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IPW90R1K2C3 [INFINEON]

CoolMOS? Power Transistor; 的CoolMOS ™功率晶体管
IPW90R1K2C3
型号： IPW90R1K2C3
厂家： Infineon    Infineon
描述：

CoolMOS? Power Transistor
的CoolMOS ™功率晶体管

晶体 晶体管
文件： 总11页 (文件大小：554K)
中文：  中文翻译
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IPW90R1K2C3  
CoolMOS™ Power Transistor  
Features  
Product Summary  
V
R
DS @ T J=25°C  
900  
1.2  
28  
V
• Lowest figure-of-merit RON x Qg  
• Extreme dv/dt rated  
DS(on),max @T J=25°C  
Ω
Q g,typ  
nC  
• High peak current capability  
• Qualified according to JEDEC1) for target applications  
• Pb-free lead plating; RoHS compliant  
• Ultra low gate charge  
PG-TO247  
CoolMOS™ 900V is designed for:  
• Quasi Resonant Flyback / Forward topologies  
• PC Silverbox and consumer applications  
• Industrial SMPS  
Type  
Package  
Marking  
IPW90R1K2C3  
PG-TO247  
9R1K2C  
Maximum ratings, at T J=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
T C=100 °C  
T C=25 °C  
5.1  
3.2  
Continuous drain current  
A
Pulsed drain current 2)  
10  
I D,pulse  
E AS  
I D=0.92 A, V DD=50 V  
I D=0.92 A, V DD=50 V  
Avalanche energy, single pulse  
Avalanche energy, repetitive t AR  
Avalanche current, repetitive t AR  
MOSFET dv /dt ruggedness  
Gate source voltage  
68  
mJ  
2),3)  
2),3)  
E AR  
0.31  
0.92  
50  
I AR  
A
V
DS=0...400 V  
dv /dt  
V GS  
V/ns  
V
±20  
±30  
83  
static  
AC (f>1 Hz)  
T C=25 °C  
P tot  
Power dissipation  
W
T J, T stg  
-55 ... 150  
60  
Operating and storage temperature  
Mounting torque  
°C  
M3 and M3.5 screws  
page 1  
Ncm  
Rev. 1.0  
2008-07-30  
Please note the new package dimensions arccording to PCN 2009-134-A  
IPW90R1K2C3  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I S  
2.8  
Continuous diode forward current  
A
T C=25 °C  
Diode pulse current 2)  
Reverse diode dv/dt 4)  
I S,pulse  
dv/dt  
11  
4
V/ns  
Values  
typ.  
Parameter  
Symbol Conditions  
Unit  
min.  
max.  
Thermal characteristics  
R thJC  
Thermal resistance, junction - case  
-
-
-
-
1.5  
62  
K/W  
Thermal resistance, junction -  
ambient  
R thJA  
leaded  
Soldering temperature,  
wavesoldering only allowed at leads  
1.6 mm (0.063 in.)  
from case for 10 s  
T sold  
-
-
260 °C  
Electrical characteristics, at T J=25 °C, unless otherwise specified  
Static characteristics  
V (BR)DSS  
V GS(th)  
V
V
GS=0 V, I D=250 µA  
DS=V GS, I D=0.31 mA  
Drain-source breakdown voltage  
Gate threshold voltage  
900  
2.5  
-
-
V
3
3.5  
V
DS=900 V, V GS=0 V,  
I DSS  
Zero gate voltage drain current  
-
-
1
-
µA  
T j=25 °C  
V
DS=900 V, V GS=0 V,  
-
-
-
10  
-
T j=150 °C  
I GSS  
V
V
GS=20 V, V DS=0 V  
GS=10 V, I D=2.8 A,  
Gate-source leakage current  
100 nA  
R DS(on)  
Drain-source on-state resistance  
0.94  
1.2  
Ω
T j=25 °C  
V
GS=10 V, I D=2.8 A,  
-
-
2.5  
1.3  
-
-
T j=150 °C  
R G  
Gate resistance  
f =1 MHz, open drain  
Ω
Rev. 1.0  
page 2  
2008-07-30  
Please note the new package dimensions arccording to PCN 2009-134-A  
IPW90R1K2C3  
Values  
typ.  
Parameter  
Symbol Conditions  
Unit  
min.  
max.  
Dynamic characteristics  
C iss  
Input capacitance  
Output capacitance  
-
-
710  
35  
-
-
pF  
V
GS=0 V, V DS=100 V,  
f =1 MHz  
C oss  
Effective output capacitance, energy  
related 5)  
C o(er)  
-
-
23  
86  
-
-
V
GS=0 V, V DS=0 V  
to 500 V  
Effective output capacitance, time  
related 6)  
C o(tr)  
t d(on)  
t r  
t d(off)  
t f  
Turn-on delay time  
Rise time  
-
-
-
-
70  
20  
-
-
-
-
ns  
V
V
DD=400 V,  
GS=10 V, I D=2.8 A,  
Turn-off delay time  
Fall time  
400  
40  
R G=81.3 Ω  
Gate Charge Characteristics  
Gate to source charge  
Gate to drain charge  
Gate charge total  
Q gs  
-
-
-
-
3.2  
12  
-
-
nC  
Q gd  
V
V
DD=400 V, I D=2.8 A,  
GS=0 to 10 V  
Q g  
28  
tbd  
-
V plateau  
Gate plateau voltage  
4.6  
V
V
Reverse Diode  
V
GS=0 V, I F=2.8 A,  
V SD  
Diode forward voltage  
-
0.8  
1.2  
T j=25 °C  
t rr  
Reverse recovery time  
-
-
-
310  
3.7  
19  
-
-
-
ns  
µC  
A
V R=400 V, I F=I S,  
di F/dt =100 A/µs  
Q rr  
I rrm  
Reverse recovery charge  
Peak reverse recovery current  
1) J-STD20 and JESD22  
2) Pulse width t p limited by T J,max  
3) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.  
4) ISD≤ID, di/dt≤200A/µs, VDClink=400V, Vpeak<V(BR)DSS, TJ<TJ,max, identical low side and high side switch  
5)  
C
o(er)  
is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 50% VDSS.  
6) C o(tr) is a fixed capacitance that gives the same charging time asC oss while V DS is rising from 0 to 50% V DSS.  
Rev. 1.0  
page 3  
2008-07-30  
Please note the new package dimensions arccording to PCN 2009-134-A  
IPW90R1K2C3  
1 Power dissipation  
2 Safe operating area  
I D=f(V DS); T C=25 °C; D =0  
parameter: t p  
P
tot=f(T C)  
102  
90  
80  
70  
60  
50  
40  
30  
20  
10  
limited by on-state  
resistance  
101  
10 µs 1 µs  
100 µs  
10 ms  
1 ms  
DC  
100  
10-1  
0
0
1
10  
100  
1000  
25  
50  
75  
100  
125  
150  
V
DS [V]  
T
C [°C]  
3 Max. transient thermal impedance  
thJC=f(tP)  
4 Typ. output characteristics  
I D=f(V DS); T J=25 °C  
parameter: V GS  
Z
parameter: D=t p/T  
101  
15  
10  
5
20 V  
10 V  
8 V  
6 V  
100  
0.5  
5.5 V  
0.2  
0.1  
0.05  
5 V  
0.02  
0.01  
10-1  
single pulse  
4.5 V  
4 V  
10-2  
0
10-5  
10-4  
10-3  
10-2  
10-1  
0
5
10  
15  
20  
25  
t
p [s]  
V DS [V]  
Rev. 1.0  
page 4  
2008-07-30  
Please note the new package dimensions arccording to PCN 2009-134-A  
IPW90R1K2C3  
5 Typ. output characteristics  
I D=f(V DS); T J=150 °C  
parameter: V GS  
6 Typ. drain-source on-state resistance  
DS(on)=f(I D); T J=150 °C  
R
parameter: V GS  
7
6
5
4
3
2
1
0
14  
12  
10  
8
20 V  
10 V  
5 V  
8 V  
6 V  
5.5 V  
4.5 V  
10 V  
6
5 V  
4 V  
4.8 V  
4
4.5 V  
4 V  
2
0
0
5
10  
15  
DS [V]  
20  
25  
0
2
4
6
8
10  
V
I
D [A]  
7 Drain-source on-state resistance  
8 Typ. transfer characteristics  
I D=f(V GS); V DS=20V  
parameter: T J  
R
DS(on)=f(T J); I D=2.8 A; V GS=10 V  
3.5  
3
15  
10  
5
25 °C  
2.5  
2
1.5  
98 %  
150 °C  
typ  
1
0.5  
0
0
-60  
-20  
20  
60  
100  
140  
180  
0
2
4
6
8
10  
T j [°C]  
V GS [V]  
Rev. 1.0  
page 5  
2008-07-30  
Please note the new package dimensions arccording to PCN 2009-134-A  
IPW90R1K2C3  
9 Typ. gate charge  
GS=f(Q gate); I D=2.8 A pulsed  
10 Forward characteristics of reverse diode  
I F=f(V SD  
V
)
parameter: V DD  
parameter: T J  
102  
10  
25 °C, 98%  
8
6
4
2
150 °C, 98%  
101  
400 V  
720 V  
25 °C  
150 °C  
100  
10-1  
0
0
0
10  
20  
30  
0.5  
1
1.5  
2
Q
gate [nC]  
V
SD [V]  
11 Avalanche energy  
12 Drain-source breakdown voltage  
E
AS=f(T j); I D=0.92 A; V DD=50 V  
V
BR(DSS)=f(T j); I D=0.25 mA  
70  
60  
50  
40  
30  
20  
10  
0
1050  
1000  
950  
900  
850  
800  
25  
50  
75  
100  
J [°C]  
125  
150  
-60  
-20  
20  
60  
100  
140  
180  
T
T
J [°C]  
Rev. 1.0  
page 6  
2008-07-30  
Please note the new package dimensions arccording to PCN 2009-134-A  
IPW90R1K2C3  
13 Typ. capacitances  
14 Typ. Coss stored energy  
C =f(V DS); V GS=0 V; f =1 MHz  
E oss= f(V DS)  
4
10000  
Ciss  
3
2
1
1000  
100  
10  
Coss  
Crss  
0
0
1
100  
200  
300  
400  
500  
600  
0
100  
200  
300  
400  
500  
600  
V
DS [V]  
V
DS [V]  
Rev. 1.0  
page 7  
2008-07-30  
Please note the new package dimensions arccording to PCN 2009-134-A  
IPW90R1K2C3  
Definition of diode switching characteristics  
Rev. 1.0  
page 8  
2008-07-30  
Please note the new package dimensions arccording to PCN 2009-134-A  
IPW90R1K2C3  
PG-TO247 Outlines  
Dimensions in mm/inches  
Rev. 1.0  
page 9  
2008-07-30  
Please note the new package dimensions arccording to PCN 2009-134-A  
IPW90R1K2C3  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
© 2008 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of  
conditions or characteristics. With respect to any examples or hints given herein, any typical  
values stated herein and/or any information regarding the application of the device,  
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,  
including without limitation, warranties of non-infringement of intellectual property rights  
of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices, please  
contact the nearest Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements, components may contain dangerous substances. For information  
on the types in question, please contact the nearest Infineon Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems only with  
the express written approval of Infineon Technologies, if a failure of such components can  
reasonably be expected to cause the failure of that life-support device or system or to affect  
the safety or effectiveness of that device or system. Life support devices or systems are  
intended to be implanted in the human body or to support and/or maintain and sustain  
and/or protect human life. If they fail, it is reasonable to assume that the health of the user  
or other persons may be endangered.  
Rev. 1.0  
page 10  
2008-07-30  
Please note the new package dimensions arccording to PCN 2009-134-A  
Data sheet erratum  
PCN 2009-134-A  
New package outlines TO-247  
1
New package outlines TO-247  
Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package  
PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.)  
Figure 1  
Outlines TO-247, dimensions in mm/inches  
Final Data Sheet Erratum  
Rev. 2.0, 2010-02-01  

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