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IR51H(D)224 [INFINEON]

HALF BRDG BASED MOSFET DRIVER, PSIP7, SIP-9/7;
IR51H(D)224
型号： IR51H(D)224
厂家： Infineon    Infineon
描述：

HALF BRDG BASED MOSFET DRIVER, PSIP7, SIP-9/7

驱动 信息通信管理 接口集成电路 驱动器
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Preliminary Data Sheet No. PD60083-  
K
IR51H(D)224  
IR51H(D)320  
IR51H(D)420  
(NOTE: For new designs, we  
recommend the IR53H(D)420-P)  
SELF-OSCILLATING HALF BRIDGE  
ProductSummary  
Features  
• Output Power MOSFETs in half-bridge configuration  
• High side gate drive designed for bootstrap operation  
• Bootstrap diode integrated into package (HD type)  
• Accurate timing control for both Power MOSFETs  
Matched delay to get 50% duty cycle  
Matched deadtime of 1.2us  
• Internal oscillator with programmable frequency  
V
(max) 250V (IR51H(D)224)  
400V (IR51H(D)320)  
IN  
500V (IR51H(D)420)  
Duty Cycle  
Deadtime  
50%  
1.2µs  
R
ds(on)  
1.1Ω (IR51H(D)224)  
1
f =  
Ω
3.0 (IR51H(D)320)  
1. 4 × (RT + 75Ω) × CT  
3.6Ω (IR51H(D)420)  
P (T = 25o )  
2.0W  
C
• 15.6V Zener clamped Vcc for offline operation  
• Half-bridge output is out of phase with RT  
D
A
• Micropower startup  
Package  
Description  
The IR51H(D)XXX are complete high voltage, high speed, self-  
oscillating half-bridge circuits. Proprietary HVIC and latch im-  
®
mune CMOS technologies, along with the HEXFET power  
MOSFET technology, enable ruggedized single package construc-  
tion.The front-end features a programmable oscillator which func-  
tions similar to the CMOS 555 timer. The supply to the control  
circuit has a zener clamp to simplify offline operation.The output  
features two HEXFETs in a half-bridge configuration with an in-  
ternally set deadtime designed for minimum cross-conduction in  
the half-bridge. Propagation delays for the high and low side  
9-Lead SIP  
without leads 5 and 8  
power MOSFETs are matched to simplify  
use in 50% duty cycle applications. The  
device can operate up to 500 volts.  
TypicalConnection  
DC Bus  
VIN  
D 1  
IR51H(D)XXX  
External  
Fast recovery diode D1 is  
not required for HD type  
1
6
9
7
Vcc  
R T  
VB  
VIN  
2
3
4
R T  
C T  
C T  
V O  
TO,  
C O M  
LOAD  
COM  
www.irf.com  
1
(NOTE: For new designs, we  
recommend the IR53H(D)420-P)  
IR51H(D)224  
IR51H(D)320  
IR51H(D)420  
AbsoluteMaximumRatings  
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All  
voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any  
lead. The thermal resistance and power dissipation ratings are measured under board mounted and  
still air conditions.  
Symbol  
Definition  
Minimum Maximum  
Units  
VIN  
High voltage supply  
-224  
-320  
-420  
- 0.3  
- 0.3  
250  
400  
- 0.3  
500  
Vo - 0.3  
Vo +2.5  
V
VB  
High side floating supply  
Half-bridge output  
RT voltage  
VO  
-0.3  
- 0.3  
- 0.3  
—
VIN + 0.3  
Vcc + 0.3  
Vcc + 0.3  
25  
VRT  
VCT  
Icc  
CT voltage  
Supply current (note 1)  
RT output current  
Peak diode recovery  
mA  
IRT  
- 5  
5
dV/dt  
PD  
—
3.5  
V/ns  
W
oC/W  
Package power dissipation @ T ≤ +25°C  
—
2.00  
60  
A
RthJA  
TJ  
Thermal resistance, junction to ambient  
Junction temperature  
—
-55  
-55  
—
150  
oC  
TS  
Storage temperature  
150  
TL  
Lead temperature (soldering, 10 seconds)  
300  
NOTE 1:  
This IC contains a zener clamp structure between V  
and COM which has a nominal breakdown voltage of 15.6V.  
CC  
Please note that this supply pin should not be driven by a DC, low impedance power source greater than the V  
specified in the Electrical Characteristics Section  
CLAMP  
2
www.irf.com  
(NOTE: For new designs, we  
recommend the IR53H(D)420-P)  
IR51H(D)224  
IR51H(D)320  
IR51H(D)420  
RecommendedOperatingConditions  
The input/output logic timing diagram is shown in figure 1. For proper operation, the device should be used  
within the recommended conditions.  
Symbol  
Definition  
Minimum  
Maximum  
Units  
VB  
VIN  
High side floating supply absolute voltage  
High voltage supply  
V
+ 10  
—
V + V  
o
o
clamp  
250  
-224  
-320  
-420  
V
—
—
400  
500  
VIN  
VO  
ID  
Half-bridge output voltage  
-3.0 (note 2)  
Continuous drain current (T = 25°C)  
A
—
—
-224  
-320  
1.1  
0.9  
-420  
-224  
-320  
-420  
—
—
0.7  
0.7  
0.6  
0.5  
5
A
(T = 85°C)  
A
—
—
(note 3)  
-40  
ICC  
TA  
Supply current  
mA  
°C  
Ambient temperature  
125  
NOTE 2:  
Care should be taken to avoid switching conditions where the V node flies inductively below ground by more than 5V.  
S
NOTE 3:  
Enough current should be supplied to the V  
lead of the IC to keep the internal 15.6V zener diode clamping the  
CC  
voltage at this lead.  
DynamicElectricalCharacteristics  
VBIAS (VCC, VBS) = 12V, T = 25oC unless otherwise specified.  
A
Symbol Definition  
Min. Typ.  
Max. Units TestConditions  
t
Reverse recovery time (MOSFET body diode)  
—
I =1.1A  
F
rr  
-224  
-320  
-420  
200  
270  
240  
—
—
—
—
—
—
—
—
ns  
I
F=900mA  
di/dt  
=100  
A/µs  
I
F=700mA  
Q
Reverserecoverycharge (MOSFETbodydiode)  
RT duty cycle  
I =1.1A  
F
rr  
-224  
-320  
-420  
0.7  
0.6  
0.5  
50  
µC  
—
—
—
I =900mA  
F
I =700mA  
F
fosc = 20 kHz  
—
—
D
%
www.irf.com  
3
(NOTE: For new designs, we  
recommend the IR53H(D)420-P)  
IR51H(D)224  
IR51H(D)320  
IR51H(D)420  
Static Electrical Characteristics  
VBIAS (VCC, VB) = 12V, T = 25oC unless otherwise specified.  
A
Symbol Definition  
Min. Typ. Max. Units TestConditions  
VCCUV+ VCC supply undervoltage positive going  
threshold  
—
—
—
8.4  
8.0  
300  
—
V
V
VCC supplyundervoltagenegativegoing  
threshold  
—
V
CCUV-  
I
Quiescent VCC supply current  
—
—
—
50  
—
µA VCC > VCCUV  
QCC  
V
I
VCC zener shunt clamp voltage  
Quiescent VBS supply current  
—
—
15.6  
30  
V
ICC = 5mA  
CLAMP  
QBS  
µA  
l
Offset supply leakage current  
Oscillatorfrequency  
—
—
—
20  
VB = VIN = 500V  
RT = 35.7 kΩ  
CT = 1 nF  
OS  
f
OSC  
kHz  
—
100  
—
RT = 7.04 kΩ  
CT = 1 nF  
I
CT input current  
—
—
0.001  
100  
1.0  
—
µA  
CT  
V
CT undervoltage lockout  
RT high level output voltage, VCC - RT  
Note 2  
CTUV  
VRT+  
—
—
20  
200  
—
—
IRT = 100µA  
IRT = -1mA  
mV  
VRT-  
RT low level output voltage  
—
—
20  
200  
—
—
IRT = 100µA  
IRT = -1mA  
VRTUV  
VCT+  
RT undervoltage lockout, VCC - RT  
2/3 VCC threshold  
—
—
100  
8.0  
—
—
IRT = 100µA  
kHz  
Ω
VCT-  
1/3 VCC threshold  
—
4.0  
—
Rds(on) Static-drain-to-source on-resistance  
—
I =1.1A  
F
-224  
-320  
-420  
1.1  
1.8  
3.0  
—
I
—
—
—
F=900mA  
di/dt  
—
—
—
—
—
I
F=700mA  
=100  
I =1.1A  
F
V
Diodeforwardvoltage  
SD  
-224  
-320  
-420  
0.85  
0.7  
V
I =900mA  
F
A/µs  
—
—
I =700mA  
F
0.8  
4
www.irf.com  
(NOTE: For new designs, we  
recommend the IR53H(D)420-P)  
IR51H(D)224  
IR51H(D)320  
IR51H(D)420  
FunctionalBlockDiagram  
V
VIN  
B
6
D1  
9
1
Vcc  
IRFCXXX  
H
V
O
S
IR2151  
2
7
R
V O  
T
L
O
IRFCXXX  
3
C
T
4
C O M  
Fast recovery diode D1 is  
incorporated in IR51HDXXX only  
LeadDefinitions  
Symbol  
LeadDescription  
VCC  
Logic and internal gate drive supply voltage. An internal zener clamp diode at 15.6 V norminal is included  
to allow the VCC to be current fed directly from VIN typically by means of a high value resistor.  
RT  
CT  
Oscillator timing resistor output; a resistor is connected from RT to CT. RT is out of phase with the half-  
bridge output (VO).  
Oscillator timing capacitor input; a capacitor is connected from CT to COM in order to program the  
oscillator frequency according to the following equation:  
1
f =  
1. 4 × (RT + 75Ω) × CT  
CT PIN also invokes shutdown function (see note 2) where 75Ω is the effective impedence of the RT  
output stage.  
VB  
High side gate drive floating supply. For bootstrap operation a high voltage fast recovery diode is needed  
to feed from VCC to VB. (HD type circuits incorporate this diode).  
VIN  
High voltage supply  
VO  
Half Bridge output  
COM  
Logic and low side of half bridge return  
www.irf.com  
5
(NOTE: For new designs, we  
recommend the IR53H(D)420-P)  
IR51H(D)224  
IR51H(D)320  
IR51H(D)420  
Lead Assignments  
1
2
3
4
V
R
C
COM  
6
7
9
V
B
cc  
T
T
VO  
V
IN  
9
9-Lead SIP without Leads 5 and 8  
2
1
Vccuv+  
V CLAMP  
Vcc  
RT  
CT  
V+  
0
VO  
Figure 1. Input/Output Timing Diagram  
6
www.irf.com  
(NOTE: For new designs, we  
recommend the IR53H(D)420-P)  
IR51H(D)224  
IR51H(D)320  
IR51H(D)420  
Case outline  
NOTES:  
1. Dimensioning and tolerancing per ANSI Y14.5M-1982  
2. Controlling Dimension: INCH  
3. Dimensions are shown in millimeters (inches)  
9-Lead SIP w/o leads 5 and 8  
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105  
http://www.irf.com/  
Data and specifications subject to change without notice. 5/14/2001  
www.irf.com  
7

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