IPW90R1K0C3FKSA1 [INFINEON]
Power Field-Effect Transistor, 5.7A I(D), 900V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, GREEN, PLASTIC, TO-247, 3 PIN;
| 型号： | IPW90R1K0C3FKSA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 5.7A I(D), 900V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, GREEN, PLASTIC, TO-247, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：548K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPW90R1K0C3
CoolMOS™ Power Transistor
Features
Product Summary
V
R
DS @ T J=25°C
900
1.0
34
V
• Lowest figure-of-merit RON x Qg
• Extreme dv/dt rated
DS(on),max @ T J= 25°C
Ω
Q g,typ
nC
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
PG-TO247
CoolMOS™ 900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• PC Silverbox and consumer applications
• Industrial SMPS
Type
Package
Marking
IPW90R1K0C3
PG-TO247
9R1K0C
Maximum ratings, at T J=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T C=25 °C
T C=100 °C
T C=25 °C
5.7
3.6
Continuous drain current
A
Pulsed drain current 2)
12
I D,pulse
E AS
I D=1.1 A, V DD=50 V
I D=1.1 A, V DD=50 V
Avalanche energy, single pulse
Avalanche energy, repetitive t AR
Avalanche current, repetitive t AR
MOSFET dv /dt ruggedness
Gate source voltage
97
mJ
2),3)
2),3)
E AR
0.37
1.1
I AR
A
V
DS=0...400 V
50
dv /dt
V GS
V/ns
V
±20
±30
89
static
AC (f>1 Hz)
T C=25 °C
P tot
Power dissipation
W
T J, T stg
-55 ... 150
60
Operating and storage temperature
Mounting torque
°C
M3 and M3.5 screws
page 1
Ncm
Rev. 1.0
2008-07-29
Please note the new package dimensions arccording to PCN 2009-134-A
IPW90R1K0C3
Maximum ratings, at T J=25 °C, unless otherwise specified
Value
3.3
13
Parameter
Symbol Conditions
Unit
I S
Continuous diode forward current
Diode pulse current 2)
A
T C=25 °C
I S,pulse
4)
dv /dt
4
V/ns
Reverse diode dv /dt
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
1.4
62
K/W
Thermal resistance, junction -
ambient
R thJA
leaded
Soldering temperature,
wavesoldering only allowed at leads
1.6 mm (0.063 in.)
from case for 10 s
T sold
-
-
260 °C
Electrical characteristics, at T J=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=250 µA
DS=V GS, I D=0.37 mA
Drain-source breakdown voltage
Gate threshold voltage
900
2.5
-
-
V
3
3.5
V
DS=900 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
-
1
-
µA
T j=25 °C
V
DS=900 V, V GS=0 V,
-
-
-
10
-
T j=150 °C
I GSS
V
V
GS=20 V, V DS=0 V
GS=10 V, I D=3.3 A,
Gate-source leakage current
100 nA
R DS(on)
Drain-source on-state resistance
0.78
1
Ω
T j=25 °C
V
GS=10 V, I D=3.3 A,
-
-
2.1
1.3
-
-
T j=150 °C
R G
Gate resistance
f =1 MHz, open drain
Ω
Rev. 1.0
page 2
2008-07-29
Please note the new package dimensions arccording to PCN 2009-134-A
IPW90R1K0C3
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
C iss
Input capacitance
Output capacitance
-
-
850
42
-
-
pF
V
GS=0 V, V DS=100 V,
f =1 MHz
C oss
Effective output capacitance, energy
related 5)
C o(er)
-
-
28
-
-
V
GS=0 V, V DS=0 V
to 500 V
Effective output capacitance, time
related 6)
C o(tr)
100
t d(on)
t r
t d(off)
t f
Turn-on delay time
Rise time
-
-
-
-
70
20
-
-
-
-
ns
V
V
DD=400 V,
GS=10 V, I D=3.3 A,
Turn-off delay time
Fall time
400
35
R G=62.4 Ω
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
4
-
-
nC
Q gd
15
34
4.6
V
V
DD=400 V, I D=3.3 A,
GS=0 to 10 V
Q g
tbd
-
V plateau
Gate plateau voltage
V
V
Reverse Diode
V
GS=0 V, I F=3.3 A,
V SD
Diode forward voltage
-
0.8
1.2
T j=25 °C
t rr
Reverse recovery time
-
-
-
340
4.1
21
-
-
-
ns
µC
A
V R=400 V, I F=I S,
di F/dt =100 A/µs
Q rr
I rrm
Reverse recovery charge
Peak reverse recovery current
1) J-STD20 and JESD22
2) Pulse width t p limited by T J,max
3) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.
4) ISD≤ID, di/dt≤ 200 A/µs, VDClink=400V, Vpeak<V(BR)DSS, TJ<TJ,max, identical low side and high side switch
5) C o(er) is a fixed capacitance that gives the same stored energy asC oss while V DS is rising from 0 to 50% V DSS.
6) C o(tr) is a fixed capacitance that gives the same charging time asC oss while V DS is rising from 0 to 50% V DSS.
Rev. 1.0
page 3
2008-07-29
Please note the new package dimensions arccording to PCN 2009-134-A
IPW90R1K0C3
1 Power dissipation
2 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
P
tot=f(T C)
102
90
80
70
60
50
40
30
20
10
limited by on-state
resistance
101
1 µs
10 µs
100 µs
1 ms
10 ms
100
DC
10-1
0
0
25
50
75
100
125
150
1
10
100
1000
V
DS [V]
T
C [°C]
3 Max. transient thermal impedance
thJC=f(tP)
4 Typ. output characteristics
I D=f(V DS); T J=25 °C
parameter: V GS
Z
parameter: D=t p/T
101
20
15
10
5
20 V
10 V
8 V
100
6 V
0.5
5.5 V
0.2
0.1
0.05
10-1
0.02
5 V
0.01
single pulse
4.5 V
4 V
10-2
0
10-5
10-4
10-3
10-2
10-1
0
5
10
15
20
25
t
p [s]
V DS [V]
Rev. 1.0
page 4
2008-07-29
Please note the new package dimensions arccording to PCN 2009-134-A
IPW90R1K0C3
5 Typ. output characteristics
I D=f(V DS); T J=150 °C
parameter: V GS
6 Typ. drain-source on-state resistance
DS(on)=f(I D); T J=150 °C
R
parameter: V GS
8
6
4
2
0
10
20 V
6 V
10 V
8 V
5.5 V
8
6
4
5 V
4.5 V
10 V
5 V
4.8 V
4 V
4.5 V
4 V
2
0
0
5
10
15
DS [V]
20
25
0
2
4
6
8
10
12
V
I
D [A]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
I D=f(V GS); V DS≥20V
parameter: T J
R
DS(on)=f(T J); I D=3.3 A; V GS=10 V
3
2.5
2
20
15
10
5
25 °C
1.5
98 %
150 °C
1
typ
0.5
0
0
-60
-20
20
60
100
140
180
0
2
4
6
8
10
T j [°C]
V GS [V]
Rev. 1.0
page 5
2008-07-29
Please note the new package dimensions arccording to PCN 2009-134-A
IPW90R1K0C3
9 Typ. gate charge
GS=f(Q gate); I D=3.3 A pulsed
10 Forward characteristics of reverse diode
I F=f(V SD
V
)
parameter: V DD
parameter: T J
102
10
8
6
4
2
25 °C, 98%
150 °C, 98%
101
400 V
720 V
25 °C
150 °C
100
10-1
0
0
0
10
20
30
40
0.5
1
1.5
2
Q
gate [nC]
V
SD [V]
11 Avalanche energy
12 Drain-source breakdown voltage
E
AS=f(T j); I D=1.1 A; V DD=50 V
V
BR(DSS)=f(T j); I D=0.25 mA
100
1050
80
60
40
20
0
1000
950
900
850
800
25
50
75
100
J [°C]
125
150
-60
-20
20
60
100
140
180
T
T
J [°C]
Rev. 1.0
page 6
2008-07-29
Please note the new package dimensions arccording to PCN 2009-134-A
IPW90R1K0C3
13 Typ. capacitances
14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz
E oss= f(V DS)
10000
5
4
3
2
1
Ciss
1000
100
Coss
10
Crss
1
0
0
0
100
200
300
400
500
600
100
200
300
400
500
600
V
DS [V]
V
DS [V]
Rev. 1.0
page 7
2008-07-29
Please note the new package dimensions arccording to PCN 2009-134-A
IPW90R1K0C3
Definition of diode switching characteristics
Rev. 1.0
page 8
2008-07-29
Please note the new package dimensions arccording to PCN 2009-134-A
IPW90R1K0C3
PG-TO247 Outlines
Dimensions in mm/inches
Rev. 1.0
page 9
2008-07-29
Please note the new package dimensions arccording to PCN 2009-134-A
IPW90R1K0C3
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 1.0
page 10
2008-07-29
Please note the new package dimensions arccording to PCN 2009-134-A
Data sheet erratum
PCN 2009-134-A
New package outlines TO-247
1
New package outlines TO-247
Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package
PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.)
Figure 1
Outlines TO-247, dimensions in mm/inches
Final Data Sheet Erratum
Rev. 2.0, 2010-02-01
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