IR2183STR [INFINEON]
MOSFET Driver, CMOS, PDSO8;
| 型号： | IR2183STR |
| 厂家： | 
Infineon |
| 描述： | MOSFET Driver, CMOS, PDSO8 光电二极管 |
| 文件： | 总8页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet No. PD60173-E
( ) ( )
S
IR2183 4
HALF-BRIDGE DRIVER
Features
Packages
Floating channel designed for bootstrap operation
•
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
14-Lead PDIP
IR21834
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V and 5V input logic compatible
Matched propagation delay for both channels
Logic and power ground +/- 5V offset.
Lower di/dt gate driver for better noise immunity
Output source/sink current capability 1.4A/1.8A
•
8-Lead SOIC
IR2183S
•
•
•
•
8-Lead PDIP
IR2183
•
14-Lead SOIC
IR21834S
•
Description
The IR2183(4)(S) are high voltage,
IR2181/IR2183/IR2184 Feature Comparison
Cross-
high speed power MOSFET and IGBT
drivers with dependent high and low
side referenced output channels. Pro-
prietary HVIC and latch immune
CMOS technologies enable rugge-
dized monolithic construction. The
logic input is compatible with standard
CMOS or LSTTL output, down to 3.3V
logic. The output drivers feature a high
Input
logic
conduction
prevention
logic
Part
Dead-Time
Ground Pins
Ton/Toff
2181
21814
2183
COM
VSS/COM
COM
HIN/LIN
HIN/LIN
IN/SD
no
none
180/220 ns
180/220 ns
680/270 ns
Internal 500ns
Program 0.4 ~ 5 us
Internal 500ns
yes
yes
21834
2184
VSS/COM
COM
21844
Program 0.4 ~ 5 us
VSS/COM
pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to
drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Typical Connection
up to 600V
VCC
VCC
HIN
LIN
VB
HO
VS
HIN
LIN
TO
LOAD
COM
LO
up to 600V
IR2183
IR21834
HO
VB
VS
VCC
VCC
HIN
LIN
HIN
LIN
DT
TO
LOAD
(Refer to Lead Assignment for correct pin
configuration) This/These diagram(s) show
electrical connections only. Please refer to our
Application Notes and DesignTips for proper circuit
board layout.
VSS
COM
LO
VSS
RDT
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IR2183 4
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
Symbol
Definition
High side floating absolute voltage
High side floating supply offset voltage
High side floating output voltage
Min.
Max.
Units
V
-0.3
625
B
S
V
V
B
- 25
V
+ 0.3
+ 0.3
25
B
V
HO
V
CC
V
S
- 0.3
V
B
Low side and logic fixed supply voltage
Low side output voltage
-0.3
-0.3
V
V
LO
V
V
+ 0.3
+ 0.3
+ 10
CC
DT
Programmable dead-time pin voltage (IR21834 only)
Logic input voltage (HIN & LIN)
V
- 0.3
SS
SS
CC
CC
V
IN
V
V
- 0.3
- 25
V
SS
V
SS
Logic ground (IR21834 only)
V
+ 0.3
CC
dV /dt
Allowable offset supply voltage transient
—
50
V/ns
W
S
P
D
Package power dissipation @ T ≤ +25°C
(8-lead PDIP)
(8-lead SOIC)
(14-lead PDIP)
(14-lead SOIC)
(8-lead PDIP)
(8-lead SOIC)
(14-lead PDIP)
(14-lead SOIC)
—
—
—
—
—
—
—
—
—
-50
—
1.0
0.625
1.6
A
1.0
Rth
Thermal resistance, junction to ambient
125
200
75
JA
°C/W
°C
120
150
150
300
T
T
Junction temperature
J
Storage temperature
S
T
Lead temperature (soldering, 10 seconds)
L
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The V and V offset rating are tested with all supplies biased at 15V differential.
S
SS
Symbol
Definition
Min.
Max.
Units
VB
High side floating supply absolute voltage
High side floating supply offset voltage
High side floating output voltage
Low side and logic fixed supply voltage
Low side output voltage
V
+ 10
V
S
+ 20
S
V
Note 1
600
S
V
HO
V
V
B
S
V
CC
10
0
20
V
V
V
CC
LO
V
Logic input voltage (HIN &
)
V
V
+ 5
LIN
IN
SS
SS
SS
DT
Programmable dead-time pin voltage (IR21834 only)
Logic ground (IR21834 only)
V
V
CC
V
-5
5
SS
T
A
Ambient temperature
-40
125
°C
Note 1: Logic operational for V of -5 to +600V. Logic state held for V of -5V to -V . (Please refer to the Design Tip
S
S
BS
DT97-3 for more details).
Note 2: HIN and LIN pins are internally clamped with a 5.2V zener diode.
2
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IR2183 4
Dynamic Electrical Characteristics
V
(V , V ) = 15V, V = COM, C = 1000 pF, T = 25°C, DT = VSS unless otherwise specified.
BIAS CC BS
L
A
SS
Symbol
Definition
Min. Typ. Max. Units Test Conditions
t
Turn-on propagation delay
—
—
—
—
—
180
220
0
270
330
35
V = 0V
S
on
off
t
Turn-off propagation delay
V
S
= 0V or 600V
MT
Delay matching
t
- t
| on off |
nsec
t
t
Turn-on rise time
40
60
V
V
= 0V
= 0V
r
S
Turn-off fall time
20
35
f
S
DT
Deadtime: LO turn-off to HO turn-on(DT
280
4
400
5
520
6
RDT= 0
LO-HO) &
HO turn-off to LO turn-on (DT
µsec RDT = 200k (IR21834)
HO-LO)
HO-LO
MDT
Deadtime matching = DT
- DT
—
0
50
RDT=0
nsec
LO-HO
|
|
—
0
600
RDT = 200k (IR21834)
Static Electrical Characteristics
V
(V , V ) = 15V, V
CC BS
= COM, DT= V
and T = 25°C unless otherwise specified.The V , V and I
SS A IL IH IN
BIAS
SS
parameters are referenced to V /COM and are applicable to the respective input leads: HIN and LIN. The V , I and Ron
SS
O O
parameters are referenced to COM and are applicable to the respective output leads: HO and LO.
Symbol
Definition
Min. Typ. Max. Units Test Conditions
V
Logic “1” input voltage for HIN & logic “0” for LIN
2.7
—
—
—
—
—
60
1.0
5
—
0.8
1.2
0.1
50
V
= 10V to 20V
IH
CC
CC
V
Logic “0” input voltage for HIN & logic “1” for LIN
—
V
= 10V to 20V
IL
V
V
OH
High level output voltage, V
- V
O
—
I
I
= 0A
= 0A
BIAS
O
V
Low level output voltage, V
—
OL
LK
O
O
I
Offset supply leakage current
Quiescent V supply current
—
V = V = 600V
B S
µA
I
20
0.4
—
150
1.6
20
V
= 0V or 5V
= 0V or 5V
QBS
QCC
BS
IN
IN
I
Quiescent V
supply current
mA
V
CC
LIN
= 0V
I
Logic “1” input bias current
Logic “0” input bias current
HIN = 5V,
HIN = 0V, LIN = 5V
IN+
µA
V
I
—
1
2
IN-
V
V
CC
and V supply undervoltage positive going
8.0
8.9
9.8
CCUV+
BS
V
threshold
and V supply undervoltage negative going
BSUV+
V
V
CC
7.4
0.3
8.2
0.7
9.0
CCUV-
BS
V
threshold
BSUV-
V
Hysteresis
—
CCUVH
V
BSUVH
I
Output high short circuit pulsed current
Output low short circuit pulsed current
1.4
1.8
1.9
2.3
—
—
V = 0V,
O
O+
PW ≤ 10 µs
= 15V,
A
I
V
O
O-
PW ≤ 10 µs
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IR2183 4
Functional Block Diagrams
V B
U V
D E T E C T
2183
H O
R
R
Q
P U L S E
F I L T E R
H V
L E V E L
S H I F T E R
S
V S S / C O M
L E V E L
S H I F T
V S
HIN
P U L S E
G E N E R A T O R
DT
D E A D T I M E
S H O O T - T H R O U G H
P R E V E N T I O N
&
V C C
L O
U V
D E T E C T
+5V
V S S / C O M
L E V E L
S H I F T
D E L A Y
LIN
C O M
V S S
V B
U V
21834
D E T E C T
H O
R
R
Q
P U L S E
F I L T E R
H V
L E V E L
S H I F T E R
S
V S S / C O M
L E V E L
S H I F T
HIN
V S
P U L S E
G E N E R A T O R
D E A D T I M E
S H O O T - T H R O U G H
P R E V E N T I O N
&
V C C
L O
DT
U V
D E T E C T
+5V
V S S / C O M
L E V E L
S H I F T
D E L A Y
LIN
C O M
V S S
4
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IR2183 4
Lead Definitions
Symbol Description
HIN
Logic input for high side gate driver output (HO), in phase (referenced to COM for IR2183 and
VSS for IR21834)
Logic input for low side gate driver output (LO), out of phase (referenced to COM for IR2183
and VSS for IR21834)
LIN
DT
Programmable dead-time lead, referenced to VSS. (IR21834 only)
Logic Ground (21834 only)
VSS
V
High side floating supply
B
HO
High side gate driver output
V
V
High side floating supply return
S
Low side and logic fixed supply
CC
LO
Low side gate driver output
COM
Low side return
Lead Assignments
V
V
1
2
3
4
HIN
LIN
B
8
1
2
3
4
HIN
LIN
B
8
HO
HO
7
6
5
7
6
5
V
S
V
S
COM
LO
COM
LO
V
V
CC
CC
8-Lead PDIP
8-Lead SOIC
IR2183
IR2183S
14
13
12
11
10
9
14
13
12
11
10
9
1
HIN
LIN
VSS
DT
1
2
3
4
5
6
7
HIN
LIN
V
V
2
3
4
5
6
7
B
B
HO
HO
VSS
DT
V
S
V
S
COM
LO
COM
LO
8
8
V
V
CC
CC
14-Lead PDIP
14-Lead SOIC
IR21834
IR21834S
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IR2183 4
Case outlines
01-6014
01-3003 01 (MS-001AB)
8-Lead PDIP
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
FOOTPRINT
8X 0.72 [.028]
5
A
A1 .0040
b
c
.013
.0075
.189
.0098
.1968
.1574
8
1
7
2
6
3
5
4
6
D
E
e
H
E
.1497
0.25 [.010]
A
.050 BASIC
1.27 BASIC
6.46 [.255]
e 1 .025 BASIC
0.635 BASIC
H
K
L
y
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
3X 1.27 [.050]
e
6X
8X 1.78 [.070]
e1
K x 45°
A
C
y
0.10 [.004]
8X c
8X L
A1
B
8X b
7
0.25 [.010]
C A
NOT ES :
5
6
7
DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
3. DIMENS IONS ARE S HOWN IN MILLIME TE RS [INCHES ].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
01-6027
01-0021 11 (MS-012AA)
8-Lead SOIC
6
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IR2183 4
01-6010
01-3002 03 (MS-001AC)
14-Lead PDIP
01-6019
01-3063 00 (MS-012AB)
14-Lead SOIC (narrow body)
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IR2183 4
LIN
HIN
LIN
50%
50%
t
t
t
off
t
f
on
r
90%
90%
HO
LO
10%
10%
LO
Figure 1. Input/Output Timing Diagram
50%
50%
HIN
HO
t
t
t
f
t
on
off
90%
r
90%
10%
10%
50%
50%
HIN
LIN
Figure 2. Switching Time Waveform Definitions
90%
DT
10%
HO
LO
LO-HO
DT
HO-LO
10%
90%
MDT=
DT
- DT
LO-HO
HO-LO
Figure 3. Deadtime Waveform Definitions
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
Data and specifications subject to change without notice. 7/23/2001
8
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