IRF1104PBF [INFINEON]
HEXFET POWER MOSFET ( VDSS = 40V , RDS(on) = 0.009ヘ , ID = 100A ); HEXFET功率MOSFET（ VDSS = 40V ， RDS （ ON） = 0.009ヘ， ID = 100A ）
| 型号： | IRF1104PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET POWER MOSFET ( VDSS = 40V , RDS(on) = 0.009ヘ , ID = 100A ) |
| 文件： | 总9页 (文件大小：187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94967
IRF1104PbF
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 40V
R
DS(on) = 0.009Ω
G
l Fully Avalanche Rated
l Lead-Free
ID = 100Aꢀ
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
100 ꢀ
71
400
170
1.11
± 20
350
60
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
PD @TC = 25°C
PowerDissipation
W
W/°C
V
LinearDeratingFactor
VGS
EAS
IAR
Gate-to-SourceVoltage
Single Pulse Avalanche Energy
AvalancheCurrent
mJ
A
EAR
dv/dt
TJ
RepetitiveAvalancheEnergy
Peak Diode Recovery dv/dt
OperatingJunctionand
17
mJ
V/ns
5.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
Units
RθJC
RθCS
RθJA
0.90
–––
62
°C/W
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1
02/02/04
IRF1104PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
40 ––– –––
––– 0.038 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
V
∆V(BR)DSS/∆TJ BreakdownVoltageTemp.Coefficient
RDS(on)
VGS(th)
gfs
StaticDrain-to-SourceOn-Resistance
Gate Threshold Voltage
––– ––– 0.009
Ω
V
S
VGS = 10V, ID = 60A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 60A
VDS = 40V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 150°C
VGS = 20V
2.0
37
––– 4.0
––– –––
ForwardTransconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 93
––– ––– 29
––– ––– 30
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = 60A
Qgs
Qgd
td(on)
tr
Gate-to-SourceCharge
Gate-to-Drain("Miller")Charge
Turn-On Delay Time
Rise Time
nC VDS = 32V
VGS = 10V, See Fig. 6 and 13
–––
15 –––
VDD = 20V
––– 114 –––
ID = 60A
ns
td(off)
tf
Turn-Off Delay Time
FallTime
–––
–––
28 –––
19 –––
RG = 3.6Ω
RD = 0.33Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
D
S
4ꢀ5
LD
Internal Drain Inductance
–––
–––
–––
–––
nH
G
LS
Internal Source Inductance
7ꢀ5
and center of die contact
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 2900 –––
––– 1100 –––
––– 250 –––
Output Capacitance
pF
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
––– –––
100ꢀ
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 400
S
p-n junction diode.
VSD
trr
DiodeForwardVoltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 74 110
––– 188 280
V
TJ = 25°C, IS = 60A, VGS = 0V
TJ = 25°C, IF = 60A
ns
nC
Qrr
ton
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 194µH
RG = 25Ω, IAS = 60A. (See Figure 12)
ꢀ Caculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
ISD ≤ 60A, di/dt ≤ 304A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
2
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IRF1104PbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 25 C
J
°
T = 175 C
J
1
0.1
1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
100A
=
I
D
2.0
1.5
1.0
0.5
0.0
°
T = 175 C
J
100
10
1
°
T = 25 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
=10V
GS
0.1
4.0
5.0
6.0
7.0
8.0 9.0
10.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF1104PbF
5000
20
15
10
5
V
= 0V,
f = 1MHz
C SHORTED
ds
I = 60A
D
GS
V
V
= 32V
= 20V
C
= C + C
DS
DS
iss
gs
gd ,
C
= C
rss
gd
C
= C + C
4000
3000
2000
1000
0
oss
ds
gd
C
iss
C
oss
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
1
10
100
0
25
50
75
100
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 175 C
J
10us
100us
1ms
°
T = 25 C
J
1
10ms
°
T = 25 C
C
°
T = 175 C
Single Pulse
J
V
= 0 V
GS
1
0.1
0.2
1
10
100
0.8
1.4
2.0
2.6
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF1104PbF
RD
100
80
60
40
20
0
VDS
LIMITED BY PACKAGE
VGS
10V
DꢀUꢀTꢀ
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.05
0.1
P
2
DM
t
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
1
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF1104PbF
800
600
400
200
0
I
D
TOP
24A
42A
15V
BOTTOM 60A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
175
°
V
Starting T , Junction Temperature ( C)
J
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRF1104PbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
DꢀUꢀT
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as DꢀUꢀTꢀ
• ISD controlled by Duty Factor "D"
• DꢀUꢀTꢀ - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRF1104PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
3.78 (.149)
- B -
10.29 (.405)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
3.54 (.139)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
2- DRAIN
3- SOURCE
1
2
3
1- GATE
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMPLE: THIS IS AN IRF1010
LOT CODE 1789
PART NUMBER
AS S EMBLED ON WW 19, 1997
IN T HE AS S E MBLY LINE "C"
INTERNATIONAL
RE CTIFIER
LOGO
Note: "P" in assembly line
position indicates "Lead-Free"
DATE CODE
YEAR 7 = 1997
WEEK 19
AS SE MBLY
LOT CODE
LINE C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.02/04
8
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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