IR2155PBF [INFINEON]
Half Bridge Based MOSFET Driver, 0.5A, CMOS, PDIP8, LEAD FREE, PLASTIC, DIP-8;
| 型号： | IR2155PBF |
| 厂家： | 
Infineon |
| 描述： | Half Bridge Based MOSFET Driver, 0.5A, CMOS, PDIP8, LEAD FREE, PLASTIC, DIP-8 驱动 光电二极管 接口集成电路 驱动器 |
| 文件： | 总7页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet No. PD60029 revJ
IR2155&(PbF)
(NOTE: For new designs, we recommend IR’s new products
IR2153 and IR21531)
Features SELF-OSCILLATING HALF-BRIDGE DRIVER
Product Summary
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Undervoltage lockout
•
V
600V max.
50%
OFFSET
Duty Cycle
•
•
Programmable oscillator frequency
I +/-
O
210 mA / 420 mA
10 - 20V
1
f =
V
OUT
1.4×(RT +150Ω)× CT
Matched propagation delay for both channels
Micropower supply startup current of 125 µA typ.
Low side output in phase with RT
• Available in Lead-Free
Description
•
•
•
Deadtime (typ.)
1.2 µs
Package
The IR2155 is a high voltage, high speed, self-
oscillating power MOSFET and IGBT driver with both
high and low side referenced output channels. Pro-
prietary HVIC and latch immune CMOS technolo-
gies enable ruggedized monolithic construction.
The front end features a programmable oscillator
which is similar to the 555 timer. The output drivers
feature a high pulse current buffer stage and an in-
ternal deadtime designed for minimum driver cross-
conduction. Propagation delays for the two
channels are matched to simplify use in 50% duty
cycle applications. The floating channel can be
used to drive an N-channel power
8 Lead PDIP
MOSFET or IGBT in the high side configuration that
operates off a high voltage rail up to 600 volts.
Typical Connection
up to 600V
VCC
RT
VB
HO
VS
TO
LOAD
CT
COM
LO
(Refer to Lead Assignment diagram for correct pin configuration)
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1
IR2155&(PbF)
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured
under board mounted and still air conditions.
Parameter
Definition
Value
Symbol
Min.
Max.
Units
V
High Side Floating Supply Voltage
High Side Floating Supply Offset Voltage
High Side Floating Output Voltage
Low Side Output Voltage
-0.3
625
B
S
V
V
- 25
V
+ 0.3
+ 0.3
+ 0.3
+ 0.3
B
B
B
V
HO
V
- 0.3
S
V
V
V
V
V
-0.3
-0.3
-0.3
—
V
V
LO
RT
CT
CC
CC
CC
R Voltage
T
C Voltage
T
V
+ 0.3
CC
I
Supply Current (Note 1)
25
mA
V/ns
W
I
R
Output Current
-5
5
50
RT
T
dV /dt
s
Allowable Offset Supply Voltage Transient
—
P
D
Package Power Dissipation @ T ≤ +25°C
(8 Lead DIP)
(8 Lead SOIC)
(8 Lead DIP)
(8 Lead SOIC)
—
1.0
A
—
0.625
125
200
150
150
300
R
Thermal Resistance, Junction to Ambient
—
θJA
°C/W
°C
—
T
Junction Temperature
—
J
T
Storage Temperature
-55
—
S
T
Lead Temperature (Soldering, 10 seconds)
L
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The V offset rating is tested with all supplies biased at 15V differential.
S
Parameter
Definition
Value
Symbol
Min.
Max.
Units
V
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Floating Output Voltage
Low Side Output Voltage
V
+ 10
V + 20
S
B
S
S
V
—
600
V
V
HO
V
V
B
S
V
0
V
CC
LO
CC
I
Supply Current (Note 1)
—
5
mA
T
A
Ambient Temperature
-40
125
°C
Note 1:
Because of the IR2155’s application specificity toward off-line supply systems, this IC contains a zener clamp
structure between the chip V and COM which has a nominal breakdown voltage of 15.6V. Therefore, the IC
CC
supply voltage is normally derived by forcing current into the supply lead (typically by means of a high value
resistor connected between the chip V and the rectified line voltage and a local decoupling capacitor from
CC
V
to COM) and allowing the internal zener clamp circuit to determine the nominal supply voltage. There-
CC
fore, this circuit should not be driven by a DC, low impedance power source of greater than V
.
CLAMP
2
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IR2155&(PbF)
Dynamic Electrical Characteristics
V
(V , V ) = 12V, C = 1000 pF and T = 25°C unless otherwise specified.
BIAS CC BS L A
Parameter
Definition
Value
Min. Typ. Max. Units Test Conditions
Symbol
t
t
Turn-On Rise Time
Turn-Off Fall Time
Deadtime
—
—
80
40
120
70
r
ns
r
DT
D
0.50
48
1.20 2.25
50 52
µs
%
R Duty Cycle
T
Static Electrical Characteristics
V
(V , V ) = 12V, C = 1000 pF, C = 1 nF and T = 25°C unless otherwise specified. The V , V and I
BIAS CC BS L T A IN TH IN
parameters are referenced to COM. The V and I parameters are referenced to COM and are applicable to the
O
O
respective output leads: HO or LO.
Parameter
Definition
Value
Min. Typ. Max. Units Test Conditions
Symbol
f
Oscillator Frequency
19.4
94
14.4
7.8
3.8
—
20.0
100
15.6
8.0
4.0
20
20.6
106
16.8
8.2
R = 35.7 kΩ
OSC
T
kHz
R = 7.04 kΩ
T
V
V
CC
Zener Shunt Clamp Voltage
I
= 5 mA
CC
CLAMP
V
V
2/3 V Threshold
CC
V
CT+
1/3 V Threshold
4.2
CT-
CC
V
CTUV
C Undervoltage Lockout
T
50
2.5V < V < V
CC CCUV
V
R High Level Output Voltage, V - R
—
—
0
200
20
200
0
100
300
50
300
100
100
100
50
I
= -100 µA
RT+
T
CC
T
RT
I
= -1 mA
RT
V
R Low Level Output Voltage
T
—
—
I = 100 µA
RT
RT-
mV
I
= 1 mA
RT
V
RTUV
RT Undervoltage Lockout, V - R
—
2.5V < V < V
CC CCUV
CC
T
V
High Level Output Voltage, V
- V
—
—
I
I
= 0A
= 0A
OH
BIAS
O
O
O
V
Low Level Output Voltage, V
—
—
OL
O
I
Offset Supply Leakage Current
Quiescent V Supply Current
—
—
V = V = 600V
B S
LK
I
—
—
70
55
150
125
1000
150
1.0
QBS
BS
I
Micropower V Supply Startup Current
QBSUV
BS
µA
I
Quiescent V Supply Current
—
500
70
QCC
CC
I
Micropower V Supply Startup Current
—
QCCUV
CC
I
C Input Current
T
—
0.001
8.4
CT
V
V
BS
Supply Undervoltage Positive Going
7.7
9.2
BSUV+
Threshold
Supply Undervoltage Negative Going
Threshold
V
mV
V
V
V
BS
7.3
8.1
8.9
BSUV-
V
V
V
V
Supply Undervoltage Lockout Hysteresis
Supply Undervoltage Positive Going
100
7.7
400
8.4
—
BSUVH
BS
9.2
CCUV+
CC
Threshold
Supply Undervoltage Negative Going
V
CCUV-
V
CC
7.4
8.1
8.9
Threshold
Supply Undervoltage Lockout Hysteresis
V
V
CC
200
210
420
400
250
500
—
—
—
mV
mA
CCUVH
I
O+
Output High Short Circuit Pulsed Current
Output Low Short Circuit Pulsed Current
V
O
= 0V
I
V
O
= 15V
O-
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3
IR2155&(PbF)
Functional Block Diagram
VB
UV
R
DETECT
Q
R
R
S
HV
LEVEL
SHIFT
HO
PULSE
FILTER
RT
-
R
S
Q
Q
PULSE
GEN
DEAD
TIME
VS
+
R
VCC
15.6V
-
CT
+
DEAD
TIME
LO
DELAY
UV
DETECT
R
COM
Lead Definitions
Lead
Symbol Description
R
T
Oscillator timing resistor input,in phase with LO for normal IC operation
C
T
Oscillator timing capacitor input, the oscillator frequency according to the following equation:
1
f =
1.4×(RT +150Ω)× CT
where 150Ω is the effective impedance of the R output stage
T
V
High side floating supply
High side gate drive output
High side floating supply return
Low side and logic fixed supply
Low side gate drive output
Low side return
B
HO
V
V
S
CC
LO
COM
Lead Assignments
8 Lead DIP
IR2155
4
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IR2155&(PbF)
8 Lead PDIP
01-3003 01
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5
IR2155&(PbF)
VCLAMP
VCCUV
+
VCC
RT (HO)
RT (LO)
50%
50%
t
RT
CT
t
f
r
HO
LO
90%
90%
LO
HO
10%
10%
Figure 1. Input/Output Timing Diagram
Figure 2. Switching Time Waveform Definitions
RT
50%
50%
90%
10%
HO
LO
DT
90%
10%
Figure 3. Deadtime Waveform Definitions
6
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IR2155&(PbF)
ORDER INFORMATION
Lead-Free Part
8-Lead PDIP IR2155
Basic Part (Non-Lead Free)
8-Lead PDIP IR2155 order IR2155
order IR2155PbF
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web Site.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
09/08/04
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7
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