2
b
0.190
0.089
0.073
0.042
0.075
0.075
0.113
0.113
0.022
0.819
0.640
0.037
0.618
0.516
0.145
0.039
0.205
0.100
0.085
0.052
0.095
0.085
0.133
0.123
0.027
0.831
0.695
0.053
0.635
0.557
0.201
0.102
DOCUMENT NO.
Z8B00003327
0
SCALE
b1
b2
b3
b4
c
5
0
5
D
7.5mm
D1
D2
E
EUROPEAN PROJECTION
E1
E2
E3
e
5.44 (BSC)
0.214 (BSC)
3
N
3
ISSUE DATE
09-07-2010
L
19.80
4.10
3.50
5.49
6.04
20.32
4.47
3.70
6.00
6.30
0.780
0.161
0.138
0.216
0.238
0.800
L1
¡3
Q
0.176
0.146
0.236
0.248
REVISION
05
S
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ247-3,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2018-02-12
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPW80R280P7
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSꢀWebpage:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
12
Rev.ꢀ2.1,ꢀꢀ2018-02-12
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPW80R280P7
RevisionꢀHistory
IPW80R280P7
Revision:ꢀ2018-02-12,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
Release of final version
Corrected front page text
2016-07-05
2018-02-12
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.
TrademarksꢀupdatedꢀAugustꢀ2015
OtherꢀTrademarks
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failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
13
Rev.ꢀ2.1,ꢀꢀ2018-02-12
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